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Nanoscale Mos Transistors
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Book Synopsis Nanoscale MOS Transistors by : David Esseni
Download or read book Nanoscale MOS Transistors written by David Esseni and published by Cambridge University Press. This book was released on 2011-01-20 with total page 489 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results
Book Synopsis Carrier Transport in Nanoscale MOS Transistors by : Hideaki Tsuchiya
Download or read book Carrier Transport in Nanoscale MOS Transistors written by Hideaki Tsuchiya and published by John Wiley & Sons. This book was released on 2017-06-13 with total page 265 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive advanced level examination of the transport theory of nanoscale devices Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds
Book Synopsis Nanoscale Transistors by : Mark Lundstrom
Download or read book Nanoscale Transistors written by Mark Lundstrom and published by Springer Science & Business Media. This book was released on 2006-06-18 with total page 223 pages. Available in PDF, EPUB and Kindle. Book excerpt: To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules
Book Synopsis Fundamentals of Bias Temperature Instability in MOS Transistors by : Souvik Mahapatra
Download or read book Fundamentals of Bias Temperature Instability in MOS Transistors written by Souvik Mahapatra and published by Springer. This book was released on 2015-08-05 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike.
Book Synopsis Advanced Nanoscale MOSFET Architectures by : Kalyan Biswas
Download or read book Advanced Nanoscale MOSFET Architectures written by Kalyan Biswas and published by John Wiley & Sons. This book was released on 2024-07-03 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt: Comprehensive reference on the fundamental principles and basic physics dictating metal–oxide–semiconductor field-effect transistor (MOSFET) operation Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal–oxide–semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology. The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs. Additional topics covered include: High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon–germanium (SiGe) FinFET and its challenges and future perspectives TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study.
Book Synopsis Introduction to Nano by : Amretashis Sengupta
Download or read book Introduction to Nano written by Amretashis Sengupta and published by Springer. This book was released on 2015-07-01 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the basics of nanotechnology and provides a solid understanding of the subject. Starting from a brush-up of the basic quantum mechanics and materials science, the book helps to gradually build up understanding of the various effects of quantum confinement, optical-electronic properties of nanoparticles and major nanomaterials. The book covers the various physical, chemical and hybrid methods of nanomaterial synthesis and nanofabrication as well as advanced characterization techniques. It includes chapters on the various applications of nanoscience and nanotechnology. It is written in a simple form, making it useful for students of physical and material sciences.
Book Synopsis Planar Double-Gate Transistor by : Amara Amara
Download or read book Planar Double-Gate Transistor written by Amara Amara and published by Springer Science & Business Media. This book was released on 2009-01-16 with total page 215 pages. Available in PDF, EPUB and Kindle. Book excerpt: Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called “scaling”, has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore’s Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore’s law and each dif?culty has found a solution.
Book Synopsis Nanoscale Devices by : Brajesh Kumar Kaushik
Download or read book Nanoscale Devices written by Brajesh Kumar Kaushik and published by CRC Press. This book was released on 2018-11-16 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary aim of this book is to discuss various aspects of nanoscale device design and their applications including transport mechanism, modeling, and circuit applications. . Provides a platform for modeling and analysis of state-of-the-art devices in nanoscale regime, reviews issues related to optimizing the sub-nanometer device performance and addresses simulation aspect and/or fabrication process of devices Also, includes design problems at the end of each chapter
Download or read book Nanoscale VLSI written by Rohit Dhiman and published by Springer Nature. This book was released on 2020-10-03 with total page 319 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes methodologies in the design of VLSI devices, circuits and their applications at nanoscale levels. The book begins with the discussion on the dominant role of power dissipation in highly scaled devices.The 15 Chapters of the book are classified under four sections that cover design, modeling, and simulation of electronic, magnetic and compound semiconductors for their applications in VLSI devices, circuits, and systems. This comprehensive volume eloquently presents the design methodologies for ultra–low power VLSI design, potential post–CMOS devices, and their applications from the architectural and system perspectives. The book shall serve as an invaluable reference book for the graduate students, Ph.D./ M.S./ M.Tech. Scholars, researchers, and practicing engineers working in the frontier areas of nanoscale VLSI design.
Book Synopsis Nanowire Transistors by : Jean-Pierre Colinge
Download or read book Nanowire Transistors written by Jean-Pierre Colinge and published by Cambridge University Press. This book was released on 2016-04-21 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: A self-contained and up-to-date account of the current developments in the physics and technology of nanowire semiconductor devices.
Book Synopsis Nanoscale CMOS by : Francis Balestra
Download or read book Nanoscale CMOS written by Francis Balestra and published by John Wiley & Sons. This book was released on 2013-03-01 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive review of the state-of-the-art in the development of new and innovative materials, and of advanced modeling and characterization methods for nanoscale CMOS devices. Leading global industry bodies including the International Technology Roadmap for Semiconductors (ITRS) have created a forecast of performance improvements that will be delivered in the foreseeable future – in the form of a roadmap that will lead to a substantial enlargement in the number of materials, technologies and device architectures used in CMOS devices. This book addresses the field of materials development, which has been the subject of a major research drive aimed at finding new ways to enhance the performance of semiconductor technologies. It covers three areas that will each have a dramatic impact on the development of future CMOS devices: global and local strained and alternative materials for high speed channels on bulk substrate and insulator; very low access resistance; and various high dielectric constant gate stacks for power scaling. The book also provides information on the most appropriate modeling and simulation methods for electrical properties of advanced MOSFETs, including ballistic transport, gate leakage, atomistic simulation, and compact models for single and multi-gate devices, nanowire and carbon-based FETs. Finally, the book presents an in-depth investigation of the main nanocharacterization techniques that can be used for an accurate determination of transport parameters, interface defects, channel strain as well as RF properties, including capacitance-conductance, improved split C-V, magnetoresistance, charge pumping, low frequency noise, and Raman spectroscopy.
Download or read book The MOS System written by Olof Engström and published by Cambridge University Press. This book was released on 2014-09-25 with total page 369 pages. Available in PDF, EPUB and Kindle. Book excerpt: A detailed, up-to-date guide to modern MOS structures, describing key tools, cutting-edge models, novel phenomena and challenges for future development. Abstract concepts are supported by practical examples and presented alongside recent theoretical and experimental results. An ideal companion for researchers, graduate students and industrial development engineers.
Book Synopsis Fundamentals of Nanotransistors by : Mark Lundstrom
Download or read book Fundamentals of Nanotransistors written by Mark Lundstrom and published by World Scientific Publishing Company Incorporated. This book was released on 2018 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, "bottom-up approach" that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits.
Book Synopsis Photo-Excited Charge Collection Spectroscopy by : Seongil Im
Download or read book Photo-Excited Charge Collection Spectroscopy written by Seongil Im and published by Springer Science & Business Media. This book was released on 2014-07-08 with total page 107 pages. Available in PDF, EPUB and Kindle. Book excerpt: Solid state field-effect devices such as organic and inorganic-channel thin-film transistors (TFTs) have been expected to promote advances in display and sensor electronics. The operational stabilities of such TFTs are thus important, strongly depending on the nature and density of charge traps present at the channel/dielectric interface or in the thin-film channel itself. This book contains how to characterize these traps, starting from the device physics of field-effect transistor (FET). Unlike conventional analysis techniques which are away from well-resolving spectral results, newly-introduced photo-excited charge-collection spectroscopy (PECCS) utilizes the photo-induced threshold voltage response from any type of working transistor devices with organic-, inorganic-, and even nano-channels, directly probing on the traps. So, our technique PECCS has been discussed through more than ten refereed-journal papers in the fields of device electronics, applied physics, applied chemistry, nano-devices and materials science, finally finding a need to be summarized with several chapters in a short book. Device physics and instrumentations of PECCS are well addressed respectively, in the first and second chapters, for the next chapters addressing real applications to organic, oxide, and nanostructured FETs. This book would provide benefits since its contents are not only educational and basic principle-supportive but also applicable and in-house operational.
Book Synopsis Nanoscale Mos Transistors by : David Esseni
Download or read book Nanoscale Mos Transistors written by David Esseni and published by . This book was released on 2014-05-14 with total page 490 pages. Available in PDF, EPUB and Kindle. Book excerpt: Provides the theoretical background and the physical insight needed to understand new and future developments in nanoscale CMOS technologies.
Download or read book Nanotechnology written by Sunipa Roy and published by CRC Press. This book was released on 2017-09-18 with total page 351 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nano particles have created a high interest in recent years by virtue of their unusual mechanical, electrical, optical and magnetic properties and find wide applications in all fields of engineering. This edited volume aims to present the latest trends and updates in nanogenerators, thin film solar cells and green synthesis of metallic nanoparticles with a focus on nanostructured semiconductor devices. Exclusive chapter on electrical transport of nanostructure explains device physics for material properties for reduced dimensions. Additionally, the text describes the functionality of metallic nanoparticles and their application in molecular imaging and optical metamaterials. Piezoelectric nanogenerators has been touched upon from the energy perspective as well. Key Features: • Organized contents on Nanogenerators, VOC sensing, nanoelectronics, and NEMS. • Discusses eco-friendly green synthesis methods for metallic nanoparticles. • Touches upon low power nano devices (e.g. nanogenerators) for energy harvesting with quantum mechanical study. • Thin film/heterojunction based high efficiency solar cell addressed aimed at reducing global energy consumption.
Book Synopsis Solid State Circuits Technologies by : Jacobus Swart
Download or read book Solid State Circuits Technologies written by Jacobus Swart and published by BoD – Books on Demand. This book was released on 2010-01-01 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt: The evolution of solid-state circuit technology has a long history within a relatively short period of time. This technology has lead to the modern information society that connects us and tools, a large market, and many types of products and applications. The solid-state circuit technology continuously evolves via breakthroughs and improvements every year. This book is devoted to review and present novel approaches for some of the main issues involved in this exciting and vigorous technology. The book is composed of 22 chapters, written by authors coming from 30 different institutions located in 12 different countries throughout the Americas, Asia and Europe. Thus, reflecting the wide international contribution to the book. The broad range of subjects presented in the book offers a general overview of the main issues in modern solid-state circuit technology. Furthermore, the book offers an in depth analysis on specific subjects for specialists. We believe the book is of great scientific and educational value for many readers. I am profoundly indebted to the support provided by all of those involved in the work. First and foremost I would like to acknowledge and thank the authors who worked hard and generously agreed to share their results and knowledge. Second I would like to express my gratitude to the Intech team that invited me to edit the book and give me their full support and a fruitful experience while working together to combine this book.
