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Mos Metal Oxide Semiconductor Physics And Technology
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Book Synopsis MOS (Metal Oxide Semiconductor) Physics and Technology by : E. H. Nicollian
Download or read book MOS (Metal Oxide Semiconductor) Physics and Technology written by E. H. Nicollian and published by John Wiley & Sons. This book was released on 2002-11-21 with total page 928 pages. Available in PDF, EPUB and Kindle. Book excerpt: Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.
Book Synopsis MOS (Metal Oxide Semiconductor) Physics and Technology by : E. H. Nicolliam
Download or read book MOS (Metal Oxide Semiconductor) Physics and Technology written by E. H. Nicolliam and published by . This book was released on 1982 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis MOS (Metal Oxide Semiconductor) Physics and Technology by : E. H. Nicolliam
Download or read book MOS (Metal Oxide Semiconductor) Physics and Technology written by E. H. Nicolliam and published by . This book was released on 1982 with total page 844 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis MOS Interface Physics, Process and Characterization by : Shengkai Wang
Download or read book MOS Interface Physics, Process and Characterization written by Shengkai Wang and published by CRC Press. This book was released on 2021-10-05 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt: The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit, and is therefore a fundamental building block of the information society. Indeed, high quality MOS structure is the key to achieving high performance devices and integrated circuits. Meanwhile, the control of interface physics, process and characterization methods determine the quality of MOS structure. This book tries to answer five key questions: Why are high-performance integrated circuits bonded together so closely with MOS structure? Which physical phenomena occur in MOS structure? How do these phenomena affect the performance of MOS structure? How can we observe and quantify these phenomena scientifically? How to control the above phenomena through process? Principles are explained based on common experimental phenomena, from sensibility to rationality, via abundant experimental examples focusing on MOS structure, including specific experimental steps with a strong level of operability. This book will be an essential reference for engineers in semiconductor related fields and academics and postgraduates within the field of microelectronics.
Book Synopsis Fundamentals of III-V Semiconductor MOSFETs by : Serge Oktyabrsky
Download or read book Fundamentals of III-V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Book Synopsis Semiconductor Material and Device Characterization by : Dieter K. Schroder
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2006-02-10 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Book Synopsis Physics of Semiconductor Devices by : Simon M. Sze
Download or read book Physics of Semiconductor Devices written by Simon M. Sze and published by John Wiley & Sons. This book was released on 2021-03-03 with total page 944 pages. Available in PDF, EPUB and Kindle. Book excerpt: The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters. Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices: Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices Offers completely updated and revised information that reflects advances in device concepts, performance, and application Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual for Instructor's only Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.
Book Synopsis Semiconductor Physics and Devices by : Donald A. Neamen
Download or read book Semiconductor Physics and Devices written by Donald A. Neamen and published by . This book was released on 2003 with total page 746 pages. Available in PDF, EPUB and Kindle. Book excerpt: This text aims to provide the fundamentals necessary to understand semiconductor device characteristics, operations and limitations. Quantum mechanics and quantum theory are explored, and this background helps give students a deeper understanding of the essentials of physics and semiconductors.
Book Synopsis Materials Science Reading Sampler by : Wiley
Download or read book Materials Science Reading Sampler written by Wiley and published by John Wiley & Sons. This book was released on 2013-02-15 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 2013 Materials Science eBook Sampler includes select material from seven Materials Science titles. Titles are from a number of Wiley imprints including Wiley, Wiley-VCH, Wiley-American Ceramic Society, Wiley-Scrivener and Wiley-The Minerals, Metals and Materials Society. The material that is included for each selection is the book’s full Table of Contents as well as a sample chapter. If you would like to read more from these books, you can purchase the full book or e-book at your favorite online retailer.
Book Synopsis Gate Dielectric Integrity by : Dinesh C. Gupta
Download or read book Gate Dielectric Integrity written by Dinesh C. Gupta and published by ASTM International. This book was released on 2000 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: Annotation Contains papers from a January 1999 conference held in San Jose, California, describing concepts and metrology of Gate Dielectric Integrity (GDI) and discussing its applications for material and device processes and tool qualification. Topics include methods, protocols, and reliability assessment as related to dielectric integrity. Papers are organized in sections on concepts, thin gate dielectrics, characterization and applications, and standardization. There is also a section summarizing panel discussions. Gupta is affiliated with Mitsubishi Silicon America. Brown is affiliated with Texas Instruments Inc. Annotation copyrighted by Book News, Inc., Portland, OR.
Book Synopsis Electrical Processes in Organic Thin Film Devices by : Michael C. Petty
Download or read book Electrical Processes in Organic Thin Film Devices written by Michael C. Petty and published by John Wiley & Sons. This book was released on 2022-01-24 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electrical Processes in Organic Thin Film Devices A one-stop examination of fundamental electrical behaviour in organic electronic device architectures In Electrical Processes in Organic Thin Film Devices: From Bulk Materials to Nanoscale Architectures, distinguished researcher Michael C. Petty delivers an in-depth treatment of the electrical behaviour of organic electronic devices focused on first principles. The author describes the fundamental electrical behaviour of various device architectures and offers an introduction to the physical processes that play a role in the electrical conductivity of organic materials. Beginning with band theory, the text moves on to address the effects of thin film device architectures and nanostructures. The book discusses the applications to devices currently in the marketplace, like displays, as well as those under development (transistors, solar cells, and memories). Electrical Processes in Organic Thin Film Devices also describes emerging organic thin film architectures and explores the potential for single molecule electronics and biologically inspired devices. Finally, the book also includes: A detailed introduction to electronic and vibrational states in organic solids, including classical band theory, disordered semiconductors, and lattice vibrations Comprehensive explorations of electrical conductivity, including electronic and ionic processes, carrier drift, diffusion, the Boltzmann Transport Equation, excess carriers, recombination, doping, and superconductivity An overview of important electro-active organic materials, like molecular crystals, charge-transfer complexes, conductive polymers, carbon nanotubes, and graphene Practical considerations of defects and nanoscale phenomena, including transport processes in low-dimensional systems, surfaces and interface states In-depth examinations of metal contacts, including ohmic contacts, the Schottky Barrier, and metal/molecule contacts A systematic guide to the operating principles of metal/insulator/semiconductor structures and the field effect A set of problems (with solutions on-line) for each chapter of the book Perfect for electronics developers and researchers in both industry and academia who study and work with molecular and nanoscale electronics, Electrical Processes in Organic Thin Film Devices also deserves a place in the libraries of undergraduate and postgraduate students in courses on molecular electronics, organic electronics, and plastic electronics.
Book Synopsis High Dielectric Constant Materials by : Howard Huff
Download or read book High Dielectric Constant Materials written by Howard Huff and published by Springer Science & Business Media. This book was released on 2005 with total page 740 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.
Book Synopsis Metrology and Diagnostic Techniques for Nanoelectronics by : Zhiyong Ma
Download or read book Metrology and Diagnostic Techniques for Nanoelectronics written by Zhiyong Ma and published by CRC Press. This book was released on 2017-03-27 with total page 889 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoelectronics is changing the way the world communicates, and is transforming our daily lives. Continuing Moore’s law and miniaturization of low-power semiconductor chips with ever-increasing functionality have been relentlessly driving R&D of new devices, materials, and process capabilities to meet performance, power, and cost requirements. This book covers up-to-date advances in research and industry practices in nanometrology, critical for continuing technology scaling and product innovation. It holistically approaches the subject matter and addresses emerging and important topics in semiconductor R&D and manufacturing. It is a complete guide for metrology and diagnostic techniques essential for process technology, electronics packaging, and product development and debugging—a unique approach compared to other books. The authors are from academia, government labs, and industry and have vast experience and expertise in the topics presented. The book is intended for all those involved in IC manufacturing and nanoelectronics and for those studying nanoelectronics process and assembly technologies or working in device testing, characterization, and diagnostic techniques.
Book Synopsis The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--4, 2000 by : Hisham Z. Massoud
Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--4, 2000 written by Hisham Z. Massoud and published by . This book was released on 2000 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Advanced Characterization Techniques for Thin Film Solar Cells by : Daniel Abou-Ras
Download or read book Advanced Characterization Techniques for Thin Film Solar Cells written by Daniel Abou-Ras and published by John Wiley & Sons. This book was released on 2016-07-13 with total page 760 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book focuses on advanced characterization methods for thin-film solar cells that have proven their relevance both for academic and corporate photovoltaic research and development. After an introduction to thin-film photovoltaics, highly experienced experts report on device and materials characterization methods such as electroluminescence analysis, capacitance spectroscopy, and various microscopy methods. In the final part of the book simulation techniques are presented which are used for ab-initio calculations of relevant semiconductors and for device simulations in 1D, 2D and 3D. Building on a proven concept, this new edition also covers thermography, transient optoelectronic methods, and absorption and photocurrent spectroscopy.
Book Synopsis Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes by : Bernd O. Kolbesen
Download or read book Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes written by Bernd O. Kolbesen and published by The Electrochemical Society. This book was released on 2003 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt: .".. ALTECH 2003 was Symposium J1 held at the 203rd Meeting of the Electrochemical Society in Paris, France from April 27 to May 2, 2003 ... Symposium M1, Diagnostic Techniques for Semiconductor Materials and Devices, was part of the 202nd Meeting of the Electrochemical Society held in Salt Lake City, Utah, from October 21 to 25, 2002 ..."--p. iii.
Book Synopsis Physics of Semiconductor Devices by : V. K. Jain
Download or read book Physics of Semiconductor Devices written by V. K. Jain and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 841 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this workshop is to spread the vast amount of information available on semiconductor physics to every possible field throughout the scientific community. As a result, the latest findings, research and discoveries can be quickly disseminated. This workshop provides all participating research groups with an excellent platform for interaction and collaboration with other members of their respective scientific community. This workshop’s technical sessions include various current and significant topics for applications and scientific developments, including • Optoelectronics • VLSI & ULSI Technology • Photovoltaics • MEMS & Sensors • Device Modeling and Simulation • High Frequency/ Power Devices • Nanotechnology and Emerging Areas • Organic Electronics • Displays and Lighting Many eminent scientists from various national and international organizations are actively participating with their latest research works and also equally supporting this mega event by joining the various organizing committees.
