Mos Interface Physics Process And Characterization

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MOS Interface Physics, Process and Characterization

Author : Shengkai Wang
Publisher : CRC Press
ISBN 13 : 1000455769
Total Pages : 192 pages
Book Rating : 4.0/5 (4 download)

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Book Synopsis MOS Interface Physics, Process and Characterization by : Shengkai Wang

Download or read book MOS Interface Physics, Process and Characterization written by Shengkai Wang and published by CRC Press. This book was released on 2021-10-05 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt: The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit, and is therefore a fundamental building block of the information society. Indeed, high quality MOS structure is the key to achieving high performance devices and integrated circuits. Meanwhile, the control of interface physics, process and characterization methods determine the quality of MOS structure. This book tries to answer five key questions: Why are high-performance integrated circuits bonded together so closely with MOS structure? Which physical phenomena occur in MOS structure? How do these phenomena affect the performance of MOS structure? How can we observe and quantify these phenomena scientifically? How to control the above phenomena through process? Principles are explained based on common experimental phenomena, from sensibility to rationality, via abundant experimental examples focusing on MOS structure, including specific experimental steps with a strong level of operability. This book will be an essential reference for engineers in semiconductor related fields and academics and postgraduates within the field of microelectronics.

MOS Interface Physics, Process and Characterization

Author : Shengkai Wang
Publisher : CRC Press
ISBN 13 : 1000455742
Total Pages : 200 pages
Book Rating : 4.0/5 (4 download)

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Book Synopsis MOS Interface Physics, Process and Characterization by : Shengkai Wang

Download or read book MOS Interface Physics, Process and Characterization written by Shengkai Wang and published by CRC Press. This book was released on 2021-10-05 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt: The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit, and is therefore a fundamental building block of the information society. Indeed, high quality MOS structure is the key to achieving high performance devices and integrated circuits. Meanwhile, the control of interface physics, process and characterization methods determine the quality of MOS structure. This book tries to answer five key questions: Why are high-performance integrated circuits bonded together so closely with MOS structure? Which physical phenomena occur in MOS structure? How do these phenomena affect the performance of MOS structure? How can we observe and quantify these phenomena scientifically? How to control the above phenomena through process? Principles are explained based on common experimental phenomena, from sensibility to rationality, via abundant experimental examples focusing on MOS structure, including specific experimental steps with a strong level of operability. This book will be an essential reference for engineers in semiconductor related fields and academics and postgraduates within the field of microelectronics.

MOS (Metal Oxide Semiconductor) Physics and Technology

Author : E. H. Nicollian
Publisher : John Wiley & Sons
ISBN 13 : 047143079X
Total Pages : 928 pages
Book Rating : 4.4/5 (714 download)

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Book Synopsis MOS (Metal Oxide Semiconductor) Physics and Technology by : E. H. Nicollian

Download or read book MOS (Metal Oxide Semiconductor) Physics and Technology written by E. H. Nicollian and published by John Wiley & Sons. This book was released on 2002-11-21 with total page 928 pages. Available in PDF, EPUB and Kindle. Book excerpt: Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.

Materials and Process Characterization

Author : Norman G. Einspruch
Publisher : Academic Press
ISBN 13 : 1483217736
Total Pages : 614 pages
Book Rating : 4.4/5 (832 download)

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Book Synopsis Materials and Process Characterization by : Norman G. Einspruch

Download or read book Materials and Process Characterization written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 614 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics: Microstructure Science, Volume 6: Materials and Process Characterization addresses the problem of how to apply a broad range of sophisticated materials characterization tools to materials and processes used for development and production of very large scale integration (VLSI) electronics. This book discusses the various characterization techniques, such as Auger spectroscopy, secondary ion mass spectroscopy, X-ray topography, transmission electron microscopy, and spreading resistance. The systematic approach to the technologies of VLSI electronic materials and device manufacture are also considered. This volume is beneficial to materials scientists, chemists, and engineers who are commissioned with the responsibility of developing and implementing the production of materials and devices to support the VLSI era.

Physics and Chemistry of III-V Compound Semiconductor Interfaces

Author : Carl Wilmsen
Publisher : Springer Science & Business Media
ISBN 13 : 1468448358
Total Pages : 472 pages
Book Rating : 4.4/5 (684 download)

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Book Synopsis Physics and Chemistry of III-V Compound Semiconductor Interfaces by : Carl Wilmsen

Download or read book Physics and Chemistry of III-V Compound Semiconductor Interfaces written by Carl Wilmsen and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.

Characterization Methods for Submicron MOSFETs

Author : Hisham Haddara
Publisher : Springer
ISBN 13 :
Total Pages : 256 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Characterization Methods for Submicron MOSFETs by : Hisham Haddara

Download or read book Characterization Methods for Submicron MOSFETs written by Hisham Haddara and published by Springer. This book was released on 1995 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) is a key component in modern microelectronics. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements making the task of MOSFET characterization increasingly crucial, as well as more difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples. It was thus unavoidable to develop new models and new characterization methods, or at least adapt the existing ones to cope with the special nature of these new phenomena. Characterization Methods for Submicron MOSFETs deals with techniques which show high potential for characterization of submicron devices. Throughout the book the focus is on the adaptation of such methods to resolve measurement problems relevant to VLSI devices and new materials, especially Silicon-on-Insulator (SOI). Characterization Methods for Submicron MOSFETs was written to provide help to device engineers and researchers to enable them to cope with the challenges they face. Without adequate device characterization, new physical phenomena and new types of defects or damage may not be well identified or dealt with, leading to an undoubted obstruction of the device development cycle. Audience: Researchers and graduate students familiar with MOS device physics, working in the field of device characterization and modeling. Also intended for industrial engineers working in device development, seeking to enlarge their understanding of measurement methods. The book additionally addresses device-based characterization for material and process engineers and for circuit designers. A valuable reference that may be used as a text for advanced courses on the subject.

Fundamentals of Bias Temperature Instability in MOS Transistors

Author : Souvik Mahapatra
Publisher : Springer
ISBN 13 : 8132225082
Total Pages : 269 pages
Book Rating : 4.1/5 (322 download)

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Book Synopsis Fundamentals of Bias Temperature Instability in MOS Transistors by : Souvik Mahapatra

Download or read book Fundamentals of Bias Temperature Instability in MOS Transistors written by Souvik Mahapatra and published by Springer. This book was released on 2015-08-05 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike.

Transport in Metal-Oxide-Semiconductor Structures

Author : Hamid Bentarzi
Publisher : Springer Science & Business Media
ISBN 13 : 3642163041
Total Pages : 115 pages
Book Rating : 4.6/5 (421 download)

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Book Synopsis Transport in Metal-Oxide-Semiconductor Structures by : Hamid Bentarzi

Download or read book Transport in Metal-Oxide-Semiconductor Structures written by Hamid Bentarzi and published by Springer Science & Business Media. This book was released on 2011-01-12 with total page 115 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.

Physics and Technology of High-k Gate Dielectrics 6

Author : S. Kar
Publisher : The Electrochemical Society
ISBN 13 : 1566776511
Total Pages : 550 pages
Book Rating : 4.5/5 (667 download)

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Book Synopsis Physics and Technology of High-k Gate Dielectrics 6 by : S. Kar

Download or read book Physics and Technology of High-k Gate Dielectrics 6 written by S. Kar and published by The Electrochemical Society. This book was released on 2008-10 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: The issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, novel and still higher permittivity dielectric materials, CMOS processing with high-K layers, metals for gate electrodes, interface issues, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.

MOS (Metal Oxide Semiconductor) Physics and Technology

Author : E. H. Nicolliam
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (819 download)

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Book Synopsis MOS (Metal Oxide Semiconductor) Physics and Technology by : E. H. Nicolliam

Download or read book MOS (Metal Oxide Semiconductor) Physics and Technology written by E. H. Nicolliam and published by . This book was released on 1982 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Advanced MOS Device Physics

Author : Norman Einspruch
Publisher : Elsevier
ISBN 13 : 0323153135
Total Pages : 383 pages
Book Rating : 4.3/5 (231 download)

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Book Synopsis Advanced MOS Device Physics by : Norman Einspruch

Download or read book Advanced MOS Device Physics written by Norman Einspruch and published by Elsevier. This book was released on 2012-12-02 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 18: Advanced MOS Device Physics explores several device physics topics related to metal oxide semiconductor (MOS) technology. The emphasis is on physical description, modeling, and technological implications rather than on the formal aspects of device theory. Special attention is paid to the reliability physics of small-geometry MOSFETs. Comprised of eight chapters, this volume begins with a general picture of MOS technology development from the device and processing points of view. The critical issue of hot-carrier effects is discussed, along with the device engineering aspects of this problem; the emerging low-temperature MOS technology; and the problem of latchup in scaled MOS circuits. Several device models that are suitable for use in circuit simulators are also described. The last chapter examines novel electron transport effects observed in ultra-small MOS structures. This book should prove useful to semiconductor engineers involved in different aspects of MOS technology development, as well as for researchers in this field and students of the corresponding disciplines.

Publications

Author : United States. National Bureau of Standards
Publisher :
ISBN 13 :
Total Pages : 548 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Publications by : United States. National Bureau of Standards

Download or read book Publications written by United States. National Bureau of Standards and published by . This book was released on 1975 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Publications of the National Bureau of Standards ... Catalog

Author : United States. National Bureau of Standards
Publisher :
ISBN 13 :
Total Pages : 548 pages
Book Rating : 4.3/5 ( download)

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Book Synopsis Publications of the National Bureau of Standards ... Catalog by : United States. National Bureau of Standards

Download or read book Publications of the National Bureau of Standards ... Catalog written by United States. National Bureau of Standards and published by . This book was released on 1974 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Publications of the National Bureau of Standards, 1986 Catalog

Author : United States. National Bureau of Standards
Publisher :
ISBN 13 :
Total Pages : 420 pages
Book Rating : 4.:/5 (321 download)

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Book Synopsis Publications of the National Bureau of Standards, 1986 Catalog by : United States. National Bureau of Standards

Download or read book Publications of the National Bureau of Standards, 1986 Catalog written by United States. National Bureau of Standards and published by . This book was released on 1987 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Publications of the National Institute of Standards and Technology ... Catalog

Author : National Institute of Standards and Technology (U.S.)
Publisher :
ISBN 13 :
Total Pages : 398 pages
Book Rating : 4.:/5 (31 download)

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Book Synopsis Publications of the National Institute of Standards and Technology ... Catalog by : National Institute of Standards and Technology (U.S.)

Download or read book Publications of the National Institute of Standards and Technology ... Catalog written by National Institute of Standards and Technology (U.S.) and published by . This book was released on 1987 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Advancing Silicon Carbide Electronics Technology II

Author : Konstantinos Zekentes
Publisher : Materials Research Forum LLC
ISBN 13 : 164490067X
Total Pages : 292 pages
Book Rating : 4.6/5 (449 download)

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Book Synopsis Advancing Silicon Carbide Electronics Technology II by : Konstantinos Zekentes

Download or read book Advancing Silicon Carbide Electronics Technology II written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2020-03-15 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book presents an in-depth review and analysis of Silicon Carbide device processing. The main topics are: (1) Silicon Carbide Discovery, Properties and Technology, (2) Processing and Application of Dielectrics in Silicon Carbide Devices, (3) Doping by Ion Implantation, (4) Plasma Etching and (5) Fabrication of Silicon Carbide Nanostructures and Related Devices. The book is also suited as supplementary textbook for graduate courses. Keywords: Silicon Carbide, SiC, Technology, Processing, Semiconductor Devices, Material Properties, Polytypism, Thermal Oxidation, Post Oxidation Annealing, Surface Passivation, Dielectric Deposition, Field Effect Mobility, Ion Implantation, Post Implantation Annealing, Channeling, Surface Roughness, Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Micromasking, Microtrenching, Nanocrystal, Nanowire, Nanotube, Nanopillar, Nanoelectromechanical Systems (NEMS).

Selected Semiconductor Research

Author : Ming-Fu Li
Publisher : World Scientific
ISBN 13 : 1848164068
Total Pages : 529 pages
Book Rating : 4.8/5 (481 download)

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Book Synopsis Selected Semiconductor Research by : Ming-Fu Li

Download or read book Selected Semiconductor Research written by Ming-Fu Li and published by World Scientific. This book was released on 2011 with total page 529 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book on solid state physics has been written with an emphasis on recent developments in quantum many-body physics approaches. It starts by covering the classical theory of solids and electrons and describes how this classical model has failed. The authors then present the quantum mechanical model of electrons in a lattice and they also discuss the theory of conductivity. Extensive reviews on the topic are provided in a compact manner so that any non-specialist can follow from the beginning.The authors cover the system of magnetism in a similar way and various problems in magnetic materials are discussed. The book also discusses the Ising chain, the Heisenberg model, the Kondo effect and superconductivity, amongst other relevant topics.In the final chapter, the authors present some works related to contemporary research topics, such as quantum entanglement in many-body systems and quantum simulations. They also include a short review of some of the possible applications of solid state quantum information in biological systems.