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Molecular Beam Epitaxy Technology And The Growth And Characterization Of Low Temperature Gaas
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Book Synopsis Molecular Beam Epitaxy Technology and the Growth and Characterization of Low Temperature GaAs by : Laffite Flanders
Download or read book Molecular Beam Epitaxy Technology and the Growth and Characterization of Low Temperature GaAs written by Laffite Flanders and published by . This book was released on 1997 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Defect Characterization of Low Temperature Molecular Beam Epitaxy GaAs by : Ri-an Zhao
Download or read book Growth and Defect Characterization of Low Temperature Molecular Beam Epitaxy GaAs written by Ri-an Zhao and published by . This book was released on 2002 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxy by : Robin F.C. Farrow
Download or read book Molecular Beam Epitaxy written by Robin F.C. Farrow and published by Elsevier. This book was released on 1995-12-31 with total page 795 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.
Book Synopsis Molecular Beam Epitaxy by : Brian R. Pamplin
Download or read book Molecular Beam Epitaxy written by Brian R. Pamplin and published by Elsevier. This book was released on 2017-08-31 with total page 181 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy introduces the reader to the use of molecular beam epitaxy (MBE) in the generation of III-V and IV-VI compounds and alloys and describes the semiconductor and integrated optics reasons for using the technique. Topics covered include semiconductor superlattices by MBE; design considerations for MBE systems; periodic doping structure in gallium arsenide (GaAs); nonstoichiometry and carrier concentration control in MBE of compound semiconductors; and MBE techniques for IV-VI optoelectronic devices. The use of MBE to fabricate integrated optical devices and to study semiconductor surface and crystal physics is also considered. This book is comprised of eight chapters and opens with an overview of MBE as a crystal growth technique. The discussion then turns to the deposition of semiconductor superlattices of GaAs by MBE; important factors that must be considered in the design of a MBE system such as flux uniformity, crucible volume, heat shielding, source baffling, and shutters; and control of stoichiometry deviation in MBE growth of compound semiconductors, along with the effects of such deviation on the electronic properties of the grown films. The following chapters focus on the use of MBE techniques for growth of IV-VI optoelectronic devices; for fabrication of integrated optical devices; and for the study of semiconductor surface and crystal physics. The final chapter examines a superlattice consisting of a periodic sequence of ultrathin p- and n-doped semiconductor layers, possibly with intrinsic layers in between. This monograph will be of interest to chemists, physicists, and crystallographers.
Book Synopsis Electrical Characterization of Nonstoichiometric GaAs Grown at Low Temperature by Molecular Beam Epitaxy by : James P Ibbetson
Download or read book Electrical Characterization of Nonstoichiometric GaAs Grown at Low Temperature by Molecular Beam Epitaxy written by James P Ibbetson and published by . This book was released on 1997 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxy by : Marian A. Herman
Download or read book Molecular Beam Epitaxy written by Marian A. Herman and published by Springer Science & Business Media. This book was released on 2013-03-08 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: This first-ever monograph on molecular beam epitaxy (MBE) gives a comprehensive presentation of recent developments in MBE, as applied to crystallization of thin films and device structures of different semiconductor materials. MBE is a high-vacuum technology characterized by relatively low growth temperature, ability to cease or initiate growth abruptly, smoothing of grown surfaces and interfaces on an atomic scale, and the unique facility for in situ analysis of the structural parameters of the growing film. The excellent exploitation parameters of such MBE-produced devices as quantum-well lasers, high electron mobility transistors, and superlattice avalanche photodiodes have caused this technology to be intensively developed. The main text of the book is divided into three parts. The first presents and discusses the more important problems concerning MBE equipment. The second discusses the physico-chemical aspects of the crystallization processes of different materials (mainly semiconductors) and device structures. The third part describes the characterization methods which link the physical properties of the grown film or structures with the technological parameters of the crystallization procedure. Latest achievements in the field are emphasized, such as solid source MBE, including silicon MBE, gas source MBE, especially metalorganic MBE, phase-locked epitaxy and atomic-layer epitaxy, photoassisted molecular layer epitaxy and migration enhanced epitaxy.
Book Synopsis Molecular Beam Epitaxy by : Mohamed Henini
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Book Synopsis Molecular Beam Epitaxy by : John Wilfred Orton
Download or read book Molecular Beam Epitaxy written by John Wilfred Orton and published by . This book was released on 2015 with total page 529 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early 'home-made' variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called 'low-dimensional structures' (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.
Book Synopsis Successful Molecular Beam Epitaxy Growth and Characterization of (110) GaAs/GaAs and (110) AlGaAs/GaAs by : Lisa Parechanian Allen
Download or read book Successful Molecular Beam Epitaxy Growth and Characterization of (110) GaAs/GaAs and (110) AlGaAs/GaAs written by Lisa Parechanian Allen and published by . This book was released on 1987 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Characterization of In(1-x)Ga(x)As(y)P(1-y) and GaAs Using Molecular Beam Epitaxy by : D. W. Covington
Download or read book Growth and Characterization of In(1-x)Ga(x)As(y)P(1-y) and GaAs Using Molecular Beam Epitaxy written by D. W. Covington and published by . This book was released on 1980 with total page 129 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report describes the technical work accomplished during the first year of a two-year study of binary and quaternary semiconductors grown by molecular beam epitaxy. Research on GaAs materials demonstrated doping profiles for peeled film, mixer diodes and low-high-low, millimeter wave IMPATT diodes. Iron has been investigated as a potential MBE dopant for FET buffer layer applications. Although compensated layers exhibiting the Fe(2+) line at 0.371 eV were obtained for doping oven temperatures less than but close to 1013 C at GaAs growth rates of 1.0 micron per hr. there was unintentional accumulation of iron at the outer surface reserved for the active layer in conventional FET structures. Before initiating the study of quaternary materials, the MBE growth conditions were established for the ternary In(x)Ga(1-x)As. Layers of the latter semiconductor grown on GaAs substrates held at 510 C showed significant changes in surface morphology and electrical properties for x greater than but close to 0.3. A cryopumped MBE system containing six oven positions has been developed for growing the quaternary In(1-x)Ga(x)As(y)P(1-y) which requires relatively intense beams of P molecules. Lattice-matched In(1-x)Ga(x)As(y)P(1-y) layers have been deposited in this system on (001) GaAs substrates using ovens loaded with Ga, In, As, and GaP. Epitaxy was achieved.
Book Synopsis Molecular Beam Epitaxy by : R. F. C. Farrow
Download or read book Molecular Beam Epitaxy written by R. F. C. Farrow and published by William Andrew. This book was released on 1995 with total page 772 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.
Book Synopsis Growth and Characterization of In [subscript 1-x] Ga [subscript X] As [subscript Y] P [subscript 1-y] AndGaAs Using Molecular Beam Epitaxy by : Noah Walter Cox
Download or read book Growth and Characterization of In [subscript 1-x] Ga [subscript X] As [subscript Y] P [subscript 1-y] AndGaAs Using Molecular Beam Epitaxy written by Noah Walter Cox and published by . This book was released on 1979 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Device Applications and Characterization of Nonstoichiometric GaAs Grown by Molecular Beam Epitaxy by : Frank William Smith
Download or read book The Device Applications and Characterization of Nonstoichiometric GaAs Grown by Molecular Beam Epitaxy written by Frank William Smith and published by . This book was released on 1990 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxial Growth and Characterization of GaAs and GaAsBi Based Semiconductor Devices by : Mahsa Mahtab
Download or read book Molecular Beam Epitaxial Growth and Characterization of GaAs and GaAsBi Based Semiconductor Devices written by Mahsa Mahtab and published by . This book was released on 2020 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs(1-x)Bi(x) (x = 0 to 17%) optical properties were investigated by spectroscopic ellipsometry (in energy ranges of 0.37-9.0 eV). Optical features in the dielectric function, known as the critical points, were distinguished and modeled using standard analytic line shapes. The energy dependence of the critical points energies was thoroughly investigated as a function of Bi content and thin film strain. Critical points analysis in the Brillion zone showed that the top of the valence band is most strongly dependent on Bi content compared to other parts of the band structure. In addition, an interesting new critical point was observed that is attributed to alternative allowed optical transitions made possible by changes to the top of the valence band caused by resonant interactions with Bi orbitals. Several of the critical points were extrapolated to 100% Bi and showed reasonable agreement with the calculated band structure of GaBi. GaAs(1-x)Bi(x) (x= 03, 0.7 and 1.1%) based p+/n and n+/p heterostructure photovoltaic performance was characterized through IV and CV measurement. By introduction of Bi into GaAs, a non-zero EQE below the GaAs band edge energy was observed while the highest efficiency was obtained by ~ 0.7% Bi incorporation. EQE spectrum was modeled to find the minority carrier diffusion lengths of ~ Ln = 1600 and Lp = 140 nm for p-doped and n-doped GaAs92Bi08 in the doping profile of 10^15 - 10^16 cm^-3. Analysis of the CV measurement confirmed the background n-doping effect of Bi atom and the essential role of the cap layer to reduce multi-level recombination mechanisms at the cell edge to improve ideality factor. Low temperature grown GaAs was optimized to be used as photoconductive antenna in THz time-domain spectroscopy setup. The As content was investigated to optimize photo-carrier generation using 1550 nm laser excitation while maintaining high mobility and resistivity required for optical switching. A barrier layer of AlAs was added below the LT-GaAs to limit carrier diffusion into the GaAs substrate. Moreover, LT-GaAs layer thickness and post-growth annealing condition was optimized. The optimized structure (2-μm LT-GaAs on 60-nm AlAs, under As2:Ga BEP of ~7, annealed at 550°C for 1 minute) outperformed a commercial InGaAs antenna by a factor of 15 with 4.5 THz bandwidth and 75 dB signal-to-noise ratio at 1550 nm wavelength.
Book Synopsis Growth and Characterization of Low Density InAs/GaAs Quantum Dots for Quantum Information Processes by :
Download or read book Growth and Characterization of Low Density InAs/GaAs Quantum Dots for Quantum Information Processes written by and published by . This book was released on 2007 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Characterization of Low Temperature Silicon Selective Epitaxy by : Tri-Rung Yew
Download or read book Growth and Characterization of Low Temperature Silicon Selective Epitaxy written by Tri-Rung Yew and published by . This book was released on 1990 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxy and Heterostructures by : L.L. Chang
Download or read book Molecular Beam Epitaxy and Heterostructures written by L.L. Chang and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt: The NATO Advanced Study Institute on "Molecular Beam Epitaxy (MBE) and Heterostructures" was held at the Ettore Majorana Center for Scientific Culture, Erice, Italy, on March 7-19, 1983, the second course of the International School of Solid-State Device Re search. This volume contains the lectures presented at the Institute. Throughout the history of semiconductor development, the coupling between processing techniques and device structures for both scientific investigations and technological applications has time and again been demonstrated. Newly conceived ideas usually demand the ultimate in existing techniques, which often leads to process innova tions. The emergence of a process, on the other hand, invariably creates opportunities for device improvement and invention. This intimate relationship between the two has most recently been witnessed in MBE and heterostructures, the subject of this Institute. This volume is divided into several sections. Chapter 1 serves as an introduction by providing a perspective of the subject. This is followed by two sections, each containing four chapters, Chapters 2-5 addressing the principles of the MBE process and Chapters 6-9 describ ing its use in the growth of a variety of semiconductors and heteros tructures. The next two sections, Chapters to-II and Chapters 12-15, treat the theory and the electronic properties of the heterostructures, respectively. The focus is on energy quantization of the two dimensional electron system. Chapters 16-17 are devoted to device structures, including both field-effect transistors and lasers and detec tors.
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