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Molecular Beam Epitaxy And Characterization Of Strained Heterostructures And Devices Impact Ionization
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Book Synopsis MOLECULAR BEAM EPITAXY AND CHARACTERIZATION OF STRAINED HETEROSTRUCTURES AND DEVICES (IMPACT IONIZATION). by : YAOCHUNG CHEN
Download or read book MOLECULAR BEAM EPITAXY AND CHARACTERIZATION OF STRAINED HETEROSTRUCTURES AND DEVICES (IMPACT IONIZATION). written by YAOCHUNG CHEN and published by . This book was released on 1992 with total page 454 pages. Available in PDF, EPUB and Kindle. Book excerpt: capability.
Book Synopsis Novel High Speed Devices and Heterostructures Prepared by Molecular Beam Epitaxy by : Hadis Morkoc
Download or read book Novel High Speed Devices and Heterostructures Prepared by Molecular Beam Epitaxy written by Hadis Morkoc and published by . This book was released on 1989 with total page 23 pages. Available in PDF, EPUB and Kindle. Book excerpt: Study of the small-bandgap III-V compounds InAs(1-x)Sb(x) and GaAs (1-x)Sb(x) has continued towards the goal of eventual application to long wavelength infrared sources and detectors. Optical characterization of these small bandgap compounds was performed, resulting in the best reported low-temperature photoluminescence linewidth of 7.6 meV for a GaAs(0.46)Sb(0.54) sample. The first experimental data on the band alignment of the GaSb/GaAs system was reported from the results of photoreflectance measurements. A heavy-hole band offset of approx. 1.7 for GaAs(0.9)Sb(0.1), establishing a type-II structure with electrons in the GaAs layers and holes in the GaAs(1-x)Sb(x) layers. Electrical characterization of these materials was also studied by variable temperature Hall measurements. For the GaAs(1-x)Sb(x) material grown on InP, a two-acceptor model was forwarded to describe the Hall coefficient temperature behavior. The growth of InAs(1-x)Sb(x) on GaAs, is studied using the effects of graded layers, strained-layer superlattices, and titled substrates to reduce or constrain the misfit dislocations induced by the large lattice mismatch (7.2 - 14.6% for 0
Author :North Atlantic Treaty Organization. Scientific Affairs Division Publisher :Taylor & Francis US ISBN 13 :9789024731183 Total Pages :732 pages Book Rating :4.7/5 (311 download)
Book Synopsis Molecular Beam Epitaxy and Heterostructures by : North Atlantic Treaty Organization. Scientific Affairs Division
Download or read book Molecular Beam Epitaxy and Heterostructures written by North Atlantic Treaty Organization. Scientific Affairs Division and published by Taylor & Francis US. This book was released on 1984-12-31 with total page 732 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of the NATO Advanced Study Institute on Molecular Beam Epitaxy (MBE) and Heterostructures, Erice, Italy, March 7-19, 1983
Book Synopsis Silicon Molecular Beam Epitaxy by : E. Kasper
Download or read book Silicon Molecular Beam Epitaxy written by E. Kasper and published by CRC Press. This book was released on 2018-05-04 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 700 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Book Synopsis Molecular Beam Epitaxy Growth and Characterization of Ultra-wide Bandgap Materials and Devices by : Ryan Lowry Page
Download or read book Molecular Beam Epitaxy Growth and Characterization of Ultra-wide Bandgap Materials and Devices written by Ryan Lowry Page and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ultrawide bandgap (UWBG) semiconductors, especially those in the III-nitride family of materials with their exceptional electronic, optical, and thermal properties, will play a highly important role in the next generation of ultraviolet photonic and high power electronic devices. Currently, the performance and utilization of many UWBG materials in device applications is hampered by fundamental materials challenges with growth and doping. This thesis covers the growth and materials properties of two III-nitride UWBG materials, primarily grown by molecular beam epitaxy (MBE). First, hexagonal boron nitride, a two dimensional, layered material with unique optical properties and potential applications in van der Waals-based devices and heterostructures will be discussed. Second, recent work on aluminum nitride (AlN) and aluminum gallium nitride (AlGaN) alloys will be presented.This work begins with an investigation into the high temperature MBE growth of hBN on several substrates. The layers show improved quality over previous reports and are thoroughly characterized. Next, the optical properties of these hBN films, as well as those of bulk doped hBN crystals, are investigated by cryogenic deep UV photoluminescence. Several new emission characteristics are identified and studied in these hBN materials, including carbon-induced luminescence, the direct bandgap transition of monolayer hBN, and single photon emission from hBN defects. Transitioning to the AlGaN platform, the growth of AlN and AlGaN by MBE on high quality single crystalline bulk AlN substrates is outlined and expanded upon, including an analysis of AlGaN doping with Si and Mg. The MBE growth, doping, and electron transport of heavily Si-doped, high Al mole fraction Al- GaN on bulk AlN is investigated, revealing upper practical limits to both Al mole fraction and Si doping density for high conductivity n-type films. In addition to this work on material growth and characterization, several AlGaN-based devices, an optically pumped UV laser and a Schottky barrier diode, will be introduced and discussed. These devices directly benefit from the preceding advances in AlGaN growth and doping. Finally, initial exploratory investigations and results on cubic phase BN as well as boron aluminum nitride alloys will be presented.
Download or read book Ceramic Abstracts written by and published by . This book was released on 1998 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1058 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Materials for Optoelectronic Devices, OEICs and Photonics by : H. Schlötterer
Download or read book Materials for Optoelectronic Devices, OEICs and Photonics written by H. Schlötterer and published by Elsevier. This book was released on 1991-10-08 with total page 542 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of the contributions in this volume is to give a current overview on the basic properties and applications of semiconductor and nonlinear optical materials for optoelectronics and integrated optics. They provide a cross-linkage between different materials (III-V, II-VI, Si-Ge, glasses, etc.), various sample dimensions (from bulk crystals to quantum dots), and a range of techniques for growth (LPE to MOMBE) and for processing (from surface passivation to ion beams). Major growth techniques and materials are discussed, including the sophisticated technologies required to exploit the exciting properties of low dimensional semiconductors. These proceedings will prove an invaluable guide to the current state of optoelectronic and nonlinear optical materials development, as well as indicating trends and also future markets for optoelectronic devices.
Book Synopsis Compound Semiconductors 1996, Proceedings of the Twenty-Third INT Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996 by : M.S. Shur
Download or read book Compound Semiconductors 1996, Proceedings of the Twenty-Third INT Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996 written by M.S. Shur and published by CRC Press. This book was released on 2020-10-28 with total page 1087 pages. Available in PDF, EPUB and Kindle. Book excerpt: Providing a comprehensive overview of developments to both the academic and industrial communities, Compound Semiconductors 1996 covers all types of compound semiconducting materials and devices. The book includes results on blue and green lasers, heterostructure devices, nanoelectronics, and novel wide band gap semiconductors. With invited review papers and research results in current topics of interest, this volume is part of a well-known series of conferences for the dissemination of research results in the field.
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 1948 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 1995 with total page 818 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxial Growth and Characterization of InGaN Based Alloys, Heterostructures and Multi-quantum Wells by : Rajminder Singh
Download or read book Molecular Beam Epitaxial Growth and Characterization of InGaN Based Alloys, Heterostructures and Multi-quantum Wells written by Rajminder Singh and published by . This book was released on 1997 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis International Aerospace Abstracts by :
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1999 with total page 974 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Focus on Crystal Growth Research by : George V. Karas
Download or read book Focus on Crystal Growth Research written by George V. Karas and published by Nova Publishers. This book was released on 2006 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt: Experimental and theoretical aspects of crystal growth and its applications, e.g. in devices, are within the scope of these new books . Experimental and theoretical contributions are included in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallisation in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapour deposition, growth of III-V and II-VI and other semiconductors; characterisation of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multi-layer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials.
Book Synopsis Proceedings of the IEEE ... International Symposium on Compound Semiconductors by :
Download or read book Proceedings of the IEEE ... International Symposium on Compound Semiconductors written by and published by . This book was released on 1996 with total page 1096 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Current Research in Britain written by and published by . This book was released on 1991 with total page 1386 pages. Available in PDF, EPUB and Kindle. Book excerpt:
