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Molecular Beam Epitaxy And Characterization Of Doped And Undoped Cubic Gan Layers
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Book Synopsis Molecular Beam Epitaxy and Characterization of Doped and Undoped Cubic GaN Layers by : Bernd Schöttker
Download or read book Molecular Beam Epitaxy and Characterization of Doped and Undoped Cubic GaN Layers written by Bernd Schöttker and published by . This book was released on 1999 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization and Doping of Epitaxially Grown GaN and A1N on Si Using Molecular Beam Epitaxy by : Chi Hang Ko
Download or read book Characterization and Doping of Epitaxially Grown GaN and A1N on Si Using Molecular Beam Epitaxy written by Chi Hang Ko and published by . This book was released on 2007 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nitride based semiconductors have a unique combination of properties that make them especially suitable for many of the new challenges and applications of the twenty-first century, The group III nitride semiconductors, aluminum nitride (AlN), gallium nitride (GaN), and indium nitride (InN) form a complete series of ternary alloys (InGaN, InAlN, and AlGaN) whose direct band gaps range from 1.9 to 6.2 eV. These compound semiconductors far exceed the physical properties of silicon, and GaN is the most dynamic of them. GaN is often referred to as the "final frontier of semiconductors", Its high thermal conductivity, high melting temperature, low dielectric constant and high breakdown voltage make it an attractive semiconductor for many electronic and optoelectronic devices such as light emitting diodes, laser diodes, radiation detectors, high power and high frequency devices capable of operating at high temperatures, and in hostile chemical environments and so on, GaN thin films, either intrinsic or doped with silicon or magnesium, were grown on silicon(lll) substrates with AIN buffer layers by Molecular Beam Epitaxy (MBE) under a broad range of growth parameters in this study. The samples were characterized using Filmetrics thin film analyzer, Atomic Force Microscopy (AFM), Photoluminescence Spectroscopy, hot probe, and four-point probe. Material growth began with deposition of a 0.3 monolayer (ML) of Al on the SiC 111) 7x7 surface leading to fully passivated Si(111) [square root]3x[square root]3-Al surface, on which AlN buffer layers and then the GaN layers were deposited. X-ray diffraction measurements indicated growth of single-crystalline hexagonal GaN(00l) while PL measurement demonstrated a peak position corresponding to bulk hexagonal GaN, Sample surface morphology, roughness, and resistivity showed a strong dependence on growth conditions and dopant types. The percent roughness/thickness on the GaN fIlms decreased linearly with increasing Si dopant temperature and increased exponentially to the first order with increasing Mg dopant temperature. P-type doping was achieved using Mg and the resistivity of both Si- and Mg-doped GaN samples showed an inverse linear relationship with the dopant temperatures.
Book Synopsis Molecular Beam Epitaxy Growth and Characterization of ZnO-based Layers and Heterostructures by : Abdelhamid Abdelrehim Mahmoud Elshaer
Download or read book Molecular Beam Epitaxy Growth and Characterization of ZnO-based Layers and Heterostructures written by Abdelhamid Abdelrehim Mahmoud Elshaer and published by Cuvillier Verlag. This book was released on 2008 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxy Growth and Characterization of Ultra-wide Bandgap Materials and Devices by : Ryan Lowry Page
Download or read book Molecular Beam Epitaxy Growth and Characterization of Ultra-wide Bandgap Materials and Devices written by Ryan Lowry Page and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ultrawide bandgap (UWBG) semiconductors, especially those in the III-nitride family of materials with their exceptional electronic, optical, and thermal properties, will play a highly important role in the next generation of ultraviolet photonic and high power electronic devices. Currently, the performance and utilization of many UWBG materials in device applications is hampered by fundamental materials challenges with growth and doping. This thesis covers the growth and materials properties of two III-nitride UWBG materials, primarily grown by molecular beam epitaxy (MBE). First, hexagonal boron nitride, a two dimensional, layered material with unique optical properties and potential applications in van der Waals-based devices and heterostructures will be discussed. Second, recent work on aluminum nitride (AlN) and aluminum gallium nitride (AlGaN) alloys will be presented.This work begins with an investigation into the high temperature MBE growth of hBN on several substrates. The layers show improved quality over previous reports and are thoroughly characterized. Next, the optical properties of these hBN films, as well as those of bulk doped hBN crystals, are investigated by cryogenic deep UV photoluminescence. Several new emission characteristics are identified and studied in these hBN materials, including carbon-induced luminescence, the direct bandgap transition of monolayer hBN, and single photon emission from hBN defects. Transitioning to the AlGaN platform, the growth of AlN and AlGaN by MBE on high quality single crystalline bulk AlN substrates is outlined and expanded upon, including an analysis of AlGaN doping with Si and Mg. The MBE growth, doping, and electron transport of heavily Si-doped, high Al mole fraction Al- GaN on bulk AlN is investigated, revealing upper practical limits to both Al mole fraction and Si doping density for high conductivity n-type films. In addition to this work on material growth and characterization, several AlGaN-based devices, an optically pumped UV laser and a Schottky barrier diode, will be introduced and discussed. These devices directly benefit from the preceding advances in AlGaN growth and doping. Finally, initial exploratory investigations and results on cubic phase BN as well as boron aluminum nitride alloys will be presented.
Book Synopsis Molecular Beam Epitaxy and Heterostructures by : L.L. Chang
Download or read book Molecular Beam Epitaxy and Heterostructures written by L.L. Chang and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt: The NATO Advanced Study Institute on "Molecular Beam Epitaxy (MBE) and Heterostructures" was held at the Ettore Majorana Center for Scientific Culture, Erice, Italy, on March 7-19, 1983, the second course of the International School of Solid-State Device Re search. This volume contains the lectures presented at the Institute. Throughout the history of semiconductor development, the coupling between processing techniques and device structures for both scientific investigations and technological applications has time and again been demonstrated. Newly conceived ideas usually demand the ultimate in existing techniques, which often leads to process innova tions. The emergence of a process, on the other hand, invariably creates opportunities for device improvement and invention. This intimate relationship between the two has most recently been witnessed in MBE and heterostructures, the subject of this Institute. This volume is divided into several sections. Chapter 1 serves as an introduction by providing a perspective of the subject. This is followed by two sections, each containing four chapters, Chapters 2-5 addressing the principles of the MBE process and Chapters 6-9 describ ing its use in the growth of a variety of semiconductors and heteros tructures. The next two sections, Chapters to-II and Chapters 12-15, treat the theory and the electronic properties of the heterostructures, respectively. The focus is on energy quantization of the two dimensional electron system. Chapters 16-17 are devoted to device structures, including both field-effect transistors and lasers and detec tors.
Book Synopsis Growth by Molecular Beam Epitaxy and Electrical Characterization of C1-doped ZnSe/(100)GaAs Epitaxial Layers by : Christopher M. Rouleau
Download or read book Growth by Molecular Beam Epitaxy and Electrical Characterization of C1-doped ZnSe/(100)GaAs Epitaxial Layers written by Christopher M. Rouleau and published by . This book was released on 1991 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis GaN and Related Alloys - 2002: Volume 743 by : Materials Research Society. Meeting
Download or read book GaN and Related Alloys - 2002: Volume 743 written by Materials Research Society. Meeting and published by . This book was released on 2003-06-02 with total page 900 pages. Available in PDF, EPUB and Kindle. Book excerpt: This year's nitride symposium showed the scope of nitride-related advances spanning basic materials physics over process technology to high-performance devices. Progress was reported in bulk growth of GaN and AlN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. Advances in the development of nitride-based electronic devices with new heterostructure FET designs for RF power applications, including those on Si substrates and wafer fusion, are also reported. This book captures the exciting developments in this rapidly progressing field. Topics include: epitaxy - devices and defect reduction; defects and characterization; epitaxy - nonpolar orientations and alloys; optical properties; UV emitters and detectors; visible light emitters; electronic devices; characterization of defects and transport; and contacts, processing and p-type nitrides.
Book Synopsis Accords-Puncten, welche zwischen Ihro Majest. zu Schweden Reichs-Raht und Admirals auch Lieut-Generals Herrn Carl Gustaph Wrangels Hochgräfl. Exell. eines Theils, und dem Herrn Gouvernatorn Christoffer Bille zu Mehlgardt ... andern Theils den 6. September 1658 wegen Ubergabe der Vestung Cronenburg an Ihr. Königl. Majest. zu Schweden verglichen und geschlossen by :
Download or read book Accords-Puncten, welche zwischen Ihro Majest. zu Schweden Reichs-Raht und Admirals auch Lieut-Generals Herrn Carl Gustaph Wrangels Hochgräfl. Exell. eines Theils, und dem Herrn Gouvernatorn Christoffer Bille zu Mehlgardt ... andern Theils den 6. September 1658 wegen Ubergabe der Vestung Cronenburg an Ihr. Königl. Majest. zu Schweden verglichen und geschlossen written by and published by . This book was released on 1658 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxy by : John Wilfred Orton
Download or read book Molecular Beam Epitaxy written by John Wilfred Orton and published by . This book was released on 2015 with total page 529 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early 'home-made' variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called 'low-dimensional structures' (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.
Book Synopsis Growth and Characterization of Mn-doped InP Molecular Beam Epitaxial Layers by : John Ogawa Borland
Download or read book Growth and Characterization of Mn-doped InP Molecular Beam Epitaxial Layers written by John Ogawa Borland and published by . This book was released on 1981 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxy by : Robin F.C. Farrow
Download or read book Molecular Beam Epitaxy written by Robin F.C. Farrow and published by Elsevier. This book was released on 1995-12-31 with total page 795 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.
Book Synopsis Molecular Beam Epitaxy by : Marian A. Herman
Download or read book Molecular Beam Epitaxy written by Marian A. Herman and published by Springer Science & Business Media. This book was released on 2013-03-08 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: This first-ever monograph on molecular beam epitaxy (MBE) gives a comprehensive presentation of recent developments in MBE, as applied to crystallization of thin films and device structures of different semiconductor materials. MBE is a high-vacuum technology characterized by relatively low growth temperature, ability to cease or initiate growth abruptly, smoothing of grown surfaces and interfaces on an atomic scale, and the unique facility for in situ analysis of the structural parameters of the growing film. The excellent exploitation parameters of such MBE-produced devices as quantum-well lasers, high electron mobility transistors, and superlattice avalanche photodiodes have caused this technology to be intensively developed. The main text of the book is divided into three parts. The first presents and discusses the more important problems concerning MBE equipment. The second discusses the physico-chemical aspects of the crystallization processes of different materials (mainly semiconductors) and device structures. The third part describes the characterization methods which link the physical properties of the grown film or structures with the technological parameters of the crystallization procedure. Latest achievements in the field are emphasized, such as solid source MBE, including silicon MBE, gas source MBE, especially metalorganic MBE, phase-locked epitaxy and atomic-layer epitaxy, photoassisted molecular layer epitaxy and migration enhanced epitaxy.
Book Synopsis Molecular Beam Epitaxy by : Mohamed Henini
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Book Synopsis Molecular Beam Epitaxy by : Brian R. Pamplin
Download or read book Molecular Beam Epitaxy written by Brian R. Pamplin and published by Elsevier. This book was released on 2017-08-31 with total page 181 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy introduces the reader to the use of molecular beam epitaxy (MBE) in the generation of III-V and IV-VI compounds and alloys and describes the semiconductor and integrated optics reasons for using the technique. Topics covered include semiconductor superlattices by MBE; design considerations for MBE systems; periodic doping structure in gallium arsenide (GaAs); nonstoichiometry and carrier concentration control in MBE of compound semiconductors; and MBE techniques for IV-VI optoelectronic devices. The use of MBE to fabricate integrated optical devices and to study semiconductor surface and crystal physics is also considered. This book is comprised of eight chapters and opens with an overview of MBE as a crystal growth technique. The discussion then turns to the deposition of semiconductor superlattices of GaAs by MBE; important factors that must be considered in the design of a MBE system such as flux uniformity, crucible volume, heat shielding, source baffling, and shutters; and control of stoichiometry deviation in MBE growth of compound semiconductors, along with the effects of such deviation on the electronic properties of the grown films. The following chapters focus on the use of MBE techniques for growth of IV-VI optoelectronic devices; for fabrication of integrated optical devices; and for the study of semiconductor surface and crystal physics. The final chapter examines a superlattice consisting of a periodic sequence of ultrathin p- and n-doped semiconductor layers, possibly with intrinsic layers in between. This monograph will be of interest to chemists, physicists, and crystallographers.
Book Synopsis GaN-based Materials and Devices by : Michael Shur
Download or read book GaN-based Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2004 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.
Book Synopsis MOLECULAR BEAM EPITAXY AND CHARACTERIZATION OF STRAINED HETEROSTRUCTURES AND DEVICES (IMPACT IONIZATION). by : YAOCHUNG CHEN
Download or read book MOLECULAR BEAM EPITAXY AND CHARACTERIZATION OF STRAINED HETEROSTRUCTURES AND DEVICES (IMPACT IONIZATION). written by YAOCHUNG CHEN and published by . This book was released on 1992 with total page 454 pages. Available in PDF, EPUB and Kindle. Book excerpt: capability.
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 1948 pages. Available in PDF, EPUB and Kindle. Book excerpt:
