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Molecular Beam Epitaxial Growth Of High Quality Sb Based Iii V Semiconductor Heterostructures
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Book Synopsis Molecular Beam Epitaxial Growth of High-quality Sb-based III/V Semiconductor Heterostructures by : Christophe Charpentier
Download or read book Molecular Beam Epitaxial Growth of High-quality Sb-based III/V Semiconductor Heterostructures written by Christophe Charpentier and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxy by : Mohamed Henini
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Book Synopsis Molecular Beam Epitaxy by : Hajime Asahi
Download or read book Molecular Beam Epitaxy written by Hajime Asahi and published by John Wiley & Sons. This book was released on 2019-04-15 with total page 510 pages. Available in PDF, EPUB and Kindle. Book excerpt: Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.
Book Synopsis Molecular Beam Epitaxy by : Marian A. Herman
Download or read book Molecular Beam Epitaxy written by Marian A. Herman and published by Springer Science & Business Media. This book was released on 2013-03-08 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: This first-ever monograph on molecular beam epitaxy (MBE) gives a comprehensive presentation of recent developments in MBE, as applied to crystallization of thin films and device structures of different semiconductor materials. MBE is a high-vacuum technology characterized by relatively low growth temperature, ability to cease or initiate growth abruptly, smoothing of grown surfaces and interfaces on an atomic scale, and the unique facility for in situ analysis of the structural parameters of the growing film. The excellent exploitation parameters of such MBE-produced devices as quantum-well lasers, high electron mobility transistors, and superlattice avalanche photodiodes have caused this technology to be intensively developed. The main text of the book is divided into three parts. The first presents and discusses the more important problems concerning MBE equipment. The second discusses the physico-chemical aspects of the crystallization processes of different materials (mainly semiconductors) and device structures. The third part describes the characterization methods which link the physical properties of the grown film or structures with the technological parameters of the crystallization procedure. Latest achievements in the field are emphasized, such as solid source MBE, including silicon MBE, gas source MBE, especially metalorganic MBE, phase-locked epitaxy and atomic-layer epitaxy, photoassisted molecular layer epitaxy and migration enhanced epitaxy.
Book Synopsis Molecular Beam Epitaxy of III–V Compounds by : K. Ploog
Download or read book Molecular Beam Epitaxy of III–V Compounds written by K. Ploog and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 221 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial growth and electronic properties of semiconductor thin films are becoming increasingly important for fundamental and applied research and for device applications. This book contains a comprehensive collection of over 1500 references covering the first 25 years of molecular beam epitaxy of III-V compound semiconductors. Molecular beam epitaxy is a versatile thin film growth technique which emerged from the 'Three-temperature method' de veloped in the 1950s and from surface kinetic studies performed in the 1960s. III-V semiconductors such as GaAs, AlAs, (Galn)As, InP, etc., play an important role in the application to optoelectronic and high-speed devices. Over the past three years the technology of molecular beam epitaxy has spread rapidly to most major research and development laboratories through out the world, and an increasing number of highly refined III-V semiconduc tor structures with exactly tailored electronic properties have been pro duced and explored for fundamental studies as well as for device appl ica tion. The comprehensive bibliography on this dramatically expanding topic helps chemists, engineers, materials scientists, and physicists working in semiconductor research and development areas to sort out the important lit erature of their particular interest. A direct reproduction of the output of a computer printer has been used to enable rapid publication and to keep printing costs low. The work was sponsored by the 'Bundesministerium fUr Forschung und Technologie' of the Federal Republic of Germany. Stuttgart, January 1984 K. Ploog . K. Graf Subject Categories and References Introduction ... Year 1977 ...
Book Synopsis Molecular Beam Epitaxy and Heterostructures by : L.L. Chang
Download or read book Molecular Beam Epitaxy and Heterostructures written by L.L. Chang and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt: The NATO Advanced Study Institute on "Molecular Beam Epitaxy (MBE) and Heterostructures" was held at the Ettore Majorana Center for Scientific Culture, Erice, Italy, on March 7-19, 1983, the second course of the International School of Solid-State Device Re search. This volume contains the lectures presented at the Institute. Throughout the history of semiconductor development, the coupling between processing techniques and device structures for both scientific investigations and technological applications has time and again been demonstrated. Newly conceived ideas usually demand the ultimate in existing techniques, which often leads to process innova tions. The emergence of a process, on the other hand, invariably creates opportunities for device improvement and invention. This intimate relationship between the two has most recently been witnessed in MBE and heterostructures, the subject of this Institute. This volume is divided into several sections. Chapter 1 serves as an introduction by providing a perspective of the subject. This is followed by two sections, each containing four chapters, Chapters 2-5 addressing the principles of the MBE process and Chapters 6-9 describ ing its use in the growth of a variety of semiconductors and heteros tructures. The next two sections, Chapters to-II and Chapters 12-15, treat the theory and the electronic properties of the heterostructures, respectively. The focus is on energy quantization of the two dimensional electron system. Chapters 16-17 are devoted to device structures, including both field-effect transistors and lasers and detec tors.
Book Synopsis Molecular Beam Epitaxy by : Brian R. Pamplin
Download or read book Molecular Beam Epitaxy written by Brian R. Pamplin and published by Elsevier. This book was released on 2017-08-31 with total page 181 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy introduces the reader to the use of molecular beam epitaxy (MBE) in the generation of III-V and IV-VI compounds and alloys and describes the semiconductor and integrated optics reasons for using the technique. Topics covered include semiconductor superlattices by MBE; design considerations for MBE systems; periodic doping structure in gallium arsenide (GaAs); nonstoichiometry and carrier concentration control in MBE of compound semiconductors; and MBE techniques for IV-VI optoelectronic devices. The use of MBE to fabricate integrated optical devices and to study semiconductor surface and crystal physics is also considered. This book is comprised of eight chapters and opens with an overview of MBE as a crystal growth technique. The discussion then turns to the deposition of semiconductor superlattices of GaAs by MBE; important factors that must be considered in the design of a MBE system such as flux uniformity, crucible volume, heat shielding, source baffling, and shutters; and control of stoichiometry deviation in MBE growth of compound semiconductors, along with the effects of such deviation on the electronic properties of the grown films. The following chapters focus on the use of MBE techniques for growth of IV-VI optoelectronic devices; for fabrication of integrated optical devices; and for the study of semiconductor surface and crystal physics. The final chapter examines a superlattice consisting of a periodic sequence of ultrathin p- and n-doped semiconductor layers, possibly with intrinsic layers in between. This monograph will be of interest to chemists, physicists, and crystallographers.
Book Synopsis Gas Source Molecular Beam Epitaxy by : Morton B. Panish
Download or read book Gas Source Molecular Beam Epitaxy written by Morton B. Panish and published by Springer Science & Business Media. This book was released on 2013-03-07 with total page 441 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and the use of active devices for materials evaluation is shown in detail.
Book Synopsis Molecular-Beam Epitaxial Growth and Device Potential of Polar/Nonpolar Semiconductor Heterostructures by : H. Kroemer
Download or read book Molecular-Beam Epitaxial Growth and Device Potential of Polar/Nonpolar Semiconductor Heterostructures written by H. Kroemer and published by . This book was released on 1985 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt: Techniques for the molecular beam epitaxial growth of GaP and GaAs substrates were developed. The techniques rely on the total in-situ removal of all oxygen from the Si surface, to create an atomically clean Si starting surface, coupled with the use of the unusual and previously not used crystallographic (211) orientation for the Si substrate. In the case fo GaP growth a third essential ingredient was the use of pure P2 vapor, generated by the high-temperature decomposition of GaP, rather than the P4 vapor generated by the evaporation of elemental phosphorus. The central problem of obtaining device-quality growth of GaAs and GaP was found to be the problem of avoiding antiphase domains (APDs) in the growing film, that is, of random domains containing opposite assignments of the lattice positions to the Ga and P atoms. On the commonly used crystallographic (100) orientation, APDs are fundamentally unavoidable. The (211) orientation was recognized to have a bond configuration at the interface such that APDs should not form. Experimental (211) growths yielded layers of high quality that were demonstrably free of APDs, as predicted. The recognition of the (211) orientation as the canonical orientation for the growth of polar compound semiconductors on non-polar elemental semiconductor substrates was a completely unexpected result of this research, and perhaps the most far-reaching one.
Book Synopsis Molecular Beam Epitaxy Growth and Characterization of ZnO-based Layers and Heterostructures by : Abdelhamid Abdelrehim Mahmoud Elshaer
Download or read book Molecular Beam Epitaxy Growth and Characterization of ZnO-based Layers and Heterostructures written by Abdelhamid Abdelrehim Mahmoud Elshaer and published by Cuvillier Verlag. This book was released on 2008 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Molecular Beam Epitaxy by : E. Kasper
Download or read book Silicon Molecular Beam Epitaxy written by E. Kasper and published by CRC Press. This book was released on 2018-05-04 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Book Synopsis Molecular Beam Epitaxy by : Robin F.C. Farrow
Download or read book Molecular Beam Epitaxy written by Robin F.C. Farrow and published by Elsevier. This book was released on 1995-12-31 with total page 795 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.
Book Synopsis Molecular Beam Epitaxy of Sb-based Semiconductors by :
Download or read book Molecular Beam Epitaxy of Sb-based Semiconductors written by and published by . This book was released on 1998 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The growth of semiconductor antimonides by molecular beam epitaxy (MBE) was first reported in the late 1970's. In recent years, the emergence of several potential device applications has resulted in increased activity in the field. Much of the work focuses on GaSb and AlSb because they are nearly lattice-matched to each other and to InAs (a sub o, AlSb=6.1355 A, a sub o, GaSb=6.0954 A, a sub, InAs=6.0584 A). These semiconductors are often referred to as the "6.1 A family." Ternaries such as In(x)Ga(1-x)Sb, AlAs(x)Sb(1-x), and GaAs(x)Sb(1-x) also have lattice constants close to 6.1 A if x is small. The interest in 6.1 A materials is based upon the wide range of available band alignments and band gaps. These are illustrated in Fig. 10.1. For example, InAs is a small band gap semiconductor (Eg,300K=0.36 eV) with a small electron effective mass (m sub e=0.023m sub o) and large room-temperature mobility (30,000 sq cm/V-s). Hence, it is a candidate for the channel material in high-speed field-effect transistors (FETs). AlSb is an indirect-gap semiconductor with a large band gap (1.63 eV). The conduction band offset between AlSb and InAs is 1.35 eV, making AlSb a potential barrier material for FETs. A second example is InAs/GaSb. The band alignment is type-II, with the GaSb valence band lying above the InAs conduction band. Short-period superlattices formed with InAs and GaSb have small, tunable energy gaps and high absorption coefficients. Hence, they are candidates for long-wavelength infrared detectors.
Download or read book Epitaxial Microstructures written by and published by Academic Press. This book was released on 1994-09-15 with total page 457 pages. Available in PDF, EPUB and Kindle. Book excerpt: Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures. Atomic-level control of semiconductor microstructures Molecular beam epitaxy, metal-organic chemical vapor deposition Quantum wells and quantum wires Lasers, photon(IR)detectors, heterostructure transistors
Book Synopsis Growth of Strained III-V Semiconductors by Molecular Beam Epitaxy by : Michael Ekenstedt
Download or read book Growth of Strained III-V Semiconductors by Molecular Beam Epitaxy written by Michael Ekenstedt and published by . This book was released on 1993 with total page 63 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxial Growth of III-V Semiconductor Nanostructures on Silicon Substrates by : Tariq Al Zoubi
Download or read book Molecular Beam Epitaxial Growth of III-V Semiconductor Nanostructures on Silicon Substrates written by Tariq Al Zoubi and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Investigations of the Molecular Beam Epitaxial Growth and Characteristics of External Excitation Induced Non-Equilibrium Phases of Immiscible III-V Compound Semiconductors by : A. Madhukar
Download or read book Investigations of the Molecular Beam Epitaxial Growth and Characteristics of External Excitation Induced Non-Equilibrium Phases of Immiscible III-V Compound Semiconductors written by A. Madhukar and published by . This book was released on 1985 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt: This program undertakes experimental and theoretical investigation of the role of growth kinetics and mechanism(s) in molecular beam epitaxial growth of III-V semiconductors and its possible control via laser excitation to effect metastable structures and phases. The experimental work on laser induced MBE growth is collaboratively carried out. Specifically, progress is reported on (i) Monte-Carlo computer simulations of MBE growth and predictions of the dynamics of reflection-high-energy-electron-diffraction (RHEED) intensities (ii) a theory of laser--induced-desorption (iii) Experimental studies of the RHEED intensity dynamics for GaAs/InxGa1-xAs(100) MBE growth (iv) the first realization of GaAs/InAs strained layer structures (with 7.4% lattice mismatch) and transmission electron microscopy studies showing high quality interfaces, and (v) establishment of a facility for magneto-absorption studies.
