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Modulation Doped Field Effect Transistors In Strained Layer Superlattices
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Book Synopsis Modulation Doped Field-Effect Transistors in Strained Layer Superlattices by : S. M. Bedair
Download or read book Modulation Doped Field-Effect Transistors in Strained Layer Superlattices written by S. M. Bedair and published by . This book was released on 1986 with total page 33 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the mm-wave device investigation the limitations imposed by parasitic elements upon high-frequency performance were investigated. It was determined that the high field domain that forms in the channel of field-effect type transistors presents a limitation to high frequency operation. The domain capacitance creates a complex pole in the unilateral gain that results in a 12 db/octave roll-off above the resonant frequency of the pole. The various factors that effect this pole have been investigated. Current FETs are limited to upper operation frequencies of about 150-160 GHz. The GaAs(1-y)P(y)-Ga(1-yInx)As material system is proposed for potential HEMT applications. This structure is made of strained layers that can be grown with y = 2x free from dislocations, and lattice matched to a GaAs substrate. HEMT devices fabricated in such structure have several potential advantages over the conventional AlGaAs-GaAs HEMT. First, the active layer is Ga(1-x)In(x)As instead of GaAs. Thus, the potential exists for higher room temperature mobilities with larger saturation velocities and a larger conduction band edge discontinuity. An advantage over the Ga(0.47)In(0.53)As-InP system is that the composition of the Ga(1-x)In(x)As in the proposed structure can be varied to optimize the HEMT performance, whereas the Ga(0.47)In(0.53)As has a fairly low bandgap for optimum FET devices.
Book Synopsis Materials Science and Technology: Strained-Layer Superlattices by :
Download or read book Materials Science and Technology: Strained-Layer Superlattices written by and published by Academic Press. This book was released on 1991-02-20 with total page 443 pages. Available in PDF, EPUB and Kindle. Book excerpt: The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this volume offers a comprehensive discussion of strained-layer superlattices and focuses on fabrication technology and applications of the material. This volume combines with Volume 32, Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.****The following previously approved blurb is to be used in all other direct mail and advertising as both volumes will be promoted together.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this two-volume survey offers a comprehensive discussion of the physics of strained-layer superlattices (Volume 32), as well as detailing fabrication technology and applications of the material (Volume 33). Although each volume is edited to stand alone, the two books combine to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.
Book Synopsis Modulation-doped Field-effect Transistors by : Heinrich Daembkes
Download or read book Modulation-doped Field-effect Transistors written by Heinrich Daembkes and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1991 with total page 544 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Modulation Doped Field Effect Transistors for Microwave Device Applications by : Norman C. Tien
Download or read book Modulation Doped Field Effect Transistors for Microwave Device Applications written by Norman C. Tien and published by . This book was released on 1993 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Modulation-doped Field-effect Transistors for Low Distortion Microwave Mixing Applications by : Eric W. Lin
Download or read book Modulation-doped Field-effect Transistors for Low Distortion Microwave Mixing Applications written by Eric W. Lin and published by . This book was released on 1994 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Compound Semiconductor Strained-layer Superlattices by : Robert M. Biefeld
Download or read book Compound Semiconductor Strained-layer Superlattices written by Robert M. Biefeld and published by . This book was released on 1989 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: Coverage includes: ion implantation; semiconductor characterization; and gallium arsenide.
Download or read book Research in Progress written by and published by . This book was released on 1984 with total page 604 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Double-doped Double-strained Modulation Doped Field Effect Transistor 3D-SMODFET by : Glenn Harvey Martin
Download or read book Double-doped Double-strained Modulation Doped Field Effect Transistor 3D-SMODFET written by Glenn Harvey Martin and published by . This book was released on 1997 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Parameter Extraction and Complex Nonlinear Transistor Models by : Gunter Kompa
Download or read book Parameter Extraction and Complex Nonlinear Transistor Models written by Gunter Kompa and published by Artech House. This book was released on 2019-12-31 with total page 610 pages. Available in PDF, EPUB and Kindle. Book excerpt: All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.
Book Synopsis Characterization of Modulation-doped Field-effect Transistors with Gate Lengths Down to 600 Angstroms by : Paul Raymond De la Houssaye
Download or read book Characterization of Modulation-doped Field-effect Transistors with Gate Lengths Down to 600 Angstroms written by Paul Raymond De la Houssaye and published by . This book was released on 1988 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Heteroepitaxy of Semiconductors by : John E. Ayers
Download or read book Heteroepitaxy of Semiconductors written by John E. Ayers and published by CRC Press. This book was released on 2016-10-03 with total page 794 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 804 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Book Synopsis Concise Encyclopedia of Semiconducting Materials & Related Technologies by : S. Mahajan
Download or read book Concise Encyclopedia of Semiconducting Materials & Related Technologies written by S. Mahajan and published by Elsevier. This book was released on 2013-10-22 with total page 607 pages. Available in PDF, EPUB and Kindle. Book excerpt: The development of electronic materials and particularly advances in semiconductor technology have played a central role in the electronics revolution by allowing the production of increasingly cheap and powerful computing equipment and advanced telecommunications devices. This Concise Encyclopedia, which incorporates relevant articles from the acclaimed Encyclopedia of Materials Science and Engineering as well as newly commissioned articles, emphasizes the materials aspects of semiconductors and the technologies important in solid-state electronics. Growth of bulk crystals and epitaxial layers are discussed in the volume and coverage is included of defects and their effects on device behavior. Metallization and passivation issues are also covered. Over 100 alphabetically arranged articles, written by world experts in the field, are each intended to serve as the first source of information on a particular aspect of electronic materials. The volume is extensively illustrated with photographs, diagrams and tables. A bibliography is provided at the end of each article to guide the reader to recent literature. A comprehensive system of cross-references, a three-level subject index and an alphabetical list of articles are included to aid readers in the abstraction of information.
Book Synopsis Modulation-doped Field-effect Transistors by : Heinrich Daembkes
Download or read book Modulation-doped Field-effect Transistors written by Heinrich Daembkes and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1991 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nanomaterials written by A.S Edelstein and published by CRC Press. This book was released on 1998-01-01 with total page 619 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanomaterials: Synthesis, Properties and Applications provides a comprehensive introduction to nanomaterials, from how to make them to example properties, processing techniques, and applications. Contributions by leading international researchers and teachers in academic, government, and industrial institutions in nanomaterials provide an accessibl
Book Synopsis Silicon-Molecular Beam Epitaxy by : E. Kasper
Download or read book Silicon-Molecular Beam Epitaxy written by E. Kasper and published by CRC Press. This book was released on 2018-05-04 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Book Synopsis Measurement and Modeling of Silicon Heterostructure Devices by : John D. Cressler
Download or read book Measurement and Modeling of Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 189 pages. Available in PDF, EPUB and Kindle. Book excerpt: When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.
