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Author : Yeou-Song Lee
Publisher :
ISBN 13 :
Total Pages : 318 pages
Book Rating : 4.:/5 (826 download)
Download or read book Metal-semiconductor Contacts and Electrically-active Defects in N-type InP written by Yeou-Song Lee and published by . This book was released on 1990 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 46 pages
Book Rating : 4.:/5 (227 download)
Download or read book A Study of Metal-Semiconductor Contacts on Indium Phosphide written by and published by . This book was released on 1981 with total page 46 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report describes the research accomplished during the last twelve months of a 20-month program of research on metal contacts to the semiconductor indium phosphide (InP). The Schottky barrier energy phi sub B and the contact resistance r(c) were measured for several metal-InP structures and the electrical properties were correlated to the metallurgical properties obtained with Auger electron spectroscopy (AES). Separate measurement of phi sub B on both n-type and p-type InP was carried out using Al as the metal Electrode. Control samples of Al/GaAs and Al/Si diodes were fabricated simultaneously in order to evaluate fabrication procedures. The Al/InP diodes were rectifying and phi sub B(n) less than phi sub B(p), in agreement with our earlier work on Pd/InP diodes. Ohmic contacts to p-type InP were also investigated. The results of a study of a multilayered metal film consisting of Au and Be alloyed to the InP surface, are given. In was found that the Au/Be/p-InP structure when properly heat treated would produce ohmic behavior with r(c) = 0.001 ohm sq cm at a net doping of about 1.0 x 10 to the 17th power per cu cm and r(c) = 0.0002 ohm sq cm at 1.4 x 10 to the 18th power per cu cm. The Au/Be contact was relatively easy to apply but tight control over the Au/Be thickness ratio and heat-treatment cycle was found to be necessary. (Author).
Author : M.O. Manasreh
Publisher : Elsevier
ISBN 13 : 0080534449
Total Pages : 463 pages
Book Rating : 4.0/5 (85 download)
Download or read book III-Nitride Semiconductors written by M.O. Manasreh and published by Elsevier. This book was released on 2000-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Author : Ender Hökelek
Publisher :
ISBN 13 :
Total Pages : 326 pages
Book Rating : 4.:/5 (319 download)
Download or read book A Study of Schottky Contacts on Indium Phosphide written by Ender Hökelek and published by . This book was released on 1982 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Winfried Mönch
Publisher : Springer Science & Business Media
ISBN 13 : 9400906579
Total Pages : 302 pages
Book Rating : 4.4/5 (9 download)
Download or read book Electronic Structure of Metal-Semiconductor Contacts written by Winfried Mönch and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt: Interface and surface science have been important in the development of semicon ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor insulator interfaces, heterojunctions between distinct semiconductors, and metal semiconductor contacts. The latter ones stood almost at the very beginning of semi conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts were first described by Braun in 1874. A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time. A prerequisite was Wilson's quantum theory of electronic semi-conductors which he published in 1931. A few years later, in 1938, Schottky finally explained the rectification at metal-semiconductor contacts by a space-
Author : Vallivedu Janardhanam
Publisher : LAP Lambert Academic Publishing
ISBN 13 : 9783844301281
Total Pages : 144 pages
Book Rating : 4.3/5 (12 download)
Download or read book Studies of Schottky Contacts on Indium Phosphide written by Vallivedu Janardhanam and published by LAP Lambert Academic Publishing. This book was released on 2011-01 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal-semiconductor contacts are one of the most widely used rectifying contacts in semiconductor industry. Therefore, the fabrication of high quality Schottky contacts is essential to improve the performance of the device. InP is a material of particular interest for optoelectronic and high-speed electronic devices. In view of the important applications, the fabrication of Schottky contacts to InP is of vital importance. The contacts formed should have electrical and thermal stability with desired surface morphology. During the technological stages leading to the final device, InP substrates unavoidably undergo many thermal treatments involving rapid thermal annealing. This book includes the fabrication and characterization of Schottky contacts to InP formed with high temperature stable metals like ruthenium and molybdenum. The Schottky structures formed on InP are rapid thermal annealed and its effect on the electrical, structural properties and deep level defects are investigated. The results presnted in the book will be useful for those working in the field of semiconductor Schottky contact fabrication.
Author : Leonard J. Brillson
Publisher : John Wiley & Sons
ISBN 13 : 3527409157
Total Pages : 589 pages
Book Rating : 4.5/5 (274 download)
Download or read book Surfaces and Interfaces of Electronic Materials written by Leonard J. Brillson and published by John Wiley & Sons. This book was released on 2010-04-26 with total page 589 pages. Available in PDF, EPUB and Kindle. Book excerpt: An advanced level textbook covering geometric, chemical, and electronic structure of electronic materials, and their applications to devices based on semiconductor surfaces, metal-semiconductor interfaces, and semiconductor heterojunctions. Starting with the fundamentals of electrical measurements on semiconductor interfaces, it then describes the importance of controlling macroscopic electrical properties by atomic-scale techniques. Subsequent chapters present the wide range of surface and interface techniques available to characterize electronic, optical, chemical, and structural properties of electronic materials, including semiconductors, insulators, nanostructures, and organics. The essential physics and chemistry underlying each technique is described in sufficient depth with references to the most authoritative sources for more exhaustive discussions, while numerous examples are provided throughout to illustrate the applications of each technique. With its general reading lists, extensive citations to the text, and problem sets appended to all chapters, this is ideal for students of electrical engineering, physics and materials science. It equally serves as a reference for physicists, material science and electrical and electronic engineers involved in surface and interface science, semiconductor processing, and device modeling and design. This is a coproduction of Wiley and IEEE * Free solutions manual available for lecturers at www.wiley-vch.de/supplements/
Author : G. Y. Robinson
Publisher :
ISBN 13 :
Total Pages : 47 pages
Book Rating : 4.:/5 (227 download)
Download or read book A Study of Metal Semiconductor Contacts on Indium Phosphide written by G. Y. Robinson and published by . This book was released on 1979 with total page 47 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report describes the research accomplished during a 14-month program of research on metal-semiconductor contacts on indium phosphide. Emphasis was placed on fabrication and characterization of ohmic contacts to p- and n-type InP using the deposition of thin metallic layers and subsequent heat treatment at elevated temperatures. Extensive use of Auger electron spectroscopy (AES) was made in order to obtain depth-composition profiles of the thin-film structures. For contact to n-type InP, three thin-film systems were investigated: Au, Ni, and a composite layer of Ni/Au/Ge. The specific contact resistance (r sub c) of the Ni/Au/Ge/In system varied in a systematic manner with heat-treatment temperature, and a minimum value of r sub c of .00003 ohm-sq cm at 325 C was found for N(D) = 3 x 10 to the 16th power/cc. Several nickel germanide phases, detected by AES and X-ray diffraction, were formed during heat treatment and were found to affect r sub c. For contact to p-type InP, a film consisting of Au/Mg was investigated. For heat treatment of the Au/Mg/InP system above 350 C, r sub c decreased with increasing signs of alloying at higher temperatures. The smoothest surface was obtained at 446 C for 50 minutes with r sub c approx. 0.0001 ohm/sq cm for N(A) = 6 x 10 to the 17th power/cc.
Author :
Publisher :
ISBN 13 :
Total Pages : 760 pages
Book Rating : 4.3/5 (91 download)
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1989 with total page 760 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
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ISBN 13 :
Total Pages : 710 pages
Book Rating : 4.E/5 ( download)
Download or read book Diffusion and Defect Data written by and published by . This book was released on 1996 with total page 710 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : James P. Doyle
Publisher :
ISBN 13 :
Total Pages : 70 pages
Book Rating : 4.:/5 (186 download)
Download or read book Copper Germanide Schottky Contacts to Silicon and Electrically Active Defects in N-type 6H-SiC and 4H-SiC Epitaxial Layers written by James P. Doyle and published by . This book was released on 1997 with total page 70 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : S. J. Pearton
Publisher : Cambridge University Press
ISBN 13 : 0080946755
Total Pages : 593 pages
Book Rating : 4.0/5 (89 download)
Download or read book Processing of 'Wide Band Gap Semiconductors written by S. J. Pearton and published by Cambridge University Press. This book was released on 2013-01-15 with total page 593 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond, and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps, which give them a huge advantage over the indirect gap Sic As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high brightness (15 lumens per watt), long-life white LEDs are under development with the potential to replace incandescent bulbs in many situations. This book provides readers with a broad overview of this rapidly expanding technology, bringing them up to speed on new discoveries and commercial applications. It provides specific technical applications of key processes such as laser diodes, LEDs, and very high temperature electronic controls on engines, focusing on doping, etching, oxidation passivation, growth techniques and more.
Author :
Publisher :
ISBN 13 :
Total Pages : 444 pages
Book Rating : 4.3/5 (91 download)
Download or read book Soviet Physics written by and published by . This book was released on 1989 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Robert S. Bauer
Publisher :
ISBN 13 :
Total Pages : 396 pages
Book Rating : 4.:/5 (318 download)
Download or read book Proceedings of the Ninth Annual Conference on the Physics and Chemistry of Semiconductor Interfaces written by Robert S. Bauer and published by . This book was released on 1982 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Milton Ohring
Publisher : Elsevier
ISBN 13 : 0080516076
Total Pages : 715 pages
Book Rating : 4.0/5 (85 download)
Download or read book Reliability and Failure of Electronic Materials and Devices written by Milton Ohring and published by Elsevier. This book was released on 1998-06-12 with total page 715 pages. Available in PDF, EPUB and Kindle. Book excerpt: Suitable as a reference work for reliability professionals or as a text for advanced undergraduate or graduate students, this book introduces the reader to the widely dispersed reliability literature of microelectronic and electronic-optional devices. Reliability and Failure of Electronic Materials and Devices integrates a treatment of chip and packaging level failures within the context of the atomic mechanisms and models used to explain degradation, and the statistical handling of lifetime data. Electromigration, dielectric radiation damage and the mechanical failure of contacts and solder joints are among the failure mechanisms considered. An underlying thread of the book concerns product defects--their relation to yield and reliability, the role they play in failure, and the way they are experimentally exposed. The reader will gain a deeper physical understanding of failure mechanisms in electronic materials and devices, acquire skills in the mathematical handling of reliability data, and better appreciate future technology trends and the reliability issues they raise. Discusses reliability and failure on both the chip and packaging levels Handles the role of defects in yield and reliability Includes a tutorial chapter on the mathematics of reliability Focuses on electromigration, dielectric breakdown, hot-electron effects, electrostatic discharge, corrosion, radiation damage and the mechanical failure of packages, contacts, and solder joints Considers defect detection methods and failure analysis techniques
Author :
Publisher :
ISBN 13 :
Total Pages : 500 pages
Book Rating : 4.3/5 (91 download)
Download or read book Ceramic Abstracts written by and published by . This book was released on 2000 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 1118 pages
Book Rating : 4.3/5 (91 download)
Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1118 pages. Available in PDF, EPUB and Kindle. Book excerpt:
