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Le Transistor Bipolaire A Heterojonction Ingaas
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Book Synopsis LE TRANSISTOR BIPOLAIRE A HETEROJONCTION INGAAS by : Jean-Luc Pelouard
Download or read book LE TRANSISTOR BIPOLAIRE A HETEROJONCTION INGAAS written by Jean-Luc Pelouard and published by . This book was released on 1987 with total page 209 pages. Available in PDF, EPUB and Kindle. Book excerpt: SIMULATION DES PHENOMENES DE TRANSPORT. REALISATION DE TRANSISTORS BIPOLAIRES A HETEROJONCTION INGAALAS-INGAAS-INGAALAS EN TECHNOLOGIE DOUBLE MESA ET TECHNOLOGIE DIFFUSEE A PARTIR DE COUCHES OBTENUES PAR EPITAXIE PAR JETS MOLECULAIRES
Book Synopsis Transistor bipolaire à double hétérojonction submicronique InP/InGaAs pour circuits numériques ou mixtes ultra-rapides by : Virginie Nodjiadjim
Download or read book Transistor bipolaire à double hétérojonction submicronique InP/InGaAs pour circuits numériques ou mixtes ultra-rapides written by Virginie Nodjiadjim and published by . This book was released on 2009 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt: Cette thèse présente l'optimisation des performances du transistor bipolaire à double hétérojonction (TBDH) InP/InGaAs aux dimensions submicroniques. Tout d'abord nous présenterons le développement d'un modèle analytique tenant compte des spécificités du dessin et de la technologie de ce composant. Ce modèle, qui sera confronté aux résultats de mesures de paramètre S, servira à déterminer les dimensions optimales permettant d'atteindre des fréquences de coupure élevées et de mettre en évidence les principaux axes d'optimisation des performances. Puis nous étudierons plusieurs structures de couche pour la transition base collecteur visant à améliorer les propriétés de transport du TBH et repousser la densité de courant au seuil d'effet Kirk en vue d'augmenter les performances fréquentielles maximales du composant. Enfin, étant donné que les TBH fonctionnent à des densités de courant pouvant dépasser 800 kA/cm2, ceux-ci sont sujets à un auto-échauffement qui contribue à la dégradation de leurs performances fréquentielles et à un vieillissement prématuré. Nous nous intéresserons donc à l'influence de la température sur les performances et présenterons les solutions apportées pour réduire l'auto-échauffement et améliorer la fiabilité des TBH. Ce travail a permis de valider une filière de TBH possédant des fréquences de coupure fT et fmax comprises dans la gamme 250-300 GHz ainsi qu'une tension de claquage de l'ordre de 5 V. Ainsi, ces composants ont pu être utilisés pour la réalisation de circuits destinés aux transmissions à 100 Gbit/s.
Download or read book Physics Briefs written by and published by . This book was released on 1988 with total page 918 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Influence of Temperature on Microelectronics and System Reliability by : Pradeep Lall
Download or read book Influence of Temperature on Microelectronics and System Reliability written by Pradeep Lall and published by CRC Press. This book was released on 2020-07-09 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book raises the level of understanding of thermal design criteria. It provides the design team with sufficient knowledge to help them evaluate device architecture trade-offs and the effects of operating temperatures. The author provides readers a sound scientific basis for system operation at realistic steady state temperatures without reliability penalties. Higher temperature performance than is commonly recommended is shown to be cost effective in production for life cycle costs. The microelectronic package considered in the book is assumed to consist of a semiconductor device with first-level interconnects that may be wirebonds, flip-chip, or tape automated bonds; die attach; substrate; substrate attach; case; lid; lid seal; and lead seal. The temperature effects on electrical parameters of both bipolar and MOSFET devices are discussed, and models quantifying the temperature effects on package elements are identified. Temperature-related models have been used to derive derating criteria for determining the maximum and minimum allowable temperature stresses for a given microelectronic package architecture. The first chapter outlines problems with some of the current modeling strategies. The next two chapters present microelectronic device failure mechanisms in terms of their dependence on steady state temperature, temperature cycle, temperature gradient, and rate of change of temperature at the chip and package level. Physics-of-failure based models used to characterize these failure mechanisms are identified and the variabilities in temperature dependence of each of the failure mechanisms are characterized. Chapters 4 and 5 describe the effects of temperature on the performance characteristics of MOS and bipolar devices. Chapter 6 discusses using high-temperature stress screens, including burn-in, for high-reliability applications. The burn-in conditions used by some manufacturers are examined and a physics-of-failure approach is described. The
Book Synopsis Silicon Photonics by : Lorenzo Pavesi
Download or read book Silicon Photonics written by Lorenzo Pavesi and published by Springer Science & Business Media. This book was released on 2004-03-04 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives a fascinating picture of the state-of-the-art in silicon photonics and a perspective on what can be expected in the near future. It is composed of a selected number of reviews authored by world leaders in the field and is written from both academic and industrial viewpoints. An in-depth discussion of the route towards fully integrated silicon photonics is presented. This book will be useful not only to physicists, chemists, materials scientists, and engineers but also to graduate students who are interested in the fields of microphotonics and optoelectronics.
Book Synopsis Integrated Optics: Theory and Technology by : Robert G. Hunsperger
Download or read book Integrated Optics: Theory and Technology written by Robert G. Hunsperger and published by Springer. This book was released on 2013-11-11 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: Our intent in producing this book was to provide a text that would be comprehensive enough for an introductory course in integrated optics, yet concise enough in its mathematical derivations to be easily readable by a practicing engineer who desires an overview of the field. The response to the first edition has indeed been gratifying; unusually strong demand has caused it to be sold out during the initial year of publication, thus providing us with an early opportunity to produce this updated and improved second edition. This development is fortunate, because integrated optics is a very rapidly progressing field, with significant new research being regularly reported. Hence, a new chapter (Chap. 17) has been added to review recent progress and to provide numerous additional references to the relevant technical literature. Also, thirty-five new problems for practice have been included to supplement those at the ends of chapters in the first edition. Chapters I through 16 are essentially unchanged, except for brief updating revisions and corrections of typographical errors. Because of the time limitations imposed by the need to provide an uninterrupted supply of this book to those using it as a course text, it has been possible to include new references and to briefly describe recent developments only in Chapter 17. However, we hope to provide details of this continuing progress in a future edition.
Book Synopsis An Introduction to Optics in Computers by : Henri H. Arsenault
Download or read book An Introduction to Optics in Computers written by Henri H. Arsenault and published by SPIE Press. This book was released on 1992 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume surveys the entire field of optical computing. The emphasis is on breadth of coverage. The book is descriptive, the authors minimize the use of mathematics, and it is therefore most suitable for those who require an overall view of what is going on in this field. A detailed comparison is given of the capabilities of electronics and optics, and the degree to which these capabilities have been achieved is indicated. Other areas of focus include optical computing architectures, components and technologies, optical interconnects, and optical neural nets. Approximately 300 references to key works in the field are included.
Book Synopsis Integrated Photonics by : Ginés Lifante
Download or read book Integrated Photonics written by Ginés Lifante and published by Information Gatekeepers Inc. This book was released on 2003 with total page 50 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electronic Structure and Optical Properties of Semiconductors by : Marvin L. Cohen
Download or read book Electronic Structure and Optical Properties of Semiconductors written by Marvin L. Cohen and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fundamentals of Optical Waveguides by : Katsunari Okamoto
Download or read book Fundamentals of Optical Waveguides written by Katsunari Okamoto and published by Elsevier. This book was released on 2010-08-04 with total page 578 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of Optical Waveguides is an essential resource for any researcher, professional or student involved in optics and communications engineering. Any reader interested in designing or actively working with optical devices must have a firm grasp of the principles of lightwave propagation. Katsunari Okamoto has presented this difficult technology clearly and concisely with several illustrations and equations. Optical theory encompassed in this reference includes coupled mode theory, nonlinear optical effects, finite element method, beam propagation method, staircase concatenation method, along with several central theorems and formulas. Since the publication of the well-received first edition of this book, planar lightwave circuits and photonic crystal fibers have fully matured. With this second edition the advances of these fibers along with other improvements on existing optical technologies are completely detailed. This comprehensive volume enables readers to fully analyze, design and simulate optical atmospheres. Exceptional new chapter on Arrayed-Waveguide Grating (AWG) In-depth discussion of Photonic Crystal Fibers (PCFs) Thorough explanation of Multimode Interference Devices (MMI) Full coverage of polarization Mode Dispersion (PMD)
Book Synopsis Strained Ge and GeSn Band Engineering for Si Photonic Integrated Circuits by : Yijie Huo
Download or read book Strained Ge and GeSn Band Engineering for Si Photonic Integrated Circuits written by Yijie Huo and published by Stanford University. This book was released on 2010 with total page 139 pages. Available in PDF, EPUB and Kindle. Book excerpt: The on-chip interconnect bandwidth limitation is becoming an increasingly critical challenge for integrated circuits (ICs) as device scaling continues to push the speed and density of ICs. Silicon photonics has the ability to solve this emerging problem due to its high speed, high bandwidth, low power consumption, and ability to be monolithically integrated on silicon. Most of the key devices for Si photonic ICs have already been demonstrated. However, a practical CMOS compatible coherent light source is still a major challenge. Germanium (Ge) has already been demonstrated to be a promising material for optoelectronic devices, such as photo-detectors and modulators. However, Ge is an indirect band gap semiconductor, which makes Ge-based light sources very inefficient and limits their practical use. Fortunately, the direct [uppercase Gamma] valley of the Ge conduction band is only 0.14 eV higher than the indirect L valley, suggesting that with band-structure engineering, Ge has the potential to become a direct band gap material and an efficient light emitter. In this dissertation, we first discuss our work on highly biaxial tensile strained Ge grown by molecular beam epitaxy (MBE). Relaxed step-graded InGaAs buffer layers, which are prepared with low temperature growth and high temperature annealing, are used to provide a larger lattice constant substrate to produce tensile strain in Ge epitaxial layers. Up to 2.3% in-plane biaxial tensile strained thin Ge epitaxial layers were achieved with smooth surfaces and low threading dislocation density. A strong increase of photoluminescence with highly tensile strained Ge layers at low temperature suggests that a direct band gap semiconductor has been achieved. This dissertation also presents our work on more than 9% Sn incorporation in epitaxial GeSn alloys using a low temperature MBE growth method. This amount of Sn is 10 times greater than the solid-solubility of Sn in crystalline Ge. Material characterization shows good crystalline quality without Sn precipitation or phase segregation. With increasing Sn percentage, direct band gap narrowing is observed by optical transmission measurements. The studies described in this dissertation will help enable efficient germanium based CMOS compatible coherent light sources. Other possible applications of this work are also discussed in the concluding chapter.
Book Synopsis Band Theory and Electronic Properties of Solids by : John Singleton
Download or read book Band Theory and Electronic Properties of Solids written by John Singleton and published by OUP Oxford. This book was released on 2001-08-30 with total page 239 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an introduction to band theory and the electronic properties of materials at a level suitable for final-year undergraduates or first-year graduate students. It sets out to provide the vocabulary and quantum-mechanical training necessary to understand the electronic, optical and structural properties of the materials met in science and technology and describes some of the experimental techniques which are used to study band structure today. In order to leave space for recent developments, the Drude model and the introduction of quantum statistics are treated synoptically. However, Bloch's theorem and two tractable limits, a very weak periodic potential and the tight-binding model, are developed rigorously and in three dimensions. Having introduced the ideas of bands, effective masses and holes, semiconductor and metals are treated in some detail, along with the newer ideas of artificial structures such as super-lattices and quantum wells, layered organic substances and oxides. Some recent `hot topics' in research are covered, e.g. the fractional Quantum Hall Effect and nano-devices, which can be understood using the techniques developed in the book. In illustrating examples of e.g. the de Haas-van Alphen effect, the book focuses on recent experimental data, showing that the field is a vibrant and exciting one. References to many recent review articles are provided, so that the student can conduct research into a chosen topic at a deeper level. Several appendices treating topics such as phonons and crystal structure make the book self-contained introduction to the fundamentals of band theory and electronic properties in condensed matter physic today.
