Latchup in CMOS Technology

Download Latchup in CMOS Technology PDF Online Free

Author :
Publisher : Springer Science & Business Media
ISBN 13 : 147571887X
Total Pages : 255 pages
Book Rating : 4.4/5 (757 download)

DOWNLOAD NOW!


Book Synopsis Latchup in CMOS Technology by : R.R. Troutman

Download or read book Latchup in CMOS Technology written by R.R. Troutman and published by Springer Science & Business Media. This book was released on 2013-03-14 with total page 255 pages. Available in PDF, EPUB and Kindle. Book excerpt: Why a book on Iatchup? Latchup has been, and continues to be, a potentially serious CMOS reliability concern. This concern is becoming more widespread with the ascendency of CMOS as the dominant VLSI technology, particularly as parasitic bipolar characteristics continue to improve at ever smaller dimensions on silicon wafers with ever lower defect densities. Although many successful parts have been marketed, latchup solutions have often been ad hoc. Although latchup avoidance techniques have been previously itemized, there has been little quantitative evaluation of prior latchup fixes. What is needed is a more general, more systematic treatment of the latchup problem. Because of the wide variety of CMOS technologies and the long term interest in latchup, some overall guiding principles are needed. Appreciating the variety of possible triggering mechanisms is key to a real understanding of latchup. This work reviews the origin of each and its effect on the parasitic structure. Each triggering mechanism is classified according to a new taxonomy.

Transient-Induced Latchup in CMOS Integrated Circuits

Download Transient-Induced Latchup in CMOS Integrated Circuits PDF Online Free

Author :
Publisher : John Wiley & Sons
ISBN 13 : 0470824085
Total Pages : 265 pages
Book Rating : 4.4/5 (78 download)

DOWNLOAD NOW!


Book Synopsis Transient-Induced Latchup in CMOS Integrated Circuits by : Ming-Dou Ker

Download or read book Transient-Induced Latchup in CMOS Integrated Circuits written by Ming-Dou Ker and published by John Wiley & Sons. This book was released on 2009-07-23 with total page 265 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book all semiconductor device engineers must read to gain a practical feel for latchup-induced failure to produce lower-cost and higher-density chips. Transient-Induced Latchup in CMOS Integrated Circuits equips the practicing engineer with all the tools needed to address this regularly occurring problem while becoming more proficient at IC layout. Ker and Hsu introduce the phenomenon and basic physical mechanism of latchup, explaining the critical issues that have resurfaced for CMOS technologies. Once readers can gain an understanding of the standard practices for TLU, Ker and Hsu discuss the physical mechanism of TLU under a system-level ESD test, while introducing an efficient component-level TLU measurement setup. The authors then present experimental methodologies to extract safe and area-efficient compact layout rules for latchup prevention, including layout rules for I/O cells, internal circuits, and between I/O and internal circuits. The book concludes with an appendix giving a practical example of extracting layout rules and guidelines for latchup prevention in a 0.18-micrometer 1.8V/3.3V silicided CMOS process. Presents real cases and solutions that occur in commercial CMOS IC chips Equips engineers with the skills to conserve chip layout area and decrease time-to-market Written by experts with real-world experience in circuit design and failure analysis Distilled from numerous courses taught by the authors in IC design houses worldwide The only book to introduce TLU under system-level ESD and EFT tests This book is essential for practicing engineers involved in IC design, IC design management, system and application design, reliability, and failure analysis. Undergraduate and postgraduate students, specializing in CMOS circuit design and layout, will find this book to be a valuable introduction to real-world industry problems and a key reference during the course of their careers.

Latchup

Download Latchup PDF Online Free

Author :
Publisher : John Wiley & Sons
ISBN 13 : 9780470516164
Total Pages : 472 pages
Book Rating : 4.5/5 (161 download)

DOWNLOAD NOW!


Book Synopsis Latchup by : Steven H. Voldman

Download or read book Latchup written by Steven H. Voldman and published by John Wiley & Sons. This book was released on 2008-04-15 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Interest in latchup is being renewed with the evolution of complimentary metal-oxide semiconductor (CMOS) technology, metal-oxide-semiconductor field-effect transistor (MOSFET) scaling, and high-level system-on-chip (SOC) integration. Clear methodologies that grant protection from latchup, with insight into the physics, technology and circuit issues involved, are in increasing demand. This book describes CMOS and BiCMOS semiconductor technology and their sensitivity to present day latchup phenomena, from basic over-voltage and over-current conditions, single event latchup (SEL) and cable discharge events (CDE), to latchup domino phenomena. It contains chapters focusing on bipolar physics, latchup theory, latchup and guard ring characterization structures, characterization testing, product level test systems, product level testing and experimental results. Discussions on state-of-the-art semiconductor processes, design layout, and circuit level and system level latchup solutions are also included, as well as: latchup semiconductor process solutions for both CMOS to BiCMOS, such as shallow trench, deep trench, retrograde wells, connecting implants, sub-collectors, heavily-doped buried layers, and buried grids – from single- to triple-well CMOS; practical latchup design methods, automated and bench-level latchup testing methods and techniques, latchup theory of logarithm resistance space, generalized alpha (a) space, beta (b) space, new latchup design methods– connecting the theoretical to the practical analysis, and; examples of latchup computer aided design (CAD) methodologies, from design rule checking (DRC) and logical-to-physical design, to new latchup CAD methodologies that address latchup for internal and external latchup on a local as well as global design level. Latchup acts as a companion text to the author’s series of books on ESD (electrostatic discharge) protection, serving as an invaluable reference for the professional semiconductor chip and system-level ESD engineer. Semiconductor device, process and circuit designers, and quality, reliability and failure analysis engineers will find it informative on the issues that confront modern CMOS technology. Practitioners in the automotive and aerospace industries will also find it useful. In addition, its academic treatment will appeal to both senior and graduate students with interests in semiconductor process, device physics, computer aided design and design integration.

Single Event Latchup in a Deep Submicron CMOS Technology

Download Single Event Latchup in a Deep Submicron CMOS Technology PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : 109 pages
Book Rating : 4.:/5 (275 download)

DOWNLOAD NOW!


Book Synopsis Single Event Latchup in a Deep Submicron CMOS Technology by : John Marvin Hutson

Download or read book Single Event Latchup in a Deep Submicron CMOS Technology written by John Marvin Hutson and published by . This book was released on 2008 with total page 109 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Comparison of DC Latchup Characterization Techniques for CMOS Technology

Download Comparison of DC Latchup Characterization Techniques for CMOS Technology PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : 204 pages
Book Rating : 4.:/5 (126 download)

DOWNLOAD NOW!


Book Synopsis Comparison of DC Latchup Characterization Techniques for CMOS Technology by : Ira H. Leventhal

Download or read book Comparison of DC Latchup Characterization Techniques for CMOS Technology written by Ira H. Leventhal and published by . This book was released on 1984 with total page 204 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Microelectronics Failure Analysis

Download Microelectronics Failure Analysis PDF Online Free

Author :
Publisher : ASM International
ISBN 13 : 0871708043
Total Pages : 813 pages
Book Rating : 4.8/5 (717 download)

DOWNLOAD NOW!


Book Synopsis Microelectronics Failure Analysis by :

Download or read book Microelectronics Failure Analysis written by and published by ASM International. This book was released on 2004-01-01 with total page 813 pages. Available in PDF, EPUB and Kindle. Book excerpt: For newcomers cast into the waters to sink or swim as well as seasoned professionals who want authoritative guidance desk-side, this hefty volume updates the previous (1999) edition. It contains the work of expert contributors who rallied to the job in response to a committee's call for help (the committee was assigned to the update by the Electron

CMOS Latch-up Modeling and Prevention

Download CMOS Latch-up Modeling and Prevention PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : 272 pages
Book Rating : 4.:/5 (29 download)

DOWNLOAD NOW!


Book Synopsis CMOS Latch-up Modeling and Prevention by : Kyle Wendell Terrill

Download or read book CMOS Latch-up Modeling and Prevention written by Kyle Wendell Terrill and published by . This book was released on 1985 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Advanced CMOS Process Technology

Download Advanced CMOS Process Technology PDF Online Free

Author :
Publisher : Elsevier
ISBN 13 : 0323156800
Total Pages : 305 pages
Book Rating : 4.3/5 (231 download)

DOWNLOAD NOW!


Book Synopsis Advanced CMOS Process Technology by : J Pimbley

Download or read book Advanced CMOS Process Technology written by J Pimbley and published by Elsevier. This book was released on 2012-12-02 with total page 305 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced CMOS Process Technology is part of the VLSI Electronics Microstructure Science series. The main topic of this book is complementary metal-oxide semiconductor or CMOS technology, which plays a significant part in the electronics systems. The topics covered in this book range from metallization, isolation techniques, reliability, and yield. The volume begins with an introductory chapter that discusses the microelectronics revolution of the 20th century. Then Chapter 2 puts focus on the CMOS devices and circuit background, discussing CMOS capacitors and field effect transistors. Metallization topics and concepts are covered in Chapter 3, while isolation techniques are tackled in Chapter 4. Long-term reliability of CMOS is the topic covered in Chapter 5. Finally, the ability of semiconductor technology to yield circuits is discussed in Chapter 6. The book is particularly addressed to engineers, scientists, and technical managers.

High Speed Latchup-free CMOS Using TiSi2, N-well Technology

Download High Speed Latchup-free CMOS Using TiSi2, N-well Technology PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : 68 pages
Book Rating : 4.:/5 (2 download)

DOWNLOAD NOW!


Book Synopsis High Speed Latchup-free CMOS Using TiSi2, N-well Technology by : Faheem Mohamedi

Download or read book High Speed Latchup-free CMOS Using TiSi2, N-well Technology written by Faheem Mohamedi and published by . This book was released on 1986 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt:

ESD Testing

Download ESD Testing PDF Online Free

Author :
Publisher : John Wiley & Sons
ISBN 13 : 1118707141
Total Pages : 328 pages
Book Rating : 4.1/5 (187 download)

DOWNLOAD NOW!


Book Synopsis ESD Testing by : Steven H. Voldman

Download or read book ESD Testing written by Steven H. Voldman and published by John Wiley & Sons. This book was released on 2016-10-07 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: With the evolution of semiconductor technology and global diversification of the semiconductor business, testing of semiconductor devices to systems for electrostatic discharge (ESD) and electrical overstress (EOS) has increased in importance. ESD Testing: From Components to Systems updates the reader in the new tests, test models, and techniques in the characterization of semiconductor components for ESD, EOS, and latchup. Key features: Provides understanding and knowledge of ESD models and specifications including human body model (HBM), machine model (MM), charged device model (CDM), charged board model (CBM), cable discharge events (CDE), human metal model (HMM), IEC 61000-4-2 and IEC 61000-4-5. Discusses new testing methodologies such as transmission line pulse (TLP), to very fast transmission line pulse (VF-TLP), and future methods of long pulse TLP, to ultra-fast TLP (UF-TLP). Describes both conventional testing and new testing techniques for both chip and system level evaluation. Addresses EOS testing, electromagnetic compatibility (EMC) scanning, to current reconstruction methods. Discusses latchup characterization and testing methodologies for evaluation of semiconductor technology to product testing. ESD Testing: From Components to Systems is part of the authors’ series of books on electrostatic discharge (ESD) protection; this book will be an invaluable reference for the professional semiconductor chip and system-level ESD and EOS test engineer. Semiconductor device and process development, circuit designers, quality, reliability and failure analysis engineers will also find it an essential reference. In addition, its academic treatment will appeal to both senior and graduate students with interests in semiconductor process, device physics, semiconductor testing and experimental work.

Advanced MOS Device Physics

Download Advanced MOS Device Physics PDF Online Free

Author :
Publisher : Elsevier
ISBN 13 : 0323153135
Total Pages : 383 pages
Book Rating : 4.3/5 (231 download)

DOWNLOAD NOW!


Book Synopsis Advanced MOS Device Physics by : Norman Einspruch

Download or read book Advanced MOS Device Physics written by Norman Einspruch and published by Elsevier. This book was released on 2012-12-02 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 18: Advanced MOS Device Physics explores several device physics topics related to metal oxide semiconductor (MOS) technology. The emphasis is on physical description, modeling, and technological implications rather than on the formal aspects of device theory. Special attention is paid to the reliability physics of small-geometry MOSFETs. Comprised of eight chapters, this volume begins with a general picture of MOS technology development from the device and processing points of view. The critical issue of hot-carrier effects is discussed, along with the device engineering aspects of this problem; the emerging low-temperature MOS technology; and the problem of latchup in scaled MOS circuits. Several device models that are suitable for use in circuit simulators are also described. The last chapter examines novel electron transport effects observed in ultra-small MOS structures. This book should prove useful to semiconductor engineers involved in different aspects of MOS technology development, as well as for researchers in this field and students of the corresponding disciplines.

ULSI Science and Technology/1987

Download ULSI Science and Technology/1987 PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : 874 pages
Book Rating : 4.E/5 ( download)

DOWNLOAD NOW!


Book Synopsis ULSI Science and Technology/1987 by : S. Broydo

Download or read book ULSI Science and Technology/1987 written by S. Broydo and published by . This book was released on 1987 with total page 874 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Qualitative Characterization of Single-event Transient and Latchup Trends in 180 Nm CMOS Technology

Download Qualitative Characterization of Single-event Transient and Latchup Trends in 180 Nm CMOS Technology PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : 94 pages
Book Rating : 4.:/5 (712 download)

DOWNLOAD NOW!


Book Synopsis Qualitative Characterization of Single-event Transient and Latchup Trends in 180 Nm CMOS Technology by : Cody Adam Dinkins

Download or read book Qualitative Characterization of Single-event Transient and Latchup Trends in 180 Nm CMOS Technology written by Cody Adam Dinkins and published by . This book was released on 2011 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt:

ESD

Download ESD PDF Online Free

Author :
Publisher : John Wiley & Sons
ISBN 13 : 0470030062
Total Pages : 412 pages
Book Rating : 4.4/5 (7 download)

DOWNLOAD NOW!


Book Synopsis ESD by : Steven H. Voldman

Download or read book ESD written by Steven H. Voldman and published by John Wiley & Sons. This book was released on 2006-02-03 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt: The scaling of semiconductor devices from sub-micron to nanometer dimensions is driving the need for understanding the design of electrostatic discharge (ESD) circuits, and the response of these integrated circuits (IC) to ESD phenomena. ESD Circuits and Devices provides a clear insight into the layout and design of circuitry for protection against electrical overstress (EOS) and ESD. With an emphasis on examples, this text: explains ESD buffering, ballasting, current distribution, design segmentation, feedback, coupling, and de-coupling ESD design methods; outlines the fundamental analytical models and experimental results for the ESD design of MOSFETs and diode semiconductor device elements, with a focus on CMOS, silicon on insulator (SOI), and Silicon Germanium (SiGe) technology; focuses on the ESD design, optimization, integration and synthesis of these elements and concepts into ESD networks, as well as applying within the off-chip driver networks, and on-chip receivers; and highlights state-of-the-art ESD input circuits, as well as ESD power clamps networks. Continuing the author’s series of books on ESD, this book will be an invaluable reference for the professional semiconductor chip and system ESD engineer. Semiconductor device and process development, quality, reliability and failure analysis engineers will also find it an essential tool. In addition, both senior undergraduate and graduate students in microelectronics and IC design will find its numerous examples useful.

CMOS Electronics

Download CMOS Electronics PDF Online Free

Author :
Publisher : John Wiley & Sons
ISBN 13 : 9780471476696
Total Pages : 370 pages
Book Rating : 4.4/5 (766 download)

DOWNLOAD NOW!


Book Synopsis CMOS Electronics by : Jaume Segura

Download or read book CMOS Electronics written by Jaume Segura and published by John Wiley & Sons. This book was released on 2004-03-26 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt: CMOS manufacturing environments are surrounded with symptoms that can indicate serious test, design, or reliability problems, which, in turn, can affect the financial as well as the engineering bottom line. This book educates readers, including non-engineers involved in CMOS manufacture, to identify and remedy these causes. This book instills the electronic knowledge that affects not just design but other important areas of manufacturing such as test, reliability, failure analysis, yield-quality issues, and problems. Designed specifically for the many non-electronic engineers employed in the semiconductor industry who need to reliably manufacture chips at a high rate in large quantities, this is a practical guide to how CMOS electronics work, how failures occur, and how to diagnose and avoid them. Key features: Builds a grasp of the basic electronics of CMOS integrated circuits and then leads the reader further to understand the mechanisms of failure. Unique descriptions of circuit failure mechanisms, some found previously only in research papers and others new to this publication. Targeted to the CMOS industry (or students headed there) and not a generic introduction to the broader field of electronics. Examples, exercises, and problems are provided to support the self-instruction of the reader.

High Voltage Devices and Circuits in Standard CMOS Technologies

Download High Voltage Devices and Circuits in Standard CMOS Technologies PDF Online Free

Author :
Publisher : Springer Science & Business Media
ISBN 13 : 1475754043
Total Pages : 294 pages
Book Rating : 4.4/5 (757 download)

DOWNLOAD NOW!


Book Synopsis High Voltage Devices and Circuits in Standard CMOS Technologies by : Hussein Ballan

Download or read book High Voltage Devices and Circuits in Standard CMOS Technologies written by Hussein Ballan and published by Springer Science & Business Media. This book was released on 2013-03-14 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt: Standard voltages used in today's ICs may vary from about 1.3V to more than 100V, depending on the technology and the application. High voltage is therefore a relative notion. High Voltage Devices and Circuits in Standard CMOS Technologies is mainly focused on standard CMOS technologies, where high voltage (HV) is defined as any voltage higher than the nominal (low) voltage, i.e. 5V, 3.3V, or even lower. In this standard CMOS environment, IC designers are more and more frequently confronted with HV problems, particularly at the I/O level of the circuit. In the first group of applications, a large range of industrial or consumer circuits either require HV driving capabilities, or are supposed to work in a high-voltage environment. This includes ultrasonic drivers, flat panel displays, robotics, automotive, etc. On the other hand, in the emerging field of integrated microsystems, MEMS actuators mainly make use of electrostatic forces involving voltages in the typical range of 30 to 60V. Last but not least, with the advent of deep sub-micron and/or low-power technologies, the operating voltage tends towards levels ranging from 1V to 2.5V, while the interface needs to be compatible with higher voltages, such as 5V. For all these categories of applications, it is usually preferable to perform most of the signal processing at low voltage, while the resulting output rises to a higher voltage level. Solving this problem requires some special actions at three levels: technology, circuit design and layout. High Voltage Devices and Circuits in Standard CMOS Technologies addresses these topics in a clear and organized way. The theoretical background is supported by practical information and design examples. It is an invaluable reference for researchers and professionals in both the design and device communities.

CMOS Devices and Technology for VLSI

Download CMOS Devices and Technology for VLSI PDF Online Free

Author :
Publisher :
ISBN 13 :
Total Pages : 378 pages
Book Rating : 4.3/5 (91 download)

DOWNLOAD NOW!


Book Synopsis CMOS Devices and Technology for VLSI by : John Y. Chen

Download or read book CMOS Devices and Technology for VLSI written by John Y. Chen and published by . This book was released on 1990 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: Very Good,No Highlights or Markup,all pages are intact.