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Author : Materials Research Society
Publisher :
ISBN 13 :
Total Pages : 216 pages
Book Rating : 4.:/5 (41 download)
Download or read book Ion Implantation Metallurgy written by Materials Research Society and published by . This book was released on 1980 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : V. Ashworth
Publisher : Elsevier
ISBN 13 : 1483280187
Total Pages : 385 pages
Book Rating : 4.4/5 (832 download)
Download or read book Ion Implantation Into Metals written by V. Ashworth and published by Elsevier. This book was released on 2016-04-20 with total page 385 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion Implantation into Metals presents the proceedings of the 3rd International Conference on the Modification of Surface Properties of Metals by Ion Implantation, held at UMIST, Manchester, UK on June 23-26, 1981. The book includes papers on aqueous corrosion of ion-implanted iron; the mechanical properties and high temperature oxidation behavior in aqueous corrosion; and the potential of ion beam processing in this field of materials science and engineering. The text also presents papers on the important scientific progress in metal physics and related subjects.
Author : J.F. Ziegler
Publisher : Elsevier
ISBN 13 : 0323161650
Total Pages : 509 pages
Book Rating : 4.3/5 (231 download)
Download or read book Ion Implantation Science and Technology written by J.F. Ziegler and published by Elsevier. This book was released on 2012-12-02 with total page 509 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion Implantation Science and Technology: Second Edition, just like the first edition, serves as both an introduction and tutorial to the science, techniques, and machines involved in the subject. The book is divided into two parts - Part 1: Ion Implantation Science and Part 2: Ion Implantation Technology. Part 1 covers topics such as the stopping and range of ions in solids; ion implantation damage in silicon; experimental annealing and activation; and the measurement on ion implantation. Part 2 includes ion optics and focusing on implanter design; photoresist problems and particle contamination; ion implantation diagnostics and process control; and emission of ionizing radiation from ion implanters. The text is recommended for engineers who would like to be acquainted with the principles and processes behind ion implantation or make studies on the field.
Author : Metallurgical Society of AIME Staff
Publisher :
ISBN 13 : 9780608130651
Total Pages : 203 pages
Book Rating : 4.1/5 (36 download)
Download or read book Ion Implantation Metallurgy written by Metallurgical Society of AIME Staff and published by . This book was released on with total page 203 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : F. A. Smidt
Publisher : William Andrew
ISBN 13 :
Total Pages : 262 pages
Book Rating : 4.:/5 (41 download)
Download or read book Ion Implantation for Materials Processing written by F. A. Smidt and published by William Andrew. This book was released on 1983 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt: Good,No Highlights,No Markup,all pages are intact, Slight Shelfwear,may have the corners slightly dented, may have slight color changes/slightly damaged spine.
Author : Carolyn M. Preece
Publisher :
ISBN 13 : 9780890520369
Total Pages : 0 pages
Book Rating : 4.5/5 (23 download)
Download or read book Ion implantation metallurgy : proceedings written by Carolyn M. Preece and published by . This book was released on 1980 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Emanuele Rimini
Publisher : Springer Science & Business Media
ISBN 13 : 9780792395201
Total Pages : 418 pages
Book Rating : 4.3/5 (952 download)
Download or read book Ion Implantation: Basics to Device Fabrication written by Emanuele Rimini and published by Springer Science & Business Media. This book was released on 1994-12-31 with total page 418 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.
Author : Billy Crowder
Publisher : Springer Science & Business Media
ISBN 13 : 146842064X
Total Pages : 644 pages
Book Rating : 4.4/5 (684 download)
Download or read book Ion Implantation in Semiconductors and Other Materials written by Billy Crowder and published by Springer Science & Business Media. This book was released on 2013-03-13 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the years since the first conference in this series was held at Thousand Oaks, California, in 1970, ion implantation has been an expanding and exciting research area. The advances in this field were so rapid that a second conference convened at Garmisch Partenkirchen, Germany, in 1971. At the present time, our under standing of the ion implantation process in semiconductors such as Si and Ge has reached a stage of maturity and ion implantation techniques are firmly established in semiconductor device technology. The advances in compound semiconductors have not been as rapid. There has also been a shift in emphasis in ion implanta tion research from semiconductors to other materials such as metals and insulators. It was appropriate to increase the scope of the conference and the IIIrd International Conference on Ion Implanta tion in Semiconductors and Other Materials was held at Yorktown Heights, New York, December 11 to 14, 1972. A significant number of the papers presented at this conference dealt with ion implanta tion in metals, insulators, and compound semiconductors. The International Committee responsible for organizing this conference consisted of B. L. Crowder, J. A. Davies, F. H. Eisen, Ph. Glotin, T. Itoh, A. U. MacRae, J. W. Mayer, G. Dearnaley, and I. Ruge. The Conference attracted 180 participants from twelve countries. The success of the Conference was due in large measure to the financial support of our sponsors, Air Force Cambridge Research Laboratories and the Office of Naval Research.
Author : Materials Research Society
Publisher :
ISBN 13 :
Total Pages : 216 pages
Book Rating : 4.3/5 (91 download)
Download or read book Ion Implantation Metallurgy written by Materials Research Society and published by . This book was released on 1980 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : United States. Bureau of Mines
Publisher :
ISBN 13 :
Total Pages : 40 pages
Book Rating : 4.3/5 (91 download)
Download or read book Characterization of Alloys Formed by Ion Implantation written by United States. Bureau of Mines and published by . This book was released on 1980 with total page 40 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : G. Dearnaley
Publisher :
ISBN 13 :
Total Pages : 24 pages
Book Rating : 4.:/5 (898 download)
Download or read book Ion Implantation in Metals written by G. Dearnaley and published by . This book was released on 1974 with total page 24 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : F. L. Vook
Publisher :
ISBN 13 :
Total Pages : 24 pages
Book Rating : 4.:/5 (961 download)
Download or read book Ion Implantation in Metals written by F. L. Vook and published by . This book was released on 1977 with total page 24 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : S. T. Picraux
Publisher : Springer
ISBN 13 :
Total Pages : 732 pages
Book Rating : 4.3/5 (91 download)
Download or read book Applications of Ion Beams to Metals written by S. T. Picraux and published by Springer. This book was released on 1974-05 with total page 732 pages. Available in PDF, EPUB and Kindle. Book excerpt: Conferences have been held in the past on atomic collision phenomena and on the applications of ion beams to semiconductors. However, within the past year it became apparent that there is a growing new area of active research involving the use of ion beams to modify and study the basic properties of metals. As a result a topical conference was organized to bring together for the first time scientists with a wide range of backgrounds and interests related to this field. This book contains the proceed ings of the International Conference on Applications of Ion Beams to Metals which was held in Albuquerque, New Mexico, October 2-4, 1973. Much of the work presented herein represents ideas and concepts which have had little or no previous exposure in the open literature. The application of ion beams to superconducting prop erties for example is quite new, as is the chapter on ion induced surface reactions, which includes primarily oxidation and corrosion studies of implanted materials. These areas, as well as the chapter on implantation alloy formation, indicate important future areas of the application of ion beams to metals. A reading of the chapters on superconductivity and on oxida tion and corrosion can serve to bring one up to date on nearly all the existing information in these areas of the ion beam mod ification of metals. A broad perspective of the oxidation area is given in the invited paper by G. Dearnaley.
Author : Clive R. Clayton
Publisher :
ISBN 13 :
Total Pages : 116 pages
Book Rating : 4.:/5 (227 download)
Download or read book Ion Implantation Metallurgy written by Clive R. Clayton and published by . This book was released on 1980 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt: The ion implantation technique was used in order to improve the surface mechanical properties and corrosion resistance of iron and steel. Nitrogen implantation was found to improve the fatigue lifetime and cavitation resistance of 1018 steel. TEM and internal friction studies were carried out in order to determine the nature of this strengthening mechanism. Phosphorous implantation into 304 stainless steel was shown to produce a microcrystalline surface alloy saturated with P. Combined electrochemical and XPS studies revealed that the general corrosion of 304 in deaerated 1N H2SO4 is improved, this effect being due to the formation of a modified passive film. Finally, a study is reported of the radiation effects resulting from the ion implantation AS(+)yields Au and Fe(+) yields Al. The resulting surface alloys were studied using HVEM.
Author : Michael Nastasi
Publisher : Springer Science & Business Media
ISBN 13 : 3540452982
Total Pages : 271 pages
Book Rating : 4.5/5 (44 download)
Download or read book Ion Implantation and Synthesis of Materials written by Michael Nastasi and published by Springer Science & Business Media. This book was released on 2007-05-16 with total page 271 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.
Author : Susumu Namba
Publisher : Springer Science & Business Media
ISBN 13 : 1468421514
Total Pages : 716 pages
Book Rating : 4.4/5 (684 download)
Download or read book Ion Implantation in Semiconductors written by Susumu Namba and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This use of ion implantation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Partenkirchen, Germany, in 1971. At the third conference, which convened at Yorktown Heights, New York in 1973, the emphasis was broadened to include metals and insulators as well as semiconductors. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974. A huge number of papers had been submitted to this conference. All papers which were presented at the Fourth International Conference on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I wish to thank the authors for their excellent papers and the sponsors for their financial support. The International Committee responsible for advising this conference consisted of B.L. Crowder, J.A. Davies, G. Dearna1ey, F.H. Eisen, Ph. G1otin, T. Itoh, A.U. MacRae, J.W. Mayer, S. Namba, I. Ruge, and F.L. Vook.
Author : C. R. Clayton
Publisher :
ISBN 13 :
Total Pages : 16 pages
Book Rating : 4.:/5 (227 download)
Download or read book Ion Implantation Metallurgy: A Study of the Composition, Structure and Corrosion Behavior of Surface Alloys Formed by Ion Implantation and Ion Beam Mixing written by C. R. Clayton and published by . This book was released on 1984 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt: DIGM(Diffusion Induced Grain Boundary Migration) is necessarily a near surface phenomenon, as may be visualized by artificially separating the process into discreet steps (which, it should be emphasized, occur continuously and simutaneously in practice). The first step is the diffusion of a small amount of solute into a stationary grain boundary, Cb, above that in the adjacent matrix. Immediately following this step, the boundary moves sideways by means of some atomic shuffling cross the boundary plane: This deposits the solute from the boundary into the volume of matrix through which it sweeps. After this second step, the concentration of solute in the boundary is restored to its original level, and so, therefore, is the driving force for grain boundary diffusion, assuming that the source concentration remains constant, and that there is no effect of strain in the alloyed region. The process should then continue, if the boundary continues to move in the same direction and and the depth and concentration of the allowed zone should both be related to the grain boundary diffusivity and the grain boundary mobility. Since the ability to control the depth and concentration of an alloyed zone is potentially useful for the purpose of tailing surface properties to service needs, a study of the exact relationships is desirable, however, much of the necessary information is not yet available, and complicated relationships may exist between grain boundary diffusivity and mobility.
