Investigation of Near-Surface Chemical, Physical and Mechanical Properties of Silicon Carbide Crystals and Fibers Modified by Ion Implantation

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ISBN 13 :
Total Pages : 108 pages
Book Rating : 4.:/5 (227 download)

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Book Synopsis Investigation of Near-Surface Chemical, Physical and Mechanical Properties of Silicon Carbide Crystals and Fibers Modified by Ion Implantation by : J. A. Spitznagel

Download or read book Investigation of Near-Surface Chemical, Physical and Mechanical Properties of Silicon Carbide Crystals and Fibers Modified by Ion Implantation written by J. A. Spitznagel and published by . This book was released on 1988 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modification of chemical, physical and mechanical properties of ceramic/semiconductor surfaces by ion implantation provides an opportunity to define and obtain desirable properties for a variety of applications. These include: interfaces in composite materials, electrical properties of devices and contacts, and specialized surfaces for optical waveguides, wear and corrosion resistance, etc. In this study, single crystals (6H), and whiskers of high purity silicon carbide were implanted with a variety of n- and p-type dopants (B, N, A1, P), an isovalent dopant (Ti), inert species (Ne) and hydrogen. Isochronal anneals at temperatures up to 1173 K permitted systematic evaluation of thermal effects in the implanted region. Implants fluences were normalized to permit comparisons on the basis of equal concentrations of displaced Si atoms for each ion. microstructural, mechanical and chemical effects were studied by a series of RBS/channeling, TEM, SEM, microhardness, microtensile, AES, SIMS, and wetting (sputtered and molten metal) measurements. Recovery of crystalline structure during annealing is shown to be relatively independent of the implant species but depends upon the number of atomic displacements in the Si sublattice. Near-surface mechanical and chemical effects, however, are very dependent on the chemical/electrical nature of the implanted ions. Applications to ceramic/metal interfaces in metal matrix composites are discussed.

Scientific and Technical Aerospace Reports

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ISBN 13 :
Total Pages : 500 pages
Book Rating : 4.X/5 (4 download)

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Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Energy Research Abstracts

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ISBN 13 :
Total Pages : 782 pages
Book Rating : 4.3/5 (129 download)

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Download or read book Energy Research Abstracts written by and published by . This book was released on 1995 with total page 782 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Technical Reports Awareness Circular : TRAC.

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ISBN 13 :
Total Pages : 516 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Technical Reports Awareness Circular : TRAC. by :

Download or read book Technical Reports Awareness Circular : TRAC. written by and published by . This book was released on 1989 with total page 516 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Government Reports Announcements & Index

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ISBN 13 :
Total Pages : 1090 pages
Book Rating : 4.0/5 ( download)

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Book Synopsis Government Reports Announcements & Index by :

Download or read book Government Reports Announcements & Index written by and published by . This book was released on 1989 with total page 1090 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Physics Briefs

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ISBN 13 :
Total Pages : 1256 pages
Book Rating : 4.3/5 (91 download)

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Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1256 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Energy Research Abstracts

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ISBN 13 :
Total Pages : 532 pages
Book Rating : 4.:/5 (3 download)

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Download or read book Energy Research Abstracts written by and published by . This book was released on with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Advancing Silicon Carbide Electronics Technology II

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Publisher : Materials Research Forum LLC
ISBN 13 : 164490067X
Total Pages : 292 pages
Book Rating : 4.6/5 (449 download)

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Book Synopsis Advancing Silicon Carbide Electronics Technology II by : Konstantinos Zekentes

Download or read book Advancing Silicon Carbide Electronics Technology II written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2020-03-15 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book presents an in-depth review and analysis of Silicon Carbide device processing. The main topics are: (1) Silicon Carbide Discovery, Properties and Technology, (2) Processing and Application of Dielectrics in Silicon Carbide Devices, (3) Doping by Ion Implantation, (4) Plasma Etching and (5) Fabrication of Silicon Carbide Nanostructures and Related Devices. The book is also suited as supplementary textbook for graduate courses. Keywords: Silicon Carbide, SiC, Technology, Processing, Semiconductor Devices, Material Properties, Polytypism, Thermal Oxidation, Post Oxidation Annealing, Surface Passivation, Dielectric Deposition, Field Effect Mobility, Ion Implantation, Post Implantation Annealing, Channeling, Surface Roughness, Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Micromasking, Microtrenching, Nanocrystal, Nanowire, Nanotube, Nanopillar, Nanoelectromechanical Systems (NEMS).

Growth and Mechanical Properties of Filamentary Silicon Carbide Crystals

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ISBN 13 :
Total Pages : 82 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Growth and Mechanical Properties of Filamentary Silicon Carbide Crystals by : Luke A. Yerkovich

Download or read book Growth and Mechanical Properties of Filamentary Silicon Carbide Crystals written by Luke A. Yerkovich and published by . This book was released on 1961 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Engineered Materials Abstracts

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ISBN 13 :
Total Pages : 688 pages
Book Rating : 4.3/5 (91 download)

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Download or read book Engineered Materials Abstracts written by and published by . This book was released on 1995 with total page 688 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Fundamentals of Silicon Carbide Technology

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Publisher : John Wiley & Sons
ISBN 13 : 1118313550
Total Pages : 565 pages
Book Rating : 4.1/5 (183 download)

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Book Synopsis Fundamentals of Silicon Carbide Technology by : Tsunenobu Kimoto

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

INIS Atomindex

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ISBN 13 :
Total Pages : 540 pages
Book Rating : 4.3/5 (91 download)

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Download or read book INIS Atomindex written by and published by . This book was released on 1994 with total page 540 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon Carbide Ceramics—1

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Publisher : Springer Science & Business Media
ISBN 13 : 9781851665600
Total Pages : 320 pages
Book Rating : 4.6/5 (656 download)

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Book Synopsis Silicon Carbide Ceramics—1 by : S. Somiya

Download or read book Silicon Carbide Ceramics—1 written by S. Somiya and published by Springer Science & Business Media. This book was released on 1991-08-31 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discovered by Edward G. Acheson about 1890, silicon carbide is one of the oldest materials and also a new material. It occurs naturally in meteorites, but in very small amounts and is not in a useable state as an industrial material. For industrial require ments, large amounts of silicon carbide must be synthesized by solid state reactions at high temperatures. Silicon carbide has been used for grinding and as an abrasive material since its discovery. During World War II, silicon carbide was used as a heating element; however, it was difficult to obtain high density sintered silicon carbide bodies. In 1974, S. Prochazka reported that the addition of small amounts of boron compounds and carbide were effective in the sintering process to obtain high density. It was then possible to produce high density sintered bodies by pressureless sintering methods in ordinary atmosphere. Since this development, silicon carbide has received great attention as one of the high temperature structural ceramic materials. Since the 1970s, many research papers have appeared which report studies of silicon carbide and silicon nitride for structural ceramics.

Ceramic Abstracts

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ISBN 13 :
Total Pages : 252 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Ceramic Abstracts by :

Download or read book Ceramic Abstracts written by and published by . This book was released on 1998 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt:

International Aerospace Abstracts

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ISBN 13 :
Total Pages : 920 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis International Aerospace Abstracts by :

Download or read book International Aerospace Abstracts written by and published by . This book was released on 1998 with total page 920 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon Carbide Ceramics

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Publisher : Springer Science & Business Media
ISBN 13 : 9781851665617
Total Pages : 328 pages
Book Rating : 4.6/5 (656 download)

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Book Synopsis Silicon Carbide Ceramics by : S. Somiya

Download or read book Silicon Carbide Ceramics written by S. Somiya and published by Springer Science & Business Media. This book was released on 1991-08-31 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbides have major industrial uses as high temperature structural ceramic materials. These two volumes are translated from the Japanese and provide a comprehensive account of the seminal work going on in Japan.

Advancing Silicon Carbide Electronics Technology I

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Publisher : Materials Research Forum LLC
ISBN 13 : 1945291850
Total Pages : 249 pages
Book Rating : 4.9/5 (452 download)

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Book Synopsis Advancing Silicon Carbide Electronics Technology I by : Konstantinos Zekentes

Download or read book Advancing Silicon Carbide Electronics Technology I written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2018-09-20 with total page 249 pages. Available in PDF, EPUB and Kindle. Book excerpt: The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.