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Inverted Ge Gaas Heterojunction Bipolar Transistors
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Book Synopsis Physics and Technology of Heterojunction Devices by : Institution of Electrical Engineers
Download or read book Physics and Technology of Heterojunction Devices written by Institution of Electrical Engineers and published by IET. This book was released on 1991 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together developments in both the physics and engineering of semiconductor devices. Much attention is paid to so-called 'band gap engineering' which is enabling new and higher performance devices to be researched and introduced.
Book Synopsis SiGe, GaAs, and InP Heterojunction Bipolar Transistors by : Jiann S. Yuan
Download or read book SiGe, GaAs, and InP Heterojunction Bipolar Transistors written by Jiann S. Yuan and published by Wiley-Interscience. This book was released on 1999-04-12 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, comprehensive guide to heterojunction bipolar transistor technology. Owing to their superior performance in microwave and millimeter-wave applications, heterojunction bipolar transistors (HBTs) have become a major force in mobile and wireless communications. This book offers an integrated treatment of SiGe, GaAs, and InP HBTs, presenting a much-needed overview of HBTs based on different materials systems-their fabrication, analysis, and testing procedures. Highly respected expert Jiann S. Yuan discusses in depth the dc and RF performance and modeling of HBT devices, including simulation, thermal instability, reliability, low-temperature and high-temperature performance, and HBT analog and digital circuits. He provides step-by-step presentations of HBT materials-including Si HBTs and III-V and IV-IV compound HBTs, which are rarely described in the literature. Also covered are device and circuit interaction as well as specific high-speed devices in mobile and wireless communications. This immensely useful guide to a rapidly expanding field includes more than 200 figures, tables of different material systems in terms of their physical parameters, and up-to-date experimental results culled from the latest research. An essential resource for circuit and device designers in the semiconductor industry, SiGe, GaAs, and InP Heterojunction Bipolar Transistors is also useful for graduate students in electrical engineering, applied physics, and materials science.
Book Synopsis Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA by : Gerald B. Stringfellow
Download or read book Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA written by Gerald B. Stringfellow and published by CRC Press. This book was released on 2020-11-25 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.
Book Synopsis Silicon-germanium Heterojunction Bipolar Transistors by : John D. Cressler
Download or read book Silicon-germanium Heterojunction Bipolar Transistors written by John D. Cressler and published by Artech House. This book was released on 2003 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.
Book Synopsis GaAs Devices and Circuits by : Michael S. Shur
Download or read book GaAs Devices and Circuits written by Michael S. Shur and published by Springer Science & Business Media. This book was released on 2013-11-21 with total page 677 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.
Book Synopsis Technology Computer Aided Design for Si, SiGe and GaAs Integrated Circuits by : G.A. Armstrong
Download or read book Technology Computer Aided Design for Si, SiGe and GaAs Integrated Circuits written by G.A. Armstrong and published by IET. This book was released on 2007-11-30 with total page 457 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to deal with a broad spectrum of process and device design, and modeling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-development engineers and scientists involved in microelectronics technology and device design via Technology CAD, and TCAD engineers and developers.
Book Synopsis Physics of Semiconductor Devices by : Massimo Rudan
Download or read book Physics of Semiconductor Devices written by Massimo Rudan and published by Springer. This book was released on 2017-09-27 with total page 936 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physical concepts, while keeping the internal coherence of the analysis and explaining the different levels of approximation. Coverage includes the main steps used in the fabrication process of integrated circuits: diffusion, thermal oxidation, epitaxy, and ion implantation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS, CMOS), including a number of solid-state sensors. The final chapters are devoted to the measuring methods for semiconductor-device parameters, and to a brief illustration of the scaling rules and numerical methods applied to the design of semiconductor devices.
Book Synopsis Handbook of III-V Heterojunction Bipolar Transistors by : William Liu
Download or read book Handbook of III-V Heterojunction Bipolar Transistors written by William Liu and published by Wiley-Interscience. This book was released on 1998-04-27 with total page 1312 pages. Available in PDF, EPUB and Kindle. Book excerpt: The definitive hands-on guide to heterojunction bipolar transistors In recent years, heterojunction bipolar transistor (HBT) technology has become an intensely researched area in universities and industry worldwide. Boasting superior performance over silicon bipolar transistors with its combined high speed, high linearity, and high power requirements, the III-V HBT is fast becoming a major player in wireless communication, power amplifiers, mixers, and frequency synthesizers. Handbook of III-V Heterojunction Bipolar Transistors presents a comprehensive, systematic reference for this cutting-edge technology. In one self-contained volume, it covers virtually every HBT topic imaginable—introductory and advanced, theoretical and practical—from device physics, to design issues, to HBT performance in digital and analog circuits. It features: A user-friendly, integrated approach to HBTs and circuit design that can be applied in diverse disciplines A discussion of factors determining transistor operation, including thermal properties, failure mechanisms, high-frequency measurements and models, switching characteristics, noise and distortion, and modern device fabrications Over 800 illustrations, showing how to use concepts and equations in the real world An introduction to device physics and semiconductor basics Many worked-out examples and end-of-chapter problem sets Fully developed mathematical derivations Handbook of III-V Heterojunction Bipolar Transistors is an important reference for practicing engineers and researchers in cellular wireless communication and microwave-millimeter electronics as well as for wireless circuit design engineers. It is also extremely useful for advanced undergraduate and graduate students studying advanced semiconductor and microwave circuits.
Download or read book Physics Briefs written by and published by . This book was released on 1992 with total page 1416 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Arsenide and Related Compounds 1990, Proceedings of the 17th INT Symposium on Gallium Arsenide and Related Compounds, Jersey, Channel Islands, September 1990 by : K. E. Singer
Download or read book Gallium Arsenide and Related Compounds 1990, Proceedings of the 17th INT Symposium on Gallium Arsenide and Related Compounds, Jersey, Channel Islands, September 1990 written by K. E. Singer and published by CRC Press. This book was released on 1991 with total page 672 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 17th International Symposium on Gallium Arsenide and related Compounds was held in Jersey, Channel Islands, on 24 - 27 September 1990. This volume contains a total of 112 papers, including four invited papers and a number of late news papers. The papers are divided into eight chapters relating to various aspects of the subject. These include bulk and epitaxial growth, characterization, processing, electron transport, and both high speed and opto-electronic devices. Current research and recent developments in these areas are covered. Particularly apparent is the increasing importance of III-V devices. These proceedings will be invaluable to researchers in solid state semiconductor and device physics, both in industry and academia, as they represent the latest developments in this exciting and rapidly developing field.
Book Synopsis Compound Semiconductor Electronics by : Michael Shur
Download or read book Compound Semiconductor Electronics written by Michael Shur and published by World Scientific. This book was released on 1996 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt: In many respects, compound semiconductor technology has reached the age of maturity when applications will have been defined, yields are high enough and well established, and gallium arsenide and related compounds have carved many important niches in electronics. This book reviews the state-of-the-art of compound semiconductor electronics. It covers the microwave, millimeter wave, and submillimeter wave devices, monolithic microwave and digital integrated circuits made from compound semiconductors and emerging wide band semiconductor materials. The book is written by leading experts in compound semiconductor electronics from industry and academia and strikes the balance between practical applications, record-breaking results, and design and modeling tools specific for compound semiconductor technology. Engineers, scientists, and graduate students working in solid state electronics and especially in the area of compound semiconductor electronics will find this book very useful. It could also be used as a text or a supplementary text for graduate courses in this field.
Book Synopsis Selected Works of Professor Herbert Kroemer by : C. K. Maiti
Download or read book Selected Works of Professor Herbert Kroemer written by C. K. Maiti and published by World Scientific. This book was released on 2008 with total page 385 pages. Available in PDF, EPUB and Kindle. Book excerpt: Information technology has changed our society radically. Just as the integrated circuits have been the prime mover for electronics, high-speed transistors and semiconductor lasers based on heterostructures are now playing the same role in modern telecommunications. Professor Kroemer's conceptual work on heterostructures began in the early 1950s as he was looking for a way to improve transistor speed and performance. In the 1960s, he applied the same principles to the development of lasers and light-emitting diodes, showing that they could achieve continuous operation at room temperature OCo something thought impossible at that time. His deep fundamental scientific work has had a profound effect on technology and society, transforming and improving our lives.This reprint collection brings together Professor Kroemer's most important papers, presenting a comprehensive perspective of the field. It covers topics ranging from substrate materials, electronic properties, process technology, and devices, to circuits and applications. This reprint collection will help the reader identify the key stages in the development of heterostructure devices and lasers from early research through to its integration in current manufacturing. Devoted to R&D engineers and scientists who are actively involved in extending the nano- and microelectronics roadmap mainly via heterostructure engineering, this volume may also serve as a reference for postgraduate and research students."
Book Synopsis Publications of the National Institute of Standards and Technology ... Catalog by : National Institute of Standards and Technology (U.S.)
Download or read book Publications of the National Institute of Standards and Technology ... Catalog written by National Institute of Standards and Technology (U.S.) and published by . This book was released on 1991 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Heteroepitaxy of Semiconductors by : John E. Ayers
Download or read book Heteroepitaxy of Semiconductors written by John E. Ayers and published by CRC Press. This book was released on 2016-10-03 with total page 660 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.
Book Synopsis Gallium Arsenide Digital Circuits by : Omar Wing
Download or read book Gallium Arsenide Digital Circuits written by Omar Wing and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide technology has come of age. GaAs integrated circuits are available today as gate arrays with an operating speed in excess of one Gigabits per second. Special purpose GaAs circuits are used in optical fiber digital communications systems for the purpose of regeneration, multiplexing and switching of the optical signals. As advances in fabrication and packaging techniques are made, the operat ing speed will further increase and the cost of production will reach a point where large scale application of GaAs circuits will be economical in these and other systems where speed is paramount. This book is written for students and engineers who wish to enter into this new field of electronics for the first time and who wish to embark on a serious study of the subject of GaAs circuit design. No prior knowledge of GaAs technology is assumed though some previous experience with MOS circuit design will be helpful. A good part of the book is devoted to circuit analysis, to the extent that is possible for non linear circuits. The circuit model of the GaAs transistor is derived from first principles and analytic formulas useful in predicting the approxi mate circuit performance are also derived. Computer simulation is used throughout the book to show the expected performance and to study the effects of parameter variations.
Book Synopsis Silicon-Molecular Beam Epitaxy by : E. Kasper
Download or read book Silicon-Molecular Beam Epitaxy written by E. Kasper and published by CRC Press. This book was released on 2018-05-04 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Book Synopsis Gallium Arsenide and Related Compounds 1993, Proceedings of the 20th INT Symposium, 29 August - 2 September 1993, Freiburg im Braunschweig, Germany by : Günter Weimann
Download or read book Gallium Arsenide and Related Compounds 1993, Proceedings of the 20th INT Symposium, 29 August - 2 September 1993, Freiburg im Braunschweig, Germany written by Günter Weimann and published by CRC Press. This book was released on 1994-01-01 with total page 880 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.
