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Intersubband Transitions In Ingaas Inalas Multiple Quantum Wells Grown On Inp Substrate
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Book Synopsis Intersubband Transitions in InGaAs/InAlAs Multiple Quantum Wells Grown on InP Substrate by : Qiaoying Zhou
Download or read book Intersubband Transitions in InGaAs/InAlAs Multiple Quantum Wells Grown on InP Substrate written by Qiaoying Zhou and published by . This book was released on 2002 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: Intersubband transitions in In0.52Ga0.48As/In0.52Al0.48As multiple quantum wells grown on lattice matched InP substrates were investigated using Fourier transform infrared (FTIR) absorption and photoluminescence (FTPL) techniques. The well width was tailored to produce excited states resonant in the conduction band, at the edge of the conduction band, and confined in the quantum wells. Interband transitions were also probed using FTPL and optical absorption techniques. The FTPL spectra show that three interband transitions exist in the quantum well structures with well width larger than 30 A. The intersubband transitions in this class of quantum wells seem to withstand proton irradiation with doses higher than those used to deplete the intersubband transitions in the GaAs/AlGaAs multiple quantum wells.
Book Synopsis Quantum Well Intersubband Transition Physics and Devices by : Hui C. Liu
Download or read book Quantum Well Intersubband Transition Physics and Devices written by Hui C. Liu and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 573 pages. Available in PDF, EPUB and Kindle. Book excerpt: Intersubband transitions in quantum wells have attracted tremendous attention in recent years, mainly due to the promise of applications in the mid and far-infrared regions (2--20 mum). Many of the papers presented in Quantum Well Intersubband Transition Physics and Devices are on the basic linear intersubband transition processes, detector physics and detector application, reflecting the current state of understanding and detector applications, where highly uniform, large focal plane arrays have been demonstrated. Other areas are still in their early stages, including infrared modulation, harmonic generation and emission.
Book Synopsis Intersubband Transitions in Quantum Wells: Physics and Device Applications II by :
Download or read book Intersubband Transitions in Quantum Wells: Physics and Device Applications II written by and published by Academic Press. This book was released on 1999-10-25 with total page 257 pages. Available in PDF, EPUB and Kindle. Book excerpt: Intersubband Transitions in Quantum Wells: Physics and Device Applications II
Book Synopsis Intersubband Transitions in Quantum Wells: Physics and Devices by : Sheng S. Li
Download or read book Intersubband Transitions in Quantum Wells: Physics and Devices written by Sheng S. Li and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 221 pages. Available in PDF, EPUB and Kindle. Book excerpt: The International Workshop on "Intersubband Transitions in Quantum Wells:: Physics and Applications," was held at National Cheng Kung University, in Tainan, Taiwan, December 15-18, 1997. The objective of the Workshop is to facilitate the presentation and discussion of the recent results in theoretical, experimental, and applied aspects of intersubband transitions in quantum wells and dots. The program followed the tradition initiated at the 1991 conference in Cargese-France, the 1993 conference in Whistler, B. C. Canada, and the 1995 conference in Kibbutz Ginosar, Israel. Intersubband transitions in quantum wells and quantum dots have attracted considerable attention in recent years, mainly due to the promise of various applications in the mid- and far-infrared regions (2-30 J. lm). Over 40 invited and contributed papers were presented in this four-day workshop, with topics covered most aspects of the intersubband transition phenomena including: the basic intersubband transition processes, multiquantum well infrared photodetector (QWIP) physics, large format (640x480) GaAs QWIP (with 9. 0 J. lffi cutoff) focal plane arrays (FPAs) for IR imaging camera applications, infrared modulation, intersubband emission including mid- and long- wavelength quantum cascade (QC) lasers such as short (A. "" 3. 4 J. lm) and long (A. "" 11. 5 J. lm) wavelength room temperature QC lasers, quantum fountain intersubband laser at 15. 5 J. lm wavelength in GaAs/AIGaAs quantum well, harmonic generation and nonlinear effects, ultra-fast phenomena such as terahertz (THz) intersubband emission and detection. The book divides into five Chapters.
Book Synopsis Near-infrared Intersubband Transitions in InGaAs AlAs InAlAs Double Quantum Wells by :
Download or read book Near-infrared Intersubband Transitions in InGaAs AlAs InAlAs Double Quantum Wells written by and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Intersubband Transitions in Quantum Wells by : Emmanuel Rosencher
Download or read book Intersubband Transitions in Quantum Wells written by Emmanuel Rosencher and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 341 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the lectures delivered at the NATO Advanced Research Workshop on the "Intersubband Transistions in Quantum Wells" held in Cargese, France, between the t 9 h and the 14th of September 1991. The urge for this Workshop was justified by the impressive growth of work dealing with this subject during the last two or three years. Indeed, thanks to recent progresses of epitaxial growth techniques, such as Molecular Beam Epitaxy, it is now possible to realize semiconductor layers ( e.g. GaAs) with thicknesses controlled within one atomic layer, sandwiched between insulating layers (e.g. AlGaAs). When the semiconducting layer is very thin, i.e. less than 15 nm, the energy of the carriers corresponding to their motion perpendicular to these layers is quantized, forming subbands of allowed energies. Because of the low effective masses in these semiconducting materials, the oscillator strengths corresponding to intersubband transitions are extremely large and quantum optical effects become giant in the 5 - 20 ~ range: photoionization, optical nonlinearities, ... Moreover, a great theoretical surprise is that - thanks to the robustness of the effective mass theory - these quantum wells are a real life materialization of our old text book one-dimensional quantum well ideal. Complex physical phenomena may then be investigated on a simple model system.
Book Synopsis Compound Semiconductor Integrated Circuits by : Tho T. Vu
Download or read book Compound Semiconductor Integrated Circuits written by Tho T. Vu and published by World Scientific. This book was released on 2003-01-01 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the book version of a special issue of the International Journal of High Speed Electronics and Systems, reviewing recent work in the field of compound semiconductor integrated circuits. There are fourteen invited papers covering a wide range of applications, frequencies and materials. These papers deal with digital, analog, microwave and millimeter-wave technologies, devices and integrated circuits for wireline fiber-optic lightwave transmissions, and wireless radio-frequency microwave and millimeter-wave communications. In each case, the market is young and experiencing rapid growth for both commercial and millitary applications. Many new semiconductor technologies compete for these new markets, leading to an alphabet soup of semiconductor materials described in these papers. The book also includes three papers focused on radiation effects and reliability in III-V semiconductor electronics, which are useful for reference and future directions. Moreover, reliability is covered in several papers separately for certain process technologies. Contents: Present and Future of High-Speed Compound Semiconductor IC''s (T Otsuji); The Transforming MMIC (E J Martinez); Distributed Amplifier for Fiber-Optic Communication Systems (H Shigematsu et al.); Microwave GaN-Based Power Transistors on Large-Scale Silicon Wafers (S Manohar et al.); Radiation Effects in High Speed III-V Integrated Circuits (T R Weatherford); Radiation Effects in III-V Semiconductor Electronics (B D Weaver et al.); Reliability and Radiation Hardness of Compound Semiconductors (S A Kayali & A H Johnston); and other papers. Readership: Engineers, scientists and graduate students working on high speed electronics and systems, and in the area of compound semiconductor integrated circuits.
Book Synopsis Progress in Semiconductor Materials for Optoelectronic Applications: Volume 692 by : Eric D. Jones
Download or read book Progress in Semiconductor Materials for Optoelectronic Applications: Volume 692 written by Eric D. Jones and published by . This book was released on 2002-06-19 with total page 768 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Book Synopsis Proceedings of the Sixth International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications by : Sheng S. Li
Download or read book Proceedings of the Sixth International Symposium on Long Wavelength Infrared Detectors and Arrays: Physics and Applications written by Sheng S. Li and published by The Electrochemical Society. This book was released on 1999 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Semiconductor Materials for Optoelectronics and LTMBE Materials by : J.P. Hirtz
Download or read book Semiconductor Materials for Optoelectronics and LTMBE Materials written by J.P. Hirtz and published by Elsevier. This book was released on 2016-07-29 with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt: These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics. Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.
Book Synopsis Quantum Well Above-barrier States and Short Wavelength Intersubband Transitions in InGaAs/A1GaAs Quantum Wells by : Baegin Sung
Download or read book Quantum Well Above-barrier States and Short Wavelength Intersubband Transitions in InGaAs/A1GaAs Quantum Wells written by Baegin Sung and published by . This book was released on 1998 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Progress in Semiconductors II - Electronic and Optoelectronic Applications: Volume 744 by : B. D. Weaver
Download or read book Progress in Semiconductors II - Electronic and Optoelectronic Applications: Volume 744 written by B. D. Weaver and published by . This book was released on 2003-04-16 with total page 712 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent years have witnessed dramatic success in the development of semiconductor materials and related quantum structures for applications in electronics and optoelectronics. Progress has also been made in manufacturable (low cost, high volume) growth and processing of semiconductor materials for such device structures. Novel approaches have been proposed to integrate compound semiconductor devices with conventional silicon processing. This book provides a comprehensive overview of the progress on growth, properties and processing of semiconductor materials and quantum structures, as well to underscore the progress on devices such as transistors, light sources, detectors and modulators. Brought to maturity, these devices will likely see widespread application in infrared imaging, chemical and biological sensing, surveillance, short links, space-based applications, solar cells, high-bandwidth communications, and more. Topics include: electronic devices; Si/Ge devices and technology; zinc oxide and related compounds; emitters, lasers and photovoltaics; nanostructures; innovative materials and devices; detectors; and III-nitride materials and devices.
Book Synopsis Intersubband Transitions in Quantum Wells: Physics and Devices by : Sheng S. Li
Download or read book Intersubband Transitions in Quantum Wells: Physics and Devices written by Sheng S. Li and published by Springer. This book was released on 1998-07-31 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of Intersubband Transitions in Quantum Wells: Physics and Devices is to facilitate the presentation and discussion of the recent results in theoretical, experimental, and applied aspects of intersubband transitions in quantum wells and dots. This reference work is based on the International Workshop that was held at National Cheng Kung University in Tainan, Taiwan in December 15-18, 1997. Intersubband transitions in quantum wells and quantum dots have attracted considerable attention in recent years, mainly due to the promise of various applications in the mid- and far-infrared regions (2-30 mum). Over 40 invited and contributed papers were presented in this four-day workshop, with topics covering most aspects of the intersubband transition phenomena including: the basic intersubband transition process, multiquantum well infrared photodetector (QWIP) physics, large format (640×480) GaAs QWIP (with 9.0 mum cutoff) focal plane arrays (FPAs) for IR imaging camera applications, infrared modulation, intersubband emission including mid- and long-wavelength quantum cascade (QC) lasers such as short (lambda = 3.4 mum) and long (lambda = 11.5 mum) wavelength room temperature QC lasers, quantum fountain intersubband laser at 15.5 mum wavelength in GaAs/AIGaAs quantum well, harmonic generation and nonlinear effects, ultra-fast phenomena such as terahertz (THz) intersubband emission and detection. Intersubband Transitions in Quantum Wells: Physics and Devices will be of interest to researchers from universities and industrial laboratories working on physics and devices of nanostructures, and researchers in the infrared (IR) community.
Book Synopsis Growth of InGaAs/InP Multiple Quantum Well by Metalorganic Vapor Phase Epitaxy by : Xiaosong Jiang
Download or read book Growth of InGaAs/InP Multiple Quantum Well by Metalorganic Vapor Phase Epitaxy written by Xiaosong Jiang and published by . This book was released on 1994 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Nonlinear Optics in Semiconductors II by :
Download or read book Nonlinear Optics in Semiconductors II written by and published by Academic Press. This book was released on 1998-11-09 with total page 351 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Book Synopsis Research in Materials by : Massachusetts Institute of Technology
Download or read book Research in Materials written by Massachusetts Institute of Technology and published by . This book was released on 1995 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ceramic Abstracts by : American Ceramic Society
Download or read book Ceramic Abstracts written by American Ceramic Society and published by . This book was released on 1995 with total page 1150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
