Integration of Multi-functional Oxide Thin Film Heterostructures with III-V Semiconductors

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ISBN 13 :
Total Pages : 250 pages
Book Rating : 4.:/5 (15 download)

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Book Synopsis Integration of Multi-functional Oxide Thin Film Heterostructures with III-V Semiconductors by : Md Shafiqur Rahman

Download or read book Integration of Multi-functional Oxide Thin Film Heterostructures with III-V Semiconductors written by Md Shafiqur Rahman and published by . This book was released on 2017 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt: Integration of multi-functional oxide thin films with semiconductors has attracted considerable attention in recent years due to their potential applications in sensing and logic functionalities that can be incorporated in future system-on-a-chip devices. III-V semiconductor, for example, GaAs, have higher saturated electron velocity and mobility allowing transistors based on GaAs to operate at a much higher frequency with less noise compared to Si. In addition, because of its direct bandgap a number of efficient optical devices are possible and by oxide integrating with other III-V semiconductors the wavelengths can be made tunable through hetero-engineering of the bandgap. This study, based on the use of SrTiO3 (STO) films grown on GaAs (001) substrates by molecular beam epitaxy (MBE) as an intermediate buffer layer for the hetero-epitaxial growth of ferromagnetic La0.7Sr0.3MnO3 (LSMO) and room temperature multiferroic BiFeO3 (BFO) thin films and superlattice structures using pulsed laser deposition (PLD). The properties of the multilayer thin films in terms of growth modes, lattice spacing/strain, interface structures and texture were characterized by the in-situ reflection high energy electron diffraction (RHEED). The crystalline quality and chemical composition of the complex oxide heterostructures were investigated by a combination of X-ray diffraction (XRD) and X-ray photoelectron absorption spectroscopy (XPS). Surface morphology, piezo-response with domain structure, and ferroelectric switching observations were carried out on the thin film samples using a scanning probe microscope operated as a piezoresponse force microscopy (PFM) in the contact mode. The magnetization measurements with field cooling exhibit a surprising increment in magnetic moment with enhanced magnetic hysteresis squareness. This is the effect of exchange interaction between the antiferromagnetic BFO and the ferromagnetic LSMO at the interface. The integration of BFO materials with LSMO on GaAs substrate also facilitated the demonstration of resistive random access memory (ReRAM) devices which can be faster with lower energy consumption compared to present commercial technologies. Ferroelectric switching observations using piezoresponse force microscopy show polarization switching demonstrating its potential for read-write operation in NVM devices. The ferroelectric and electrical characterization exhibit strong resistive switching with low SET/RESET voltages. Furthermore, a prototypical epitaxial field effect transistor based on multiferroic BFO as the gate dielectric and ferromagnetic LSMO as the conducting channel was also demonstrated. The device exhibits a modulation in channel conductance with high ON/OFF ratio. The measured nanostructure and physical-compositional results from the multilayer are correlated with their corresponding dielectric, piezoelectric, and ferroelectric properties. These results provide an understanding of the heteroepitaxial growth of ferroelectric (FE)-antiferromagnetic (AFM) BFO on ferromagnetic LSMO as a simple thin film or superlattice structure, integrated on STO buffered GaAs (001) with full control over the interface structure at the atomic-scale. This work also represents the first step toward the realization of magnetoelectronic devices integrated with GaAs (001).

Integration of Functional Oxides with Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 146149320X
Total Pages : 284 pages
Book Rating : 4.4/5 (614 download)

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Book Synopsis Integration of Functional Oxides with Semiconductors by : Alexander A. Demkov

Download or read book Integration of Functional Oxides with Semiconductors written by Alexander A. Demkov and published by Springer Science & Business Media. This book was released on 2014-02-20 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the basic physical principles of the oxide/semiconductor epitaxy and offers a view of the current state of the field. It shows how this technology enables large-scale integration of oxide electronic and photonic devices and describes possible hybrid semiconductor/oxide systems. The book incorporates both theoretical and experimental advances to explore the heteroepitaxy of tuned functional oxides and semiconductors to identify material, device and characterization challenges and to present the incredible potential in the realization of multifunctional devices and monolithic integration of materials and devices. Intended for a multidisciplined audience, Integration of Functional Oxides with Semiconductors describes processing techniques that enable atomic-level control of stoichiometry and structure and reviews characterization techniques for films, interfaces and device performance parameters. Fundamental challenges involved in joining covalent and ionic systems, chemical interactions at interfaces, multi-element materials that are sensitive to atomic-level compositional and structural changes are discussed in the context of the latest literature. Magnetic, ferroelectric and piezoelectric materials and the coupling between them will also be discussed. GaN, SiC, Si, GaAs and Ge semiconductors are covered within the context of optimizing next-generation device performance for monolithic device processing.

Multifunctional Oxide Heterostructures

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Publisher : Oxford University Press
ISBN 13 : 0199584125
Total Pages : 429 pages
Book Rating : 4.1/5 (995 download)

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Book Synopsis Multifunctional Oxide Heterostructures by : Evgeny Y. Tsymbal

Download or read book Multifunctional Oxide Heterostructures written by Evgeny Y. Tsymbal and published by Oxford University Press. This book was released on 2012-08-30 with total page 429 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume explores the rapidly developing field of oxide thin-films and heterostructures, which exhibit unusual physical properties interesting from the fundamental point of view and for device application. The chapters discuss topics that represent some of the key innovations in the field over recent years.

Integration of Functional Oxide Thin Film Heterostructures with Silicon (100) Substrates

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Publisher :
ISBN 13 :
Total Pages : 122 pages
Book Rating : 4.:/5 (642 download)

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Book Synopsis Integration of Functional Oxide Thin Film Heterostructures with Silicon (100) Substrates by : Ravi Aggarwal

Download or read book Integration of Functional Oxide Thin Film Heterostructures with Silicon (100) Substrates written by Ravi Aggarwal and published by . This book was released on 2010 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Thin Films and Heterostructures for Oxide Electronics

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Publisher : Springer Science & Business Media
ISBN 13 : 0387260897
Total Pages : 416 pages
Book Rating : 4.3/5 (872 download)

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Book Synopsis Thin Films and Heterostructures for Oxide Electronics by : Satishchandra B. Ogale

Download or read book Thin Films and Heterostructures for Oxide Electronics written by Satishchandra B. Ogale and published by Springer Science & Business Media. This book was released on 2005-11-21 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: Oxides form a broad subject area of research and technology development which encompasses different disciplines such as materials science, solid state chemistry, physics etc. The aim of this book is to demonstrate the interplay of these fields and to provide an introduction to the techniques and methodologies involving film growth, characterization and device processing. The literature in this field is thus fairly scattered in different research journals covering one or the other aspect of the specific activity. This situation calls for a book that will consolidate this information and thus enable a beginner as well as an expert to get an overall perspective of the field, its foundations, and its projected progress.

Novel Compound Semiconductor Nanowires

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Publisher : CRC Press
ISBN 13 : 9814745774
Total Pages : 549 pages
Book Rating : 4.8/5 (147 download)

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Book Synopsis Novel Compound Semiconductor Nanowires by : Fumitaro Ishikawa

Download or read book Novel Compound Semiconductor Nanowires written by Fumitaro Ishikawa and published by CRC Press. This book was released on 2017-10-17 with total page 549 pages. Available in PDF, EPUB and Kindle. Book excerpt: One dimensional electronic materials are expected to be key components owing to their potential applications in nanoscale electronics, optics, energy storage, and biology. Besides, compound semiconductors have been greatly developed as epitaxial growth crystal materials. Molecular beam and metalorganic vapor phase epitaxy approaches are representative techniques achieving 0D–2D quantum well, wire, and dot semiconductor III-V heterostructures with precise structural accuracy with atomic resolution. Based on the background of those epitaxial techniques, high-quality, single-crystalline III-V heterostructures have been achieved. III-V Nanowires have been proposed for the next generation of nanoscale optical and electrical devices such as nanowire light emitting diodes, lasers, photovoltaics, and transistors. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping, which can be introduced into the nanowire system. The growth can extend the functions of the material systems through the introduction of elements with large miscibility gap, or, alternatively, by the formation of hybrid heterostructures between semiconductors and another material systems. This book reviews recent progresses of such novel III-V semiconductor nanowires, covering a wide range of aspects from the epitaxial growth to the device applications. Prospects of such advanced 1D structures for nanoscience and nanotechnology are also discussed.

III-V Compound Semiconductors

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Publisher : CRC Press
ISBN 13 : 1439815232
Total Pages : 588 pages
Book Rating : 4.4/5 (398 download)

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Book Synopsis III-V Compound Semiconductors by : Tingkai Li

Download or read book III-V Compound Semiconductors written by Tingkai Li and published by CRC Press. This book was released on 2016-04-19 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more

Heteroepitaxy on Compliant Substrates for Vertical and Horizontal Integration of Multi-Functional Devices

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Publisher :
ISBN 13 :
Total Pages : 49 pages
Book Rating : 4.:/5 (946 download)

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Book Synopsis Heteroepitaxy on Compliant Substrates for Vertical and Horizontal Integration of Multi-Functional Devices by :

Download or read book Heteroepitaxy on Compliant Substrates for Vertical and Horizontal Integration of Multi-Functional Devices written by and published by . This book was released on 2001 with total page 49 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report presents the results of research on compliant substrate behavior in III-V semiconductors grown by molecular beam epitaxy (MBE) on thin (50-80A) InGaAs layers on GaAs, and in II-VI semiconductors (HgCdTe, CdTe, ZnTe) grown on thin Si(211) layers on Si(100). A comprehensive experimental study was conducted utilizing spectroscopic ellipsometry, transmission electron microscopy, and atomic force microscopy at various stages in the fabrication and processing of the compliant layers and during MBE growth on those layers. Contrary to earlier reports by other investigators, we obtained no evidence for defect reduction or solid phase atomic rearrangement due to substrate compliancy in either of the III-V or II-V systems studied here. We conclude that the early reports of compliancy may have been erroneous interpretation of limited experimental data. Indeed, a theoretical consideration of stress relief mechanics in semiconductor thin films suggests that many of the proposed compliancy mechanisms are not feasible. Although no evidence of substrate compliancy was obtained, we were nevertheless successful in growing high quality II-VI layers by MBE on thin Si(211) layers bonded to Si(100) substrates. This has important implications for monolithic integration of HgCdTe infrared focal plane arrays with readout circuitry fabricated in Si(100) substrates.

High Quality III-V Semiconductor Integration on Si Using Van Der Waals Layered Material Buffer for Photonic Integration Applications

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Publisher :
ISBN 13 :
Total Pages : 126 pages
Book Rating : 4.:/5 (14 download)

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Book Synopsis High Quality III-V Semiconductor Integration on Si Using Van Der Waals Layered Material Buffer for Photonic Integration Applications by : Yazeed Alaskar

Download or read book High Quality III-V Semiconductor Integration on Si Using Van Der Waals Layered Material Buffer for Photonic Integration Applications written by Yazeed Alaskar and published by . This book was released on 2016 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: Integration of arsenide-based III-V compound semiconductors on silicon (Si) has been the focus of significant research to integrate light sources on silicon, enabling an integrated optical solution for chip-chip interconnects in future computing systems, and to make cost-effective and efficient multi-junction solar cells on silicon substrates. The primary obstacle to success is the lattice and thermal expansion mismatches between the semiconductor compounds of interest and the silicon substrates. In this thesis, a novel heteroepitaxial growth technique, quasi van der Waals epitaxy, promises the ability to grow high quality As-based semiconductor compounds on silicon using a two-dimensional (2D) layered material as a buffer layer, where the van der Waals force is dominant between the layers, thus reducing the strain arising from lattice and thermal expansion coefficient mismatches. The main body of the thesis is structured in three parts. First, theoretical investigations of quasi van der Waals heteroepitaxial growth of arsenide-based III-V compounds on layered materials, such as graphene, Indium Selenide (InSe), Boron Nitride (h-BN) and Molybdenum Selenide (MoS2), where the surface free energy and adsorption energies of Ga, Al, In and As are calculated using DFT calculations. Second, experimental demonstration of a novel low temperature technique for quasi van der Waals heteroepitaxial growth of arsenide based III-V compounds on graphene using Molecular Beam Epitaxy (MBE) is described. Third, using Indium Selenide (InSe) as a buffer layer due to its relatively high surface free energy and stability at high growth temperatures, a high quality and defect-free InGaAs/GaAs double heterostrucure (DH) is integrated onto a GaAs/ Si structure. The crystal quality of GaAs shows the lowest defect density of GaAs grown directly on Si to date, making it a remarkable step toward obtaining optical emitters on silicon substatres. The optical properties of this heterostructure were characterized using micro-photoluminescence ( -PL), demonstrating room-temperature light emission out of the InGaAs/GaAs heterostructure integrated on thin GaAs on InSe/Si. Planar growth of GaAs thin films on layered materials is a potential route towards heteroepitaxial integration of GaAs on silicon in the developing field of silicon photonics.

Thin Films and Heterostructures for Oxide Electronics

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Publisher : Springer
ISBN 13 : 9780387507057
Total Pages : 0 pages
Book Rating : 4.5/5 (7 download)

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Book Synopsis Thin Films and Heterostructures for Oxide Electronics by : Satishchandra B. Ogale

Download or read book Thin Films and Heterostructures for Oxide Electronics written by Satishchandra B. Ogale and published by Springer. This book was released on 2008-11-01 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Oxides form a broad subject area of research and technology development which encompasses different disciplines such as materials science, solid state chemistry, physics etc. The aim of this book is to demonstrate the interplay of these fields and to provide an introduction to the techniques and methodologies involving film growth, characterization and device processing. The literature in this field is thus fairly scattered in different research journals covering one or the other aspect of the specific activity. This situation calls for a book that will consolidate this information and thus enable a beginner as well as an expert to get an overall perspective of the field, its foundations, and its projected progress.

Strain-induced Phenomenon in Complex Oxide Thin Films

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Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (971 download)

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Book Synopsis Strain-induced Phenomenon in Complex Oxide Thin Films by : Ryan Haislmaier

Download or read book Strain-induced Phenomenon in Complex Oxide Thin Films written by Ryan Haislmaier and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Complex oxide materials wield an immense spectrum of functional properties such as ferroelectricity, ferromagnetism, magnetoelectricity, optoelectricity, optomechanical, magnetoresistance, superconductivity, etc. The rich coupling between charge, spin, strain, and orbital degrees of freedom makes this material class extremely desirable and relevant for next generation electronic devices and technologies which are trending towards nanoscale dimensions. Development of complex oxide thin film materials is essential for realizing their integration into nanoscale electronic devices, where theoretically predicted multifunctional capabilities of oxides could add tremendous value. Employing thin film growth strategies such as epitaxial strain and heterostructure interface engineering can greatly enhance and even unlock novel material properties in complex oxides, which will be the main focus of this work. However, physically incorporating oxide materials into devices remains a challenge. While advancements in molecular beam epitaxy (MBE) of thin film oxide materials has led to the ability to grow oxide materials with atomic layer precision, there are still major limitations such as controlling stoichiometric compositions during growth as well as creating abrupt interfaces in multi-component layered oxide structures. The work done in this thesis addresses ways to overcome these limitations in order to harness intrinsic material phenomena.The development of adsorption-controlled stoichiometric growth windows of CaTiO3 and SrTiO3 thin film materials grown by hybrid MBE where Ti is supplied using metal-organic titatnium tetraisopropoxide material is thoroughly outlined. These growth windows enable superior epitaxial strain-induced ferroelectric and dielectric properties to be accessed as demonstrated by chemical, structural, electrical, and optical characterization techniques. For tensile strained CaTiO3 and compressive strained SrTiO3 films, the critical effects of nonstoichiometry on ferroelectric properties are investigated, where enhanced ferroelectric responses are only found for stoichiometric films grown inside of the growth windows, whereas outside of the optimal growth window conditions, ferroelectric properties are greatly deteriorated and eventually disappear for highly nonstoichiometric film compositions. Utilizing these stoichiometric growth windows, high temperature polar phase transitions are discovered for compressively strained CaTiO3 films with transition temperatures in excess of 700 K, rendering this material as a strong candidate for high temperature electronic applications. Beyond the synthesis of single phase materials using hybrid MBE, a methodology is presented for constructing layered (SrTiO3)n/(CaTiO3)n superlattice structures, where precise control over the unit cell layering thickness (n) is demonstrated using in-situ reflection high energy electron diffraction. The effects of interface roughness and layering periodicity (n) on the strain-induced ferroelectric properties for a series of n=1-10 (SrTiO3)n/(CaTiO3)n superlattice films are investigated. It is found that the stabilization of a ferroelectric phase is independent of n, but is however strongly dominated by the degree of interface roughness which is quantified by measuring the highest nth order X-ray diffraction peak splitting of each superlattice film. A counter-intuitive realization is made whereby a critical amount of interface roughness is required in order to enable the formation of the predicted strain-stabilized ferroelectric phase, whereas sharp interfaces actually suppress this ferroelectric phase from manifesting. It is shown how high-quality complex oxide superlattices can be constructed using hybrid MBE technique, allowing the ability to control layered materials at the atomic scale. Furthermore, a detailed growth methodology is provided for constructing a layered n=4 SrO(SrTiO3)n Ruddlesden-Popper (RP) phase by hybrid MBE, where the ability to deposit single monolayers of SrO and TiO2 is utilized to build the RP film structure over a time period of 5 hours. This is the first time that a thin film RP phase has been grown using hybrid MBE, where an a stable control over the fluxes is demonstrated during relatively long time periods of growth, which advantageously facilitates the synthesis of high-quality RP materials with excellent structural and chemical homogeneity.Additionally, this work demonstrates some major advancements in optical second harmonic generation (SHG) characterization techniques of ferroelectric thin film materials. The SHG characterization techniques developed here proved to be the bread-and-butter for most of the work performed in this thesis, providing a powerful tool for identifying the existence of strain-induced ferroelectric phases, including their temperature dependence and polar symmetry. The work presented in this dissertation will hopefully provide a preliminary road map for future hybrid MBE growers, scientists and researchers, to develop and investigate epitaxial strain and heterostructure layering induced phenomena in other complex oxide systems.

Oxide Thin Films, Multilayers, and Nanocomposites

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Publisher : Springer
ISBN 13 : 3319144782
Total Pages : 320 pages
Book Rating : 4.3/5 (191 download)

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Book Synopsis Oxide Thin Films, Multilayers, and Nanocomposites by : Paolo Mele

Download or read book Oxide Thin Films, Multilayers, and Nanocomposites written by Paolo Mele and published by Springer. This book was released on 2015-03-26 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive overview of the science of nanostructured oxides. It details the fundamental techniques and methodologies involved in oxides thin film and bulk growth, characterization and device processing, as well as heterostructures. Both, experts in oxide nanostructures and experts in thin film heteroepitaxy, contribute the interactions described within this book.

Functional Oxide Heterostructures on Semiconductors

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Publisher :
ISBN 13 :
Total Pages : 312 pages
Book Rating : 4.:/5 (865 download)

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Book Synopsis Functional Oxide Heterostructures on Semiconductors by : Hosung Seo

Download or read book Functional Oxide Heterostructures on Semiconductors written by Hosung Seo and published by . This book was released on 2013 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Complex oxides exhibiting a wide variety of novel functional properties such as ferromagnetism and ferroelectricity have been extensively studied during the past decades. Recent advances in the field of oxide heteroepitaxy have made it possible to create and control hybrid oxide heterostructures with abrupt epitaxial interfaces. The oxide heteroepitaxy with the capability of controlling interface composition, strain, length scales, etc. has opened the totally new and exciting scientific avenue and has offered potential device applications to be explored. Epitaxial integration of functional oxides on semiconductor such as Si (001) and Ge(001) is of great interest, as it potentially leads to further technological development of these interesting oxide systems. In this dissertation, using density functional theory we explore physics and chemistry of novel oxide heterostructures and issues related to the integration of functional oxides on semiconductors. Oxide materials that are studied in this dissertation include polar LaAlO3, high-k dielectric SrTiO3, photocatalytic anatase TiO2 and CoO, and strongly correlated magnetic oxide LaCoO3.

Heteroepitaxial Growth of III-V Semiconductors on 2D Materials

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (115 download)

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Book Synopsis Heteroepitaxial Growth of III-V Semiconductors on 2D Materials by : Yazeed Alaskar

Download or read book Heteroepitaxial Growth of III-V Semiconductors on 2D Materials written by Yazeed Alaskar and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Quasi van der Waals epitaxy (QvdWE) of III-V semiconductors on two-dimensional layered material, such as graphene, is discussed. Layered materials are used as a lattice mismatch/thermal expansion coefficient mismatch-relieving layer to integrate III-V semiconductors on any arbitrary substrates. In this chapter, the epitaxial growth of both III-V nanowires and thin films on two-dimensional layered materials is presented. Also, the growth challenges of thin film on two-dimensional materials using QvdWE are discussed through density functional theory calculations. Furthermore, optoelectronic devices of III-V semiconductors integrated on two-dimensional layered material based on QvdWE are overviewed to prove the future potential and importance of such type of epitaxy.

Design and Fabricate Multifunctional Complex Oxide Thin Films and Heterostructures with Optimized Multifunctionalities

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Publisher :
ISBN 13 : 9781339035086
Total Pages : 103 pages
Book Rating : 4.0/5 (35 download)

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Book Synopsis Design and Fabricate Multifunctional Complex Oxide Thin Films and Heterostructures with Optimized Multifunctionalities by : Xing Xu

Download or read book Design and Fabricate Multifunctional Complex Oxide Thin Films and Heterostructures with Optimized Multifunctionalities written by Xing Xu and published by . This book was released on 2015 with total page 103 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Oxide Thin Films and Heterostructures for Advanced Information and Energy Technologies

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ISBN 13 :
Total Pages : 63 pages
Book Rating : 4.:/5 (882 download)

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Book Synopsis Oxide Thin Films and Heterostructures for Advanced Information and Energy Technologies by : Gervasi Herranz

Download or read book Oxide Thin Films and Heterostructures for Advanced Information and Energy Technologies written by Gervasi Herranz and published by . This book was released on 2013 with total page 63 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Functional Oxide Thin Films and Heterostructures for Innovative Devices

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Publisher :
ISBN 13 : 9781510803343
Total Pages : 11 pages
Book Rating : 4.8/5 (33 download)

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Book Synopsis Functional Oxide Thin Films and Heterostructures for Innovative Devices by : S. Fujita

Download or read book Functional Oxide Thin Films and Heterostructures for Innovative Devices written by S. Fujita and published by . This book was released on 2013 with total page 11 pages. Available in PDF, EPUB and Kindle. Book excerpt: