Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Inp Based Heterojunction Bipolar Transistors For High Speed And Rf Power Applications
Download Inp Based Heterojunction Bipolar Transistors For High Speed And Rf Power Applications full books in PDF, epub, and Kindle. Read online Inp Based Heterojunction Bipolar Transistors For High Speed And Rf Power Applications ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Book Synopsis SiGe, GaAs, and InP Heterojunction Bipolar Transistors by : Jiann S. Yuan
Download or read book SiGe, GaAs, and InP Heterojunction Bipolar Transistors written by Jiann S. Yuan and published by Wiley-Interscience. This book was released on 1999-04-12 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, comprehensive guide to heterojunction bipolar transistor technology. Owing to their superior performance in microwave and millimeter-wave applications, heterojunction bipolar transistors (HBTs) have become a major force in mobile and wireless communications. This book offers an integrated treatment of SiGe, GaAs, and InP HBTs, presenting a much-needed overview of HBTs based on different materials systems-their fabrication, analysis, and testing procedures. Highly respected expert Jiann S. Yuan discusses in depth the dc and RF performance and modeling of HBT devices, including simulation, thermal instability, reliability, low-temperature and high-temperature performance, and HBT analog and digital circuits. He provides step-by-step presentations of HBT materials-including Si HBTs and III-V and IV-IV compound HBTs, which are rarely described in the literature. Also covered are device and circuit interaction as well as specific high-speed devices in mobile and wireless communications. This immensely useful guide to a rapidly expanding field includes more than 200 figures, tables of different material systems in terms of their physical parameters, and up-to-date experimental results culled from the latest research. An essential resource for circuit and device designers in the semiconductor industry, SiGe, GaAs, and InP Heterojunction Bipolar Transistors is also useful for graduate students in electrical engineering, applied physics, and materials science.
Book Synopsis State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX) by : C. R. Abernathy
Download or read book State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX) written by C. R. Abernathy and published by The Electrochemical Society. This book was released on 1999 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Heterojunction Bipolar Transistors for Circuit Design by : Jianjun Gao
Download or read book Heterojunction Bipolar Transistors for Circuit Design written by Jianjun Gao and published by John Wiley & Sons. This book was released on 2015-04-27 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods
Book Synopsis International Conference on Indium Phosphide and Related Materials by :
Download or read book International Conference on Indium Phosphide and Related Materials written by and published by . This book was released on 2000 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis RF Technologies for Low Power Wireless Communications by : Tatsuo Itoh
Download or read book RF Technologies for Low Power Wireless Communications written by Tatsuo Itoh and published by John Wiley & Sons. This book was released on 2004-04-07 with total page 482 pages. Available in PDF, EPUB and Kindle. Book excerpt: A survey of microwave technology tailored for professionals in wireless communications RF Technologies for Low Power Wireless Communications updates recent developments in wireless communications from a hardware design standpoint and offers specialized coverage of microwave technology with a focus on the low power wireless units required in modern wireless systems. It explores results of recent research that focused on a holistic, integrated approach to the topics of materials, devices, circuits, modulation, and architectures rather than the more traditional approach of research into isolated topical areas. Twelve chapters deal with various fundamental research aspects of low power wireless electronics written by world-class experts in each field. The first chapter offers an overview of wireless architecture and performance, followed by detailed coverage of: Advanced GaAs-based HBT designs InP-based devices and circuits Si/SiGe HBT technology Noise in GaN devices Power amplifier architectures and nonlinearities Planar-oriented components MEMS and micromachined components Resonators, filters, and low-noise oscillators Antennas Transceiver front-end architectures With a clear focus and expert contributors, RF Technologies for Low Power Wireless Communications will be of interest to a wide range of electrical engineering disciplines working in wireless technologies.
Book Synopsis InP-based Materials and Heterostructure Devices, and the Applications in Monolithic Integrated NPN and PNP HBT Circuits by : Delong Cui
Download or read book InP-based Materials and Heterostructure Devices, and the Applications in Monolithic Integrated NPN and PNP HBT Circuits written by Delong Cui and published by . This book was released on 2001 with total page 658 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics V by : H. M. Ng
Download or read book State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics V written by H. M. Ng and published by The Electrochemical Society. This book was released on 2004 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems: Technology, Modeling and Circuit Applications by : Niccolò Rinaldi
Download or read book Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems: Technology, Modeling and Circuit Applications written by Niccolò Rinaldi and published by River Publishers. This book was released on 2018-03-15 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becoming an ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000's. Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration. Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Book Synopsis Seventh International Conference on Indium Phosphide and Related Materials by :
Download or read book Seventh International Conference on Indium Phosphide and Related Materials written by and published by . This book was released on 1995 with total page 892 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August-2 September, 1995 by : Institute of Physics Conference
Download or read book Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August-2 September, 1995 written by Institute of Physics Conference and published by CRC Press. This book was released on 2020-10-28 with total page 1352 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.
Book Synopsis Comprehensive Semiconductor Science and Technology by :
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Book Synopsis Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August-2 September, 1995 by : Woo
Download or read book Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August-2 September, 1995 written by Woo and published by CRC Press. This book was released on 1996-04-25 with total page 1352 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.
Book Synopsis Current Trends in Heterojunction Bipolar Transistors by : M. F. Chang
Download or read book Current Trends in Heterojunction Bipolar Transistors written by M. F. Chang and published by World Scientific. This book was released on 1996 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.
Book Synopsis State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXI) by : D. N. Buckley
Download or read book State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXI) written by D. N. Buckley and published by The Electrochemical Society. This book was released on 1999 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications by : N. Mohankumar
Download or read book Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications written by N. Mohankumar and published by CRC Press. This book was released on 2021-09-28 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt: High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance including InAs-based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs-based SG and DG-HEMT is also discussed. The main goal of this book is to characterize the InAs device to achieve terahertz frequency regime with proper device parameters. Features: Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs. Covers novel indium arsenide architectures for achieving terahertz frequencies Discusses impact of device parameters on frequency response Illustrates noise characterization of optimized indium arsenide HEMTs Introduces terahertz electronics including sources for terahertz applications. This book is of special interest to researchers and graduate students in Electronics Engineering, High Electron Mobility Transistors, Semi-conductors, Communications, and Nanodevices.
Book Synopsis State-of-the-Art Program on Compound Semiconductors XL : (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II by : D. N. Buckley
Download or read book State-of-the-Art Program on Compound Semiconductors XL : (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II written by D. N. Buckley and published by The Electrochemical Society. This book was released on 2004 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Compound Semiconductor Power Transistors II and by : R. F. Kopf
Download or read book Compound Semiconductor Power Transistors II and written by R. F. Kopf and published by The Electrochemical Society. This book was released on 2000 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: