Influence Of Mg And In On Defect Formation In Gan Bulk And Mocvd Grown Samples

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Influence of Mg and In on Defect Formation in GaN ; Bulk and MOCVD Grown Samples

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ISBN 13 :
Total Pages : 5 pages
Book Rating : 4.:/5 (684 download)

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Download or read book Influence of Mg and In on Defect Formation in GaN ; Bulk and MOCVD Grown Samples written by and published by . This book was released on 2000 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transmission electron microscopy studies were applied to study GaN crystals doped with Mg. Both: bulk GaN:Mg crystals grown by a high pressure and high temperature process and those grown by metal-organic chemical-vapor deposition (MOCVD) have been studied. Structural dependence on growth polarity was observed in the bulk crystals. Spontaneous ordering (formation of polytypoids) was observed for growth in the N to Ga polar direction (N polarity). On the opposite site of the crystal (growth in the Ga to N polar direction) Mg-rich pyramidal defects with base on the basal planes and with walls inclined about 45O to these planes, empty inside (pinholes) were observed. A high concentration of these pyramidal defects was also observed in the MOCVD grown crystals. For samples grown with Mg delta doping planar defects were also observed especially at the early stages of growth followed by formation of pyramidal defects. TEM and x-ray studies of InxGa{sub 1-x}N crystals for the range of 28-45% nominal In concentration shows formation of two sub-layers: strained and relaxed, with a much lower In concentration in the strained layer. Layers with the highest In concentration were fully relaxed.

Archivgut aus Privatbesitz erworben von den bayerischen Staatsarchiven seit 1960

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ISBN 13 :
Total Pages : 20 pages
Book Rating : 4.:/5 (634 download)

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Download or read book Archivgut aus Privatbesitz erworben von den bayerischen Staatsarchiven seit 1960 written by and published by . This book was released on 1971 with total page 20 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Semiconducting and Insulating Materials ...

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ISBN 13 :
Total Pages : 384 pages
Book Rating : 4.3/5 (91 download)

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Download or read book Semiconducting and Insulating Materials ... written by and published by . This book was released on 2000 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Atomic Structure of Defects in GaN

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Author : Z. Liliental-Weber
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (316 download)

Book Synopsis Atomic Structure of Defects in GaN by : Z. Liliental-Weber

Download or read book Atomic Structure of Defects in GaN written by Z. Liliental-Weber and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Electron microscope phase images, produced by direct reconstruction of the scattered electron wave from a focal series of high-resolution images, were used to determine the nature of defects formed in GaN:Mg crystals. We studied bulk crystals grown from dilute solutions of atomic nitrogen in liquid gallium at high pressure and thin films grown by the MOCVD method. All the crystals were grown with Ga-polarity. In both types of samples the majority of defects were three dimensional Mg-rich hexagonal pyramids with bases on the (0001) plane and six walls on {l_brace}11{und 2}3{r_brace} planes seen in cross-section as triangulars. Some other defects appear in cross-section as trapezoidal (rectangular) defects as a result of presence of truncated pyramids. Both type of defects have hollow centers. They are decorated by Mg on all six side walls and a base. The GaN which grows inside on the defect walls shows polarity inversion. It is shown that change of polarity starts from the defect tip and propagates to the base, and that the stacking sequence changes from ab in the matrix to bc inside the defect. Exchange of the Ga sublattice with the N sublattice within the defect leads to 0.6 {+-} 0.2{angstrom} displacement between Ga sublattices outside and inside the defects. It is proposed that lateral overgrowth of the cavities formed within the defect takes place to restore matrix polarity on the defect base.

Atomic Structure of Pyramidal Defects in GaN

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (727 download)

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Download or read book Atomic Structure of Pyramidal Defects in GaN written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The atomic structure of the characteristic defects (Mg-rich hexagonal pyramids) in p-doped bulk and MOCVD GaN:Mg thin films grown with Ga polarity was determined at atomic resolution by direct reconstruction of the scattered electron wave in a transmission electron microscope. Small cavities were present inside the defects, confirmed also with positron annihilation. The inside walls of the cavities were covered by GaN of reverse polarity compared to the matrix. Defects in bulk GaN:Mg were almost one order of magnitude larger than in thin films. An exchange of Ga and N sublattices within the defect compared to the matrix lead to a 0.6 ± 0.2 Å displacement between the Ga sublattices of these two areas. A [1100]/3 shift with change from AB stacking in the matrix to BC within the entire pyramid was observed. Annealing of the MOCVD layers lead to slight increase of the defect size and an increase of the photoluminescence intensity. Positron annihilation confirms presence of vacancies of different sizes triggered by the Mg doping in as-grown samples and decrease of their concentration upon annealing at 900 and 1000 C.

Metalorganic Vapor Phase Epitaxy (MOVPE)

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Author : Stuart Irvine
Publisher : John Wiley & Sons
ISBN 13 : 1119313015
Total Pages : 582 pages
Book Rating : 4.1/5 (193 download)

Book Synopsis Metalorganic Vapor Phase Epitaxy (MOVPE) by : Stuart Irvine

Download or read book Metalorganic Vapor Phase Epitaxy (MOVPE) written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-10-07 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Technology of Gallium Nitride Crystal Growth

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Author : Dirk Ehrentraut
Publisher : Springer Science & Business Media
ISBN 13 : 3642048307
Total Pages : 337 pages
Book Rating : 4.6/5 (42 download)

Book Synopsis Technology of Gallium Nitride Crystal Growth by : Dirk Ehrentraut

Download or read book Technology of Gallium Nitride Crystal Growth written by Dirk Ehrentraut and published by Springer Science & Business Media. This book was released on 2010-06-14 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.

Pyramidal Defects in GaN

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ISBN 13 :
Total Pages : 5 pages
Book Rating : 4.:/5 (685 download)

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Download or read book Pyramidal Defects in GaN written by and published by . This book was released on 2005 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transmission electron microscopy (TEM) studies show formation of different types of Mg-rich defects in GaN. Types of defects strongly depend on crystal growth polarity. For bulk crystals grown with N-polarity, the planar defects are distributed at equal distances (20 unit cells of GaN). For growth with Ga-polarity (for both bulk and MOCVD grown crystals) a different type of defects have been found. These defects are three-dimensional Mg-rich hexagonal pyramids (or trapezoids) with their base on the (0001) plane and six walls formed on 1123 planes. The defects appear in [1120] and [1100] cross-section TEM micrographs as triangular and trapezoidal with sides inclined at 43 and 47 degrees to the base depending on the above observation directions, respectively. The dimension of these pyramids varies depending on growth method (50-1000 Angstrom), but the angle between the base and their sides remain the same. The direction from the tip of the pyramid to its base (and from the shorter to the longer base for trapezoidal defects) is along the Ga to N matrix bond direction. Analysis of the reconstructed exit wave phase image from the pyramid side indicates a shift of Ga atomic column positions from the matrix to the N position within the pyramid. In this way a 0.6"0.2 Angstrom displacement can be measured on the pyramid side between Ga positions in the matrix and within the pyramid.

III-Nitride Semiconductors

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Author : M.O. Manasreh
Publisher : Elsevier
ISBN 13 : 0080534449
Total Pages : 463 pages
Book Rating : 4.0/5 (85 download)

Book Synopsis III-Nitride Semiconductors by : M.O. Manasreh

Download or read book III-Nitride Semiconductors written by M.O. Manasreh and published by Elsevier. This book was released on 2000-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.

Springer Handbook of Electronic and Photonic Materials

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Author : Safa Kasap
Publisher : Springer
ISBN 13 : 331948933X
Total Pages : 1536 pages
Book Rating : 4.3/5 (194 download)

Book Synopsis Springer Handbook of Electronic and Photonic Materials by : Safa Kasap

Download or read book Springer Handbook of Electronic and Photonic Materials written by Safa Kasap and published by Springer. This book was released on 2017-10-04 with total page 1536 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second, updated edition of this essential reference book provides a wealth of detail on a wide range of electronic and photonic materials, starting from fundamentals and building up to advanced topics and applications. Its extensive coverage, with clear illustrations and applications, carefully selected chapter sequencing and logical flow, makes it very different from other electronic materials handbooks. It has been written by professionals in the field and instructors who teach the subject at a university or in corporate laboratories. The Springer Handbook of Electronic and Photonic Materials, second edition, includes practical applications used as examples, details of experimental techniques, useful tables that summarize equations, and, most importantly, properties of various materials, as well as an extensive glossary. Along with significant updates to the content and the references, the second edition includes a number of new chapters such as those covering novel materials and selected applications. This handbook is a valuable resource for graduate students, researchers and practicing professionals working in the area of electronic, optoelectronic and photonic materials.

Ceramic Abstracts

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ISBN 13 :
Total Pages : 500 pages
Book Rating : 4.3/5 (91 download)

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Download or read book Ceramic Abstracts written by and published by . This book was released on 2000 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt:

JJAP

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ISBN 13 :
Total Pages : 660 pages
Book Rating : 4.X/5 (6 download)

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Download or read book JJAP written by and published by . This book was released on 2002 with total page 660 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Chemical Abstracts

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ISBN 13 :
Total Pages : 2002 pages
Book Rating : 4.3/5 (91 download)

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Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Japanese Journal of Applied Physics

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ISBN 13 :
Total Pages : 466 pages
Book Rating : 4.3/5 (91 download)

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Download or read book Japanese Journal of Applied Physics written by and published by . This book was released on 2002 with total page 466 pages. Available in PDF, EPUB and Kindle. Book excerpt:

GaN and Related Materials

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Author : Stephen J. Pearton
Publisher : CRC Press
ISBN 13 : 1000448428
Total Pages : 556 pages
Book Rating : 4.0/5 (4 download)

Book Synopsis GaN and Related Materials by : Stephen J. Pearton

Download or read book GaN and Related Materials written by Stephen J. Pearton and published by CRC Press. This book was released on 2021-10-08 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.

International Aerospace Abstracts

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ISBN 13 :
Total Pages : 920 pages
Book Rating : 4.F/5 ( download)

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Download or read book International Aerospace Abstracts written by and published by . This book was released on 1998 with total page 920 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Electrical & Electronics Abstracts

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ISBN 13 :
Total Pages : 1948 pages
Book Rating : 4.3/5 (243 download)

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Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 1948 pages. Available in PDF, EPUB and Kindle. Book excerpt: