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Impact Ionization And High Field Transport In Semiconductors
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Book Synopsis Topics in High Field Transport in Semiconductors by : Kevin F. Brennan
Download or read book Topics in High Field Transport in Semiconductors written by Kevin F. Brennan and published by World Scientific. This book was released on 2001 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book examines some of the charge carrier transport issues encountered in the field of modern semiconductor devices and novel materials. Theoretical approaches to the understanding and modeling of the relevant physical phenomena, seen in devices that have very small spatial dimensions and that operate under high electric field strength, are described in papers written by leading experts and pioneers in this field. In addition, the book examines the transport physics encountered in novel materials such as wide band gap semiconductors (GaN, SiC, etc.) as well as organic semiconductors. Topics in High Field Transport in Semiconductors provides a comprehensive overview that will be beneficial to newcomers as well as engineers and researchers engaged in this exciting field. Contents: Foreword (K F Brennan & P P Ruden); Quantum Transport in Semiconductor Devices (D K Ferry et al.); Quantum Transport and Its Simulation with the Wigner-Function Approach (C Jacoboni et al.); Bloch Dynamics in Spatially Local Inhomogeneous Electric Fields (J P Reynolds et al.); Collision Broadening Through Sequences of Scattering Events: Theory, Consequences and Modeling Within Semiclassical Monte Carlo (L F Register & B Fisher); Transport in a Polarization-Induced 2D Electron Gas (B K Ridley & N A Zakhleniuk); Impact Ionization and High Field Effects in Wide Band Gap Semiconductors (M Reigrotzki et al.); Simulation of Carrier Transport in Wide Band Gap Semiconductors (E Bellotti et al.); Electrical Transport in Organic Semiconductors (I H Campbell & D L Smith). Readership: Researchers and graduate students in the field of semiconductors.
Book Synopsis Topics In High Field Transport In Semiconductors by : Kevin F Brennan
Download or read book Topics In High Field Transport In Semiconductors written by Kevin F Brennan and published by World Scientific. This book was released on 2001-07-31 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book examines some of the charge carrier transport issues encountered in the field of modern semiconductor devices and novel materials. Theoretical approaches to the understanding and modeling of the relevant physical phenomena, seen in devices that have very small spatial dimensions and that operate under high electric field strength, are described in papers written by leading experts and pioneers in this field. In addition, the book examines the transport physics encountered in novel materials such as wide band gap semiconductors (GaN, SiC, etc.) as well as organic semiconductors. Topics in High Field Transport in Semiconductors provides a comprehensive overview that will be beneficial to newcomers as well as engineers and researchers engaged in this exciting field.
Book Synopsis The Physics of Semiconductors by : Marius Grundmann
Download or read book The Physics of Semiconductors written by Marius Grundmann and published by Springer Nature. This book was released on 2021-03-06 with total page 905 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 4th edition of this highly successful textbook features copious material for a complete upper-level undergraduate or graduate course, guiding readers to the point where they can choose a specialized topic and begin supervised research. The textbook provides an integrated approach beginning from the essential principles of solid-state and semiconductor physics to their use in various classic and modern semiconductor devices for applications in electronics and photonics. The text highlights many practical aspects of semiconductors: alloys, strain, heterostructures, nanostructures, amorphous semiconductors, and noise, which are essential aspects of modern semiconductor research but often omitted in other textbooks. This textbook also covers advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors, nanowires, quantum dots, multi-junction solar cells, thin film transistors, and transparent conductive oxides. The 4th edition includes many updates and chapters on 2D materials and aspects of topology. The text derives explicit formulas for many results to facilitate a better understanding of the topics. Having evolved from a highly regarded two-semester course on the topic, The Physics of Semiconductors requires little or no prior knowledge of solid-state physics. More than 2100 references guide the reader to historic and current literature including original papers, review articles and topical books, providing a go-to point of reference for experienced researchers as well.
Book Synopsis Theory of Transport Properties of Semiconductor Nanostructures by : Eckehard Schöll
Download or read book Theory of Transport Properties of Semiconductor Nanostructures written by Eckehard Schöll and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent advances in the fabrication of semiconductors have created almost un limited possibilities to design structures on a nanometre scale with extraordinary electronic and optoelectronic properties. The theoretical understanding of elec trical transport in such nanostructures is of utmost importance for future device applications. This represents a challenging issue of today's basic research since it requires advanced theoretical techniques to cope with the quantum limit of charge transport, ultrafast carrier dynamics and strongly nonlinear high-field ef fects. This book, which appears in the electronic materials series, presents an over view of the theoretical background and recent developments in the theory of electrical transport in semiconductor nanostructures. It contains 11 chapters which are written by experts in their fields. Starting with a tutorial introduction to the subject in Chapter 1, it proceeds to present different approaches to transport theory. The semiclassical Boltzmann transport equation is in the centre of the next three chapters. Hydrodynamic moment equations (Chapter 2), Monte Carlo techniques (Chapter 3) and the cellular au tomaton approach (Chapter 4) are introduced and illustrated with applications to nanometre structures and device simulation. A full quantum-transport theory covering the Kubo formalism and nonequilibrium Green's functions (Chapter 5) as well as the density matrix theory (Chapter 6) is then presented.
Book Synopsis Progress in Nonequilibrium Green's Functions by : Michael Bonitz
Download or read book Progress in Nonequilibrium Green's Functions written by Michael Bonitz and published by World Scientific. This book was released on 2000 with total page 594 pages. Available in PDF, EPUB and Kindle. Book excerpt: Equilibrium and nonequilibrium properties of correlated many-body systems are of growing interest in many fields of physics, including condensed matter, dense plasmas, nuclear matter and particles. The most powerful and general method which applies equally to all these areas is given by quantum field theory.Written by the leading experts and understandable to non-specialists, this book provides an overview on the basic ideas and concepts of the method of nonequilibrium Green's functions. It is complemented by modern applications of the method to a variety of topics, such as optics and transport in dense plasmas and semiconductors; correlations, bound states and coherence; strong field effects and short-pulse lasers; nuclear matter and QCD.Authors include: Gordon Bayan, Pawel Danielewicz, Don DuBois, Hartmut Haug, Klaus Henneberger, Antti-Pekka Jauho, Jrn Kuoll, Dietrich Kremp, Pavel Lipavsky and Paul C Martin.
Book Synopsis Proceedings of the Conference, Progress in Nonequilibrium Green's Functions, Dresden, Germany, 19-23 August 2002 by : Michael Bonitz
Download or read book Proceedings of the Conference, Progress in Nonequilibrium Green's Functions, Dresden, Germany, 19-23 August 2002 written by Michael Bonitz and published by World Scientific. This book was released on 2003 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: Equilibrium and nonequilibrium properties of correlated many-body systems are of growing interest in many areas of physics, including condensed matter, dense plasmas, nuclear matter and particles. The most powerful and general method which is equally applied to all these areas is given by quantum field theory. This book provides an overview of the basic ideas and concepts of the method of nonequilibrium Green''s functions, written by the leading experts and presented in a way accessible to non-specialists and graduate students. It is complemented by invited review papers on modern applications of the method to a variety of topics, such as optics and quantum transport in semiconductors; superconductivity; strong field effects, QCD, and state-of-the-art computational concepts OCo from Green''s functions to quantum Monte Carlo and time-dependent density functional theory.The proceedings have been selected for coverage in: OCo Index to Scientific & Technical Proceedings (ISTP CDROM version / ISI Proceedings)"
Book Synopsis Fundamentals of Modern VLSI Devices by : Yuan Taur
Download or read book Fundamentals of Modern VLSI Devices written by Yuan Taur and published by Cambridge University Press. This book was released on 2013-05-02 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.
Book Synopsis The Physics of Semiconductors by : Marius Grundmann
Download or read book The Physics of Semiconductors written by Marius Grundmann and published by Springer. This book was released on 2015-12-24 with total page 998 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 3rd edition of this successful textbook contains ample material for a comprehensive upper-level undergraduate or beginning graduate course, guiding readers to the point where they can choose a special topic and begin supervised research. The textbook provides a balance between essential aspects of solid-state and semiconductor physics, on the one hand, and the principles of various semiconductor devices and their applications in electronic and photonic devices, on the other. It highlights many practical aspects of semiconductors such as alloys, strain, heterostructures, nanostructures, that are necessary in modern semiconductor research but typically omitted in textbooks. Coverage also includes additional advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors, nanowires, quantum dots, multi-junction solar cells, thin film transistors, carbon-based nanostructures and transparent conductive oxides. The text derives explicit formulas for many results to support better understanding of the topics. The Physics of Semiconductors requires little or no prior knowledge of solid-state physics and evolved from a highly regarded two-semester course. In the third edition several topics are extended and treated in more depth including surfaces, disordered materials, amorphous semiconductors, polarons, thermopower and noise. More than 1800 references guide the reader to historic and current literature including original and review papers and books.
Book Synopsis Electronic and Optoelectronic Properties of Semiconductor Structures by : Jasprit Singh
Download or read book Electronic and Optoelectronic Properties of Semiconductor Structures written by Jasprit Singh and published by Cambridge University Press. This book was released on 2007-03-26 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: A graduate textbook presenting the underlying physics behind devices that drive today's technologies. The book covers important details of structural properties, bandstructure, transport, optical and magnetic properties of semiconductor structures. Effects of low-dimensional physics and strain - two important driving forces in modern device technology - are also discussed. In addition to conventional semiconductor physics the book discusses self-assembled structures, mesoscopic structures and the developing field of spintronics. The book utilizes carefully chosen solved examples to convey important concepts and has over 250 figures and 200 homework exercises. Real-world applications are highlighted throughout the book, stressing the links between physical principles and actual devices. Electronic and Optoelectronic Properties of Semiconductor Structures provides engineering and physics students and practitioners with complete and coherent coverage of key modern semiconductor concepts. A solutions manual and set of viewgraphs for use in lectures are available for instructors, from [email protected].
Book Synopsis Analysis and Simulation of Semiconductor Devices by : S. Selberherr
Download or read book Analysis and Simulation of Semiconductor Devices written by S. Selberherr and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.
Book Synopsis Wide-band-gap Semiconductors by : C.G. Van de Walle
Download or read book Wide-band-gap Semiconductors written by C.G. Van de Walle and published by Elsevier. This book was released on 2012-12-02 with total page 635 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide-band-gap semiconductors have been a research topic for many decades. However, it is only in recent years that the promise for technological applications came to be realized; simultaneously an upsurge of experimental and theoretical activity in the field has been witnessed. Semiconductors with wide band gaps exhibit unique electronic and optical properties. Their low intrinsic carrier concentrations and high breakdown voltage allow high-temperature and high-power applications (diamond, SiC etc.). The short wavelength of band-to-band transitions allows emission in the green, blue, or even UV region of the spectrum (ZnSe, GaN, etc.). In addition, many of these materials have favorable mechanical and thermal characteristics. These proceedings reflect the exciting progress made in this field. Successful p-type doping of ZnSe has recently led to the fabrication of blue-green injection lasers in ZnSe; applications of short-wavelength light-emitting devices range from color displays to optical storage. In SiC, advances in growth techniques for bulk as well as epitaxial material have made the commercial production of high-temperature and high-frequency devices possible. For GaN, refinement of growth procedures and new ways of obtaining doped material have resulted in blue-light-emitting diodes and opened the road to the development of laser diodes. Finally, while the quality of artificial diamond is not yet high enough for electronic applications, the promise it holds in terms of unique material properties is encouraging intense activity in the field. This volume contains contributions from recognized experts presently working on different material systems in the field. The papers cover the theoretical, experimental and application-oriented aspects of this exciting topic.
Book Synopsis Basic Properties of III-V Devices – Understanding Mysterious Trapping Phenomena by : Kompa, Günter
Download or read book Basic Properties of III-V Devices – Understanding Mysterious Trapping Phenomena written by Kompa, Günter and published by kassel university press GmbH. This book was released on 2014 with total page 762 pages. Available in PDF, EPUB and Kindle. Book excerpt: Trapping effects in III-V devices pose a great challenge to any microwave device modeler. Understanding their physical origins is of prime importance to create physics-related reliable device models. The treatment of trapping phenomena is commonly beyond the classical higher-education level of communication engineers. This book provides any basic material needed to understand trapping effects occurring primarily in GaAs and GaN power HEMT devices. As the text material covers interdisciplinary topics such as crystal defects and localized charges, trap centers and trap dynamics, deep-level transient spectroscopy, and trap centers in passivation layers, the book will be of interest to graduate students of electrical engineering, communication engineering, and physics as well as materials, device, and circuit engineers in research and industry.
Author :Christoph Jungemann Publisher :Springer Science & Business Media ISBN 13 :9783211013618 Total Pages :282 pages Book Rating :4.0/5 (136 download)
Book Synopsis Hierarchical Device Simulation by : Christoph Jungemann
Download or read book Hierarchical Device Simulation written by Christoph Jungemann and published by Springer Science & Business Media. This book was released on 2003-06-05 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.
Download or read book Naval Research Reviews written by and published by . This book was released on 1995 with total page 594 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Springer Handbook of Glass by : J. David Musgraves
Download or read book Springer Handbook of Glass written by J. David Musgraves and published by Springer Nature. This book was released on 2019-11-08 with total page 1851 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook provides comprehensive treatment of the current state of glass science from the leading experts in the field. Opening with an enlightening contribution on the history of glass, the volume is then divided into eight parts. The first part covers fundamental properties, from the current understanding of the thermodynamics of the amorphous state, kinetics, and linear and nonlinear optical properties through colors, photosensitivity, and chemical durability. The second part provides dedicated chapters on each individual glass type, covering traditional systems like silicates and other oxide systems, as well as novel hybrid amorphous materials and spin glasses. The third part features detailed descriptions of modern characterization techniques for understanding this complex state of matter. The fourth part covers modeling, from first-principles calculations through molecular dynamics simulations, and statistical modeling. The fifth part presents a range of laboratory and industrial glass processing methods. The remaining parts cover a wide and representative range of applications areas from optics and photonics through environment, energy, architecture, and sensing. Written by the leading international experts in the field, the Springer Handbook of Glass represents an invaluable resource for graduate students through academic and industry researchers working in photonics, optoelectronics, materials science, energy, architecture, and more.
Download or read book Research in Progress written by and published by . This book was released on 1978 with total page 834 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Devices Based on Low-Dimensional Semiconductor Structures by : M. Balkanski
Download or read book Devices Based on Low-Dimensional Semiconductor Structures written by M. Balkanski and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low-dimensional semiconductor quantum structures are a major, high-technological development that has a considerable industrial potential. The field is developing extremely rapidly and the present book represents a timely guide to the latest developments in device technology, fundamental properties, and some remarkable applications. The content is largely tutorial, and the book could be used as a textbook. The book deals with the physics, fabrication, characteristics and performance of devices based on low-dimensional semiconductor structures. It opens with fabrication procedures. The fundamentals of quantum structures and electro-optical devices are dealt with extensively. Nonlinear optical devices are discussed from the point of view of physics and applications of exciton saturation in MQW structures. Waveguide-based devices are also described in terms of linear and nonlinear coupling. The basics of pseudomorphic HEMT technology, device physics and materials layer design are presented. Each aspect is reviewed from the elementary basics up to the latest developments. Audience: Undergraduates in electrical engineering, graduates in physics and engineering schools. Useful for active scientists and engineers wishing to update their knowledge and understanding of recent developments.
