Highly Integrated Gate Drivers For Si And Gan Power Transistors

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Highly Integrated Gate Drivers for Si and GaN Power Transistors

Author : Achim Seidel
Publisher : Springer Nature
ISBN 13 : 3030689409
Total Pages : 137 pages
Book Rating : 4.0/5 (36 download)

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Book Synopsis Highly Integrated Gate Drivers for Si and GaN Power Transistors by : Achim Seidel

Download or read book Highly Integrated Gate Drivers for Si and GaN Power Transistors written by Achim Seidel and published by Springer Nature. This book was released on 2021-03-31 with total page 137 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.

A Smart Gate Driver IC for GaN Power Transistors

Author : Jingshu Yu
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (133 download)

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Book Synopsis A Smart Gate Driver IC for GaN Power Transistors by : Jingshu Yu

Download or read book A Smart Gate Driver IC for GaN Power Transistors written by Jingshu Yu and published by . This book was released on 2019 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: With the growing demands for high frequency, high temperature, and high power density applications in power electronics industry, silicon is reaching its theoretical limits. Wide band gap materials, such as GaN and SiC, have become the most popular successor candidates to keep "More than Moore" alive, due to their superior properties and mature technological process. However, there are many design challenges for driving GaN power transistors, including tight restriction on the gate voltage, EMI and reliability issues due to the large dv/dt and di/dt slew rates, the precision timing control, etc. In this thesis, an integrated smart gate driver IC with segmented output stage topology, programmable sense-FET, current sensing circuits and an on-chip stacked-based CPU for flexible digital control is presented. This IC is fabricated using TSMC's 0.18 um BCD GEN2 technology process for driving a d-mode GaN power HEMT in cascode configuration. The embedded CPU can configure all the digital control bits on-the-fly, with only 6 I/O pins. By using segmentation technique, this IC can suppress gate voltage spike and achieve switching node slope control. Compared with conventional fixed ROUT driving scheme, the gate voltage overshoot during transition is reduced by 89% with a load current of 5 A. In an 8 V to 15 V, 7.5 W boost converter operating at 1 MHz, an average EMI reduction of 4.43 dB is achieved between 40 MHz to 200 MHz, by utilizing dynamic driving strategy. When fSW = 2 MHz, the overall power conversion efficiency is improved by 6% at the rated output power. The programmable sense-FET and current sensing circuit can provide peak-current detection with a response time of 26 ns. This IC has many other add-on functions, including the active driving mode, which can change the best driving pattern on-the-fly. Compared to conventional gate drivers, the proposed driver IC offers a fully integrated solution, which eliminates the need for external controller, addition passive components, and analog circuit building for close loop regulation. System volume is reduced, while the design exibility is greatly improved.

GaN Transistors for Efficient Power Conversion

Author : Alex Lidow
Publisher : John Wiley & Sons
ISBN 13 : 1119594375
Total Pages : 384 pages
Book Rating : 4.1/5 (195 download)

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Book Synopsis GaN Transistors for Efficient Power Conversion by : Alex Lidow

Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2019-08-23 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.

Extended Monolithic Integration Levels for Highly Functional GaN Power ICs

Author : Michael Basler
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (137 download)

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Book Synopsis Extended Monolithic Integration Levels for Highly Functional GaN Power ICs by : Michael Basler

Download or read book Extended Monolithic Integration Levels for Highly Functional GaN Power ICs written by Michael Basler and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: A new generation of power electronic systems with reduced size, losses and costs is emerging due to the rapid development of gallium nitride (GaN) transistors. These transistors are fabricated in the GaN-on-Si technology and have a lateral structure, which enables the monolithic integration with peripheral functions such as driver, sensing, protection, and control. In this manner, the first GaN power integrated circuits (ICs) with gate driver have successfully entered the market. This work extends the monolithic integration in the GaN technology by introducing and investigating building and function blocks for power ICs. A GaN power IC platform with devices and building blocks is investigated regarding its characteristics and its related design issues are analyzed. This leads to new design approaches and methods, which are presented in this thesis. Integration levels are introduced for the classification of GaN power ICs. Emphasis is placed on a schematic and layout design framework which provides circuit designers an effective way to implement custom power ICs. Two types of transistors and diodes as well as design approaches for layout structures with high current carrying capabilities are analyzed. Besides the investigation of active devices, also new approaches for integrated passives are introduced, such as dog bone layouts for high impedance resistors, p-GaN gate and stacked MIM capacitors as well as spiral inductors with high current carrying capabilities. Another focus is on the building blocks with digital and analog basic circuits. Area-efficient designs for logic gates with reduced static losses are presented. In addition, there are investigations into multi-stage comparators based on differential amplifiers and temperature-compensated voltage references. Based on this GaN power IC platform, two case studies are presented for a DC-DC synchronous buck converter and AC-DC active rectifier diode. The case studies on the one hand highlight the capability to implement complex functions and even systems consisting of devices and function blocks with their design approaches on a single chip and to use them advantageously for power electronics applications. Experimental measurements on implemented hardware prototypes, on the other hand, verify the advantages of highly-integrated GaN power ICs. The key findings of this work on GaN power integration are given. Beyond this comparisons of GaN and Si IC technologies as well as GaN power ICs are elaborated and perspectives, challenges and social benefits are discussed. This work contributes significantly to the progress and development of highly-integrated high-performance GaN ICs for power electronics

GaN Technology

Author : Maurizio Di Paolo Emilio
Publisher : Springer Nature
ISBN 13 : 3031632389
Total Pages : 388 pages
Book Rating : 4.0/5 (316 download)

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Book Synopsis GaN Technology by : Maurizio Di Paolo Emilio

Download or read book GaN Technology written by Maurizio Di Paolo Emilio and published by Springer Nature. This book was released on with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Monolithic Integration in E-Mode GaN Technology

Author : Maik Peter Kaufmann
Publisher : Springer Nature
ISBN 13 : 3031156250
Total Pages : 185 pages
Book Rating : 4.0/5 (311 download)

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Book Synopsis Monolithic Integration in E-Mode GaN Technology by : Maik Peter Kaufmann

Download or read book Monolithic Integration in E-Mode GaN Technology written by Maik Peter Kaufmann and published by Springer Nature. This book was released on 2022-10-26 with total page 185 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a comprehensive, all-in-one source on design of monolithic GaN power ICs. It is written in handbook style with systematic guidelines and includes implementation examples. It covers the full range from technology fundamentals to implementation details including design techniques specific for GaN technology. It provides a detailed loss analysis based on comparative measurements between silicon and GaN based converters to provide an understanding of the relations between design choices and results which can be transferred to other power converter systems.

Power Electronics Handbook

Author : Muhammad H. Rashid
Publisher : Elsevier
ISBN 13 : 0323993435
Total Pages : 1472 pages
Book Rating : 4.3/5 (239 download)

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Book Synopsis Power Electronics Handbook by : Muhammad H. Rashid

Download or read book Power Electronics Handbook written by Muhammad H. Rashid and published by Elsevier. This book was released on 2023-09-27 with total page 1472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power Electronics Handbook, Fifth Edition delivers an expert guide to power electronics and their applications. The book examines the foundations of power electronics, power semiconductor devices, and power converters, before reviewing a constellation of modern applications. Comprehensively updated throughout, this new edition features new sections addressing current practices for renewable energy storage, transmission, integration, and operation, as well as smart-grid security, intelligent energy, artificial intelligence, and machine learning applications applied to power electronics, and autonomous and electric vehicles. This handbook is aimed at practitioners and researchers undertaking projects requiring specialist design, analysis, installation, commissioning, and maintenance services. Provides a fully comprehensive work addressing each aspect of power electronics in painstaking depth Delivers a methodical technical presentation in over 1500 pages Includes 50+ contributions prepared by leading experts Offers practical support and guidance with detailed examples and applications for lab and field experimentation Includes new technical sections on smart-grid security and intelligent energy, artificial intelligence, and machine learning applications applied to power electronics and autonomous and electric vehicles Features new chapter level templates and a narrative progression to facilitate understanding

High Frequency MOSFET Gate Drivers

Author : ZhiLiang Zhang
Publisher : IET
ISBN 13 : 1785613650
Total Pages : 296 pages
Book Rating : 4.7/5 (856 download)

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Book Synopsis High Frequency MOSFET Gate Drivers by : ZhiLiang Zhang

Download or read book High Frequency MOSFET Gate Drivers written by ZhiLiang Zhang and published by IET. This book was released on 2017-09-14 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes advanced high frequency power MOSFET gate driver technologies, which serve a critical role between control and power devices. A gate driver is a power amplifier that accepts a low-power input from a controller integrated circuit and produces a high-current drive input for the gate of a high-power transistor such as a power MOSFET (metal-oxide-semiconductor field-effect transistor).

Driving Techniques for GaN Power HEMTs

Author : Rophina Chi-Wai Li
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (13 download)

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Book Synopsis Driving Techniques for GaN Power HEMTs by : Rophina Chi-Wai Li

Download or read book Driving Techniques for GaN Power HEMTs written by Rophina Chi-Wai Li and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Wide Bandgap Semiconductors for Power Electronics

Author : Peter Wellmann
Publisher : John Wiley & Sons
ISBN 13 : 3527346716
Total Pages : 743 pages
Book Rating : 4.5/5 (273 download)

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Book Synopsis Wide Bandgap Semiconductors for Power Electronics by : Peter Wellmann

Download or read book Wide Bandgap Semiconductors for Power Electronics written by Peter Wellmann and published by John Wiley & Sons. This book was released on 2022-01-10 with total page 743 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers. This important book: Presents a review of wide bandgap materials and recent developments Links the high potential of wide bandgap semiconductors with the technological implementation capabilities Offers a unique combination of academic and industrial perspectives Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.

Lateral Power Transistors in Integrated Circuits

Author : Tobias Erlbacher
Publisher : Springer
ISBN 13 : 3319005006
Total Pages : 235 pages
Book Rating : 4.3/5 (19 download)

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Book Synopsis Lateral Power Transistors in Integrated Circuits by : Tobias Erlbacher

Download or read book Lateral Power Transistors in Integrated Circuits written by Tobias Erlbacher and published by Springer. This book was released on 2014-10-08 with total page 235 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book summarizes and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. In its first part, the book motivates the necessity for lateral power transistors by a top-down approach: First, it presents typical energy conversion applications in modern industrial, automotive and consumer electronics. Next, it introduces common circuit topologies suitable for these applications, and discusses the feasibility for monolithic integration. Finally, the combination of power and logic functionality on a single chip is motivated and the requirements and limitations for the power semiconductor devices are deduced. The second part describes the evolution of lateral power transistors over the past decades from the simple pin-type concept to double-acting RESURF topologies. It describes the principle of operation for these LDMOS devices and discusses limitations of lateral power devices. Moreover, figures-of-merit are presented which can be used to evaluate the performance of the novel lateral power transistors described in this book with respect to the LDMOS devices. In the last part, [..] the fundamental physical concepts including charge compensation and trench gate topologies are discussed. Also, the status of research in LDMOS devices on silicon carbide is presented. Advantages and drawbacks for each of these integration approaches are summarized, and the feasibility with respect to power electronic applications is evaluated.

Power GaN Devices

Author : Matteo Meneghini
Publisher : Springer
ISBN 13 : 3319431994
Total Pages : 383 pages
Book Rating : 4.3/5 (194 download)

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Book Synopsis Power GaN Devices by : Matteo Meneghini

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Integrated High-Vin Multi-MHz Converters

Author : Jürgen Wittmann
Publisher : Springer Nature
ISBN 13 : 3030252574
Total Pages : 184 pages
Book Rating : 4.0/5 (32 download)

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Book Synopsis Integrated High-Vin Multi-MHz Converters by : Jürgen Wittmann

Download or read book Integrated High-Vin Multi-MHz Converters written by Jürgen Wittmann and published by Springer Nature. This book was released on 2019-09-03 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with guidelines for designing integrated multi-MHz-switching converters for input voltages/system supplies up to 50V or higher. Coverage includes converter theory, converter architectures, circuit design, efficiency, sizing of passives, technology aspects, etc. The author discusses new circuit designs, new architectures and new switching concepts, including dead-time control and soft-switching techniques that overcome current limitations of these converters. The discussion includes technology related issues and helps readers to choose the right technology for fast-switching converters. This book discusses benefits and drawbacks in terms of integration, size and cost, efficiency and complexity, and enables readers to make trade-offs in design, given different converter parameters. Describes a study for increasing switching frequencies up to 30 MHz at input voltages up to 50V or higher in the scaling of the size of switching converter passives; Analyzes various buck converter implementations and shows that a preference due to higher efficiency depends on the operating point, on the available switch technologies, and on the implementation of the high-side supply generation; Describes an efficiency model based on a four-phase model, which enables separation of loss causes and loss locations.

High Frequency MOSFET Gate Drivers

Author : ZhiLiang Zhang
Publisher :
ISBN 13 : 9781523112845
Total Pages : 337 pages
Book Rating : 4.1/5 (128 download)

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Book Synopsis High Frequency MOSFET Gate Drivers by : ZhiLiang Zhang

Download or read book High Frequency MOSFET Gate Drivers written by ZhiLiang Zhang and published by . This book was released on 2017 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt:

A Gate Driver IC Based on High-voltage Energy Storing for GaN Transistors

Author : Achim Seidel
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (118 download)

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Book Synopsis A Gate Driver IC Based on High-voltage Energy Storing for GaN Transistors by : Achim Seidel

Download or read book A Gate Driver IC Based on High-voltage Energy Storing for GaN Transistors written by Achim Seidel and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Design of Power Management Integrated Circuits

Author : Bernhard Wicht
Publisher : John Wiley & Sons
ISBN 13 : 1119123062
Total Pages : 484 pages
Book Rating : 4.1/5 (191 download)

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Book Synopsis Design of Power Management Integrated Circuits by : Bernhard Wicht

Download or read book Design of Power Management Integrated Circuits written by Bernhard Wicht and published by John Wiley & Sons. This book was released on 2024-07-22 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt: Comprehensive resource on power management ICs affording new levels of functionality and applications with cost reduction in various fields Design of Power Management Integrated Circuits is a comprehensive reference for power management IC design, covering the circuit design of main power management circuits like linear and switched-mode voltage regulators, along with sub-circuits such as power switches, gate drivers and their supply, level shifters, the error amplifier, current sensing, and control loop design. Circuits for protection and diagnostics, as well as aspects of the physical design like lateral and vertical power delivery, pin-out, floor planning, grounding/supply guidelines, and packaging, are also addressed. A full chapter is dedicated to the design of integrated passives. The text illustrates the application of power management integrated circuits (PMIC) to growth areas like computing, the internet of Things, mobility, and renewable energy. Includes numerous real-world examples, case studies, and exercises illustrating key design concepts and techniques. Offering a unique insight into this rapidly evolving technology through the author's experience developing PMICs in both the industrial and academic environment, Design of Power Management Integrated Circuits includes information on: Capacitive, inductive and hybrid DC-DC converters and their essential circuit blocks, covering error amplifiers, comparators, and ramp generators Sensing, protection, and diagnostics, covering thermal protection, inductive loads and clamping structures, under-voltage, reference and power-on reset generation Integrated MOS, MOM and MIM capacitors, integrated inductors Control loop design and PWM generation ensuring stability and fast transient response; subharmonic oscillations in current mode control (analysis and circuit design for slope compensation) DC behavior and DC-related circuit design, covering power efficiency, line and load regulation, error amplifier, dropout, and power transistor sizing Commonly used level shifters (including sizing rules) and cascaded (tapered) driver sizing and optimization guidelines Optimizing the physical design considering packaging, floor planning, EMI, pinout, PCB design and thermal design Design of Power Management Integrated Circuits is an essential resource on the subject for circuit designers/IC designers, system engineers, and application engineers, along with advanced undergraduate students and graduate students in related programs of study.

Recent Advances in Electrical and Electronic Engineering

Author : Bibhu Prasad Swain
Publisher : Springer Nature
ISBN 13 : 9819947138
Total Pages : 584 pages
Book Rating : 4.8/5 (199 download)

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Book Synopsis Recent Advances in Electrical and Electronic Engineering by : Bibhu Prasad Swain

Download or read book Recent Advances in Electrical and Electronic Engineering written by Bibhu Prasad Swain and published by Springer Nature. This book was released on 2023-11-03 with total page 584 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents select proceedings of the International Conference on Science, Technology and Engineering (ICSTE 2023) related to electrical and electronic engineering. Various topics covered include neural network classification, text detection from natural scene images, speech processing systems, Wi-Fi intrusion detection, machine learning, wireless sensor network, image retrieval, automatic speech recognition, device physics, power transfer, photovoltaics, antenna for ultra-wideband applications, electric vehicles, etc. The book is useful for researchers and professionals whose work involves electrical and electronics and computer science fields.