Handbook Of Gan Semiconductor Materials And Devices

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Handbook of GaN Semiconductor Materials and Devices

Author : Wengang (Wayne) Bi
Publisher : CRC Press
ISBN 13 : 1351648055
Total Pages : 775 pages
Book Rating : 4.3/5 (516 download)

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Book Synopsis Handbook of GaN Semiconductor Materials and Devices by : Wengang (Wayne) Bi

Download or read book Handbook of GaN Semiconductor Materials and Devices written by Wengang (Wayne) Bi and published by CRC Press. This book was released on 2017-10-20 with total page 775 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.

Handbook of Nitride Semiconductors and Devices, Materials Properties, Physics and Growth

Author : Hadis Morkoç
Publisher : John Wiley & Sons
ISBN 13 : 3527628460
Total Pages : 1311 pages
Book Rating : 4.5/5 (276 download)

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Book Synopsis Handbook of Nitride Semiconductors and Devices, Materials Properties, Physics and Growth by : Hadis Morkoç

Download or read book Handbook of Nitride Semiconductors and Devices, Materials Properties, Physics and Growth written by Hadis Morkoç and published by John Wiley & Sons. This book was released on 2009-07-30 with total page 1311 pages. Available in PDF, EPUB and Kindle. Book excerpt: The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed.

Handbook of GaN Semiconductor Materials and Devices

Author : Wengang (Wayne) Bi
Publisher : CRC Press
ISBN 13 : 1498747140
Total Pages : 709 pages
Book Rating : 4.4/5 (987 download)

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Book Synopsis Handbook of GaN Semiconductor Materials and Devices by : Wengang (Wayne) Bi

Download or read book Handbook of GaN Semiconductor Materials and Devices written by Wengang (Wayne) Bi and published by CRC Press. This book was released on 2017-10-20 with total page 709 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.

Nitride Semiconductors

Author : Pierre Ruterana
Publisher : John Wiley & Sons
ISBN 13 : 3527607404
Total Pages : 686 pages
Book Rating : 4.5/5 (276 download)

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Book Synopsis Nitride Semiconductors by : Pierre Ruterana

Download or read book Nitride Semiconductors written by Pierre Ruterana and published by John Wiley & Sons. This book was released on 2006-05-12 with total page 686 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor components based on silicon have been used in a wide range of applications for some time now. These elemental semiconductors are now well researched and technologically well developed. In the meantime the focus has switched to a new group of materials: ceramic semiconductors based on nitrides are currently the subject of research due to their optical and electronic characteristics. They open up new industrial possibilities in the field of photosensors, as light sources or as electronic components. This collection of review articles provides a systematic and in-depth overview of the topic, on both a high and current level. It offers information on the physical basics as well as the latest results in a compact yet comprehensive manner. The contributions cover the physical processes involved in manufacture, from semiconductor growth, via their atomic structures and the related characteristics right up to future industrial applications. A highly pertinent book for anyone working in applied materials research or the semiconductor industry.

Properties of Advanced Semiconductor Materials

Author : Michael E. Levinshtein
Publisher : John Wiley & Sons
ISBN 13 : 9780471358275
Total Pages : 220 pages
Book Rating : 4.3/5 (582 download)

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Book Synopsis Properties of Advanced Semiconductor Materials by : Michael E. Levinshtein

Download or read book Properties of Advanced Semiconductor Materials written by Michael E. Levinshtein and published by John Wiley & Sons. This book was released on 2001-02-21 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing the most reliable parameter values for each of these semiconductor materials, along with applicable references, these data are organized in a structured, logical way for each semiconductor material. * Reviews traditional semiconductor materials as well as new, advanced semiconductors. * Essential authoritative handbook on the properties of semiconductor materials.

Handbook of Luminescent Semiconductor Materials

Author : Leah Bergman
Publisher : CRC Press
ISBN 13 : 1439834806
Total Pages : 460 pages
Book Rating : 4.4/5 (398 download)

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Book Synopsis Handbook of Luminescent Semiconductor Materials by : Leah Bergman

Download or read book Handbook of Luminescent Semiconductor Materials written by Leah Bergman and published by CRC Press. This book was released on 2016-04-19 with total page 460 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to stud

Handbook of Instrumentation and Techniques for Semiconductor Nanostructure Characterization

Author : Richard Haight
Publisher : World Scientific
ISBN 13 : 9814322849
Total Pages : 346 pages
Book Rating : 4.8/5 (143 download)

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Book Synopsis Handbook of Instrumentation and Techniques for Semiconductor Nanostructure Characterization by : Richard Haight

Download or read book Handbook of Instrumentation and Techniques for Semiconductor Nanostructure Characterization written by Richard Haight and published by World Scientific. This book was released on 2012 with total page 346 pages. Available in PDF, EPUB and Kindle. Book excerpt: As we delve more deeply into the physics and chemistry of functional materials and processes, we are inexorably driven to the nanoscale. And nowhere is the development of instrumentation and associated techniques more important to scientific progress than in the area of nanoscience. The dramatic expansion of efforts to peer into nanoscale materials and processes has made it critical to capture and summarize the cutting-edge instrumentation and techniques that have become indispensable for scientific investigation in this arena. This Handbook is a key resource developed for scientists, engineers and advanced graduate students in which eminent scientists present the forefront of instrumentation and techniques for the study of structural, optical and electronic properties of semiconductor nanostructures.

Nitride Semiconductors and Devices

Author : Hadis Morkoç
Publisher : Springer Science & Business Media
ISBN 13 : 3642585620
Total Pages : 511 pages
Book Rating : 4.6/5 (425 download)

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Book Synopsis Nitride Semiconductors and Devices by : Hadis Morkoç

Download or read book Nitride Semiconductors and Devices written by Hadis Morkoç and published by Springer Science & Business Media. This book was released on 2013-03-08 with total page 511 pages. Available in PDF, EPUB and Kindle. Book excerpt: This timely monograph addresses an important class of semiconductors and devices that constitute the underlying technology for blue lasers. It succinctly treats structural, electrical and optical properties of nitrides and the substrates on which they are deposited, band structures of nitrides, optical processes, deposition and fabrication technologies, light-emitting diodes, and lasers. It also includes many tables and figures detailing the properties and performance of nitride semiconductors and devices.

Handbook of Zinc Oxide and Related Materials

Author : Zhe Chuan Feng
Publisher : Taylor & Francis
ISBN 13 : 1439855714
Total Pages : 447 pages
Book Rating : 4.4/5 (398 download)

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Book Synopsis Handbook of Zinc Oxide and Related Materials by : Zhe Chuan Feng

Download or read book Handbook of Zinc Oxide and Related Materials written by Zhe Chuan Feng and published by Taylor & Francis. This book was released on 2012-09-26 with total page 447 pages. Available in PDF, EPUB and Kindle. Book excerpt: Through their application in energy-efficient and environmentally friendly devices, zinc oxide (ZnO) and related classes of wide gap semiconductors, including GaN and SiC, are revolutionizing numerous areas, from lighting, energy conversion, photovoltaics, and communications to biotechnology, imaging, and medicine. With an emphasis on engineering a

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

Author : Osamu Ueda
Publisher : Springer Science & Business Media
ISBN 13 : 1461443369
Total Pages : 618 pages
Book Rating : 4.4/5 (614 download)

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Book Synopsis Materials and Reliability Handbook for Semiconductor Optical and Electron Devices by : Osamu Ueda

Download or read book Materials and Reliability Handbook for Semiconductor Optical and Electron Devices written by Osamu Ueda and published by Springer Science & Business Media. This book was released on 2012-09-24 with total page 618 pages. Available in PDF, EPUB and Kindle. Book excerpt: Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms.

GaN Transistors for Efficient Power Conversion

Author : Alex Lidow
Publisher : John Wiley & Sons
ISBN 13 : 1119594421
Total Pages : 518 pages
Book Rating : 4.1/5 (195 download)

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Book Synopsis GaN Transistors for Efficient Power Conversion by : Alex Lidow

Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2019-08-12 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.

III-Nitride Semiconductors and Their Modern Devices

Author : Bernard Gil
Publisher : Semiconductor Science and Tech
ISBN 13 : 0199681724
Total Pages : 661 pages
Book Rating : 4.1/5 (996 download)

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Book Synopsis III-Nitride Semiconductors and Their Modern Devices by : Bernard Gil

Download or read book III-Nitride Semiconductors and Their Modern Devices written by Bernard Gil and published by Semiconductor Science and Tech. This book was released on 2013-08-22 with total page 661 pages. Available in PDF, EPUB and Kindle. Book excerpt: All recent developments of nitrides and of their technology are gathered here in a single book, with chapters written by world leaders in the field.

Handbook for III-V High Electron Mobility Transistor Technologies

Author : D. Nirmal
Publisher : CRC Press
ISBN 13 : 0429862520
Total Pages : 434 pages
Book Rating : 4.4/5 (298 download)

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Book Synopsis Handbook for III-V High Electron Mobility Transistor Technologies by : D. Nirmal

Download or read book Handbook for III-V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Semiconductor Material and Device Characterization

Author : Dieter K. Schroder
Publisher : John Wiley & Sons
ISBN 13 : 0471739065
Total Pages : 800 pages
Book Rating : 4.4/5 (717 download)

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Book Synopsis Semiconductor Material and Device Characterization by : Dieter K. Schroder

Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

High-Frequency GaN Electronic Devices

Author : Patrick Fay
Publisher : Springer
ISBN 13 : 3030202089
Total Pages : 308 pages
Book Rating : 4.0/5 (32 download)

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Book Synopsis High-Frequency GaN Electronic Devices by : Patrick Fay

Download or read book High-Frequency GaN Electronic Devices written by Patrick Fay and published by Springer. This book was released on 2019-08-01 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications. Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field; Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes; Provides “vertically integrated” coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques; Includes fundamental physics, as well as numerical simulations and experimental realizations.

Fundamentals of Semiconductors

Author : Peter YU
Publisher : Springer Science & Business Media
ISBN 13 : 3540264752
Total Pages : 651 pages
Book Rating : 4.5/5 (42 download)

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Book Synopsis Fundamentals of Semiconductors by : Peter YU

Download or read book Fundamentals of Semiconductors written by Peter YU and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 651 pages. Available in PDF, EPUB and Kindle. Book excerpt: Excellent bridge between general solid-state physics textbook and research articles packed with providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors "The most striking feature of the book is its modern outlook ... provides a wonderful foundation. The most wonderful feature is its efficient style of exposition ... an excellent book." Physics Today "Presents the theoretical derivations carefully and in detail and gives thorough discussions of the experimental results it presents. This makes it an excellent textbook both for learners and for more experienced researchers wishing to check facts. I have enjoyed reading it and strongly recommend it as a text for anyone working with semiconductors ... I know of no better text ... I am sure most semiconductor physicists will find this book useful and I recommend it to them." Contemporary Physics Offers much new material: an extensive appendix about the important and by now well-established, deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters.

Gallium Nitride (GaN)

Author : Farid Medjdoub
Publisher : CRC Press
ISBN 13 : 1482220040
Total Pages : 372 pages
Book Rating : 4.4/5 (822 download)

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Book Synopsis Gallium Nitride (GaN) by : Farid Medjdoub

Download or read book Gallium Nitride (GaN) written by Farid Medjdoub and published by CRC Press. This book was released on 2017-12-19 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.