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Author : J. Anthony Powell
Publisher :
ISBN 13 :
Total Pages : 20 pages
Book Rating : 4.:/5 (31 download)
Download or read book Growth of 2H Silicon Carbide Crystals written by J. Anthony Powell and published by . This book was released on 1969 with total page 20 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Herbert A. Will
Publisher :
ISBN 13 :
Total Pages : 44 pages
Book Rating : 4.:/5 (31 download)
Download or read book Low-temperature Solid-state Phase Transformations in 2H Silicon Carbide written by Herbert A. Will and published by . This book was released on 1972 with total page 44 pages. Available in PDF, EPUB and Kindle. Book excerpt: Single crystals of 2H SiC were observed to undergo phase transformations at temperatures as low as 400 C. Some 2H crystals transformed to a structure with one-dimensional disorder along the crystal c axis. Others transformed to a faulted cubic/6H structure. The transformation is time and temperature dependent and is greatly enhanced by dislocations. Observations indicate that the transformation takes place by means of a slip process perpendicular to the c axis. Cubic SiC crystals were observed to undergo a solid state transformation above 1400 C.
Author : J. Anthony Powell
Publisher :
ISBN 13 :
Total Pages : 28 pages
Book Rating : 4.:/5 (31 download)
Download or read book Refractive Index and Birefringence of 2H Silicon Carbide written by J. Anthony Powell and published by . This book was released on 1972 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Charles Edward Ryan
Publisher :
ISBN 13 :
Total Pages : 28 pages
Book Rating : 4.3/5 (91 download)
Download or read book Some Factors Affecting the Growth of Beta Silicon Carbide written by Charles Edward Ryan and published by . This book was released on 1966 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt: The report discusses the growth of beta silicon carbide by the hydrogen reduction of methyl trichlorine onto carbon substrates at 1500C. It is shown that alpha inclusions present are the rare 2H (Wurtzite) modification of silicon carbide and that their presence resulted from a vapor-liquid-solid growth mechanism which was dominated by impurities in the substrate. By carefully cleaning the substrate and purifying the methyltrichlorosilane, the alpha inclusions were eliminated. The 2H alpha crystals were then deliberately grown by introducing selected impurities locally on the substrate. Beta crystals were also intentionally grown by the vapor-liquid-solid technique by introducing appropriate impurities. Growth of beta silicon carbide from the melt is also briefly discussed. (Author).
Author : E. Givargizov
Publisher : Springer Science & Business Media
ISBN 13 : 1461571197
Total Pages : 372 pages
Book Rating : 4.4/5 (615 download)
Download or read book Growth of Crystals written by E. Givargizov and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present volume continues the tradition of the preceding volumes. covering a wide range of crystal growth problems and treating aspects of critical importance for crystalliza tion. Changes in this field of knowledge have. however, changed the criteria for selection of papers for inclusion in this series. The increasing role of crystals in science and technology is even more apparent today. The study and utilization of these highly perfect objects of nature considerably facilitates progress in the physics and chemistry of solids. quantum electronics, optics, microelectron ics, and other sciences. The demand for crystals and crystal devices has grown steadily and has led to the emergence and rapid growth of the single crystal industry (we can safely saythat the state ofthe art in this industry is indicative ofthe overall scientific and technolo- cal potential of a country). At the same time, the introduction of crystallization techniques into other industries is gaining ever-increasing importance. To illustrate this last state ment, we can mention the fabrication of textured structural materials and direct methods of metal reduction in ores by using chemical vapor transport techniques. Crystallization tech ll niques progress both in "width" and in "depth : traditional methods are modernized. and novel techniques appear, some of them at the junction of the already existing technologies (for example, flux growth of crystals, growth from vapor with participation of the liquid phase, etc. ).
Author :
Publisher :
ISBN 13 :
Total Pages : 792 pages
Book Rating : 4.3/5 (91 download)
Download or read book NASA Technical Note written by and published by . This book was released on 1974 with total page 792 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Handong Li
Publisher : Springer Science & Business Media
ISBN 13 : 1461481694
Total Pages : 414 pages
Book Rating : 4.4/5 (614 download)
Download or read book Silicon-based Nanomaterials written by Handong Li and published by Springer Science & Business Media. This book was released on 2013-10-02 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt: A variety of nanomaterials have excellent optoelectronic and electronic properties for novel device applications. At the same time, and with advances in silicon integrated circuit (IC) techniques, compatible Si-based nanomaterials hold promise of applying the advantages of nanomaterials to the conventional IC industry. This book focuses not only on silicon nanomaterials, but also summarizes up-to-date developments in the integration of non-silicon nanomaterials on silicon. The book showcases the work of leading researchers from around the world who address such key questions as: Which silicon nanomaterials can give the desired optical, electrical, and structural properties, and how are they prepared? What nanomaterials can be integrated on to a silicon substrate and how is this accomplished? What Si-based nanomaterials may bring a breakthrough in this field? These questions address the practical issues associated with the development of nanomaterial-based devices in applications areas such as solar cells, luminous devices for optical communication (detectors, lasers), and high mobility transistors. Investigation of silicon-based nanostructures is of great importance to make full use of nanomaterials for device applications. Readers will receive a comprehensive view of Si-based nanomaterials, which will hopefully stimulate interest in developing novel nanostructures or techniques to satisfy the requirements of high performance device applications. The goal is to make nanomaterials the main constituents of the high performance devices of the future.
Author :
Publisher :
ISBN 13 :
Total Pages : 1038 pages
Book Rating : 4.:/5 (31 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1972 with total page 1038 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Author :
Publisher : Springer Nature
ISBN 13 : 1461596181
Total Pages : 270 pages
Book Rating : 4.4/5 (615 download)
Download or read book Crystal Growth Bibliography written by and published by Springer Nature. This book was released on 1981 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Wolfgang J. Choyke
Publisher : Springer Science & Business Media
ISBN 13 : 9783540404583
Total Pages : 938 pages
Book Rating : 4.4/5 (45 download)
Download or read book Silicon Carbide written by Wolfgang J. Choyke and published by Springer Science & Business Media. This book was released on 2003-10-08 with total page 938 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.
Author : Zhe Chuan Feng
Publisher : CRC Press
ISBN 13 : 9780750301800
Total Pages : 318 pages
Book Rating : 4.3/5 (18 download)
Download or read book Semiconductor Interfaces, Microstructures and Devices written by Zhe Chuan Feng and published by CRC Press. This book was released on 1993-01-01 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt: A semiconductor interface is the contact between the semiconductor itself and a metal. The interface is a site of change, and it is imperative to ensure that the semiconducting material is sealed at this point to maintain its reliability. This book examines various aspects of interfaces, showing how they can affect microstructures and devices such as infrared photodetectors (as used in nightsights) and blue diode lasers. It presents various techniques for examining different types of semiconductor material and suggests future potential commercial applications for different semiconductor devices. Written by experts in their fields and focusing on metallic semiconductors (Cadmium Telluride and related compounds), this comprehensive overview of recent developments is an essential reference for those working in the semiconductor industry and provides a concise and comprehensive introduction to those new to the field.
Author : United States. National Aeronautics and Space Administration. Scientific and Technical Information Division
Publisher :
ISBN 13 :
Total Pages : 962 pages
Book Rating : 4.E/5 ( download)
Download or read book A Selected Listing of NASA Scientific and Technical Reports written by United States. National Aeronautics and Space Administration. Scientific and Technical Information Division and published by . This book was released on 1970 with total page 962 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : United States. National Aeronautics and Space Administration Scientific and Technical Information Division
Publisher :
ISBN 13 :
Total Pages : 966 pages
Book Rating : 4.F/5 ( download)
Download or read book NASA Scientific and Technical Reports written by United States. National Aeronautics and Space Administration Scientific and Technical Information Division and published by . This book was released on 1970 with total page 966 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : United States. National Aeronautics and Space Administration. Scientific and Technical Information Division
Publisher :
ISBN 13 :
Total Pages : 956 pages
Book Rating : 4.:/5 (317 download)
Download or read book NASA Scientific and Technical Reports and Publications for 1969 - A Selected Listing written by United States. National Aeronautics and Space Administration. Scientific and Technical Information Division and published by . This book was released on 1970 with total page 956 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Calvin H. Carter
Publisher :
ISBN 13 :
Total Pages : 908 pages
Book Rating : 4.X/5 (6 download)
Download or read book Silicon Carbide and Related Materials--1999 written by Calvin H. Carter and published by . This book was released on 2000 with total page 908 pages. Available in PDF, EPUB and Kindle. Book excerpt: This two-volume set contains written versions of papers presented at the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99) held October 10-15, 1999, at Research Triangle Park, North Carolina. They contain 401 papers, 19 of which were invited.
Author : Air Force Cambridge Research Laboratories (U.S.)
Publisher :
ISBN 13 :
Total Pages : 384 pages
Book Rating : 4.3/5 (91 download)
Download or read book Report on Research at AFCRL. written by Air Force Cambridge Research Laboratories (U.S.) and published by . This book was released on 1970 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : H. C. Freyhardt
Publisher : Springer Science & Business Media
ISBN 13 : 3642698662
Total Pages : 152 pages
Book Rating : 4.6/5 (426 download)
Download or read book Growth and Defect Structures written by H. C. Freyhardt and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt: Polytypic crystals of semiconductors, dielectrics and magnetic materials attract an increasing attention in science and technology. On one hand, the phenomenon of polyty pism is one of the fundamental problems of solid-state physics; its solution would make it possible to elucidate- the problem of the interconnection of different structures and intraatomic forces acting in crystals. On the other hand, the polytypic difference in crystals is most strongly expressed in electro-physical properties, which makes their application promising, mainly in semiconductor electronics. Thus, the difficulties of pro ducing modulated structures in polytypic crystals can be overcome since these crystals form a class of one-dimensional natural superlattices. At present it has become clear that polytypism in crystals and compounds is the rule rather than an exception and it is determined by the conditions of their synthesis. This phenomenon seems to be rather widespread in nature and fundamental for crystal forma tion. H polytypism was recently thought to be but a specific structural feature of a few substances such as SiC, ZnS, CdI , etc. , by now this phenomenon has been discovered in 2 v an increasing range of crystalline substances, for example, in silicon, diamond, AIIIB , VI AIIB , AIBVII compounds, in ternary semiconducting compounds, metals, silicates, perovskites, mica, organic crystals. The more accurately the structural studies are per formed, the greater is the number of crystals of various substances found to exhibit the phenomenon of polytypism. Recently, excellent surveys have systematized our knowledge of polytypism.
