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Author : Michael A. Mastro
Publisher :
ISBN 13 :
Total Pages : 330 pages
Book Rating : 4.:/5 (492 download)
Download or read book Growth and Characterization of Thin and Thick Gallium Nitride written by Michael A. Mastro and published by . This book was released on 2001 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Dirk Ehrentraut
Publisher : Springer Science & Business Media
ISBN 13 : 3642048307
Total Pages : 337 pages
Book Rating : 4.6/5 (42 download)
Download or read book Technology of Gallium Nitride Crystal Growth written by Dirk Ehrentraut and published by Springer Science & Business Media. This book was released on 2010-06-14 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Author : Jian Zhong Ren
Publisher :
ISBN 13 :
Total Pages : 280 pages
Book Rating : 4.:/5 (438 download)
Download or read book Growth and Characterization of Titanium Gallium Nitride Thin Films by Pulsed Laser Deposition written by Jian Zhong Ren and published by . This book was released on 1998 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Michael Shur
Publisher : World Scientific
ISBN 13 : 9789812562364
Total Pages : 310 pages
Book Rating : 4.5/5 (623 download)
Download or read book GaN-based Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2004 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.
Author : Priti Singh
Publisher :
ISBN 13 :
Total Pages : 208 pages
Book Rating : 4.:/5 (64 download)
Download or read book Growth and Characterization of Epitaxial Gallium Nitride Thin Flims Prepared by Magnetron Sputter Epitaxy written by Priti Singh and published by . This book was released on 1997 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Muhammad Esmed Alif Samsudin
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (96 download)
Download or read book Growth and Characterization of Gallium Nitride Films on Porous Silicon Substrate written by Muhammad Esmed Alif Samsudin and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Chih-Hsun Wei
Publisher :
ISBN 13 : 9780599613294
Total Pages : 131 pages
Book Rating : 4.6/5 (132 download)
Download or read book Growth and Characterization of Gallium Nitride and Boron Gallium Nitride by Metalorganic Chemical Vapor Deposition written by Chih-Hsun Wei and published by . This book was released on 1999 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Robert F Davis
Publisher : World Scientific
ISBN 13 : 9814482692
Total Pages : 295 pages
Book Rating : 4.8/5 (144 download)
Download or read book Gan-based Materials And Devices: Growth, Fabrication, Characterization And Performance written by Robert F Davis and published by World Scientific. This book was released on 2004-05-07 with total page 295 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.
Author : Adrian Lawrence Holmes
Publisher :
ISBN 13 :
Total Pages : 90 pages
Book Rating : 4.:/5 (315 download)
Download or read book The growth and characterization of gallium nitride epitaxial layers grown by low pressure metalorganic chemical vapor deposition written by Adrian Lawrence Holmes and published by . This book was released on 1994 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jeffrey David Hartman
Publisher :
ISBN 13 :
Total Pages : 219 pages
Book Rating : 4.:/5 (451 download)
Download or read book Characterization of the Growth of Aluminum Nitride and Gallium Nitride Thin Films on Hydrogen Etched And/or Cleaned 6H-SiC(0001) Surfaces written by Jeffrey David Hartman and published by . This book was released on 2000 with total page 219 pages. Available in PDF, EPUB and Kindle. Book excerpt: Keywords: 6H-SiC, Hydrogen etching, Aluminum nitride, Gallium nitride, Photo-electron emission microscopy, Chemical vapor deposition, Molecular beam epitaxy.
Author : Michael D. Reed
Publisher :
ISBN 13 :
Total Pages : 524 pages
Book Rating : 4.:/5 (54 download)
Download or read book Growth and Characterization of Free-standing Gallium Nitride Substrates by the Hydride-metalorganic Vapor Phase Epitaxy Technique written by Michael D. Reed and published by . This book was released on 2002 with total page 524 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Biemann Alexander Martin
Publisher :
ISBN 13 :
Total Pages : 208 pages
Book Rating : 4.:/5 (841 download)
Download or read book Epitaxial Growth and Characterization of Gallium Nitride Films on SI(111) written by Biemann Alexander Martin and published by . This book was released on 2005 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: Group III-nitrides, and in particular, aluminum nitride (AIN), gallium nitride (GaN), and indium nitride (InN) make up a class of compound semiconductors with direct bandgaps ranging from 1.2 electron volts to 6.2 electron volts (eV). They afford a broad range of applications including light emitting diodes (LED's) and laser diodes (LD's) emitting from the visible to the ultraviolet (UV) portions of the electromagnetic spectrum, radiation detectors, and high power, high frequency electronic devices capable of operating at high temperatures, and in hostile chemical environments. Materials studied in this work were grown on silicon substrates, Si(111) by Molecular Beam Epitaxy (MBE) under a broad range of growth parameters and characterized using X-ray diffraction (XRD), Energy Dispersive Spectroscopy (EDS), Atomic Force Microscopy (AFM), Photoluminescence (PL), and four-point probe resistivity measurements. Growth began with deposition of 0.3 monolayer (ML) of Al on the Si(111)7x7 surface leading to fully passivated Si(111) [root of]3x[root of]3-Al surface. Next, an AIN buffer layer and then the GaN layers were deposited. X-ray measurements indicated growth of single-crystalline hexagonal GaN(001) while PL measurement demonstrated a peak position corresponding to bulk hexagonal-GaN. Sample morphology and resistivity showed a strong dependence on growth conditions. The layer RMS roughness increased with increasing thickness for samples grown with low atomic-nitrogen (N) to molecular N ratio while smoother layers were obtained at the highest atomic N concentrations. Un-intentionally doped layers were n-type. P-type doping was achieved by doping with Mg.
Author : Lorelle M. Mansfield
Publisher :
ISBN 13 :
Total Pages : 133 pages
Book Rating : 4.:/5 (428 download)
Download or read book Gallium Nitride Nanowire Growth and Characterization written by Lorelle M. Mansfield and published by . This book was released on 2009 with total page 133 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Chiao-Yi Hwang
Publisher :
ISBN 13 :
Total Pages : 326 pages
Book Rating : 4.:/5 (551 download)
Download or read book Growth and Characterization of Gallium Nitride on (0001) Sapphire by Plasma Enhanced Atomic Layer Epitaxy and by Low Pressure Metalorganic Chemical Vapor Deposition written by Chiao-Yi Hwang and published by . This book was released on 1996 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : P. Phanikumar Konkapaka
Publisher :
ISBN 13 : 9780542350719
Total Pages : 131 pages
Book Rating : 4.3/5 (57 download)
Download or read book Bulk Gallium Nitride Growth and Characterization written by P. Phanikumar Konkapaka and published by . This book was released on 2005 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt: It was found that kinetics of decomposition of pure GaN powder without oxygen resulted in incongruent evaporation leading to the formation of the liquid gallium in the powder. A flow through configuration was also used because of its high collection efficiency of growth species. A mixture of Ga 2O3 and carbon powder as well as commercial GaN powder was used as precursors of gallium suboxide in this configuration. This configuration also demonstrated growth rates that are comparable to flow over configuration.
Author :
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (453 download)
Download or read book Large Area Lateral Epitaxial Overgrowth (LEO) of Gallium Nitride (GaN) Thin Films on Silicon Substrates and Their Characterization written by and published by . This book was released on 1999 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium nitride films have been grown on 6H-SiC substrates employing a new form of selective lateral epitaxy, namely pendeo-epitaxy. This technique forces regrowth to start exclusively on sidewalls of GaN seed structures. Both discrete pendeo-epitaxial microstructures and coalesced single crystal layers of GaN have been achieved. Analysis by SEM and TEM are used to evaluate the morphology of the resulting GaN films. Process routes leading to GaN pendeo-epitaxial growth using silicon substrates have also been achieved and the preliminary results are discussed.
Author : Tania Alicia Henry
Publisher :
ISBN 13 :
Total Pages : 288 pages
Book Rating : 4.:/5 (775 download)
Download or read book Novel Approach to the Growth and Characterization of Aligned Epitaxial Gallium Nitride Nanowires written by Tania Alicia Henry and published by . This book was released on 2010 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt:
