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Author : Stella Pang
Publisher :
ISBN 13 :
Total Pages : 160 pages
Book Rating : 4.:/5 (812 download)
Download or read book Generation of Interface States in the Si-SiO2 System by Passage of Electrons written by Stella Pang and published by . This book was released on 1982 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : P. Balk
Publisher : Elsevier Publishing Company
ISBN 13 :
Total Pages : 376 pages
Book Rating : 4.3/5 (91 download)
Download or read book The Si-SiO2 System written by P. Balk and published by Elsevier Publishing Company. This book was released on 1988 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Si-SiO 2 system has been the subject of concentrated research for over 25 years, particularly because of its key role in silicon integrated circuits. However, only a few comprehensive treatises on this field have been published in recent years. This book focuses on the materials science and technology aspects of the system. Its aim is to give a comprehensive overview of the topic, including an extensive list of references giving easy access to the literature. After an introductory chapter which reviews the Si-SiO 2 system from the perspective of other semiconductor-insulator combinations of technical interest, the technology of oxide preparation is discussed. Fundamental questions regarding the structure and chemistry of the interfacial region are then addressed. Two chapters are concerned with system properties: one deals with the physico-chemical, electrical and device-related characteristics and the way these are affected by the technology of oxide preparation; a second chapter focuses on point defects and charge trapping. The book concludes with a broad review of the techniques available for electrical characterization of the system, including the physical background.
Author : Genda Hu
Publisher :
ISBN 13 :
Total Pages : 216 pages
Book Rating : 4.:/5 (582 download)
Download or read book Study of the Generation of Interface States in the Si-SiO2 System After High-field Stress and After X-irradiation written by Genda Hu and published by . This book was released on 1980 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Kenneth Jzyh-kang Wu
Publisher :
ISBN 13 :
Total Pages : 258 pages
Book Rating : 4.:/5 (849 download)
Download or read book Temperature- and Field-dependence of the Generation of Interface States in the Si-SiO2 System written by Kenneth Jzyh-kang Wu and published by . This book was released on 1983 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : B.E. Deal
Publisher : Springer Science & Business Media
ISBN 13 : 1489915885
Total Pages : 505 pages
Book Rating : 4.4/5 (899 download)
Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-09 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
Author : Hisham Z. Massoud
Publisher :
ISBN 13 :
Total Pages : 804 pages
Book Rating : 4.3/5 (91 download)
Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface-3, 1996 written by Hisham Z. Massoud and published by . This book was released on 1996 with total page 804 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Hing Wong
Publisher :
ISBN 13 :
Total Pages : 62 pages
Book Rating : 4.:/5 (843 download)
Download or read book Implantation Induced Charge Trapping and Interface States Generation in Si-SiO2 System written by Hing Wong and published by . This book was released on 1986 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 860 pages
Book Rating : 4.F/5 ( download)
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2003 with total page 860 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Hisham Z. Massoud
Publisher :
ISBN 13 :
Total Pages : 562 pages
Book Rating : 4.3/5 (91 download)
Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--4, 2000 written by Hisham Z. Massoud and published by . This book was released on 2000 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : G. Lucovsky
Publisher : Pergamon
ISBN 13 :
Total Pages : 392 pages
Book Rating : 4.X/5 (1 download)
Download or read book The Physics of MOS Insulators written by G. Lucovsky and published by Pergamon. This book was released on 1980 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Umesh Mishra
Publisher : Springer Science & Business Media
ISBN 13 : 1402064802
Total Pages : 583 pages
Book Rating : 4.4/5 (2 download)
Download or read book Semiconductor Device Physics and Design written by Umesh Mishra and published by Springer Science & Business Media. This book was released on 2007-11-28 with total page 583 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Device Physics and Design teaches readers how to approach device design from the point of view of someone who wants to improve devices and can see the opportunity and challenges. It begins with coverage of basic physics concepts, including the physics behind polar heterostructures and strained heterostructures. The book then details the important devices ranging from p-n diodes to bipolar and field effect devices. By relating device design to device performance and then relating device needs to system use the student can see how device design works in the real world.
Author : Prashant U. Kenkare
Publisher :
ISBN 13 :
Total Pages : 194 pages
Book Rating : 4.:/5 (84 download)
Download or read book Charge Transport and Interface State Generation in Irradiated Si-SiO2 Structures written by Prashant U. Kenkare and published by . This book was released on 1990 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 8 pages
Book Rating : 4.:/5 (893 download)
Download or read book Electron Induced Depassivation of H and D Terminated Si/SiO2 Interfaces written by and published by . This book was released on 1997 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: The authors have performed electron spin resonance and electrical measurements on SiO2/Si structures subjected to anneals in 5% H2/N2 or 5% D2/N2 gases and subsequently injected with electrons using corona ions and ultra-violet radiation. Threshold voltage and transconductance measurements have also been made on 0.25 [mu]m metal-oxide-semiconductor transistors subjected to 400 C anneals in the same gases and subsequently aged by hot electron injection. The electrical data on SiO2/Si structures indicates that the density of interface states increases as a result of electron injection but that there are only minor differences between H and D passivated interfaces. The data on P{sub b}, trivalent Si dangling bond, centers at the same interfaces observed by electron spin resonance is insufficiently accurate to enable them to observe any significant differences. The hot electron injection experiments on transistors, consistent with other authors, indicate that, for the limited number of measurements they have made, the transistor aging resulting from the generation of interface states is significantly reduced for devices annealed in the D containing gas as compared to those annealed in the H containing gas. The origins of some potential differences in annealing behavior between the SiO2/Si structures and the 0.25 [mu]m transistors are suggested.
Author :
Publisher :
ISBN 13 :
Total Pages : 716 pages
Book Rating : 4.:/5 (31 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : B. E. Deal
Publisher :
ISBN 13 :
Total Pages : 47 pages
Book Rating : 4.:/5 (227 download)
Download or read book Structural and Electrical Investigation of the Si-SiO2 Interface in Thermally Oxidized Silicon written by B. E. Deal and published by . This book was released on 1979 with total page 47 pages. Available in PDF, EPUB and Kindle. Book excerpt: The dependence of fixed oxide charge density (Q sub ss)/q), interface state density (N sub st), and electron spin resonance P sub b signals on thermal oxidation process variables as well as their interrelationship has been investigated. Both n- and p-type silicon substrates having (111) and (100) orientation were employed in this study. Measurement techniques included conventional 1 MHz capacitance-voltage (C-V) analysis, quasistatic C-V analysis, and electron spin resonance. The oxide charges resulting from postoxidation in situ anneal in nitrogen were found to be similar in nature and magnitude to those obtained following a similar treatment in argon. Some reduction in N sub st was observed for thicker oxides following a post-metallization H2 anneal. Strong evidence is obtained for a proportionality between ESR signals and interface states density with varying process parameters modifying the P sub b to N sub st relationship. The effects of iron ion implantation (before or after oxidation) on oxide charges and P sub b signals has also been investigated. This work, in addition to clarifying the relationship between fixed oxide charges, interface states, and ESR P sub b signals, demonstrates the significance of ESR as a tool in the characterization of the Si-SiO2 system. (Author).
Author : Shoue-Jen Wang
Publisher :
ISBN 13 :
Total Pages : 140 pages
Book Rating : 4.:/5 (817 download)
Download or read book Relationship Between Hole Trapping and Interface State Generation in Si/SiO2 Structures written by Shoue-Jen Wang and published by . This book was released on 1988 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Robert Pasternak
Publisher :
ISBN 13 :
Total Pages : 220 pages
Book Rating : 4.:/5 (76 download)
Download or read book Charge Carrier Dynamics in Si/SiO2 Studied by Electric Field Induced Second-harmonic Generation written by Robert Pasternak and published by . This book was released on 2005 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt:
