Gallium Nitride Gan Specific Mechanical Phenomena And Their Influence On Reliability In Power Hemt Operation

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Power GaN Devices

Author : Matteo Meneghini
Publisher : Springer
ISBN 13 : 3319431994
Total Pages : 383 pages
Book Rating : 4.3/5 (194 download)

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Book Synopsis Power GaN Devices by : Matteo Meneghini

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Applied Reliability for Industry 3

Author : Abdelkhalak El Hami
Publisher : John Wiley & Sons
ISBN 13 : 178630693X
Total Pages : 212 pages
Book Rating : 4.7/5 (863 download)

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Book Synopsis Applied Reliability for Industry 3 by : Abdelkhalak El Hami

Download or read book Applied Reliability for Industry 3 written by Abdelkhalak El Hami and published by John Wiley & Sons. This book was released on 2023-05-09 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:

GaN Transistors for Efficient Power Conversion

Author : Alex Lidow
Publisher : John Wiley & Sons
ISBN 13 : 1119594421
Total Pages : 518 pages
Book Rating : 4.1/5 (195 download)

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Book Synopsis GaN Transistors for Efficient Power Conversion by : Alex Lidow

Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2019-08-12 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.

Wide Bandgap Based Devices

Author : Farid Medjdoub
Publisher : MDPI
ISBN 13 : 3036505660
Total Pages : 242 pages
Book Rating : 4.0/5 (365 download)

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Book Synopsis Wide Bandgap Based Devices by : Farid Medjdoub

Download or read book Wide Bandgap Based Devices written by Farid Medjdoub and published by MDPI. This book was released on 2021-05-26 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices

Gallium Nitride Power Devices

Author : Hongyu Yu
Publisher : CRC Press
ISBN 13 : 1351767607
Total Pages : 301 pages
Book Rating : 4.3/5 (517 download)

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Book Synopsis Gallium Nitride Power Devices by : Hongyu Yu

Download or read book Gallium Nitride Power Devices written by Hongyu Yu and published by CRC Press. This book was released on 2017-07-06 with total page 301 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.

Advanced Silicon Carbide Devices and Processing

Author : Stephen Saddow
Publisher : BoD – Books on Demand
ISBN 13 : 9535121685
Total Pages : 260 pages
Book Rating : 4.5/5 (351 download)

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Book Synopsis Advanced Silicon Carbide Devices and Processing by : Stephen Saddow

Download or read book Advanced Silicon Carbide Devices and Processing written by Stephen Saddow and published by BoD – Books on Demand. This book was released on 2015-09-17 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the production of the first commercially available blue LED in the late 1980s, silicon carbide technology has grown into a billion-dollar industry world-wide in the area of solid-state lighting and power electronics. With this in mind we organized this book to bring to the attention of those well versed in SiC technology some new developments in the field with a particular emphasis on particularly promising technologies such as SiC-based solar cells and optoelectronics. We have balanced this with the more traditional subjects such as power electronics and some new developments in the improvement of the MOS system for SiC MOSFETS. Given the importance of advanced microsystems and sensors based on SiC, we also included a review on 3C-SiC for both microsystem and electronic applications.

Principles of the Theory of Solids

Author : J. M. Ziman
Publisher : Cambridge University Press
ISBN 13 : 1139642804
Total Pages : 456 pages
Book Rating : 4.1/5 (396 download)

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Book Synopsis Principles of the Theory of Solids by : J. M. Ziman

Download or read book Principles of the Theory of Solids written by J. M. Ziman and published by Cambridge University Press. This book was released on 1979-11-29 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt: Professor Ziman's classic textbook on the theory of solids was first pulished in 1964. This paperback edition is a reprint of the second edition, which was substantially revised and enlarged in 1972. The value and popularity of this textbook is well attested by reviewers' opinions and by the existence of several foreign language editions, including German, Italian, Spanish, Japanese, Polish and Russian. The book gives a clear exposition of the elements of the physics of perfect crystalline solids. In discussing the principles, the author aims to give students an appreciation of the conditions which are necessary for the appearance of the various phenomena. A self-contained mathematical account is given of the simplest model that will demonstrate each principle. A grounding in quantum mechanics and knowledge of elementary facts about solids is assumed. This is therefore a textbook for advanced undergraduates and is also appropriate for graduate courses.

The Physics of Semiconductor Devices

Author : R. K. Sharma
Publisher : Springer
ISBN 13 : 3319976044
Total Pages : 1260 pages
Book Rating : 4.3/5 (199 download)

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Book Synopsis The Physics of Semiconductor Devices by : R. K. Sharma

Download or read book The Physics of Semiconductor Devices written by R. K. Sharma and published by Springer. This book was released on 2019-01-31 with total page 1260 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.

Handbook for III-V High Electron Mobility Transistor Technologies

Author : D. Nirmal
Publisher : CRC Press
ISBN 13 : 0429862520
Total Pages : 434 pages
Book Rating : 4.4/5 (298 download)

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Book Synopsis Handbook for III-V High Electron Mobility Transistor Technologies by : D. Nirmal

Download or read book Handbook for III-V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

GaN Power Devices and Applications

Author : Alex Lidow
Publisher :
ISBN 13 : 9780996649223
Total Pages : pages
Book Rating : 4.6/5 (492 download)

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Book Synopsis GaN Power Devices and Applications by : Alex Lidow

Download or read book GaN Power Devices and Applications written by Alex Lidow and published by . This book was released on 2021-10 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN Power Devices and Applications, provides an update on gallium nitride (GaN) technology and applications by leading experts. It includes detailed descriptions of the latest examples of GaN's usage in power supplies, lidar systems, motor drives, and space applications.

Uncertainty and Artificial Intelligence

Author : Abdelkhalak El Hami
Publisher : John Wiley & Sons
ISBN 13 : 1394255349
Total Pages : 144 pages
Book Rating : 4.3/5 (942 download)

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Book Synopsis Uncertainty and Artificial Intelligence by : Abdelkhalak El Hami

Download or read book Uncertainty and Artificial Intelligence written by Abdelkhalak El Hami and published by John Wiley & Sons. This book was released on 2023-11-28 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt: Today's information technology, along with Artificial Intelligence (AI), is moving towards total communication between all computerized systems. AI is a representation of human intelligence based on the creation and application of algorithms in specific computer environments. Its aim is to enable computers to act like human beings. For it to work, this type of technology requires computer systems, data with management systems and advanced algorithms, used by AI. In mechanical engineering, AI can offer many possibilities: in mechanical construction, predictive maintenance, plant monitoring, robotics, additive manufacturing, materials, vibration control and agro composites, among many others. This book is dedicated to Artificial Intelligence uncertainties in mechanical problems. Each chapter clearly sets out used and developed illustrative examples. Aimed at students, Uncertainty and Artificial Intelligence is also a valuable resource for practicing engineers and research lecturers.

Polarization Effects in Semiconductors

Author : Debdeep Jena
Publisher : Springer Science & Business Media
ISBN 13 : 0387368310
Total Pages : 523 pages
Book Rating : 4.3/5 (873 download)

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Book Synopsis Polarization Effects in Semiconductors by : Debdeep Jena

Download or read book Polarization Effects in Semiconductors written by Debdeep Jena and published by Springer Science & Business Media. This book was released on 2008 with total page 523 pages. Available in PDF, EPUB and Kindle. Book excerpt: Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices. The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.

Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Author : Gaudenzio Meneghesso
Publisher : Springer
ISBN 13 : 331977994X
Total Pages : 242 pages
Book Rating : 4.3/5 (197 download)

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Book Synopsis Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion by : Gaudenzio Meneghesso

Download or read book Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion written by Gaudenzio Meneghesso and published by Springer. This book was released on 2018-05-12 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.

Distributed Power Amplifiers for RF and Microwave Communications

Author : Narendra Kumar
Publisher : Artech House
ISBN 13 : 1608078329
Total Pages : 365 pages
Book Rating : 4.6/5 (8 download)

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Book Synopsis Distributed Power Amplifiers for RF and Microwave Communications by : Narendra Kumar

Download or read book Distributed Power Amplifiers for RF and Microwave Communications written by Narendra Kumar and published by Artech House. This book was released on 2015-06-01 with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt: This new resource presents readers with all relevant information and comprehensive design methodology of wideband amplifiers. This book specifically focuses on distributed amplifiers and their main components, and presents numerous RF and microwave applications including well-known historical and recent architectures, theoretical approaches, circuit simulation, and practical implementation techniques. A great resource for practicing designers and engineers, this book contains numerous well-known and novel practical circuits, architectures, and theoretical approaches with detailed description of their operational principles.

III-Nitride Electronic Devices

Author :
Publisher : Academic Press
ISBN 13 : 0128175443
Total Pages : 540 pages
Book Rating : 4.1/5 (281 download)

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Book Synopsis III-Nitride Electronic Devices by :

Download or read book III-Nitride Electronic Devices written by and published by Academic Press. This book was released on 2019-10-18 with total page 540 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more.

Physical Properties of III-V Semiconductor Compounds

Author : Sadao Adachi
Publisher : John Wiley & Sons
ISBN 13 : 9780471573296
Total Pages : 342 pages
Book Rating : 4.5/5 (732 download)

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Book Synopsis Physical Properties of III-V Semiconductor Compounds by : Sadao Adachi

Download or read book Physical Properties of III-V Semiconductor Compounds written by Sadao Adachi and published by John Wiley & Sons. This book was released on 1992-11-10 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.

Wafer Bonding

Author : Marin Alexe
Publisher : Springer Science & Business Media
ISBN 13 : 9783540210498
Total Pages : 524 pages
Book Rating : 4.2/5 (14 download)

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Book Synopsis Wafer Bonding by : Marin Alexe

Download or read book Wafer Bonding written by Marin Alexe and published by Springer Science & Business Media. This book was released on 2004-05-14 with total page 524 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the past decade direct wafer bonding has developed into a mature materials integration technology. This book presents state-of-the-art reviews of the most important applications of wafer bonding written by experts from industry and academia. The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.