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Gallium Nitride Based Power Electronic Converter Design Prototyping And Testing For Automotive Power Management And Renewable Energy Applications
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Book Synopsis Gallium-Nitride-Based Power Electronic Converter Design, Prototyping and Testing for Automotive Power Management and Renewable Energy Applications by : Shayan Dargahi
Download or read book Gallium-Nitride-Based Power Electronic Converter Design, Prototyping and Testing for Automotive Power Management and Renewable Energy Applications written by Shayan Dargahi and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Aspencore Guide to Gallium Nitride by : Maurizio Di Paolo Emilio
Download or read book Aspencore Guide to Gallium Nitride written by Maurizio Di Paolo Emilio and published by . This book was released on 2021-01-20 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt: As silicon reaches its theoretical performance limits for power electronics, industry is shifting toward wide-bandgap materials like Gallium Nitride (GaN), whose properties provide clear benefits in power converters for consumer and industrial electronics. In over 150 pages covering the technology, its applications, markets and future potential, this book delves into GaN technology and its importance for power electronics professionals engaged with its implementation in power devices. The properties of GaN, such as low leakage current, significantly reduced power losses, higher power density and the ability to tolerate higher operating temperatures, all from a device smaller than its silicon-only equivalent, provide design advantages allowing previously unimaginable application performance. As an alternative to silicon, GaN can provide clear benefits in power converters for consumer and industrial electronics; chargers for wireless devices, including 5G; driver circuits for motor control; and power switches in automotive and space applications.The book also explores why GaN-based devices hold the key to addressing the energy efficiency agenda, a key strategic initiative in increasingly power-reliant industries such as data centers, electric vehicles, and renewable energy systems. Highly efficient residential and commercial energy storage systems using GaN technology will enable distribution, local storage, and on-demand access to renewable energy. Continued progress in the battery market will lead to declining battery costs and the development of smaller batteries that pair with GaN technology-based converters and inverters. Thermal management is critical in power electronics, and high efficiency in higher-power systems is always a focus. With GaN, a 50% reduction in losses can be achieved, reducing the costs and area required to manage heat. The book delves into GaN's electrical characteristics and how these can be exploited in power devices. There are also chapters that cross into the key applications for GaN devices for several markets such as space, automotive, audio, motor control and data centers. Each chapter provides a comprehensive overview of the subject matter for anyone who wants to stay on the leading edge of power electronics.
Book Synopsis Emerging Power Converters for Renewable Energy and Electric Vehicles by : Md Rabiul Islam
Download or read book Emerging Power Converters for Renewable Energy and Electric Vehicles written by Md Rabiul Islam and published by CRC Press. This book was released on 2021-04-22 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers advancements of power electronic converters and their control techniques for grid integration of large-scale renewable energy sources and electrical vehicles. Major emphasis are on transformer-less direct grid integration, bidirectional power transfer, compensation of grid power quality issues, DC system protection and grounding, interaction in mixed AC/DC system, AC and DC system stability, magnetic design for high-frequency high power density systems with advanced soft magnetic materials, modelling and simulation of mixed AC/DC system, switching strategies for enhanced efficiency, and protection and reliability for sustainable grid integration. This book is an invaluable resource for professionals active in the field of renewable energy and power conversion.
Book Synopsis Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion by : Gaudenzio Meneghesso
Download or read book Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion written by Gaudenzio Meneghesso and published by Springer. This book was released on 2018-05-12 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.
Book Synopsis Gallium Nitride And Silicon Carbide Power Devices by : B Jayant Baliga
Download or read book Gallium Nitride And Silicon Carbide Power Devices written by B Jayant Baliga and published by World Scientific Publishing Company. This book was released on 2016-12-12 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.
Book Synopsis Impedance Source Power Electronic Converters by : Yushan Liu
Download or read book Impedance Source Power Electronic Converters written by Yushan Liu and published by John Wiley & Sons. This book was released on 2016-10-03 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: Impedance Source Power Electronic Converters brings together state of the art knowledge and cutting edge techniques in various stages of research related to the ever more popular impedance source converters/inverters. Significant research efforts are underway to develop commercially viable and technically feasible, efficient and reliable power converters for renewable energy, electric transportation and for various industrial applications. This book provides a detailed understanding of the concepts, designs, controls, and application demonstrations of the impedance source converters/inverters. Key features: Comprehensive analysis of the impedance source converter/inverter topologies, including typical topologies and derived topologies. Fully explains the design and control techniques of impedance source converters/inverters, including hardware design and control parameter design for corresponding control methods. Presents the latest power conversion solutions that aim to advance the role of power electronics into industries and sustainable energy conversion systems. Compares impedance source converter/inverter applications in renewable energy power generation and electric vehicles as well as different industrial applications. Provides an overview of existing challenges, solutions and future trends. Supported by calculation examples, simulation models and results. Highly accessible, this is an invaluable resource for researchers, postgraduate/graduate students studying power electronics and its application in industry and renewable energy conversion as well as practising R&D engineers. Readers will be able to apply the presented material for the future design of the next generation of efficient power electronic converters/inverters.
Book Synopsis Gallium Nitride Power Devices by : Hongyu Yu
Download or read book Gallium Nitride Power Devices written by Hongyu Yu and published by CRC Press. This book was released on 2017-07-06 with total page 301 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.
Book Synopsis Gallium Nitride (GaN) by : Farid Medjdoub
Download or read book Gallium Nitride (GaN) written by Farid Medjdoub and published by CRC Press. This book was released on 2017-12-19 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.
Book Synopsis A Methodology for Designing SiC and GaN Device Based Converters for Automotive Applications by : Joao Soares de Oliveira
Download or read book A Methodology for Designing SiC and GaN Device Based Converters for Automotive Applications written by Joao Soares de Oliveira and published by . This book was released on 2021 with total page 209 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide band-gap (WBG) devices enable power converter designs at higher frequency, power density, and efficiency, as compared to silicon-based converters. The coexistence for SiC (Silicon Carbide) and GaN (Gallium Nitride) devices in the ranges 600-900 V motivates a specific study of these components and the development of methods to perform better selection relying on the application, particularly for automotive applications. The proposed methodology starts with static and dynamic tests performed on SiC and GaN devices to validate their models. GaN power devices allow the building of the most integrated converters. Here, an instrumented PCB (Printed Circuit Board) is developed to measure and estimate switching losses including the measurement points needed for this purpose. The parasitic elements of the PCB layout extracted by ANSYS Q3D and the measurement instrument models are also included in the simulation model. Thus, by means of an experimentally validated model, it will be possible to evaluate the total losses in an optimized circuit without probes. Meanwhile, for SiC devices, an evaluation board is used, and an estimating method for inductance parasitic extraction is performed. The switching loss estimation is an important step for power converter design. Moreover, the consequences of faster switching on the gate driver design and board layout generate new challenges for WBG-based converters. An accurate switching loss estimation is a helpful step because it allows for the adjustment of different circuit layouts based on the simulation results. However, the instrumented PCB does not predict the switching losses in an optimized converter, but only on the instrumented PCB. The simulation enables the prediction of switching losses in more realistic converters. Finally, a simulation for each target device (SiC and GaN) is developed considering the main parasitic elements and the measurement instrument models. Thus, the switching losses are computed and compared to experimental results. Since the whole system is validated, to compare the SiC and GaN devices for automotive applications, an optimized DC-DC converter simulation is used for comparing each device under different operation points of the converter.
Book Synopsis Gallium Nitride Electronics by : Rüdiger Quay
Download or read book Gallium Nitride Electronics written by Rüdiger Quay and published by Springer Science & Business Media. This book was released on 2008-04-05 with total page 492 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.
Book Synopsis Gallium Nitride and Silicon Carbide Power Technologies 4 by : K. Shenai
Download or read book Gallium Nitride and Silicon Carbide Power Technologies 4 written by K. Shenai and published by The Electrochemical Society. This book was released on with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Nitride and Silicon Carbide Power Technologies by : K. Shenai
Download or read book Gallium Nitride and Silicon Carbide Power Technologies written by K. Shenai and published by The Electrochemical Society. This book was released on 2011 with total page 361 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design and Analysis of Switched-capacitor Based Partial Power Architecture for Radio Frequency DC-DC Power Conversion with Gallium Nitride Power Devices by :
Download or read book Design and Analysis of Switched-capacitor Based Partial Power Architecture for Radio Frequency DC-DC Power Conversion with Gallium Nitride Power Devices written by and published by . This book was released on 2016 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis investigates a new reconfigurable switched-capacitor (SC) based partial power architecture which enhances the performance of resonant DC/DC converters operating at radio frequency (RF) with gallium nitride (GaN) power devices to address challenges in telecommunication brick DC/DC converters. The proposed architecture has a comprehensive compatibility with existing RF and SC topologies and improves the performance of RF converters through partitioning of energy conversion stage and output regulation stage. Emerging new wide bandgap devices like GaN FETs enable a higher power density DC/DC converter design. A wider input range, larger voltage conversion ratio, smaller size, and excellent transient performance are expected. The prototype of the proposed GaN reconfigurable SC-based partial power RF converter comprises of a 20 MHz resonant single-ended-primary-inductor-converter (SEPIC) as a regulated stage and a high-efficiency 2 MHz reconfigurable SC as an unregulated stage. The GaN RF resonant SEPIC regulates the output using a robust ON/OFF control scheme, which enables fast transient responses. The high-efficiency GaN reconfigurable SC provides 1:1, 2:1 and 3:1 voltage conversion ratio which widens the input voltage range. A full time-domain, closed-form analytical model for RF resonant SEPIC has been developed, and new design methodology has been proposed for the GaN reconfigurable SC to address the design challenges at megahertz. The electromagnetic interference (EMI) characteristics of the prototype have also been investigated and evaluated by experiments. An alternative control scheme and PCB layout guidelines have been developed for EMI reduction.
Book Synopsis Reconfigurable Switched-Capacitor Power Converters by : Dongsheng Ma
Download or read book Reconfigurable Switched-Capacitor Power Converters written by Dongsheng Ma and published by Springer Science & Business Media. This book was released on 2012-07-25 with total page 182 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers specializing in ultra-low power supply design for self-powered applications an invaluable reference on reconfigurable switched capacitor power converters. Readers will benefit from a comprehensive introduction to the design of robust power supplies for energy harvesting and self-power applications, focusing on the use of reconfigurable switched capacitor based DC-DC converters, which is ideal for such applications. Coverage includes all aspects of switched capacitor power supply designs, from fundamentals, to reconfigurable power stages, and sophisticated controller designs.
Book Synopsis Circuit Modeling and Performance Evaluation of GaN Power HEMT in DC-DC Converters by : Krushal S. Shah
Download or read book Circuit Modeling and Performance Evaluation of GaN Power HEMT in DC-DC Converters written by Krushal S. Shah and published by . This book was released on 2011 with total page 72 pages. Available in PDF, EPUB and Kindle. Book excerpt: The power generated by renewable sources such as solar photo-voltaic (PV) arrays and wind turbines is time varying and unpredictable. In order to minimize the wastage of power obtained from such sources, there is a great need of efficient power converters which are compact and can effectively manage power in Smart Grid applications. The design of such power converters would require the use of new semiconductor materials, novel device structures, improved switching and control circuits, and advanced packaging technologies. Wide bandgap materials are promising for RF/microwave and power switching electronics. Among these materials, III-V Nitrides - especially Gallium Nitride (GaN), and Silicon Carbide (SiC) are heavily investigated by industry because of their superior electrical and thermal properties, and improved radiation hardness compared to the standard semiconductor material -silicon. A smart DC microgrid suitable for high-penetration in commercial applications and that efficiently utilizes energy available from distributed, renewable generators is described. GaN HEMTs based converters should be incorporated in the DC microgrid. It iv is shown that the proposed DC power distribution system can produce savings in excess of 10-15% over the current approach that uses inverters. Performance evaluation between silicon MOSFET and GaN HEMT is presented for chip-scale and maximum peak power tracking DC-DC power converter applications. The current circuit model available for GaN HEMTs does not converge for converter topology. Thus circuit calculations are based on improved circuit model for the FET with accurate description of capacitances and thermal on-resistance. It is shown that GaN power HEMTs used in a synchronous buck converter topology (for a 19/1.2VDC, 7.2W) can potentially lead to nearly 77 % power conversion efficiency at 25°C when switched at 5 MHz. However, results show that the current formulation for loss calculation in the topology described is erroneous and so there is a need of new loss formulation and device selection criteria based on circuit dynamics and device parameters. Similarly simulations were carried out for a DC-DC boost converter topology (200/380VDC, 10kW) and it has been shown to have 93 % power conversion efficiency at 25°C when switched at 1 MHz. But using new semiconductors materials like GaN HEMT and SiC in this case causes high dv/dt stress on switch and diode during switching which may cause failure of device.
Book Synopsis Design and Improved Switching Transient Modeling for A GaN-based Three Phase Inverter by : Yang Luo
Download or read book Design and Improved Switching Transient Modeling for A GaN-based Three Phase Inverter written by Yang Luo and published by . This book was released on 2021 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, wide-bandgap devices (WBG) such as silicon carbide (SiC) and gallium nitride (GaN) transistors have drawn significant research attention in power conversion applications where higher efficiency, higher power density and lower cost are required, for example, in electric vehicle (EV) applications. Owing to its better figures of merit on on-resistance, switching speed and junction temperature, enhancement-mode GaN high electron mobility transistors (HEMTs) are able to be operated with switching frequency up to the megahertz range, through which the size of passive components in the power converters can be significantly reduced. Consequently, the power converter's integration level and power density can be increased. In GaN-based power converters, the switching energy loss increases naturally along with the switching frequency, which is the dominant loss component. Consequently, it is always one of the top priority performances to be considered in research and development activities. For device manufacturers, with access to internal materials and dimensional parameters, physics-based device models are usually used. Although these models can reveal detailed characteristics of the devices, they are not accessible to the public and can be very time-consuming to develop. Analytical models, that can emulate the transistor's dynamic behaviour and predict the switching energy loss without consuming too much computing resources, are always an essential tool to help provide guidelines to engineers for circuit design and performance optimization purposes. This thesis develops a computationally inexpensive and straightforward switching transient model which proves to be more accurate than conventional model through simulation and experiments. Currently, in the commercial market, there are only a few mature designs of GaN three-phase inverter products, and most of them are costly. This unavoidable phenomenon is led by the fact that the gate driver and power loop design for GaN is demanding. Some companies such as EPC, Navitas and Power Integrations are committed to monolithic-integrated gate drivers, but they are complex and expensive. Thus, this thesis also aims to design a GaN-based three-phase inverter with low cost and low complexity in the gate drive circuit. In addition, to achieve high performance GaN-based inverter, parasitic components in the power loop have to be minimized. In this thesis study, parasitic parameters of the power loop are extracted through Ansys Q3D simulation and then validated through experimental test results. With accurate parasitic parameters, the layout of the PCBs is improved to achieve better inverter performance.
Book Synopsis Vertical Gallium Nitride PowerDevices: Fabrication and Characterisation by : Rico Hentschel
Download or read book Vertical Gallium Nitride PowerDevices: Fabrication and Characterisation written by Rico Hentschel and published by BoD – Books on Demand. This book was released on 2021-01-03 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: Efficient power conversion is essential to face the continuously increasing energy consumption of our society. GaN based vertical power field effect transistors provide excellent performance figures for power-conversion switches, due to their capability of handling high voltages and current densities with very low area consumption. This work focuses on a vertical trench gate metal oxide semiconductor field effect transistor (MOSFET) with conceptional advantages in a device fabrication preceded GaN epitaxy and enhancement mode characteristics. The functional layer stack comprises from the bottom an n+/n--drift/p-body/n+-source GaN layer sequence. Special attention is paid to the Mg doping of the p-GaN body layer, which is a complex topic by itself. Hydrogen passivation of magnesium plays an essential role, since only the active (hydrogen-free) Mg concentration determines the threshold voltage of the MOSFET and the blocking capability of the body diode. Fabrication specific challenges of the concept are related to the complex integration, formation of ohmic contacts to the functional layers, the specific implementation and processing scheme of the gate trench module and the lateral edge termination. The maximum electric field, which was achieved in the pn- junction of the body diode of the MOSFET is estimated to be around 2.1 MV/cm. From double-sweep transfer measurements with relatively small hysteresis, steep subthreshold slope and a threshold voltage of 3 - 4 V a reasonably good Al2O3/GaN interface quality is indicated. In the conductive state a channel mobility of around 80 - 100 cm2/Vs is estimated. This value is comparable to device with additional overgrowth of the channel. Further enhancement of the OFF-state and ON-state characteristics is expected for optimization of the device termination and the high-k/GaN interface of the vertical trench gate, respectively. From the obtained results and dependencies key figures of an area efficient and competitive device design with thick drift layer is extrapolated. Finally, an outlook is given and advancement possibilities as well as technological limits are discussed.
