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Author : Wei Chen
Publisher :
ISBN 13 :
Total Pages : 388 pages
Book Rating : 4.:/5 (396 download)
Download or read book Ga Positive Focused Ion Beam Processing of Gallium Arsenide and Silicon written by Wei Chen and published by . This book was released on 1994 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Geoffrey A. Crow
Publisher :
ISBN 13 :
Total Pages : 330 pages
Book Rating : 4.:/5 (227 download)
Download or read book Focused Ion Beam Micromachining of Si and GaAs Using Ga and Au Liquid Metal Ion Sources written by Geoffrey A. Crow and published by . This book was released on 1990 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Kim M. Archuleta
Publisher :
ISBN 13 :
Total Pages : 190 pages
Book Rating : 4.:/5 (123 download)
Download or read book Analysis of Focused Gallium Ion Beam Interactions with Diamond, Silicon and Gallium Arsenide written by Kim M. Archuleta and published by . This book was released on 2006 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Laser and Electron Beam Processing of Silicon and Gallium Arsenide written by and published by . This book was released on 1979 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Laser (photon) and electron beams provide a controlled source of heat by which surface layers of silicon and gallium arsenide can be rapidly melted and cooled with rates exceeding 10/sup 80/C/sec. The melting process has been used to remove displacement damage in ion implanted Si and GaAs, to remove dislocations, loops and precipitates in silicon and to study impurity segregation and solubility limits. The mechanisms associated with various phenomena will be examined. The possible impact of laser and electron beam processing on device technology, particularly with respect to solar cells is discussed.
Author : L. E. Bradley
Publisher :
ISBN 13 :
Total Pages : 21 pages
Book Rating : 4.:/5 (227 download)
Download or read book Silicon Nitride Layers on Gallium Arsenide by Low Energy Ion Beam Sputtering written by L. E. Bradley and published by . This book was released on 1978 with total page 21 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low energy ion beam sputtering with argon was used to deposit layers of Si3N4 onto GaAs for encapsulation purposes. Mechanical stability to above 900 C has been achieved; silicon diffuses into the GaAs at 600 C and above; index of refraction is a simple, but reliable test of encapsulant quality. (Author).
Author : Stephen P. Tobin
Publisher :
ISBN 13 :
Total Pages : 130 pages
Book Rating : 4.:/5 (748 download)
Download or read book Preparation of Silicon Substrates for Gallium Arsenide Solar Cells by Electron Beam Pulse Processing written by Stephen P. Tobin and published by . This book was released on 1981 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past year we have developed a process for creating high-quality epitaxial layers of germanium on silicon substrates using rapid heating and cooling with a pulsed electron beam. This single-crystal germanium coating is the key to the production of high efficiency Ga-As solar cells on low-cost silicon substrates in an economical manner.
Author : N. J. Shah
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (593 download)
Download or read book Electron Beam Processing of Gallium Arsenide written by N. J. Shah and published by . This book was released on 1983 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Steven C. Moss
Publisher :
ISBN 13 :
Total Pages : 568 pages
Book Rating : 4.3/5 (91 download)
Download or read book Ion Beam Synthesis and Processing of Advanced Materials: Volume 647 written by Steven C. Moss and published by . This book was released on 2001-08-02 with total page 568 pages. Available in PDF, EPUB and Kindle. Book excerpt: The presentations during this November 2000 symposium emphasize the broad scientific and technological interest in ion-beam applications to synthesis and processing of advanced materials. A significant portion of the symposium addressed ion-beam processing and synthesis at the nano-scale, including work on nanocrystals, quantum dots, quantum wells, nanotubes, and self-organized structures, as well as heterostructures and other thin films. c. Book News Inc.
Author : Mark Edward Greiner
Publisher :
ISBN 13 :
Total Pages : 140 pages
Book Rating : 4.:/5 (386 download)
Download or read book Silicon Diffusion in Gallium Arsenide Using Rapid Thermal Processing written by Mark Edward Greiner and published by . This book was released on 1984 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Young-Soon Kim
Publisher :
ISBN 13 : 9780530006475
Total Pages : 196 pages
Book Rating : 4.0/5 (64 download)
Download or read book Gallium Arsenide on Silicon Substrate written by Young-Soon Kim and published by . This book was released on 2019-05-31 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: semiconductor wafers Dissertation Discovery Company and University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation, "Gallium Arsenide on Silicon Substrate" by Young-Soon Kim, was obtained from University of Florida and is being sold with permission from the author. A digital copy of this work may also be found in the university's institutional repository, IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.
Author : M. R. Brozel
Publisher : Inst of Engineering & Technology
ISBN 13 : 9780852968857
Total Pages : 981 pages
Book Rating : 4.9/5 (688 download)
Download or read book Properties of Gallium Arsenide written by M. R. Brozel and published by Inst of Engineering & Technology. This book was released on 1996 with total page 981 pages. Available in PDF, EPUB and Kindle. Book excerpt: It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book Properties of Gallium Arsenide. Since then, major developments have taken place. This third edition is comprised of 150 specially commissioned articles contributed by experts from the USA, Europe and Japan.
Author : Gordon Orvis Munns
Publisher :
ISBN 13 :
Total Pages : 148 pages
Book Rating : 4.:/5 (187 download)
Download or read book Molecular Beam Epitaxial Growth of Gallium Arsenide on Silicon written by Gordon Orvis Munns and published by . This book was released on 1987 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Mubinur Rahman Choudhury
Publisher :
ISBN 13 :
Total Pages : 108 pages
Book Rating : 4.:/5 (15 download)
Download or read book Profiles of Silicon in Ion-implanted Semi-insulating Gallium Arsenide written by Mubinur Rahman Choudhury and published by . This book was released on 1983 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Francesco Priolo
Publisher :
ISBN 13 :
Total Pages : 321 pages
Book Rating : 4.:/5 (615 download)
Download or read book New Trends in Ion Beam Processing of Materials written by Francesco Priolo and published by . This book was released on 1996 with total page 321 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 1102 pages
Book Rating : 4.X/5 (2 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1991 with total page 1102 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Gerry E. Hendershot
Publisher :
ISBN 13 : 9780840602220
Total Pages : 982 pages
Book Rating : 4.6/5 (22 download)
Download or read book Use of Services for Family Planning and Infertility, United States, 1982 written by Gerry E. Hendershot and published by . This book was released on 1988 with total page 982 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 1982 statistics on the use of family planning and infertility services presented in this report are preliminary results from Cycle III of the National Survey of Family Growth (NSFG), conducted by the National Center for Health Statistics. Data were collected through personal interviews with a multistage area probability sample of 7969 women aged 15-44. A detailed series of questions was asked to obtain relatively complete estimates of the extent and type of family planning services received. Statistics on family planning services are limited to women who were able to conceive 3 years before the interview date. Overall, 79% of currently mrried nonsterile women reported using some type of family planning service during the previous 3 years. There were no statistically significant differences between white (79%), black (75%) or Hispanic (77%) wives, or between the 2 income groups. The 1982 survey questions were more comprehensive than those of earlier cycles of the survey. The annual rate of visits for family planning services in 1982 was 1077 visits /1000 women. Teenagers had the highest annual visit rate (1581/1000) of any age group for all sources of family planning services combined. Visit rates declined sharply with age from 1447 at ages 15-24 to 479 at ages 35-44. Similar declines with age also were found in the visit rates for white and black women separately. Nevertheless, the annual visit rate for black women (1334/1000) was significantly higher than that for white women (1033). The highest overall visit rate was for black women 15-19 years of age (1867/1000). Nearly 2/3 of all family planning visits were to private medical sources. Teenagers of all races had higher family planning service visit rates to clinics than to private medical sources, as did black women age 15-24. White women age 20 and older had higher visit rates to private medical services than to clinics. Never married women had higher visit rates to clinics than currently or formerly married women. Data were also collected in 1982 on use of medical services for infertility by women who had difficulty in conceiving or carrying a pregnancy to term. About 1 million ever married women had 1 or more infertility visits in the 12 months before the interview. During the 3 years before interview, about 1.9 million women had infertility visits. For all ever married women, as well as for white and black women separately, infertility services were more likely to be secured from private medical sources than from clinics. The survey design, reliability of the estimates and the terms used are explained in the technical notes.
Author : John J. Melngailis
Publisher :
ISBN 13 :
Total Pages : 7 pages
Book Rating : 4.:/5 (227 download)
Download or read book Focused Ion Beam Fabrication of Graded Channel FET's (Field Effect Transistors) in GaAs and Si written by John J. Melngailis and published by . This book was released on 1986 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of this program is to fabricate field effect transistors in Silicon and GaAs in which the doping in the channel is varied as a function of distance from source to drain. The focused ion beam machine is a unique tool which is capable of producing such graded implants. In achieving this goal alignment procedures of the focused ion beam to existing features on the wafer have to be developed, and the focused ion beam implants must be characterized and compared to conventional implants. In addition, models of the behavior of the graded channel devices must be developed.
