Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Fuzzy And Multiple Valued Logic Circuit Applications Using Resonant Tunneling Diodes
Download Fuzzy And Multiple Valued Logic Circuit Applications Using Resonant Tunneling Diodes full books in PDF, epub, and Kindle. Read online Fuzzy And Multiple Valued Logic Circuit Applications Using Resonant Tunneling Diodes ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Book Synopsis Fuzzy and Multiple Valued Logic Circuit Applications Using Resonant Tunneling Diodes by : Hao Tang
Download or read book Fuzzy and Multiple Valued Logic Circuit Applications Using Resonant Tunneling Diodes written by Hao Tang and published by . This book was released on 1996 with total page 133 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Beyond Binary Memory Circuits by : Zarin Tasnim Sandhie
Download or read book Beyond Binary Memory Circuits written by Zarin Tasnim Sandhie and published by Springer Nature. This book was released on 2022-10-28 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with an overview of the fundamental definitions and features of Multiple-Valued Logic (MVL). The authors include a brief discussion of the historical development of MVL technologies, while the main goal of the book is to present a comprehensive review of different technologies that are being explored to implement multiple-valued or beyond-binary memory circuits and systems. The discussion includes the basic features, prospects, and challenges of each technology, while highlighting the significant works done on different branches of MVL memory architecture, such as sequential circuits, random access memory, Flash memory, etc.
Book Synopsis Fuzzy Systems and Data Mining V by : A.J. Tallón-Ballesteros
Download or read book Fuzzy Systems and Data Mining V written by A.J. Tallón-Ballesteros and published by IOS Press. This book was released on 2019-11-06 with total page 1186 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Fuzzy Systems and Data Mining (FSDM) conference is an annual event encompassing four main themes: fuzzy theory, algorithms and systems, which includes topics like stability, foundations and control; fuzzy application, which covers different kinds of processing as well as hardware and architectures for big data and time series and has wide applicability; the interdisciplinary field of fuzzy logic and data mining, encompassing applications in electrical, industrial, chemical and engineering fields as well as management and environmental issues; and data mining, outlining new approaches to big data, massive data, scalable, parallel and distributed algorithms. The annual conference provides a platform for knowledge exchange between international experts, researchers, academics and delegates from industry. This book includes the papers accepted and presented at the 5th International Conference on Fuzzy Systems and Data Mining (FSDM 2019), held in Kitakyushu, Japan on 18-21 October 2019. This year, FSDM received 442 submissions. All papers were carefully reviewed by program committee members, taking account of the quality, novelty, soundness, breadth and depth of the research topics falling within the scope of FSDM. The committee finally decided to accept 137 papers, which represents an acceptance rate of about 30%. The papers presented here are arranged in two sections: Fuzzy Sets and Data Mining, and Communications and Networks. Providing an overview of the most recent scientific and technological advances in the fields of fuzzy systems and data mining, the book will be of interest to all those working in these fields.
Book Synopsis Resonant-tunneling Diodes in High-performance Digital Circuit Applications by : Alejandro Flavio González
Download or read book Resonant-tunneling Diodes in High-performance Digital Circuit Applications written by Alejandro Flavio González and published by . This book was released on 2002 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ultra-Dense, Ultra-Fast Computing Components: Multiple-Value Logic Circuits with Resonant Tunneling Bipolar Transistors by :
Download or read book Ultra-Dense, Ultra-Fast Computing Components: Multiple-Value Logic Circuits with Resonant Tunneling Bipolar Transistors written by and published by . This book was released on 1997 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of the program was to develop multiple value logic for a 2:1 reduction in circuit complexity and a 2:1 increase in circuit speed. The approach was to achieve modulo-4 arithmetic in circuits based on resonant tunneling bipolar transistors. Because the multiple value functionality is integrated into the individual devices within the circuits, reductions in circuit complexity and propagation delays may be realized that might not otherwise be achieved. MBE and GSMBE were used to grown epitaxial structures that included AlGaAs-GaAs and InGaP-GaAs heterojunction bipolar transistors integrated with multiple barrier AlAs-GaAs-InGaAs resonant tunnel diodes. Collaborations were with Scientific Research Associates and the University of Michigan for device and circuit design, and with Georgia Tech for device characterization. Three RTD designs were demonstrated with peak to valley rations of 6 at 300K. An RTBT was fabricated that exhibited a bandwidth of 30 GHz. In addition, a novel epitaxial structure was proposed for a 'collector-up' RTBT configuration that will greatly simplify the processing involved in monolithic integration of RTD's and HBT's in multi-valued circuits. Finally, two multi-valued circuits were designed, simulated and tested in hybrid form. These were a 4-step counter and a 4:1 multiple valued multiplexer. Both functioned as designed. The counter, executed with only three transistors and one RTD, would have required more than three transistors to implement with binary CMOS logic circuitry.
Book Synopsis The Physics and Applications of Resonant Tunnelling Diodes by : Hiroshi Mizuta
Download or read book The Physics and Applications of Resonant Tunnelling Diodes written by Hiroshi Mizuta and published by Cambridge University Press. This book was released on 1995-09-14 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is the first to give a comprehensive description of the physics and applications of resonant tunneling diodes. The opening chapters of the book set out the basic principles of coherent tunneling theory. The authors describe in detail the effects of impurity scattering, femtosecond dynamics, non-equilibrium distribution, and intrinsic bistabilities. They review the applications of RTDs, such as in high-frequency signal generation and multi-valued data storage, and close the book with a chapter on the new field of resonant tunneling through laterally confined zero-dimensional structures. Covering all the key theoretical and experimental aspects of this active area of research, the book will be of great value to graduate students of quantum transport physics and device engineering, as well as to researchers in both these fields.
Book Synopsis High Frequency Circuit Applications of Resonant Tunneling Diodes by : Scott K. Diamond
Download or read book High Frequency Circuit Applications of Resonant Tunneling Diodes written by Scott K. Diamond and published by . This book was released on 1990 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Analog/digital Circuit Applications Using Resonant Tunneling Diodes by : Sen-Jung Wei
Download or read book Analog/digital Circuit Applications Using Resonant Tunneling Diodes written by Sen-Jung Wei and published by . This book was released on 1993 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Tunnel Diode Applications to Logic and Pulse Circuits by : I. W. Janney
Download or read book Tunnel Diode Applications to Logic and Pulse Circuits written by I. W. Janney and published by . This book was released on 1960 with total page 42 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Analytical Modeling of Silicon Based Resonant Tunneling Diode for RF Oscillator Application by : Emanuela Buccafurri
Download or read book Analytical Modeling of Silicon Based Resonant Tunneling Diode for RF Oscillator Application written by Emanuela Buccafurri and published by . This book was released on 2010 with total page 163 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the introduction in microelectronics of the MOS transistor, the trend has been to reduce the size of each device, in order to increase density and performance, and to reduce costs. Devices nowadays are in a range of dimensions governs by Quantum Physics. At the nano scale, it may be smarter to integrate new devices operating according to the law of quantum physics rather than to classical Physics. In this context, resonant tunneling diodes (RTDs) present interesting characteristics. Its maximum operating frequency is in the Terahertz range and offers a wide range of applications, in analog (analog-digital converter ADC, frequency divider or multiplier, oscillator as well as digital ("multi-value" logic) circuits. Its I-V characteristics present an unusual negative differential resistance (NDR). Such negative differential resistance is usually achieved by a circuit involving more devices, and significant power consumption. Like most of the other tunnel devices, the first RTD was realized on III-V materials. Nevertheless, difficulty to integrate III-V materials on silicon, pushed to find silicon compatible solution for RTD. In this work, an alternative option to integrate these innovative devices in a silicon process, exploiting the vertical transport (gate to gate) in a double gate MOSFET has been considered. The aim of this work is thus to estimate by the means of an original analytical models, the theoretical expected performances of silicon based RTDs (static and dynamic behavior) and to compare them with conventional heterostructures. The high operating frequency of RTD is one of the major advantages of this device, for this reason an accurate frequency analysis has been carried out in collaboration with the Universidad Autonoma de Barcelona in the Xavier Oriols team. Finally, this model has been introduced in a circuit simulator (CADENCE), and used to estimate the performances of RF oscillators based on silicon RTD.
Book Synopsis Proposal to Develop Resonant-Tunneling Diode Circuits Using Epitaxial Liftoff by :
Download or read book Proposal to Develop Resonant-Tunneling Diode Circuits Using Epitaxial Liftoff written by and published by . This book was released on 1999 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The program was to determine the potential performance advantages of integrating resonant tunneling diodes (RTDs) with complementary metal oxide semiconductor (CMOS) technology. In this program, a broad suite of circuits was fabricated and evaluated for logic memory, optoelectronic, and mixed-signal applications. We conclude that mixed-signal RT-CMOS circuits have performance advantages for niche applications in the short term, and broad use in logic when silicon-based RT technology reaches production maturity.
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2005 with total page 780 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Simulation of Double Barrier Resonant Tunneling Diodes by : Roy M. Porter
Download or read book Simulation of Double Barrier Resonant Tunneling Diodes written by Roy M. Porter and published by . This book was released on 1996 with total page 35 pages. Available in PDF, EPUB and Kindle. Book excerpt: The double barrier resonant tunneling diode (DBRTD) is one of several devices currently being considered by the semiconductor industry as a replacement for conventional very large scale integrated (VLSI) circuit technology when the latter reaches its currently perceived scaling limits. The DBRTD was one of the first and remains one of the most promising devices to exhibit a room temperature negative differential resistance (NDR); this non-linear device characteristic has innovative circuit applications that will enable further downsizing. Due to the expense of fabricating such devices, however, it is necessary to extensively model them prior to fabrication and testing. Two techniques for modeling these devices are discussed, the Thomas-Fermi and Poisson-Schroedinger theories. The two techniques are then compared using a model currently under development by Texas Instruments, Incorporated.
Book Synopsis Resonant Tunneling Diode Photonics by : Ironside Charlie
Download or read book Resonant Tunneling Diode Photonics written by Ironside Charlie and published by . This book was released on 2019 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Double Barrier Resonant Tunneling Diodes and Applications by : Azzouz Sellai
Download or read book Double Barrier Resonant Tunneling Diodes and Applications written by Azzouz Sellai and published by . This book was released on 1991 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Memory Applications Using Resonant Tunneling Diodes by : Ming-Huei Shieh
Download or read book Memory Applications Using Resonant Tunneling Diodes written by Ming-Huei Shieh and published by . This book was released on 1994 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Physics and Technology of Resonant-Tunneling Devices by :
Download or read book Physics and Technology of Resonant-Tunneling Devices written by and published by . This book was released on 1992 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the three-year course of this program, several issues in the device physics of resonant-tunneling diodes (RTDs) have been investigated, including the small-signal admittance, the shot noise, and the transport through multiple-quantum well structures. A large quantum-well inductance has been measured in the negative-differential-resistance region (NDR), but not in the positive-differential-resistance (PDR) region. The microwave shot-noise has been found to be suppressed relative to normal shot-noise in the PDR region, but enhanced in the NDR region. Triple-well RTDs have displayed a much wider NDR region in voltage than conventional single-well RTDs. Several new RTD material systems have been demonstrated including Type-II InAS/AlSb and Type-I GaSb/AlSb, the first of which has yielded excellent properties for high-speed device applications. Studies of highly lattice mismatched InAs/AlSb RTDs on GaAs substrates have proven that the RTD characteristics are insensitive to a high density of dislocations. Finally, these results have been incorporated into the design of RTDs in high-frequency oscillators and high-speed switches. The InGaAs/AlAs RTD has been optimized for application in a quasioptical fundamental-frequency oscillator operating above 200 GHz. The same material system has been used to make a low-power RTD load for heterojunction field- effect and bipolar transistors in high-performance digital integrated circuits.