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Author : Fabian M. Bufler
Publisher :
ISBN 13 : 9783896498984
Total Pages : 79 pages
Book Rating : 4.4/5 (989 download)
Download or read book Full-band Monte Carlo Simulation of Nanoscale Strained Silicon MOSFETs written by Fabian M. Bufler and published by . This book was released on 2003 with total page 79 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Fabian M. Bufler
Publisher : Herbert Utz Verlag
ISBN 13 : 9783896752703
Total Pages : 196 pages
Book Rating : 4.7/5 (527 download)
Download or read book Full-band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe written by Fabian M. Bufler and published by Herbert Utz Verlag. This book was released on 1998 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Karl Hess
Publisher : Springer Science & Business Media
ISBN 13 : 1461540267
Total Pages : 317 pages
Book Rating : 4.4/5 (615 download)
Download or read book Monte Carlo Device Simulation written by Karl Hess and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt: Monte Carlo simulation is now a well established method for studying semiconductor devices and is particularly well suited to highlighting physical mechanisms and exploring material properties. Not surprisingly, the more completely the material properties are built into the simulation, up to and including the use of a full band structure, the more powerful is the method. Indeed, it is now becoming increasingly clear that phenomena such as reliabil ity related hot-electron effects in MOSFETs cannot be understood satisfac torily without using full band Monte Carlo. The IBM simulator DAMOCLES, therefore, represents a landmark of great significance. DAMOCLES sums up the total of Monte Carlo device modeling experience of the past, and reaches with its capabilities and opportunities into the distant future. This book, therefore, begins with a description of the IBM simulator. The second chapter gives an advanced introduction to the physical basis for Monte Carlo simulations and an outlook on why complex effects such as collisional broadening and intracollisional field effects can be important and how they can be included in the simulations. References to more basic intro the book. The third chapter ductory material can be found throughout describes a typical relationship of Monte Carlo simulations to experimental data and indicates a major difficulty, the vast number of deformation poten tials required to simulate transport throughout the entire Brillouin zone. The fourth chapter addresses possible further extensions of the Monte Carlo approach and subtleties of the electron-electron interaction.
Author : Björn Fischer
Publisher :
ISBN 13 : 9783826570186
Total Pages : 140 pages
Book Rating : 4.5/5 (71 download)
Download or read book A Full Band Monte Carlo Charge Transport Model for Nanoscale Silicon Devices Including Strain written by Björn Fischer and published by . This book was released on 2000 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : C. Moglestue
Publisher : Springer Science & Business Media
ISBN 13 : 9401581339
Total Pages : 343 pages
Book Rating : 4.4/5 (15 download)
Download or read book Monte Carlo Simulation of Semiconductor Devices written by C. Moglestue and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 343 pages. Available in PDF, EPUB and Kindle. Book excerpt: Particle simulation of semiconductor devices is a rather new field which has started to catch the interest of the world's scientific community. It represents a time-continuous solution of Boltzmann's transport equation, or its quantum mechanical equivalent, and the field equation, without encountering the usual numerical problems associated with the direct solution. The technique is based on first physical principles by following in detail the transport histories of indi vidual particles and gives a profound insight into the physics of semiconductor devices. The method can be applied to devices of any geometrical complexity and material composition. It yields an accurate description of the device, which is not limited by the assumptions made behind the alternative drift diffusion and hydrodynamic models, which represent approximate solutions to the transport equation. While the development of the particle modelling technique has been hampered in the past by the cost of computer time, today this should not be held against using a method which gives a profound physical insight into individual devices and can be used to predict the properties of devices not yet manufactured. Employed in this way it can save the developer much time and large sums of money, both important considerations for the laboratory which wants to keep abreast of the field of device research. Applying it to al ready existing electronic components may lead to novel ideas for their improvement. The Monte Carlo particle simulation technique is applicable to microelectronic components of any arbitrary shape and complexity.
Author : David Esseni
Publisher : Cambridge University Press
ISBN 13 : 1139494384
Total Pages : 489 pages
Book Rating : 4.1/5 (394 download)
Download or read book Nanoscale MOS Transistors written by David Esseni and published by Cambridge University Press. This book was released on 2011-01-20 with total page 489 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results
Author : Ewan Alexander Towie
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (669 download)
Download or read book Extended Models of Coulomb Scattering for the Monte Carlo Simulation of Nanoscale Silicon MOSFETs written by Ewan Alexander Towie and published by . This book was released on 2009 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Kalyan Biswas
Publisher : John Wiley & Sons
ISBN 13 : 1394188951
Total Pages : 340 pages
Book Rating : 4.3/5 (941 download)
Download or read book Advanced Nanoscale MOSFET Architectures written by Kalyan Biswas and published by John Wiley & Sons. This book was released on 2024-05-29 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt: Comprehensive reference on the fundamental principles and basic physics dictating metal–oxide–semiconductor field-effect transistor (MOSFET) operation Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal–oxide–semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology. The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs. Additional topics covered include: High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon–germanium (SiGe) FinFET and its challenges and future perspectives TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study.
Author : Hideaki Tsuchiya
Publisher : John Wiley & Sons
ISBN 13 : 1118871669
Total Pages : 261 pages
Book Rating : 4.1/5 (188 download)
Download or read book Carrier Transport in Nanoscale MOS Transistors written by Hideaki Tsuchiya and published by John Wiley & Sons. This book was released on 2016-10-24 with total page 261 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive advanced level examination of the transport theory of nanoscale devices Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds
Author : Christopher Heechang Lee
Publisher :
ISBN 13 :
Total Pages : 186 pages
Book Rating : 4.:/5 (312 download)
Download or read book Full Band Ensemble Monte Carlo Simulation of Silicon Devices written by Christopher Heechang Lee and published by . This book was released on 1994 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: A Monte Carlo simulator for silicon devices has been developed. The band structure data for this self-consistent device simulator were computed using the empirical pseudopotential method. The ensemble Monte Carlo technique used in the simulations is described in detail. A homogeneous simulator, based on the same transport physics, is used to calibrate the device simulator as well as to indicate the shortcomings of more traditional simulators such as drift-diffusion based models, hydrodynamic and energy balance based models, and nonparabolic band approximation Monte Carlo models. A conventional metal-oxide-semiconductor field effect transistor (MOSFET) is simulated as a test case to validate the simulator. Finally, a floating gate memory element (non-volatile memory) is also examined. In this simulation, the Monte Carlo simulator is used as a post-processor to PISCES IIB in the interest of execution time. Despite the lack of self-consistency and rigor, the simulator is able to produce results which are in good agreement with experimental data.
Author : Amanda Watson Duncan
Publisher :
ISBN 13 :
Total Pages : 270 pages
Book Rating : 4.:/5 (39 download)
Download or read book Full-band Monte Carlo Simulation of Hot Electrons in Scaled Silicon Devices written by Amanda Watson Duncan and published by . This book was released on 1996 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: A full-band Monte Carlo device simulator has been used to study the effects of device scaling on hot electrons in different types of n-channel MOSFETs and flash memory structures. A MOSFET with a single source/drain implant, an LDD MOSFET, an SOI MOSFET, and a MOSFET built on top of a heavily doped "ground plane" have been simulated. Different scaling techniques have been applied to the devices to see the effects on the electric field, the energy distributions of the electrons, and the drain, substrate, and gate currents. The locations of impact ionization events and injection into the gate oxide are examined. It is shown that simpler models cannot adequately predict hot carrier behavior at the channel lengths studied (below 0.3 $mu$m) and that several strategies that are successful at suppressing the hot carrier population for longer channel lengths are not as useful when 0.1 $mu$m channel lengths are approached. The effect of scaling on the programming of stacked-gate and split-gate flash memory devices was also studied. Predictions of hot carrier behavior in small MOSFETs and flash memory devices are made, and suggestions for device design are given.
Author : Maneesh Madhav Shanbhag
Publisher :
ISBN 13 :
Total Pages : 80 pages
Book Rating : 4.:/5 (523 download)
Download or read book Optimization of Nanoscale MOSFET with Schottky Barrier Contacts Using Monte Carlo Simulation written by Maneesh Madhav Shanbhag and published by . This book was released on 2002 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Xiaofeng Fan
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (182 download)
Download or read book Quantum Corrected Full-band Semiclassical Monte Carlo Simulation Research of Charge Transport in Si, Stressed-Si, and SiGe MOSFETs written by Xiaofeng Fan and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Osama Munir Nayfeh
Publisher :
ISBN 13 :
Total Pages : 78 pages
Book Rating : 4.:/5 (574 download)
Download or read book On the Relationship Between Carrier Mobility and Velocity in Sub-50 Mm MOSFETs Via Calibrated Monte Carlo Simulation written by Osama Munir Nayfeh and published by . This book was released on 2004 with total page 78 pages. Available in PDF, EPUB and Kindle. Book excerpt: Subsequent to accurate 2D inverse modeling in the regime sensitive to electrostatics of industrial sub-50 nm NMOSFETs, a 2D full-band Monte Carlo device simulator was calibrated in the regime sensitive to transport parameters. The relationship between electron mobility and high-electric-field velocity at the source-channel potential energy barrier was investigated. The results show a strong correlation, as was demonstrated previously experimentally. Moreover, further proof is provided that the velocity at which carriers are injected from the source region in modem NMOSFET's is only about half of the limiting thermal velocity.
Author : Brian Winstead
Publisher :
ISBN 13 :
Total Pages : 202 pages
Book Rating : 4.:/5 (52 download)
Download or read book Monte Carlo Simulation of Silicon Devices Including Quantum Correction and Strain written by Brian Winstead and published by . This book was released on 2001 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Thanh Viet Dinh
Publisher :
ISBN 13 :
Total Pages : 116 pages
Book Rating : 4.:/5 (76 download)
Download or read book Full-Band Monte Carlo Simulations for Vertical Impact Ionization MOSFETs written by Thanh Viet Dinh and published by . This book was released on 2010 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Chinmay K. Maiti
Publisher : CRC Press
ISBN 13 : 1000404935
Total Pages : 275 pages
Book Rating : 4.0/5 (4 download)
Download or read book Stress and Strain Engineering at Nanoscale in Semiconductor Devices written by Chinmay K. Maiti and published by CRC Press. This book was released on 2021-06-29 with total page 275 pages. Available in PDF, EPUB and Kindle. Book excerpt: Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.
