Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Download Formation Of Gallium Nitride Templates And Freestanding Substrates By Hydride Vapor Phase Epitaxy For Homoepitaxial Growth Of Iii Nitride Devices full books in PDF, epub, and Kindle. Read online Formation Of Gallium Nitride Templates And Freestanding Substrates By Hydride Vapor Phase Epitaxy For Homoepitaxial Growth Of Iii Nitride Devices ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Author :
Publisher :
ISBN 13 :
Total Pages : 924 pages
Book Rating : 4.F/5 ( download)
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2007 with total page 924 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher : Newnes
ISBN 13 : 0080932282
Total Pages : 3572 pages
Book Rating : 4.0/5 (89 download)
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Author :
Publisher :
ISBN 13 :
Total Pages : 2002 pages
Book Rating : 4.3/5 (91 download)
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Stuart Irvine
Publisher : John Wiley & Sons
ISBN 13 : 1119313015
Total Pages : 582 pages
Book Rating : 4.1/5 (193 download)
Download or read book Metalorganic Vapor Phase Epitaxy (MOVPE) written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-10-07 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Author : Dirk Ehrentraut
Publisher : Springer Science & Business Media
ISBN 13 : 3642048307
Total Pages : 337 pages
Book Rating : 4.6/5 (42 download)
Download or read book Technology of Gallium Nitride Crystal Growth written by Dirk Ehrentraut and published by Springer Science & Business Media. This book was released on 2010-06-14 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Author : M Razeghi
Publisher : Elsevier
ISBN 13 : 9780080444260
Total Pages : 602 pages
Book Rating : 4.4/5 (442 download)
Download or read book Optoelectronic Devices written by M Razeghi and published by Elsevier. This book was released on 2004 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Author : Matteo Meneghini
Publisher : Springer
ISBN 13 : 3319431994
Total Pages : 383 pages
Book Rating : 4.3/5 (194 download)
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Author : Fernando A. Ponce
Publisher :
ISBN 13 :
Total Pages : 1290 pages
Book Rating : 4.3/5 (91 download)
Download or read book III-V Nitrides written by Fernando A. Ponce and published by . This book was released on 1997 with total page 1290 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Govindhan Dhanaraj
Publisher : Springer Science & Business Media
ISBN 13 : 3540747613
Total Pages : 1823 pages
Book Rating : 4.5/5 (47 download)
Download or read book Springer Handbook of Crystal Growth written by Govindhan Dhanaraj and published by Springer Science & Business Media. This book was released on 2010-10-20 with total page 1823 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.
Author : Claudio Ronald Miskys
Publisher :
ISBN 13 : 9783932749841
Total Pages : 207 pages
Book Rating : 4.7/5 (498 download)
Download or read book New Substrates for Epitaxy of Group III Nitride Semiconductors written by Claudio Ronald Miskys and published by . This book was released on 2007 with total page 207 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Debdeep Jena
Publisher : Springer Science & Business Media
ISBN 13 : 0387368310
Total Pages : 523 pages
Book Rating : 4.3/5 (873 download)
Download or read book Polarization Effects in Semiconductors written by Debdeep Jena and published by Springer Science & Business Media. This book was released on 2008 with total page 523 pages. Available in PDF, EPUB and Kindle. Book excerpt: Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices. The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.
Author : Reza Ghodssi
Publisher : Springer Science & Business Media
ISBN 13 : 0387473181
Total Pages : 1211 pages
Book Rating : 4.3/5 (874 download)
Download or read book MEMS Materials and Processes Handbook written by Reza Ghodssi and published by Springer Science & Business Media. This book was released on 2011-03-18 with total page 1211 pages. Available in PDF, EPUB and Kindle. Book excerpt: MEMs Materials and Processes Handbook" is a comprehensive reference for researchers searching for new materials, properties of known materials, or specific processes available for MEMS fabrication. The content is separated into distinct sections on "Materials" and "Processes". The extensive Material Selection Guide" and a "Material Database" guides the reader through the selection of appropriate materials for the required task at hand. The "Processes" section of the book is organized as a catalog of various microfabrication processes, each with a brief introduction to the technology, as well as examples of common uses in MEMs.
Author : Tae-Yeon Seong
Publisher : Springer Science & Business Media
ISBN 13 : 9400758634
Total Pages : 434 pages
Book Rating : 4.4/5 (7 download)
Download or read book III-Nitride Based Light Emitting Diodes and Applications written by Tae-Yeon Seong and published by Springer Science & Business Media. This book was released on 2014-07-08 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: Light emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive applications. However, its ultimate goal is to replace traditional illumination through LED lamps since LED lighting significantly reduces energy consumption and cuts down on carbon-dioxide emission. Despite dramatic advances in LED technologies (e.g., growth, doping and processing technologies), however, there remain critical issues for further improvements yet to be achieved for the realization of solid-state lighting. This book aims to provide the readers with some contemporary LED issues, which have not been comprehensively discussed in the published books and, on which the performance of LEDs is seriously dependent. For example, most importantly, there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and and In-rich GaN-based semiconductors. The materials quality is directly dependent on the substrates used, such as sapphire, Si, etc. In addition, efficiency droop, growth on different orientations and polarization are also important. Chip processing and packaging technologies are key issues. This book presents a comprehensive review of contemporary LED issues. Given the interest and importance of future research in nitride semiconducting materials and solid state lighting applications, the contents are very timely. The book is composed of chapters written by leading researchers in III-nitride semiconducting materials and device technology. This book will be of interest to scientists and engineers working on LEDs for lighting applications. Postgraduate researchers working on LEDs will also benefit from the issues this book provides.
Author : Michael Kneissl
Publisher : Springer
ISBN 13 : 3319241001
Total Pages : 454 pages
Book Rating : 4.3/5 (192 download)
Download or read book III-Nitride Ultraviolet Emitters written by Michael Kneissl and published by Springer. This book was released on 2015-11-12 with total page 454 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive overview of the state-of-the-art in group III-nitride based ultraviolet LED and laser technologies, covering different substrate approaches, a review of optical, electronic and structural properties of InAlGaN materials as well as various optoelectronic components. In addition, the book gives an overview of a number of key application areas for UV emitters and detectors, including water purification, phototherapy, sensing, and UV curing. The book is written for researchers and graduate level students in the area of semiconductor materials, optoelectronics and devices as well as developers and engineers in the various application fields of UV emitters and detectors.
Author : Alexander A. Demkov
Publisher : Springer Science & Business Media
ISBN 13 : 146149320X
Total Pages : 284 pages
Book Rating : 4.4/5 (614 download)
Download or read book Integration of Functional Oxides with Semiconductors written by Alexander A. Demkov and published by Springer Science & Business Media. This book was released on 2014-02-20 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the basic physical principles of the oxide/semiconductor epitaxy and offers a view of the current state of the field. It shows how this technology enables large-scale integration of oxide electronic and photonic devices and describes possible hybrid semiconductor/oxide systems. The book incorporates both theoretical and experimental advances to explore the heteroepitaxy of tuned functional oxides and semiconductors to identify material, device and characterization challenges and to present the incredible potential in the realization of multifunctional devices and monolithic integration of materials and devices. Intended for a multidisciplined audience, Integration of Functional Oxides with Semiconductors describes processing techniques that enable atomic-level control of stoichiometry and structure and reviews characterization techniques for films, interfaces and device performance parameters. Fundamental challenges involved in joining covalent and ionic systems, chemical interactions at interfaces, multi-element materials that are sensitive to atomic-level compositional and structural changes are discussed in the context of the latest literature. Magnetic, ferroelectric and piezoelectric materials and the coupling between them will also be discussed. GaN, SiC, Si, GaAs and Ge semiconductors are covered within the context of optimizing next-generation device performance for monolithic device processing.
Author : Stephen Pearton
Publisher : Springer Science & Business Media
ISBN 13 : 3642235212
Total Pages : 497 pages
Book Rating : 4.6/5 (422 download)
Download or read book GaN and ZnO-based Materials and Devices written by Stephen Pearton and published by Springer Science & Business Media. This book was released on 2012-01-14 with total page 497 pages. Available in PDF, EPUB and Kindle. Book excerpt: The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.
Author : Narayanasamy Sabari Arul
Publisher : Springer Nature
ISBN 13 : 9811512671
Total Pages : 324 pages
Book Rating : 4.8/5 (115 download)
Download or read book Revolution of Perovskite written by Narayanasamy Sabari Arul and published by Springer Nature. This book was released on 2020-01-03 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume presents advanced synthesis techniques for fabricating Perovskite materials with enhanced properties for applications such as energy storage devices, photovoltaics, electrocatalysis, electronic devices, photocatalysts, sensing, and biomedical instruments. The book attempts to fill a gap in the published literature and provide a detailed reference on Perovskite materials. This book will be of use to graduate students and academic and industrial researchers in the fields of solid-state chemistry, physics, materials science, and chemical engineering.
