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Ferroelectric Field Effect Transistors
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Book Synopsis Ferroelectric-Gate Field Effect Transistor Memories by : Byung-Eun Park
Download or read book Ferroelectric-Gate Field Effect Transistor Memories written by Byung-Eun Park and published by Springer Nature. This book was released on 2020-03-23 with total page 421 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.
Book Synopsis Ferroelectricity in Doped Hafnium Oxide by : Uwe Schroeder
Download or read book Ferroelectricity in Doped Hafnium Oxide written by Uwe Schroeder and published by Woodhead Publishing. This book was released on 2019-03-27 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. - Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices - Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more - Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face
Book Synopsis Ferroelectric Random Access Memories by : Hiroshi Ishiwara
Download or read book Ferroelectric Random Access Memories written by Hiroshi Ishiwara and published by Springer Science & Business Media. This book was released on 2004-04-16 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well.
Book Synopsis Nanoscale Transistors by : Mark Lundstrom
Download or read book Nanoscale Transistors written by Mark Lundstrom and published by Springer Science & Business Media. This book was released on 2006-06-18 with total page 223 pages. Available in PDF, EPUB and Kindle. Book excerpt: To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules
Book Synopsis Resistive Switching by : Daniele Ielmini
Download or read book Resistive Switching written by Daniele Ielmini and published by . This book was released on 2016 with total page 755 pages. Available in PDF, EPUB and Kindle. Book excerpt: With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.
Book Synopsis Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films by : Ekaterina Yurchuk
Download or read book Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films written by Ekaterina Yurchuk and published by Logos Verlag Berlin GmbH. This book was released on 2015-06-30 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO2 thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO2-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.
Book Synopsis Compact Modeling by : Gennady Gildenblat
Download or read book Compact Modeling written by Gennady Gildenblat and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Download or read book Ferroelectrics written by Mickaël Lallart and published by BoD – Books on Demand. This book was released on 2011-08-23 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ferroelectric materials have been and still are widely used in many applications, that have moved from sonar towards breakthrough technologies such as memories or optical devices. This book is a part of a four volume collection (covering material aspects, physical effects, characterization and modeling, and applications) and focuses on the application of ferroelectric devices to innovative systems. In particular, the use of these materials as varying capacitors, gyroscope, acoustics sensors and actuators, microgenerators and memory devices will be exposed, providing an up-to-date review of recent scientific findings and recent advances in the field of ferroelectric devices.
Book Synopsis Tunnel Field-effect Transistors (TFET) by : Jagadesh Kumar Mamidala
Download or read book Tunnel Field-effect Transistors (TFET) written by Jagadesh Kumar Mamidala and published by John Wiley & Sons. This book was released on 2016-09-27 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research into Tunneling Field Effect Transistors (TFETs) has developed significantly in recent times, indicating their significance in low power integrated circuits. This book describes the qualitative and quantitative fundamental concepts of TFET functioning, the essential components of the problem of modelling the TFET, and outlines the most commonly used mathematical approaches for the same in a lucid language. Divided into eight chapters, the topics covered include: Quantum Mechanics, Basics of Tunneling, The Tunnel FET, Drain current modelling of Tunnel FET: The task and its challenges, Modeling the Surface Potential in TFETs, Modelling the Drain Current, and Device simulation using Technology Computer Aided Design (TCAD). The information is well organized, describing different phenomena in the TFETs using simple and logical explanations. Key features: * Enables readers to understand the basic concepts of TFET functioning and modelling in order to read, understand, and critically analyse current research on the topic with ease. * Includes state-of-the-art work on TFETs, attempting to cover all the recent research articles published on the subject. * Discusses the basic physics behind tunneling, as well as the device physics of the TFETs. * Provides detailed discussion on device simulations along with device physics so as to enable researchers to carry forward their study on TFETs. Primarily targeted at new and practicing researchers and post graduate students, the book would particularly be useful for researchers who are working in the area of compact and analytical modelling of semiconductor devices.
Book Synopsis Ferroelectric Materials for Energy Applications by : Haitao Huang
Download or read book Ferroelectric Materials for Energy Applications written by Haitao Huang and published by John Wiley & Sons. This book was released on 2019-01-04 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt: Provides a comprehensive overview of the emerging applications of ferroelectric materials in energy harvesting and storage Conventional ferroelectric materials are normally used in sensors and actuators, memory devices, and field effect transistors, etc. Recent progress in this area showed that ferroelectric materials can harvest energy from multiple sources including mechanical energy, thermal fluctuations, and light. This book gives a complete summary of the novel energy-related applications of ferroelectric materials?and reviews both the recent advances as well as the future perspectives in this field. Beginning with the fundamentals of ferroelectric materials, Ferroelectric Materials for Energy Applications offers in-depth chapter coverage of: piezoelectric energy generation; ferroelectric photovoltaics; organic-inorganic hybrid perovskites for solar energy conversion; ferroelectric ceramics and thin films in electric energy storage; ferroelectric polymer composites in electric energy storage; pyroelectric energy harvesting; ferroelectrics in electrocaloric cooling; ferroelectric in photocatalysis; and first-principles calculations on ferroelectrics for energy applications. -Covers a highly application-oriented subject with great potential for energy conversion and storage applications. -Focused toward a large, interdisciplinary group consisting of material scientists, solid state physicists, engineering scientists, and industrial researchers -Edited by the "father of integrated ferroelectrics" Ferroelectric Materials for Energy Applications is an excellent book for researchers working on ferroelectric materials and energy materials, as well as engineers looking to broaden their view of the field.
Book Synopsis Ferroelectric Polymers by : Hari Singh Nalwa
Download or read book Ferroelectric Polymers written by Hari Singh Nalwa and published by CRC Press. This book was released on 1995-06-20 with total page 904 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work covers the chemistry and physics of polymeric materials and their uses in the fields of electronics, photonics, and biomedical engineering. It discusses the relationship between polymeric supermolecular structures and ferroelectric, piezoelectric and pyroelectric properties.
Book Synopsis Ferroelectric Thin Films by : Masanori Okuyama
Download or read book Ferroelectric Thin Films written by Masanori Okuyama and published by Springer Science & Business Media. This book was released on 2005-02-22 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.
Book Synopsis Ferroelectric Thin Films by : Carlos Paz de Araujo
Download or read book Ferroelectric Thin Films written by Carlos Paz de Araujo and published by Taylor & Francis. This book was released on 1996 with total page 596 pages. Available in PDF, EPUB and Kindle. Book excerpt: The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis of thin film ferroelectric materials and their basic properties. Because it is a basic introduction to the chemistry, materials science, processing, and physics of the materials from which integrated ferroelectrics are made, newcomers to this field as well as veterans will find this book self-contained and invaluable in acquiring the diverse elements requisite to success in their work in this area. It is directed at electronic engineers and physicists as well as process and system engineers, ceramicists, and chemists involved in the research, design, development, manufacturing, and utilization of thin film ferroelectric materials.
Book Synopsis A Journey of Embedded and Cyber-Physical Systems by : Jian-Jia Chen
Download or read book A Journey of Embedded and Cyber-Physical Systems written by Jian-Jia Chen and published by Springer Nature. This book was released on 2020-07-30 with total page 181 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Open Access book celebrates Professor Peter Marwedel's outstanding achievements in compilers, embedded systems, and cyber-physical systems. The contributions in the book summarize the content of invited lectures given at the workshop “Embedded Systems” held at the Technical University Dortmund in early July 2019 in honor of Professor Marwedel's seventieth birthday. Provides a comprehensive view from leading researchers with respect to the past, present, and future of the design of embedded and cyber-physical systems; Discusses challenges and (potential) solutions from theoreticians and practitioners on modeling, design, analysis, and optimization for embedded and cyber-physical systems; Includes coverage of model verification, communication, software runtime systems, operating systems and real-time computing.
Book Synopsis Crystalline Hafnia and Zirconia based Dielectrics for Memory Applications by : Tim S. Böscke
Download or read book Crystalline Hafnia and Zirconia based Dielectrics for Memory Applications written by Tim S. Böscke and published by Cuvillier Verlag. This book was released on 2010-05-31 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work investigates the crystallography and dielectric properties of Zirconium- and Hafnium-oxide based nano-scale thin film insulators for memory. Hafnium- and Zirconium-oxide are industry leading candidates for high-k dielectrics. Most application research has focused on the application of amorphous high-k due to formation of defects associated with the crystalline phase. However the application of crystalline dielectrics offers two advantages: Potentially high thermal stability, since no measures have to be taken to avoid crystallization, and the ability to manipulate crystalline phase composition to maximize dielectric constants. Pure ZrO2 crystallized at a lower temperature than HfO2 and always formed a metastable t’ higher-k phase. ZrO2 crystallized already during deposition, leading to leakage current degradation. It was shown that this problem could be solved by SiO2 addition to raise the crystallization temperature, allowing fabrication of low leakage, low effective oxide thickness (EOT) metal-insulator-metal (MIM) capacitors suitable for stack based DRAM down to the 4X nm node. HfO2, in contrast, formed a mixture of monoclinic and tetragonal phase which led to the formation of mechanical defects (microcracks). Addition of SiO2 allowed manipulating the phase composition of HfO2. When up to 7 mol% SiO2 was added, increased stabilization of the metastable t' phase with a dielectric constant of 34-36 was observed. It could be shown that the stabilization is due to a combination of a surface energy effect and solved SiO2 in the HfO2 lattice. Above 11 mol% SiO2 segregated from HfO2 and a tetragonal phase with higher c/a splitting and lower dielectric constant was stabilized instead. It was discovered that the behavior of HfSiO was fundamentally altered if it was crystallized under mechanical confinement in presence of a top electrode. Besides a significant increase in dielectric constant, the material exhibited ferroelectric and antiferroelectric polarization hysteresis, a characteristic not previously reported for HfO2 or ZrO2. This behavior originated from the formation of a new orthorhombic crystal phase. Utilizing the increased permittivity of the antiferroelectic phase, it was possible to demonstrate low EOT, highly temperature stable, MIM capacitors with potential application in sub 50 nm deep trench-DRAM generations. Novel ferroelectric HfSiO was used to fabricate ferroelectric field effect transistors which allowed long term nonvolatile data storage. The electrical characteristics of the devices meet or exceed that of the best published literature results. Full compatibility to silicon semiconductor technology with a gate stack thickness down to 5 nm was demonstrated for the first time, suggesting that HfSiO based FEFETs can potentially be scaled to below the 30 nm node. This goal could not be achieved with previously known materials.
Book Synopsis Multifunctional Oxide Heterostructures by : Evgeny Y. Tsymbal
Download or read book Multifunctional Oxide Heterostructures written by Evgeny Y. Tsymbal and published by OUP Oxford. This book was released on 2012-08-30 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is devoted to the rapidly developing field of oxide thin-films and heterostructures. Oxide materials combined with atomic-scale precision in a heterostructure exhibit an abundance of macroscopic physical properties involving the strong coupling between the electronic, spin, and structural degrees of freedom, and the interplay between magnetism, ferroelectricity, and conductivity. Recent advances in thin-film deposition and characterization techniques made possible the experimental realization of such oxide heterostructures, promising novel functionalities and device concepts. The book consists of chapters on some of the key innovations in the field over recent years, including strongly correlated oxide heterostructures, magnetoelectric coupling and multiferroic materials, thermoelectric phenomena, and two-dimensional electron gases at oxide interfaces. The book covers the core principles, describes experimental approaches to fabricate and characterize oxide heterostructures, demonstrates new functional properties of these materials, and provides an overview of novel applications.
Book Synopsis Nano-CMOS and Post-CMOS Electronics by : Saraju P. Mohanty
Download or read book Nano-CMOS and Post-CMOS Electronics written by Saraju P. Mohanty and published by IET. This book was released on 2016-04-12 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over two volumes this work describes the modelling, design, and implementation of nano-scaled CMOS electronics, and the new generation of post-CMOS devices, at both the device and circuit levels.
