GaAs Devices and Circuits

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Publisher : Springer Science & Business Media
ISBN 13 : 1489919899
Total Pages : 677 pages
Book Rating : 4.4/5 (899 download)

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Book Synopsis GaAs Devices and Circuits by : Michael S. Shur

Download or read book GaAs Devices and Circuits written by Michael S. Shur and published by Springer Science & Business Media. This book was released on 2013-11-21 with total page 677 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.

Mechanisms of Impurity Redistribution in Gallium Arsenide Substrates and Molecular Beam Epitaxially Grown Layers

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ISBN 13 :
Total Pages : 570 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Mechanisms of Impurity Redistribution in Gallium Arsenide Substrates and Molecular Beam Epitaxially Grown Layers by : Susan C. Palmateer

Download or read book Mechanisms of Impurity Redistribution in Gallium Arsenide Substrates and Molecular Beam Epitaxially Grown Layers written by Susan C. Palmateer and published by . This book was released on 1985 with total page 570 pages. Available in PDF, EPUB and Kindle. Book excerpt:

The Effects of Hot-electron Injection Cathodes on the Performance of Gallium Arsenide Vertical Field-effect Transistors

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ISBN 13 :
Total Pages : 408 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis The Effects of Hot-electron Injection Cathodes on the Performance of Gallium Arsenide Vertical Field-effect Transistors by : Joel Robert Wendt

Download or read book The Effects of Hot-electron Injection Cathodes on the Performance of Gallium Arsenide Vertical Field-effect Transistors written by Joel Robert Wendt and published by . This book was released on 1988 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Molecular Beam Epitaxy and Heterostructures

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Publisher : Springer Science & Business Media
ISBN 13 : 940095073X
Total Pages : 718 pages
Book Rating : 4.4/5 (9 download)

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Book Synopsis Molecular Beam Epitaxy and Heterostructures by : L.L. Chang

Download or read book Molecular Beam Epitaxy and Heterostructures written by L.L. Chang and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt: The NATO Advanced Study Institute on "Molecular Beam Epitaxy (MBE) and Heterostructures" was held at the Ettore Majorana Center for Scientific Culture, Erice, Italy, on March 7-19, 1983, the second course of the International School of Solid-State Device Re search. This volume contains the lectures presented at the Institute. Throughout the history of semiconductor development, the coupling between processing techniques and device structures for both scientific investigations and technological applications has time and again been demonstrated. Newly conceived ideas usually demand the ultimate in existing techniques, which often leads to process innova tions. The emergence of a process, on the other hand, invariably creates opportunities for device improvement and invention. This intimate relationship between the two has most recently been witnessed in MBE and heterostructures, the subject of this Institute. This volume is divided into several sections. Chapter 1 serves as an introduction by providing a perspective of the subject. This is followed by two sections, each containing four chapters, Chapters 2-5 addressing the principles of the MBE process and Chapters 6-9 describ ing its use in the growth of a variety of semiconductors and heteros tructures. The next two sections, Chapters to-II and Chapters 12-15, treat the theory and the electronic properties of the heterostructures, respectively. The focus is on energy quantization of the two dimensional electron system. Chapters 16-17 are devoted to device structures, including both field-effect transistors and lasers and detec tors.

International Aerospace Abstracts

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Publisher :
ISBN 13 :
Total Pages : 818 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis International Aerospace Abstracts by :

Download or read book International Aerospace Abstracts written by and published by . This book was released on 1990 with total page 818 pages. Available in PDF, EPUB and Kindle. Book excerpt:

The Physics and Fabrication of Microstructures and Microdevices

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Publisher : Springer Science & Business Media
ISBN 13 : 3642714463
Total Pages : 481 pages
Book Rating : 4.6/5 (427 download)

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Book Synopsis The Physics and Fabrication of Microstructures and Microdevices by : Michael J. Kelly

Download or read book The Physics and Fabrication of Microstructures and Microdevices written by Michael J. Kelly and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 481 pages. Available in PDF, EPUB and Kindle. Book excerpt: les Houches This Winter School on "The Physics and Fabrication of Microstructures" originated with a European industrial decision to investigate in some detail the potential of custom-designed microstructures for new devices. Beginning in 1985, GEC and THOMSON started a collaboration on these subjects, supported by an ESPRIT grant from the Commission of the European Com munity. To the outside observer of the whole field, it appears clear that the world effort is very largely based in the United States and Japan. It also appears that cooperation and dissemination of results are very well organised outside Europe and act as a major influence on the development of new concepts and devices. In Japan, a main research programme of the Research and Development for Basic Technology for Future Industries is focused on "Future Electron Devices". In Japan and in the United States, many workshops are organised annually in order to bring together the major specialists in industry and academia, allowing fast dissemination of advances and contacts for setting up cooperative efforts.

Proceedings of the Eighth International Conference on Chemical Vapor Deposition

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ISBN 13 :
Total Pages : 844 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Proceedings of the Eighth International Conference on Chemical Vapor Deposition by : J. M. Blocher

Download or read book Proceedings of the Eighth International Conference on Chemical Vapor Deposition written by J. M. Blocher and published by . This book was released on 1981 with total page 844 pages. Available in PDF, EPUB and Kindle. Book excerpt:

IEEE TENCON 2003

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Publisher : Allied Publishers
ISBN 13 : 9780780381629
Total Pages : 434 pages
Book Rating : 4.3/5 (816 download)

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Book Synopsis IEEE TENCON 2003 by :

Download or read book IEEE TENCON 2003 written by and published by Allied Publishers. This book was released on 2003 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Fabrication of GaAs Devices

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Publisher : IET
ISBN 13 : 9780863413537
Total Pages : 372 pages
Book Rating : 4.4/5 (135 download)

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Book Synopsis Fabrication of GaAs Devices by : Albert G. Baca

Download or read book Fabrication of GaAs Devices written by Albert G. Baca and published by IET. This book was released on 2005-09 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.

Microcircuit Reliability Bibliography

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Publisher :
ISBN 13 :
Total Pages : 412 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Microcircuit Reliability Bibliography by :

Download or read book Microcircuit Reliability Bibliography written by and published by . This book was released on 1978 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Scientific and Technical Aerospace Reports

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ISBN 13 :
Total Pages : 836 pages
Book Rating : 4.:/5 (31 download)

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Book Synopsis Scientific and Technical Aerospace Reports by :

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Metal – Semiconductor Contacts and Devices

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Publisher : Academic Press
ISBN 13 : 1483217795
Total Pages : 435 pages
Book Rating : 4.4/5 (832 download)

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Book Synopsis Metal – Semiconductor Contacts and Devices by : Simon S. Cohen

Download or read book Metal – Semiconductor Contacts and Devices written by Simon S. Cohen and published by Academic Press. This book was released on 2014-12-01 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices. This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularly, ohmic contacts. Contacts that involve polycrystalline silicon; applications of the metal-semiconductor barriers in MOS, bipolar, and MESFET digital integrated circuits; and methods for measuring the barrier height are covered as well. Process engineers, device physicists, circuit designers, and students of this discipline will find the book very useful.

The Physics of Submicron Semiconductor Devices

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Publisher : Springer Science & Business Media
ISBN 13 : 1489923829
Total Pages : 729 pages
Book Rating : 4.4/5 (899 download)

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Book Synopsis The Physics of Submicron Semiconductor Devices by : Harold L. Grubin

Download or read book The Physics of Submicron Semiconductor Devices written by Harold L. Grubin and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 729 pages. Available in PDF, EPUB and Kindle. Book excerpt: The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr.

Fabrication and Characterization of Sub-micron GaAs Vertical Field Effect Transistors

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ISBN 13 :
Total Pages : 446 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Fabrication and Characterization of Sub-micron GaAs Vertical Field Effect Transistors by : Umesh Kumar Mishra

Download or read book Fabrication and Characterization of Sub-micron GaAs Vertical Field Effect Transistors written by Umesh Kumar Mishra and published by . This book was released on 1984 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Research in Progress

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ISBN 13 :
Total Pages : 644 pages
Book Rating : 4.:/5 (39 download)

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Download or read book Research in Progress written by and published by . This book was released on 1983 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Research in Progress

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ISBN 13 :
Total Pages : 316 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Research in Progress by : United States. Army Research Office

Download or read book Research in Progress written by United States. Army Research Office and published by . This book was released on 1983 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt: Vols. for 1977- consist of two parts: Chemistry, biological sciences, engineering sciences, metallurgy and materials science (issued in the spring); and Physics, electronics, mathematics, geosciences (issued in the fall).

RF and Microwave Semiconductor Device Handbook

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Publisher : CRC Press
ISBN 13 : 1420039970
Total Pages : 336 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis RF and Microwave Semiconductor Device Handbook by : Mike Golio

Download or read book RF and Microwave Semiconductor Device Handbook written by Mike Golio and published by CRC Press. This book was released on 2017-12-19 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering a single volume reference for high frequency semiconductor devices, this handbook covers basic material characteristics, system level concerns and constraints, simulation and modeling of devices, and packaging. Individual chapters detail the properties and characteristics of each semiconductor device type, including: Varactors, Schottky diodes, transit-time devices, BJTs, HBTs, MOSFETs, MESFETs, and HEMTs. Written by leading researchers in the field, the RF and Microwave Semiconductor Device Handbook provides an excellent starting point for programs involving development, technology comparison, or acquisition of RF and wireless semiconductor devices.