Fabrication And Characterisation Of Heterojunction Bipolar Transistors For High Current Drive Capability

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Fabrication of SiGe HBT BiCMOS Technology

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Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1420066897
Total Pages : 258 pages
Book Rating : 4.4/5 (2 download)

Book Synopsis Fabrication of SiGe HBT BiCMOS Technology by : John D. Cressler

Download or read book Fabrication of SiGe HBT BiCMOS Technology written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBT BiCMOS technology is the obvious groundbreaker of the Si heterostructures application space. To date virtually every major player in the communications electronics market either has SiGe up and running in-house or is using someone else’s SiGe fab as foundry for their designers. Key to this success lies in successful integration of the SiGe HBT and Si CMOS, with no loss of performance from either device. Filled with contributions from leading experts, Fabrication of SiGe HBT BiCMOS Technologies brings together a complete discussion of these topics into a single resource. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume examines the design, fabrication, and application of silicon heterostructure transistors. A novel aspect of this book the inclusion of numerous snapshot views of the industrial state-of-the-art for SiGe HBT BiCMOS technology. It has been carefully designed to provide a useful basis of comparison for the current status and future course of the global industry. In addition to the copious technical material and the numerous references contained in each chapter, the book includes easy-to-reference appendices on the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

Current Trends in Heterojunction Bipolar Transistors

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Author : M. F. Chang
Publisher : World Scientific
ISBN 13 : 9789810220976
Total Pages : 448 pages
Book Rating : 4.2/5 (29 download)

Book Synopsis Current Trends in Heterojunction Bipolar Transistors by : M. F. Chang

Download or read book Current Trends in Heterojunction Bipolar Transistors written by M. F. Chang and published by World Scientific. This book was released on 1996 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.

Modeling and Characterization of Abrupt Heterojunction Bipolar Transistors

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Author : Kyounghoon Yang
Publisher :
ISBN 13 :
Total Pages : 396 pages
Book Rating : 4.3/5 (91 download)

Book Synopsis Modeling and Characterization of Abrupt Heterojunction Bipolar Transistors by : Kyounghoon Yang

Download or read book Modeling and Characterization of Abrupt Heterojunction Bipolar Transistors written by Kyounghoon Yang and published by . This book was released on 1994 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Characterization of Very High Speed Semiconductor Devices and Integrated Circuits

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Author : Ravi Jain
Publisher :
ISBN 13 :
Total Pages : 378 pages
Book Rating : 4.3/5 (91 download)

Book Synopsis Characterization of Very High Speed Semiconductor Devices and Integrated Circuits by : Ravi Jain

Download or read book Characterization of Very High Speed Semiconductor Devices and Integrated Circuits written by Ravi Jain and published by . This book was released on 1987 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Proceedings of the ... European Symposium on Reliability of Electron Devices, Failure Physics and Analyses

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Author :
Publisher :
ISBN 13 :
Total Pages : 368 pages
Book Rating : 4.3/5 (91 download)

Book Synopsis Proceedings of the ... European Symposium on Reliability of Electron Devices, Failure Physics and Analyses by :

Download or read book Proceedings of the ... European Symposium on Reliability of Electron Devices, Failure Physics and Analyses written by and published by . This book was released on 1996 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt:

SiGe Heterojunction Bipolar Transistors

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Author : Peter Ashburn
Publisher : John Wiley & Sons
ISBN 13 : 0470090731
Total Pages : 286 pages
Book Rating : 4.4/5 (7 download)

Book Synopsis SiGe Heterojunction Bipolar Transistors by : Peter Ashburn

Download or read book SiGe Heterojunction Bipolar Transistors written by Peter Ashburn and published by John Wiley & Sons. This book was released on 2004-02-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.

Analysis and Design of Analog Integrated Circuits

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Author : Paul R. Gray
Publisher : John Wiley & Sons
ISBN 13 : 1394220065
Total Pages : 981 pages
Book Rating : 4.3/5 (942 download)

Book Synopsis Analysis and Design of Analog Integrated Circuits by : Paul R. Gray

Download or read book Analysis and Design of Analog Integrated Circuits written by Paul R. Gray and published by John Wiley & Sons. This book was released on 2024-02-21 with total page 981 pages. Available in PDF, EPUB and Kindle. Book excerpt: ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS Authoritative and comprehensive textbook on the fundamentals of analog integrated circuits, with learning aids included throughout Written in an accessible style to ensure complex content can be appreciated by both students and professionals, this Sixth Edition of Analysis and Design of Analog Integrated Circuits is a highly comprehensive textbook on analog design, offering in-depth coverage of the fundamentals of circuits in a single volume. To aid in reader comprehension and retention, supplementary material includes end of chapter problems, plus a Solution Manual for instructors. In addition to the well-established concepts, this Sixth Edition introduces a new super-source follower circuit and its large-signal behavior, frequency response, stability, and noise properties. New material also introduces replica biasing, describes and analyzes two op amps with replica biasing, and provides coverage of weighted zero-value time constants as a method to estimate the location of dominant zeros, pole-zero doublets (including their effect on settling time and three examples of circuits that create doublets), the effect of feedback on pole-zero doublets, and MOS transistor noise performance (including a thorough treatment on thermally induced gate noise). Providing complete coverage of the subject, Analysis and Design of Analog Integrated Circuits serves as a valuable reference for readers from many different types of backgrounds, including senior undergraduates and first-year graduate students in electrical and computer engineering, along with analog integrated-circuit designers.

Proceedings of the ... International Symposium on the Physical & Failure Analysis of Integrated Circuits

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Author :
Publisher :
ISBN 13 :
Total Pages : 356 pages
Book Rating : 4.:/5 (31 download)

Book Synopsis Proceedings of the ... International Symposium on the Physical & Failure Analysis of Integrated Circuits by :

Download or read book Proceedings of the ... International Symposium on the Physical & Failure Analysis of Integrated Circuits written by and published by . This book was released on 1997 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Electrical & Electronics Abstracts

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Author :
Publisher :
ISBN 13 :
Total Pages : 2240 pages
Book Rating : 4.3/5 (243 download)

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Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 2240 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Fabrication and Characterization of Aluminum Gallium Arsenide/gallium Arsenide Heterojunction Bipolar Transistors

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Author : Amish J. Shah
Publisher :
ISBN 13 :
Total Pages : 144 pages
Book Rating : 4.E/5 ( download)

Book Synopsis Fabrication and Characterization of Aluminum Gallium Arsenide/gallium Arsenide Heterojunction Bipolar Transistors by : Amish J. Shah

Download or read book Fabrication and Characterization of Aluminum Gallium Arsenide/gallium Arsenide Heterojunction Bipolar Transistors written by Amish J. Shah and published by . This book was released on 1991 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Proceedings

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Author :
Publisher :
ISBN 13 :
Total Pages : 80 pages
Book Rating : 4.X/5 (4 download)

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Download or read book Proceedings written by and published by . This book was released on 1995 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Semiconductor Devices in Harsh Conditions

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Author : Kirsten Weide-Zaage
Publisher : CRC Press
ISBN 13 : 149874382X
Total Pages : 257 pages
Book Rating : 4.4/5 (987 download)

Book Synopsis Semiconductor Devices in Harsh Conditions by : Kirsten Weide-Zaage

Download or read book Semiconductor Devices in Harsh Conditions written by Kirsten Weide-Zaage and published by CRC Press. This book was released on 2016-11-25 with total page 257 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book introduces the reader to a number of challenges for the operation of electronic devices in various harsh environmental conditions. While some chapters focus on measuring and understanding the effects of these environments on electronic components, many also propose design solutions, whether in choice of material, innovative structures, or strategies for amelioration and repair. Many applications need electronics designed to operate in harsh environments. Readers will find, in this collection of topics, tools and ideas useful in their own pursuits and of interest to their intellectual curiosity. With a focus on radiation, operating conditions, sensor systems, package, and system design, the book is divided into three parts. The first part deals with sensing devices designed for operating in the presence of radiation, commercials of the shelf (COTS) products for space computing, and influences of single event upset. The second covers system and package design for harsh operating conditions. The third presents devices for biomedical applications under moisture and temperature loads in the frame of sensor systems and operating conditions.

Silicon Germanium

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Author : Raminderpal Singh
Publisher : John Wiley & Sons
ISBN 13 : 0471660914
Total Pages : 368 pages
Book Rating : 4.4/5 (716 download)

Book Synopsis Silicon Germanium by : Raminderpal Singh

Download or read book Silicon Germanium written by Raminderpal Singh and published by John Wiley & Sons. This book was released on 2004-03-15 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: "An excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications." -Ron Wilson, EETimes "SiGe technology has demonstrated the ability to provide excellent high-performance characteristics with very low noise, at high power gain, and with excellent linearity. This book is a comprehensive review of the technology and of the design methods that go with it." -Alberto Sangiovanni-Vincentelli Professor, University of California, Berkeley Cofounder, Chief Technology Officer, Member of Board Cadence Design Systems Inc. Filled with in-depth insights and expert advice, Silicon Germanium covers all the key aspects of this technology and its applications. Beginning with a brief introduction to and historical perspective of IBM's SiGe technology, this comprehensive guide quickly moves on to: * Detail many of IBM's SiGe technology development programs * Explore IBM's approach to device modeling and characterization-including predictive TCAD modeling * Discuss IBM's design automation and signal integrity knowledge and implementation methodologies * Illustrate design applications in a variety of IBM's SiGe technologies * Highlight details of highly integrated SiGe BiCMOS system-on-chip (SOC) design Written for RF/analog and mixed-signal designers, CAD designers, semiconductor students, and foundry process engineers worldwide, Silicon Germanium provides detailed insight into the modeling and design automation requirements for leading-edge RF/analog and mixed-signal products, and illustrates in-depth applications that can be implemented using IBM's advanced SiGe process technologies and design kits. "This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure-the process development, device modeling, and tool development." -Ron Wilson Silicon Engineering Editor, EETimes "This book chronicles the development of SiGe in detail, provides an in-depth look at the modeling and design automation requirements for making advanced applications using SiGe possible, and illustrates such applications as implemented using IBM's process technologies and design methods." -John Kelly Senior Vice President and Group Executive, Technology Group, IBM

Component Reliability for Electronic Systems

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Author : Titu I. Băjenescu
Publisher : Artech House
ISBN 13 : 1596934360
Total Pages : 706 pages
Book Rating : 4.5/5 (969 download)

Book Synopsis Component Reliability for Electronic Systems by : Titu I. Băjenescu

Download or read book Component Reliability for Electronic Systems written by Titu I. Băjenescu and published by Artech House. This book was released on 2010 with total page 706 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main reason for the premature breakdown of today's electronic products (computers, cars, tools, appliances, etc.) is the failure of the components used to build these products. Today professionals are looking for effective ways to minimize the degradation of electronic components to help ensure longer-lasting, more technically sound products and systems. This practical book offers engineers specific guidance on how to design more reliable components and build more reliable electronic systems. Professionals learn how to optimize a virtual component prototype, accurately monitor product reliability during the entire production process, and add the burn-in and selection procedures that are the most appropriate for the intended applications. Moreover, the book helps system designers ensure that all components are correctly applied, margins are adequate, wear-out failure modes are prevented during the expected duration of life, and system interfaces cannot lead to failure.

International Aerospace Abstracts

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Author :
Publisher :
ISBN 13 :
Total Pages : 1020 pages
Book Rating : 4.F/5 ( download)

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Download or read book International Aerospace Abstracts written by and published by . This book was released on 1999 with total page 1020 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Microwave Active Devices and Circuits for Communication

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Author : Subhash Chandra Bera
Publisher : Springer
ISBN 13 : 9811330042
Total Pages : 700 pages
Book Rating : 4.8/5 (113 download)

Book Synopsis Microwave Active Devices and Circuits for Communication by : Subhash Chandra Bera

Download or read book Microwave Active Devices and Circuits for Communication written by Subhash Chandra Bera and published by Springer. This book was released on 2018-12-11 with total page 700 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book discusses active devices and circuits for microwave communications. It begins with the basics of device physics and then explores the design of microwave communication systems including analysis and the implementation of different circuits. In addition to classic topics in microwave active devices, such as p-i-n diodes, Schottky diodes, step recovery diodes, BJT, HBT, MESFET, HFET, and various microwave circuits like switch, phase shifter, attenuator, detector, amplifier, multiplier and mixer, the book also covers modern areas such as Class-F power amplifiers, direct frequency modulators, linearizers, and equalizers. Most of the examples are based on practical devices available in commercial markets and the circuits presented are operational. The book uses analytical methods to derive values of circuit components without the need for any circuit design tools, in order to explain the theory of the circuits. All the given analytical expressions are also cross verified using commercially available microwave circuit design tools, and each chapter includes relevant diagrams and solved problems. It is intended for scholars in the field of electronics and communication engineering.

Dissertation Abstracts International

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Author :
Publisher :
ISBN 13 :
Total Pages : 858 pages
Book Rating : 4.F/5 ( download)

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Download or read book Dissertation Abstracts International written by and published by . This book was released on 2005 with total page 858 pages. Available in PDF, EPUB and Kindle. Book excerpt: