Etude De La Reponse Dosimetrique Du Nitrure De Gallium Gan

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Luminescence Study of Ion-Implanted Gallium Nitride

Author : Eric Silkowski
Publisher :
ISBN 13 : 9781423576570
Total Pages : 330 pages
Book Rating : 4.5/5 (765 download)

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Book Synopsis Luminescence Study of Ion-Implanted Gallium Nitride by : Eric Silkowski

Download or read book Luminescence Study of Ion-Implanted Gallium Nitride written by Eric Silkowski and published by . This book was released on 1996-11-01 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt: Luminescence and absorption measurements were used to demonstrate the efficacy of ion implantation for introducing various classes of dopants into GaN. A wide range of implantation and annealing studies were performed with several dopant species (Ar, Zn, C, O, Si, Be, Mg, Nd, Er). Room temperature ion implantation was performed on MOCVD- and MBE-grown GaN samples at energies between 100 and 1150 keV with doses ranging from 1 x 10(exp 13) to 1 x 10 (exp 15)/sq cm. Conventional furnace annealing in flowing NH3 or N2 gas resulted in good implantation damage recovery at an annealing temperature of 1000 deg C for 90 min. Annealing temperature was found to be the determining factor in implantation damage recovery. It was discovered that surface degradation occurred for annealing in an NH3 environment at temperatures above 1000 deg C. An optimal annealing temperature of 1000 deg C and an optimal annealing gas environment of NH3 were found for the optical activation of Zn, Mg, Er, and Nd. Several new luminescence features were observed for the various dopants. Zn- implanted GaN was found to have a strong luminescence peak in the blue at 2.86 eV. The energetic location and width of this luminescence peak was insensitive to temperature changes and excitation intensity changes. These properties suggested that an internal Zn center transition was responsible.

Gallium-Nitride (GaN) II

Author :
Publisher : Academic Press
ISBN 13 : 0080864554
Total Pages : 509 pages
Book Rating : 4.0/5 (88 download)

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Book Synopsis Gallium-Nitride (GaN) II by :

Download or read book Gallium-Nitride (GaN) II written by and published by Academic Press. This book was released on 1998-10-22 with total page 509 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Gallium Nitride (GaN)

Author :
Publisher :
ISBN 13 : 9780127521589
Total Pages : pages
Book Rating : 4.5/5 (215 download)

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Book Synopsis Gallium Nitride (GaN) by :

Download or read book Gallium Nitride (GaN) written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Properties, Processing and Applications of Gallium Nitride and Related Semiconductors

Author : James H. Edgar
Publisher : Institution of Electrical Engineers
ISBN 13 :
Total Pages : 692 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Properties, Processing and Applications of Gallium Nitride and Related Semiconductors by : James H. Edgar

Download or read book Properties, Processing and Applications of Gallium Nitride and Related Semiconductors written by James H. Edgar and published by Institution of Electrical Engineers. This book was released on 1999 with total page 692 pages. Available in PDF, EPUB and Kindle. Book excerpt: Based on its outstanding properties, including a wide energy band gap, high thermal conductivity, and high electron drift velocity, GaN is uniquely suited for many novel devices including solar-blind UV light detectors, high power microwave transistors, and cold cathode electron emitters. This excellent reference covers the basic physical and chemical properties, surveys existing processing technology, and presents summaries of the current state-of-the-art of devices.

Gallium Nitride Power Devices

Author : Hongyu Yu
Publisher : CRC Press
ISBN 13 : 1351767615
Total Pages : 298 pages
Book Rating : 4.3/5 (517 download)

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Book Synopsis Gallium Nitride Power Devices by : Hongyu Yu

Download or read book Gallium Nitride Power Devices written by Hongyu Yu and published by CRC Press. This book was released on 2017-07-06 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.

Gallium Nitride and Related Materials II: Volume 468

Author : C. R. Abernathy
Publisher : Materials Research Society
ISBN 13 : 9781558993723
Total Pages : 534 pages
Book Rating : 4.9/5 (937 download)

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Book Synopsis Gallium Nitride and Related Materials II: Volume 468 by : C. R. Abernathy

Download or read book Gallium Nitride and Related Materials II: Volume 468 written by C. R. Abernathy and published by Materials Research Society. This book was released on 1997-08-13 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book from MRS dedicated to III-Nitrides, focuses on developments in AlN, GaN, InN and their alloys that are now finding application in short-wavelength lasers (~400nm, cw at room temperature) and high-power electronics (2.8W/mm at GHz). Experts from fields including crystal growth, condensed matter theory, source chemistry, device processing and device design come together in the volume to address issues of both scientific and technological relevance. And while much of the book reports on advances in material preparation and the understanding of defect issues, similar advances in material and device processing are also reported. Topics include: growth and doping; substrates and substrate effects; characterization; processing and device performance and design.

Gallium Nitride (GaN) I

Author : Theodore D. Moustakas
Publisher : Academic Press
ISBN 13 : 9780125440561
Total Pages : 0 pages
Book Rating : 4.4/5 (45 download)

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Book Synopsis Gallium Nitride (GaN) I by : Theodore D. Moustakas

Download or read book Gallium Nitride (GaN) I written by Theodore D. Moustakas and published by Academic Press. This book was released on 1998 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Gallium Nitride Materials and Devices II

Author :
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (746 download)

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Book Synopsis Gallium Nitride Materials and Devices II by :

Download or read book Gallium Nitride Materials and Devices II written by and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Gallium Nitride Materials and Devices VI.

Author : Jen-Inn Chyi
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (113 download)

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Book Synopsis Gallium Nitride Materials and Devices VI. by : Jen-Inn Chyi

Download or read book Gallium Nitride Materials and Devices VI. written by Jen-Inn Chyi and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Gallium Nitride (GaN)

Author : Farid Medjdoub
Publisher : CRC Press
ISBN 13 : 9781482220032
Total Pages : 0 pages
Book Rating : 4.2/5 (2 download)

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Book Synopsis Gallium Nitride (GaN) by : Farid Medjdoub

Download or read book Gallium Nitride (GaN) written by Farid Medjdoub and published by CRC Press. This book was released on 2015-10-19 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in bright light-emitting diodes since the 1990s. Its sensitivity to ionizing radiation is low making it a suitable material for solar cell arrays for satellites. This book covers large aspects of GaN from the fundamental physics of this emerging material to the fabrication of devices and circuits that are already foreseen to replace standard Silicon or GaAs based in many applications.

Gallium Nitride Materials and Devices IV

Author :
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (746 download)

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Book Synopsis Gallium Nitride Materials and Devices IV by :

Download or read book Gallium Nitride Materials and Devices IV written by and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Author : Gaudenzio Meneghesso
Publisher : Springer
ISBN 13 : 9783319779935
Total Pages : 232 pages
Book Rating : 4.7/5 (799 download)

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Book Synopsis Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion by : Gaudenzio Meneghesso

Download or read book Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion written by Gaudenzio Meneghesso and published by Springer. This book was released on 2018-06-11 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.

Gallium Nitride Materials and Devices VIII

Author :
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (113 download)

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Book Synopsis Gallium Nitride Materials and Devices VIII by :

Download or read book Gallium Nitride Materials and Devices VIII written by and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Gallium Nitride (GaN) Specific Mechanical Phenomena and Their Influence on Reliability in Power HEMT Operation

Author : Florian Peter Pribahsnik
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (131 download)

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Book Synopsis Gallium Nitride (GaN) Specific Mechanical Phenomena and Their Influence on Reliability in Power HEMT Operation by : Florian Peter Pribahsnik

Download or read book Gallium Nitride (GaN) Specific Mechanical Phenomena and Their Influence on Reliability in Power HEMT Operation written by Florian Peter Pribahsnik and published by . This book was released on 2022 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: