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Estimators In Monte Carlo Semiconductor Electron Transport Simulations
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Book Synopsis Estimators in Monte Carlo Semiconductor Electron Transport Simulations by : Daniel William Bailey
Download or read book Estimators in Monte Carlo Semiconductor Electron Transport Simulations written by Daniel William Bailey and published by . This book was released on 1986 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Response Kernel Density Estimation Monte Carlo Method for Electron Transport by : Jie Du
Download or read book Response Kernel Density Estimation Monte Carlo Method for Electron Transport written by Jie Du and published by . This book was released on 1997 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Monte Carlo Method for Simulation of Electron Transport in Semiconductors by : Joel Reuben Phillips
Download or read book Monte Carlo Method for Simulation of Electron Transport in Semiconductors written by Joel Reuben Phillips and published by . This book was released on 1991 with total page 478 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Full-band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe by : Fabian M. Bufler
Download or read book Full-band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe written by Fabian M. Bufler and published by Herbert Utz Verlag. This book was released on 1998 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Monte Carlo Method for Semiconductor Device Simulation by : Carlo Jacoboni
Download or read book The Monte Carlo Method for Semiconductor Device Simulation written by Carlo Jacoboni and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.
Book Synopsis The Moment Condensed History Algorithm for Monte Carlo Electron Transport Simulations by :
Download or read book The Moment Condensed History Algorithm for Monte Carlo Electron Transport Simulations written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We introduce a new Condensed History algorithm for the Monte Carlo simulation of electron transport. To obtain more accurate simulations, the new algorithm preserves the mean position and the variance in the mean position exactly for electrons that have traveled a given path length and are traveling in a given direction. This is accomplished by deriving the zeroth-, first-, and second-order spatial moments of the Spencer-Lewis equation and employing this information directly in the Condensed History process. Numerical calculations demonstrate the advantages of our method over standard Condensed History methods.
Book Synopsis Hierarchical Device Simulation by : Christoph Jungemann
Download or read book Hierarchical Device Simulation written by Christoph Jungemann and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt: This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.
Book Synopsis Monte Carlo Simulation of Semiconductor Devices by : C. Moglestue
Download or read book Monte Carlo Simulation of Semiconductor Devices written by C. Moglestue and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 343 pages. Available in PDF, EPUB and Kindle. Book excerpt: Particle simulation of semiconductor devices is a rather new field which has started to catch the interest of the world's scientific community. It represents a time-continuous solution of Boltzmann's transport equation, or its quantum mechanical equivalent, and the field equation, without encountering the usual numerical problems associated with the direct solution. The technique is based on first physical principles by following in detail the transport histories of indi vidual particles and gives a profound insight into the physics of semiconductor devices. The method can be applied to devices of any geometrical complexity and material composition. It yields an accurate description of the device, which is not limited by the assumptions made behind the alternative drift diffusion and hydrodynamic models, which represent approximate solutions to the transport equation. While the development of the particle modelling technique has been hampered in the past by the cost of computer time, today this should not be held against using a method which gives a profound physical insight into individual devices and can be used to predict the properties of devices not yet manufactured. Employed in this way it can save the developer much time and large sums of money, both important considerations for the laboratory which wants to keep abreast of the field of device research. Applying it to al ready existing electronic components may lead to novel ideas for their improvement. The Monte Carlo particle simulation technique is applicable to microelectronic components of any arbitrary shape and complexity.
Book Synopsis Monte Carlo Simulation of Electron Transport Process in GaAs by : Kok Chin Teow
Download or read book Monte Carlo Simulation of Electron Transport Process in GaAs written by Kok Chin Teow and published by . This book was released on 1992 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ensemble Monte Carlo simulation of electron transport in AlGaAs/GaAs heterostructures by : Karel Nederveen
Download or read book Ensemble Monte Carlo simulation of electron transport in AlGaAs/GaAs heterostructures written by Karel Nederveen and published by . This book was released on 1989 with total page 182 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Monte Carlo Transport of Electrons and Photons by : T.M. Jenkins
Download or read book Monte Carlo Transport of Electrons and Photons written by T.M. Jenkins and published by Springer. This book was released on 1988 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt: For ten days at the end of September, 1987, a group of about 75 scientists from 21 different countries gathered in a restored monastery on a 750 meter high piece of rock jutting out of the Mediterranean Sea to discuss the simulation of the transport of electrons and photons using Monte Carlo techniques. When we first had the idea for this meeting, Ralph Nelson, who had organized a previous course at the "Ettore Majorana" Centre for Scientific Culture, suggested that Erice would be the ideal place for such a meeting. Nahum, Nelson and Rogers became Co-Directors of the Course, with the help of Alessandro Rindi, the Director of the School of Radiation Damage and Protection, and Professor Antonino Zichichi, Director of the "Ettore Majorana" Centre. The course was an outstanding success, both scientifically and socially, and those at the meeting will carry the marks of having attended, both intellectually and on a personal level where many friendships were made. The scientific content of the course was at a very high caliber, both because of the hard work done by all the lecturers in preparing their lectures (e. g. , complete copies of each lecture were available at the beginning of the course) and because of the high quality of the "students", many of whom were accomplished experts in the field. The outstanding facilities of the Centre contributed greatly to the success. This volume contains the formal record of the course lectures.
Book Synopsis Monte-Carlo Simulation of Electron Transport in III-Vsemiconductor Heterostructures by : M. E. Klausmeier-Brown
Download or read book Monte-Carlo Simulation of Electron Transport in III-Vsemiconductor Heterostructures written by M. E. Klausmeier-Brown and published by . This book was released on 1986 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Monte Carlo Device Simulator for Electron Transport in III-V Semiconductors by : Sidney Chee Mun Ng
Download or read book Monte Carlo Device Simulator for Electron Transport in III-V Semiconductors written by Sidney Chee Mun Ng and published by . This book was released on 1993 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Hot-Electron Transport in Semiconductors by : L. Reggiani
Download or read book Hot-Electron Transport in Semiconductors written by L. Reggiani and published by Springer Science & Business Media. This book was released on 2006-01-20 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hot-Electron Transport in Semiconductors (Topics in Applied Physics).
Book Synopsis Monte Carlo Device Simulation by : Karl Hess
Download or read book Monte Carlo Device Simulation written by Karl Hess and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt: Monte Carlo simulation is now a well established method for studying semiconductor devices and is particularly well suited to highlighting physical mechanisms and exploring material properties. Not surprisingly, the more completely the material properties are built into the simulation, up to and including the use of a full band structure, the more powerful is the method. Indeed, it is now becoming increasingly clear that phenomena such as reliabil ity related hot-electron effects in MOSFETs cannot be understood satisfac torily without using full band Monte Carlo. The IBM simulator DAMOCLES, therefore, represents a landmark of great significance. DAMOCLES sums up the total of Monte Carlo device modeling experience of the past, and reaches with its capabilities and opportunities into the distant future. This book, therefore, begins with a description of the IBM simulator. The second chapter gives an advanced introduction to the physical basis for Monte Carlo simulations and an outlook on why complex effects such as collisional broadening and intracollisional field effects can be important and how they can be included in the simulations. References to more basic intro the book. The third chapter ductory material can be found throughout describes a typical relationship of Monte Carlo simulations to experimental data and indicates a major difficulty, the vast number of deformation poten tials required to simulate transport throughout the entire Brillouin zone. The fourth chapter addresses possible further extensions of the Monte Carlo approach and subtleties of the electron-electron interaction.
Book Synopsis Simulation of Semiconductor Devices and Processes by : Siegfried Selberherr
Download or read book Simulation of Semiconductor Devices and Processes written by Siegfried Selberherr and published by Springer. This book was released on 1993 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Stochastic Approaches to Electron Transport in Micro- and Nanostructures by : Mihail Nedjalkov
Download or read book Stochastic Approaches to Electron Transport in Micro- and Nanostructures written by Mihail Nedjalkov and published by Springer Nature. This book was released on 2021-04-05 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book serves as a synergistic link between the development of mathematical models and the emergence of stochastic (Monte Carlo) methods applied for the simulation of current transport in electronic devices. Regarding the models, the historical evolution path, beginning from the classical charge carrier transport models for microelectronics to current quantum-based nanoelectronics, is explicatively followed. Accordingly, the solution methods are elucidated from the early phenomenological single particle algorithms applicable for stationary homogeneous physical conditions up to the complex algorithms required for quantum transport, based on particle generation and annihilation. The book fills the gap between monographs focusing on the development of the theory and the physical aspects of models, their application, and their solution methods and monographs dealing with the purely theoretical approaches for finding stochastic solutions of Fredholm integral equations.