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Author :
Publisher : Atlantica Séguier Frontières
ISBN 13 : 9782863322345
Total Pages : 680 pages
Book Rating : 4.3/5 (223 download)
Download or read book Essderc'98 written by and published by Atlantica Séguier Frontières. This book was released on 1998 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : M. Willander
Publisher : Elsevier
ISBN 13 : 008054102X
Total Pages : 325 pages
Book Rating : 4.0/5 (85 download)
Download or read book Silicon-Germanium Strained Layers and Heterostructures written by M. Willander and published by Elsevier. This book was released on 2003-10-02 with total page 325 pages. Available in PDF, EPUB and Kindle. Book excerpt: The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.* Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review* The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject* Appropriate for students and senior researchers
Author : Howard Huff
Publisher : Springer Science & Business Media
ISBN 13 : 9783540210818
Total Pages : 740 pages
Book Rating : 4.2/5 (18 download)
Download or read book High Dielectric Constant Materials written by Howard Huff and published by Springer Science & Business Media. This book was released on 2005 with total page 740 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.
Author : David Louis Harame
Publisher : The Electrochemical Society
ISBN 13 : 9781566774208
Total Pages : 1242 pages
Book Rating : 4.7/5 (742 download)
Download or read book SiGe--materials, Processing, and Devices written by David Louis Harame and published by The Electrochemical Society. This book was released on 2004 with total page 1242 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Morin Dehan
Publisher : Presses univ. de Louvain
ISBN 13 : 9782930344393
Total Pages : 238 pages
Book Rating : 4.3/5 (443 download)
Download or read book Characterization and Modeling of SOI RF Integrated Components written by Morin Dehan and published by Presses univ. de Louvain. This book was released on 2003 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: The boom of mobile communications leads to an increasing request of low cost and low power mixed mode integrated circuits. Maturity of SOI technology, and recent progresses of MOSFET's microwave performances, explain the success of silicon as compared to III-V technologies for low-cost multigigahertz analog applications. The design of efficient circuits requires accurate, wide-band models for both active and passive elements. Within this frame, passive and active components fabricated in SOI technologies have been studied. Various topologies of integrated transmission lines, like Coplanar Waveguides or thin film microstrip lines, have been analyzed. Also, a new physical model of integrated inductors has been developed. This model, based on a coupled line analysis of square spiral inductors, is scalable and independent of the technology used. Inductors with various spacing between strips, conductor widths, or number of turns can be simulated on different multi-layered substrates. Each layer that composes the substrate is defined using its electrical properties (permittivity, permeability, conductivity). The performances of integrated sub-micron MOSFETs are analyzed. New alternative structures of transistor (the Graded Channel MOSFET and the Dynamic Threshold MOSFET) are proposed to increase the performances of a CMOS technology for for analog, low power, low voltage, and microwave applications. They are studied from Low to High frequency. The graded channel MOSFET is an asymmetric doped channel MOSFET's which bring solutions for the problems of premature drain break-down, hot carrier effects, and threshold voltage (Vth) roll-off issues in deep submicrometer devices. The GCMOS processing is fully compatible with the conventional SOI MOSFET process flow, with no additional steps needed. The dynamic threshold voltage MOS is a MOS transistor for which the gate and the body channel are tied together. All DTMOS electrical properties can be deduced from standard MOS theory by introducing Vbs = Vgs. The main advantage of DTMOS over conventional MOS is its higher drive current at low bias conditions. To keep the body to source current as low as possible, the body bias voltage must be kept lower than 0.7 V. It seems obvious that the DTMOS transistor is an attractive component for low voltage applications.
Author :
Publisher : Allied Publishers
ISBN 13 : 9788177641004
Total Pages : 444 pages
Book Rating : 4.6/5 (41 download)
Download or read book Icccd-2000. written by and published by Allied Publishers. This book was released on 2000 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 530 pages
Book Rating : 4.E/5 ( download)
Download or read book The International Journal of Microcircuits and Electronic Packaging written by and published by . This book was released on 1999 with total page 530 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Yue Kuo
Publisher : Springer Science & Business Media
ISBN 13 : 9781402075063
Total Pages : 528 pages
Book Rating : 4.0/5 (75 download)
Download or read book Thin Film Transistors: Polycrystalline silicon thin film transistors written by Yue Kuo and published by Springer Science & Business Media. This book was released on 2004 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.
Author : Francis Balestra
Publisher : Springer Science & Business Media
ISBN 13 : 1475733186
Total Pages : 267 pages
Book Rating : 4.4/5 (757 download)
Download or read book Device and Circuit Cryogenic Operation for Low Temperature Electronics written by Francis Balestra and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 267 pages. Available in PDF, EPUB and Kindle. Book excerpt: Device and Circuit Cryogenic Operation for Low Temperature Electronics is a first in reviewing the performance and physical mechanisms of advanced devices and circuits at cryogenic temperatures that can be used for many applications. The first two chapters cover bulk silicon and SOI MOSFETs. The electronic transport in the inversion layer, the influence of impurity freeze-out, the special electrical properties of SOI structures, the device reliability and the interest of a low temperature operation for the ultimate integration of silicon down to nanometer dimensions are described. The next two chapters deal with Silicon-Germanium and III-V Heterojunction Bipolar Transistors, as well as III-V High Electron Mobility Transistors (HEMT). The basic physics of the SiGe HBT and its unique cryogenic capabilities, the optimization of such bipolar devices, and the performance of SiGe HBT BiCMOS technology at liquid nitrogen temperature are examined. The physical effects in III-V semiconductors at low temperature, the HEMT and HBT static, high frequency and noise properties, and the comparison of various cooled III-V devices are also addressed. The next chapter treats quantum effect devices made of silicon materials. The major quantum effects at low temperature, quantum wires, quantum dots as well as single electron devices and applications are investigated. The last chapter overviews the performances of cryogenic circuits and their applications. The low temperature properties and performance of inverters, multipliers, adders, operational amplifiers, memories, microprocessors, imaging devices, circuits and systems, sensors and read-out circuits are analyzed. Device and Circuit Cryogenic Operation for Low Temperature Electronics is useful for researchers, engineers, Ph.D. and M.S. students working in the field of advanced electron devices and circuits, new semiconductor materials, and low temperature electronics and physics.
Author : Peter J. Hesketh
Publisher : The Electrochemical Society
ISBN 13 : 9781566773720
Total Pages : 268 pages
Book Rating : 4.7/5 (737 download)
Download or read book Microfabricated Systems and MEMS VI written by Peter J. Hesketh and published by The Electrochemical Society. This book was released on 2002 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Electrochemical Society. Meeting
Publisher : The Electrochemical Society
ISBN 13 : 9781566773751
Total Pages : 538 pages
Book Rating : 4.7/5 (737 download)
Download or read book Silicon-on-insulator Technology and Devices XI written by Electrochemical Society. Meeting and published by The Electrochemical Society. This book was released on 2003 with total page 538 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Dimitris Tsoukalas
Publisher : Springer Science & Business Media
ISBN 13 : 3709162440
Total Pages : 463 pages
Book Rating : 4.7/5 (91 download)
Download or read book Simulation of Semiconductor Processes and Devices 2001 written by Dimitris Tsoukalas and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.
Author : Electrochemical Society. Meeting
Publisher : The Electrochemical Society
ISBN 13 : 9781566773768
Total Pages : 620 pages
Book Rating : 4.7/5 (737 download)
Download or read book ULSI Process Integration III written by Electrochemical Society. Meeting and published by The Electrochemical Society. This book was released on 2003 with total page 620 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Wolfgang Fahrner
Publisher : Springer Science & Business Media
ISBN 13 : 3540266216
Total Pages : 277 pages
Book Rating : 4.5/5 (42 download)
Download or read book Nanotechnology and Nanoelectronics written by Wolfgang Fahrner and published by Springer Science & Business Media. This book was released on 2005-12-05 with total page 277 pages. Available in PDF, EPUB and Kindle. Book excerpt: Split a human hair thirty thousand times, and you have the equivalent of a nanometer. The aim of this work is to provide an introduction into nanotechnology for the s- entifically interested. However, such an enterprise requires a balance between comprehensibility and scientific accuracy. In case of doubt, preference is given to the latter. Much more than in microtechnology – whose fundamentals we assume to be known – a certain range of engineering and natural sciences are interwoven in nanotechnology. For instance, newly developed tools from mechanical engine- ing are essential in the production of nanoelectronic structures. Vice versa, - chanical shifts in the nanometer range demand piezoelectric-operated actuators. Therefore, special attention is given to a comprehensive presentation of the matter. In our time, it is no longer sufficient to simply explain how an electronic device operates; the materials and procedures used for its production and the measuring instruments used for its characterization are equally important. The main chapters as well as several important sections in this book end in an evaluation of future prospects. Unfortunately, this way of separating coherent - scription from reflection and speculation could not be strictly maintained. So- times, the complete description of a device calls for discussion of its inherent - tential; the hasty reader in search of the general perspective is therefore advised to study this work’s technical chapters as well.
Author : Howard R. Huff
Publisher : The Electrochemical Society
ISBN 13 : 9781566773744
Total Pages : 650 pages
Book Rating : 4.7/5 (737 download)
Download or read book Semiconductor Silicon 2002 written by Howard R. Huff and published by The Electrochemical Society. This book was released on 2002 with total page 650 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher : The Electrochemical Society
ISBN 13 : 9781566774260
Total Pages : 574 pages
Book Rating : 4.7/5 (742 download)
Download or read book Microelectronics Technology and Devices written by and published by The Electrochemical Society. This book was released on 2005 with total page 574 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Michael S Shur
Publisher : World Scientific
ISBN 13 : 9814477478
Total Pages : 774 pages
Book Rating : 4.8/5 (144 download)
Download or read book Frontiers In Electronics (With Cd-rom) - Proceedings Of The Wofe-04 written by Michael S Shur and published by World Scientific. This book was released on 2006-08-10 with total page 774 pages. Available in PDF, EPUB and Kindle. Book excerpt: Frontiers in Electronics reports on the most recent developments and future trends in the electronics and photonics industry. The issues address CMOS, SOI and wide band gap semiconductor technology, terahertz technology, and bioelectronics, providing a unique interdisciplinary overview of the key emerging issues.This volume accurately reflects the recent research and development trends: from pure research to research and development; and its contributors are leading experts in microelectronics, nanoelectronics, and nanophotonics from academia, industry, and government agencies.
