Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Download Epr Investigation Of Neutron Transmutation Doped Silicon Boron full books in PDF, epub, and Kindle. Read online Epr Investigation Of Neutron Transmutation Doped Silicon Boron ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Author : Tuan Nang Pham
Publisher :
ISBN 13 :
Total Pages : 126 pages
Book Rating : 4.:/5 (961 download)
Download or read book EPR Investigation of Neutron Transmutation Doped Silicon: Boron written by Tuan Nang Pham and published by . This book was released on 1982 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Robert D. Larrabee
Publisher : Springer Science & Business Media
ISBN 13 : 1461326958
Total Pages : 337 pages
Book Rating : 4.4/5 (613 download)
Download or read book Neutron Transmutation Doping of Semiconductor Materials written by Robert D. Larrabee and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity.
Author : J. Meese
Publisher : Springer Science & Business Media
ISBN 13 : 1468482491
Total Pages : 368 pages
Book Rating : 4.4/5 (684 download)
Download or read book Neutron Transmutation Doping in Semiconductors written by J. Meese and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly interna tional in scope.
Author :
Publisher :
ISBN 13 :
Total Pages : 178 pages
Book Rating : 4.3/5 (91 download)
Download or read book Fabrication of Semiconductor Devices by Neutron Transmutation Doping written by and published by . This book was released on 1962-12 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : International Atomic Energy Agency
Publisher :
ISBN 13 : 9789201300102
Total Pages : 95 pages
Book Rating : 4.3/5 (1 download)
Download or read book Neutron Transmutation Doping of Silicon at Research Reactors written by International Atomic Energy Agency and published by . This book was released on 2012 with total page 95 pages. Available in PDF, EPUB and Kindle. Book excerpt: This publication details the processes and history of neutron transmutation doping of silicon, particularly its commercial pathway, followed by the requirements for a technologically modern and economically viable production scheme and the current trends in the global market for semiconductor products. It should serve as guidelines on the technical requirements, involved processes and required quality standards for the transmission of sound practices and advice for research reactor managers and operators planning commercial scale production of silicon. Furthermore, a detailed and specific database of most of the worlds research reactor facilities in this domain is included, featuring their irradiation capabilities, associated production capacities and processing.
Author : Jens Guldberg
Publisher : Springer Science & Business Media
ISBN 13 : 1461332613
Total Pages : 493 pages
Book Rating : 4.4/5 (613 download)
Download or read book Neutron-Transmutation-Doped Silicon written by Jens Guldberg and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 493 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future.
Author : Carl N. Klahr
Publisher :
ISBN 13 :
Total Pages : 84 pages
Book Rating : 4.3/5 (91 download)
Download or read book Fabrication of Silicon Microcircuits by Neutron Transmutation Doping written by Carl N. Klahr and published by . This book was released on 1966 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : D. R. Meyers
Publisher :
ISBN 13 :
Total Pages : 40 pages
Book Rating : 4.3/5 (121 download)
Download or read book Technical Impediments to a More Effective Utilization of Neutron Transmutation Doped Silicon for High-power Device Fabrication written by D. R. Meyers and published by . This book was released on 1980 with total page 40 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : D. Alexiev
Publisher :
ISBN 13 : 9780642598714
Total Pages : 11 pages
Book Rating : 4.5/5 (987 download)
Download or read book Neutron Transmutation Doping of Silicon for the Production of Radiation Detectors written by D. Alexiev and published by . This book was released on 1987 with total page 11 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Christopher Yuan-Ting Liao
Publisher :
ISBN 13 :
Total Pages : 142 pages
Book Rating : 4.:/5 (35 download)
Download or read book Neutron Transmutation Doping of Isotopically Enriched Silicon written by Christopher Yuan-Ting Liao and published by . This book was released on 2006 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Sheng S. Li
Publisher :
ISBN 13 :
Total Pages : 56 pages
Book Rating : 4.3/5 (121 download)
Download or read book The Theoretical and Experimental Study of the Temperature and Dopant Density Dependence of Hole Mobility, Effective Mass, and Resistivity in Boron-doped Silicon written by Sheng S. Li and published by . This book was released on 1979 with total page 56 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Richard Albert Gassman
Publisher :
ISBN 13 :
Total Pages : 150 pages
Book Rating : 4.:/5 (12 download)
Download or read book Isothermal Annealing Study of Neutron Transmutation Doped Silicon:gallium written by Richard Albert Gassman and published by . This book was released on 1983 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Pavel G. Baranov
Publisher : Springer
ISBN 13 : 3709111579
Total Pages : 524 pages
Book Rating : 4.7/5 (91 download)
Download or read book Magnetic Resonance of Semiconductors and Their Nanostructures written by Pavel G. Baranov and published by Springer. This book was released on 2017-03-20 with total page 524 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explains different magnetic resonance (MR) techniques and uses different combinations of these techniques to analyze defects in semiconductors and nanostructures. It also introduces novelties such as single defects MR and electron-paramagnetic-resonance-based methods: electron spin echo, electrically detected magnetic resonance, optically detected magnetic resonance and electron-nuclear double resonance – the designated tools for investigating the structural and spin properties of condensed systems, living matter, nanostructures and nanobiotechnology objects. Further, the authors address problems existing in semiconductor and nanotechnology sciences that can be resolved using MR, and discuss past, current and future applications of MR, with a focus on advances in MR methods. The book is intended for researchers in MR studies of semiconductors and nanostructures wanting a comprehensive review of what has been done in their own and related fields of study, as well as future perspectives.
Author :
Publisher :
ISBN 13 :
Total Pages : 864 pages
Book Rating : 4.:/5 (3 download)
Download or read book Energy Research Abstracts written by and published by . This book was released on 1983 with total page 864 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Helmut Heinrich
Publisher : Trans Tech Publications Ltd
ISBN 13 : 3035704813
Total Pages : 1722 pages
Book Rating : 4.0/5 (357 download)
Download or read book Defects in Semiconductors 17 written by Helmut Heinrich and published by Trans Tech Publications Ltd. This book was released on 1993-10-28 with total page 1722 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive issue presents 297 papers that cover a broad range of topics in the fundamental science of imperfections in semiconductor materials including the creation and/or origin, structure, electronic, optical, thermodynamical and chemical properties of defects, often also with strong relevance to technological problems in semiconductor devices.
Author :
Publisher :
ISBN 13 :
Total Pages : 860 pages
Book Rating : 4.:/5 (319 download)
Download or read book INIS Atomindex written by and published by . This book was released on 1988 with total page 860 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jens Guldberg
Publisher : Springer
ISBN 13 : 9780306407383
Total Pages : 0 pages
Book Rating : 4.4/5 (73 download)
Download or read book Neutron-Transmutation-Doped Silicon written by Jens Guldberg and published by Springer. This book was released on 1981-12-01 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future.
