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Engineering Of Metal Semiconductor Interfaces
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Book Synopsis Electronic Properties of Semiconductor Interfaces by : Winfried Mönch
Download or read book Electronic Properties of Semiconductor Interfaces written by Winfried Mönch and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.
Book Synopsis Metallization and Metal-Semiconductor Interfaces by : Inder P. Batra
Download or read book Metallization and Metal-Semiconductor Interfaces written by Inder P. Batra and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book represents the work presented at a NATO Advanced Research Workshop on "Metallization and Metal-Semiconductor Interfaces", held at the Technical University of Munich, Garching, W. Germany from 22-26 August 1988. The major focus of the workshop was to evaluate critically the progress made in the area of metal-semiconductor interfaces. The underlying theme was the mechanism of Schottky barrier formation and a serious as sessment of the various models. A significant fraction of the workshop time was also spent in discussing the interaction of alkali metals with semiconductors. Alkali metals on semi conductors form ordered overlayers and the resulting system often exhibits one-dimensional metallic properties. The nature of their interaction has introduced new and exciting com plexities and this was pursued at length during the lively discussions at the workshop. A half a day was devoted to Scanning Tunneling Microscopy, the emphasis being on its utility in providing structural and electronic character of low-coverage regime. The book should pro vide readers with the most current status of the research activity in the general area of metal-semiconductor interfaces at an international level. It should also serve as an excellent introduction to the field, since sufficient review type of material has also been included The workshop organizers, Dr. I. P. Batra (Director), mM Almaden Research Center, San Jose, Prof. S. Ciraci, Bilkent University, Ankara, Prof. C. Y. Pong, University of California, Davis, Prof. Dr. F. Koch (Local Chairman), Technical University Munich, Garching, Dr. H.
Book Synopsis Metal-semiconductor Contacts by : E. H. Rhoderick
Download or read book Metal-semiconductor Contacts written by E. H. Rhoderick and published by Oxford University Press, USA. This book was released on 1988 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt: This second edition brings a greatly expanded treatment of the physics of Schottky-barrier formation to its comprehensive discussion of modern semiconductor technology. Topics covered include the current/voltage relationship, the capacitance of rectifying contacts, and practical methods of fabricating contacts. Written for semiconductor technologists and physicists engaged in research on semiconductor interfaces, this text emphasizes practical implications wherever they are relevant to device technology.
Book Synopsis Band Structure Engineering in Semiconductor Microstructures by : R.A. Abram
Download or read book Band Structure Engineering in Semiconductor Microstructures written by R.A. Abram and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the proceedings of the NATO Advanced Research Workshop on Band Structure Engineering in Semiconductor Microstructures held at Il Ciocco, Castelvecchio Pascali in Tuscany between 10th and 15th April 1988. Research on semiconductor microstructures has expanded rapidly in recent years as a result of developments in the semiconductor growth and device fabrication technologies. The emergence of new semiconductor structures has facilitated a number of approaches to producing systems with certain features in their electronic structure which can lead to useful or interesting properties. The interest in band structure engineering has stimd ated a variety of physical investigations and nove 1 device concepts and the field now exhibits a fascinating interplay betwepn pure physics and device technology. Devices based on microstruc tures are useful vehicles for fundamental studies but also new device ideas require a thorough understanding of the basic physics. Around forty researchers gathered at I1 Ciocco in the Spring of 1988 to discuss band structure engineering in semiconductor microstructures.
Book Synopsis Metal-semiconductor Interfaces by : Akio Hiraki
Download or read book Metal-semiconductor Interfaces written by Akio Hiraki and published by IOS Press. This book was released on 1995 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrochemistry at Metal and Semiconductor Electrodes by : Norio Sato
Download or read book Electrochemistry at Metal and Semiconductor Electrodes written by Norio Sato and published by Elsevier. This book was released on 1998-10-09 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electrochemisty at Metal and Semiconductor Electrodes covers the structure of the electrical double layer and charge transfer reactions across the electrode/electrolyte interface. The purpose of the book is to integrate modern electrochemistry and semiconductor physics, thereby, providing a quantitative basis for understanding electrochemistry at metal and semiconductor electrodes. Electrons and ions are the principal particles which play the main role in electrochemistry. This text, therefore, emphasizes the energy level concepts of electrons and ions rather than the phenomenological thermodynamic and kinetic concepts on which most of the classical electrochemistry texts are based. This rationalization of the phenomenological concepts in terms of the physics of semiconductors should enable readers to develop more atomistic and quantitative insights into processes that occur at electrodes. The book incorporates many traditional disciplines of science and engineering such as interfacial chemistry, biochemistry, enzyme chemistry, membrane chemistry, metallurgy, modification of solid interfaces, and materials' corrosion. The text is intended to serve as an introduction for the study of advanced electrochemistry at electrodes and is aimed towards graduates and senior undergraduates studying materials and interfacial chemistry or those beginning research work in the field of electrochemistry.
Book Synopsis Control of Semiconductor Interfaces by : I. Ohdomari
Download or read book Control of Semiconductor Interfaces written by I. Ohdomari and published by Elsevier. This book was released on 2017-05-03 with total page 600 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses exclusively on control of interfacial properties and structures for semiconductor device applications from the point of view of improving and developing novel electrical properties. The following topics are covered: metal-semiconductors, semiconductor hetero-interfaces, characterization, semiconducting new materials, insulator-semiconductor, interfaces in device, control of interface formation, control of interface properties, contact metallization. A variety of up-to-date research topics such as atomic layer epitaxy, atomic layer passivation, atomic scale characterization including STM and SR techniques, single ion implementation, self-organization crystal growth, in situ measurements for process control and extremely high-spatial resolution analysis techniques, are also included. Furthermore it bridges the macroscopic, mesoscopic, and atomic-scale regimes of semicondutor interfaces, describing the state of the art in forming, controlling and characterizating unique semiconductor interfaces, which will be of practical importance in advanced devices. Intended for both technologists who require an up-to-date assessment of methods for interface formation, processing and characterization, and solid state researchers who desire the latest developments in understanding the basic mechanisms of interface physics, chemistry and electronics, this book will be a welcome addition to the existing literature.
Book Synopsis Physics of Semiconductor Devices by : Simon M. Sze
Download or read book Physics of Semiconductor Devices written by Simon M. Sze and published by John Wiley & Sons. This book was released on 2021-03-03 with total page 944 pages. Available in PDF, EPUB and Kindle. Book excerpt: The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters. Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices: Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices Offers completely updated and revised information that reflects advances in device concepts, performance, and application Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual for Instructor's only Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.
Book Synopsis Semiconductor Physical Electronics by : Sheng S. Li
Download or read book Semiconductor Physical Electronics written by Sheng S. Li and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this book is to provide the reader with a self-contained treatment of fundamen tal solid state and semiconductor device physics. The material presented in the text is based upon the lecture notes of a one-year graduate course sequence taught by this author for many years in the ·Department of Electrical Engineering of the University of Florida. It is intended as an introductory textbook for graduate students in electrical engineering. However, many students from other disciplines and backgrounds such as chemical engineering, materials science, and physics have also taken this course sequence, and will be interested in the material presented herein. This book may also serve as a general reference for device engineers in the semiconductor industry. The present volume covers a wide variety of topics on basic solid state physics and physical principles of various semiconductor devices. The main subjects covered include crystal structures, lattice dynamics, semiconductor statistics, energy band theory, excess carrier phenomena and recombination mechanisms, carrier transport and scattering mechanisms, optical properties, photoelectric effects, metal-semiconductor devices, the p--n junction diode, bipolar junction transistor, MOS devices, photonic devices, quantum effect devices, and high speed III-V semiconductor devices. The text presents a unified and balanced treatment of the physics of semiconductor materials and devices. It is intended to provide physicists and mat erials scientists with more device backgrounds, and device engineers with a broader knowledge of fundamental solid state physics.
Book Synopsis ULSI Process Integration 6 by : C. Claeys
Download or read book ULSI Process Integration 6 written by C. Claeys and published by The Electrochemical Society. This book was released on 2009-09 with total page 547 pages. Available in PDF, EPUB and Kindle. Book excerpt: ULSI Process Integration 6 covers all aspects of process integration. Sections are devoted to 1) Device Technologies, 2) Front-end-of-line integration (gate stacks, shallow junctions, dry etching, etc.), 3) Back-end-of-line integration (CMP, low-k, Cu interconnect, air-gaps, 3D packaging, etc.), 4) Alternative channel technologies (Ge, III-V, hybrid integration), and 5) Emerging technologies (CNT, graphene, polymer electronics, nanotubes).
Book Synopsis Heterojunctions and Metal Semiconductor Junctions by : A.G. Milnes
Download or read book Heterojunctions and Metal Semiconductor Junctions written by A.G. Milnes and published by Elsevier. This book was released on 2012-12-02 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heterojunctions and Metal-Semiconductor Junctions discusses semiconductor-semiconductor heterojunctions and metal-semiconductor heterojunctions, which are of significant practical importance today and also of considerable scientific interest, with worthwhile problems still to be explored and understood. Many classes of heterojunctions are believed to have new and valuable applications. Although some aspects of heterojunction behavior remain areas for continued scientific and technological study, the main outlines of the subject are clear. This book comprises nine chapters, and begins with an introduction to semiconductor heterojunctions. Succeeding chapters then discuss semiconductor p-n heterojunction models and diode behavior; heterojunction transistors; isotype (n-n, p-p) heterojunctions; optical properties of heterojunctions and heterojunction lasers; metal-semiconductor barriers; metal-semiconductor junction behavior; high yield photoemissive cathodes; and fabrication of heterojunctions. This book will be of interest to practitioners in the fields of applied physics.
Book Synopsis Plasmonic Catalysis by : Pedro H.C. Camargo
Download or read book Plasmonic Catalysis written by Pedro H.C. Camargo and published by John Wiley & Sons. This book was released on 2021-06-21 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: Explore this comprehensive discussion of the foundational and advanced topics in plasmonic catalysis from two leaders in the field Plasmonic Catalysis: From Fundamentals to Applications delivers a thorough treatment of plasmonic catalysis, from its theoretical foundations to myriad applications in industry and academia. In addition to the fundamentals, the book covers the theory, properties, synthesis, and various reaction types of plasmonic catalysis. It also covers its applications in reactions including oxidation, reduction, nitrogen fixation, CO2 reduction, and more. The book characterizes plasmonic catalytic systems and describes their properties, tackling the integration of conventional methods as well as new methods able to unravel the optical, electronic, and chemical properties of these systems. It also describes the fundamentals of controlled synthesis of metal nanoparticles relevant to plasmonic catalysis, as well as practical examples thereof. Plasmonic Catalysis covers a wide variety of other practical topics in the field, including hydrogenation reactions and the harvesting of LSPR-excited charge carriers. Readers will also benefit from the inclusion of: A thorough introduction to plasmonic catalysis, a theory of plasmons for catalysis and mechanisms, as well as optical properties of plasmonic-catalytic nanostructures An exploration of the synthesis of plasmonic nanoparticles for photo and electro catalysis, as well as plasmonic catalysis towards oxidation reactions and hydrogenation reactions Discussions of plasmonic catalysis for multi-electron processes and artificial photosynthesis and N2 fixation An examination of control over reaction selectivity in plasmonic catalysis Perfect for catalytic chemists, materials scientists, photochemists, and physical chemists, Plasmonic Catalysis: From Fundamentals to Applications will also earn a place in the libraries of physicists who seek a one-stop resource to enhance their understanding of applications in plasmonic catalysis.
Book Synopsis Handbook of Emerging Materials for Semiconductor Industry by : Young Suh Song
Download or read book Handbook of Emerging Materials for Semiconductor Industry written by Young Suh Song and published by Springer Nature. This book was released on with total page 930 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Recent Awards in Engineering written by and published by . This book was released on 1983 with total page 986 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Handbook of Surfaces and Interfaces of Materials, Five-Volume Set by : Hari Singh Nalwa
Download or read book Handbook of Surfaces and Interfaces of Materials, Five-Volume Set written by Hari Singh Nalwa and published by Elsevier. This book was released on 2001-10-26 with total page 1915 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook brings together, under a single cover, all aspects of the chemistry, physics, and engineering of surfaces and interfaces of materials currently studied in academic and industrial research. It covers different experimental and theoretical aspects of surfaces and interfaces, their physical properties, and spectroscopic techniques that have been applied to a wide class of inorganic, organic, polymer, and biological materials. The diversified technological areas of surface science reflect the explosion of scientific information on surfaces and interfaces of materials and their spectroscopic characterization. The large volume of experimental data on chemistry, physics, and engineering aspects of materials surfaces and interfaces remains scattered in so many different periodicals, therefore this handbook compilation is needed.The information presented in this multivolume reference draws on two decades of pioneering research on the surfaces and interfaces of materials to offer a complete perspective on the topic. These five volumes-Surface and Interface Phenomena; Surface Characterization and Properties; Nanostructures, Micelles, and Colloids; Thin Films and Layers; Biointerfaces and Applications-provide multidisciplinary review chapters and summarize the current status of the field covering important scientific and technological developments made over past decades in surfaces and interfaces of materials and spectroscopic techniques with contributions from internationally recognized experts from all over the world. Fully cross-referenced, this book has clear, precise, and wide appeal as an essential reference source long due for the scientific community. The complete reference on the topic of surfaces and interfaces of materialsThe information presented in this multivolume reference draws on two decades of pioneering researchProvides multidisciplinary review chapters and summarizes the current status of the fieldCovers important scientific and technological developments made over past decades in surfaces and interfaces of materials and spectroscopic techniquesContributions from internationally recognized experts from all over the world
Book Synopsis MOS Interface Physics, Process and Characterization by : Shengkai Wang
Download or read book MOS Interface Physics, Process and Characterization written by Shengkai Wang and published by CRC Press. This book was released on 2021-10-05 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt: The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit, and is therefore a fundamental building block of the information society. Indeed, high quality MOS structure is the key to achieving high performance devices and integrated circuits. Meanwhile, the control of interface physics, process and characterization methods determine the quality of MOS structure. This book tries to answer five key questions: Why are high-performance integrated circuits bonded together so closely with MOS structure? Which physical phenomena occur in MOS structure? How do these phenomena affect the performance of MOS structure? How can we observe and quantify these phenomena scientifically? How to control the above phenomena through process? Principles are explained based on common experimental phenomena, from sensibility to rationality, via abundant experimental examples focusing on MOS structure, including specific experimental steps with a strong level of operability. This book will be an essential reference for engineers in semiconductor related fields and academics and postgraduates within the field of microelectronics.
Book Synopsis Electronic Structure of Semiconductor Interfaces by : Winfried Mönch
Download or read book Electronic Structure of Semiconductor Interfaces written by Winfried Mönch and published by Springer Nature. This book was released on 2024 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: This concise volume examines the characteristic electronic parameters of semiconductor interfaces, namely the barrier heights of metal-semiconductor or Schottky contacts and the valence-band discontinuities of semiconductor-semiconductor interfaces or heterostructures. Both are determined by the same concept, namely the wave-function tails of electron states overlapping a semiconductor band gap directly at the interface. These interface-induced gap states (IFIGS) result from the complex band structure of the corresponding semiconductor. The IFIGS are characterized by two parameters, namely by their branch point, at which their charge character changes from predominantly valence-band- to conduction-band-like, and secondly by the proportionality factor or slope parameter of the corresponding electric-dipole term, which varies in proportion to the difference in the electronegativities of the two solids forming the interface. This IFIGS-and-electronegativity concept consistently and quantitatively explains the experimentally observed barrier heights of Schottky contacts as well as the valence-band offsets of heterostructures. Insulators are treated as wide band-gap semiconductors. In addition, this book: Explains intrinsic interface states of electron states that overlap the band gap of a semiconductor at the interface Includes experimental data on Schottky contacts including carrier height, ideality factor and flat-band barrier height Compares of Theoretical and Experimental Data for a range of semiconductors.
