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Author : Jeff J. Peterson
Publisher :
ISBN 13 :
Total Pages : 634 pages
Book Rating : 4.:/5 (65 download)
Download or read book Electronic and Material Characterization of SiGe and SiGeC Epitaxial Layers written by Jeff J. Peterson and published by . This book was released on 2002 with total page 634 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Peter John Bjeletich
Publisher :
ISBN 13 :
Total Pages : 480 pages
Book Rating : 4.:/5 (69 download)
Download or read book Characterization of Heteroepitaxial Silicon Germanium Carbon Layers for Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Applications written by Peter John Bjeletich and published by . This book was released on 2004 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : David Louis Harame
Publisher : The Electrochemical Society
ISBN 13 : 9781566774208
Total Pages : 1242 pages
Book Rating : 4.7/5 (742 download)
Download or read book SiGe--materials, Processing, and Devices written by David Louis Harame and published by The Electrochemical Society. This book was released on 2004 with total page 1242 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1420026585
Total Pages : 1248 pages
Book Rating : 4.4/5 (2 download)
Download or read book Silicon Heterostructure Handbook written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 1248 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.
Author : Eugene A. Fitzgerald
Publisher :
ISBN 13 :
Total Pages : 414 pages
Book Rating : 4.3/5 (91 download)
Download or read book Epitaxy and Applications of Si-Based Heterostructures: Volume 533 written by Eugene A. Fitzgerald and published by . This book was released on 1998 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt: The April 13-17, 1998 symposium held in San Francisco offered an intriguing mix of SiGe device and circuit technology, and the latest developments in SiGE materials and SiGeC alloys. The 53 papers pivot around the themes of: technologies and devices; devices, processing, and characterization; photonics and optoelectronics; epitaxy of quantum structures; SiGeC alloys; and epitaxy of SiGe/ related materials. A sample title from each of the six parts includes: carrier transport and velocity overshoot in strained Si on SiGe heterostructures, device and fabrication issues of high-performance Si/SiGe FETS, photonic crystals based on macroporous silicon, stacked layers of self-assembled Ge islands, photoluminescence in strain compensated Si/SiGeC multiple quantum wells, and a novel layer-by-layer heteroepitaxy of germanium on silicon (100) surface. Annotation copyrighted by Book News, Inc., Portland, OR
Author : M. A. Tischler
Publisher : Mrs Proceedings
ISBN 13 :
Total Pages : 488 pages
Book Rating : 4.3/5 (91 download)
Download or read book Silicon-Based Optoelectronic Materials: Volume 298 written by M. A. Tischler and published by Mrs Proceedings. This book was released on 1993-09-28 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author : S. Hall
Publisher : Springer Science & Business Media
ISBN 13 : 1402063784
Total Pages : 377 pages
Book Rating : 4.4/5 (2 download)
Download or read book Nanoscaled Semiconductor-on-Insulator Structures and Devices written by S. Hall and published by Springer Science & Business Media. This book was released on 2007-07-09 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book offers combined views on silicon-on-insulator (SOI) nanoscaled electronics from experts in the fields of materials science, device physics, electrical characterization and computer simulation. Coverage analyzes prospects of SOI nanoelectronics beyond Moore’s law and explains fundamental limits for CMOS, SOICMOS and single electron technologies.
Author : C. K. Maiti
Publisher : IET
ISBN 13 : 9780852967782
Total Pages : 520 pages
Book Rating : 4.9/5 (677 download)
Download or read book Strained Silicon Heterostructures written by C. K. Maiti and published by IET. This book was released on 2001 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in siliconheterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques has given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also for other fascinating novel quantum devices. This book provides an excellent introduction and valuable references for postgraduate students and research scientists.
Author :
Publisher :
ISBN 13 :
Total Pages : 702 pages
Book Rating : 4.:/5 (31 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Eugene Fitzgerald
Publisher :
ISBN 13 :
Total Pages : 552 pages
Book Rating : 4.3/5 (91 download)
Download or read book Strained Layer Epitaxy: Volume 379 written by Eugene Fitzgerald and published by . This book was released on 1995-11-09 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: An interdisciplinary discussion of key materials issues and controversies in strained layer epitaxy is presented in this new volume from MRS. Research involving GeSi alloys and Si:C alloys are well represented. In the case of GeSi alloys, utilizing both strained and relaxed structures appears to be a strong component of the current research. Applications, devices and synthesis of improved relaxed and strained materials are featured. Special efforts to integrate the III-V and IV communities were also made during this symposium, and those efforts are reflected in the proceedings volume as well. Results on compositional graded layers in both the GeSi and III-V materials systems are presented. Topics include: general issues; ordering/low dimensional structures; characterization; device applications; growth of Si-based materials; and growth of compound semiconductors.
Author : Chinmay K. Maiti
Publisher : CRC Press
ISBN 13 : 1000404935
Total Pages : 275 pages
Book Rating : 4.0/5 (4 download)
Download or read book Stress and Strain Engineering at Nanoscale in Semiconductor Devices written by Chinmay K. Maiti and published by CRC Press. This book was released on 2021-06-29 with total page 275 pages. Available in PDF, EPUB and Kindle. Book excerpt: Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.
Author : Mario Birkholz
Publisher : John Wiley & Sons
ISBN 13 : 3527607048
Total Pages : 378 pages
Book Rating : 4.5/5 (276 download)
Download or read book Thin Film Analysis by X-Ray Scattering written by Mario Birkholz and published by John Wiley & Sons. This book was released on 2006-05-12 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: With contributions by Paul F. Fewster and Christoph Genzel While X-ray diffraction investigation of powders and polycrystalline matter was at the forefront of materials science in the 1960s and 70s, high-tech applications at the beginning of the 21st century are driven by the materials science of thin films. Very much an interdisciplinary field, chemists, biochemists, materials scientists, physicists and engineers all have a common interest in thin films and their manifold uses and applications. Grain size, porosity, density, preferred orientation and other properties are important to know: whether thin films fulfill their intended function depends crucially on their structure and morphology once a chemical composition has been chosen. Although their backgrounds differ greatly, all the involved specialists a profound understanding of how structural properties may be determined in order to perform their respective tasks in search of new and modern materials, coatings and functions. The author undertakes this in-depth introduction to the field of thin film X-ray characterization in a clear and precise manner.
Author :
Publisher :
ISBN 13 :
Total Pages : 776 pages
Book Rating : 4.3/5 (91 download)
Download or read book American Doctoral Dissertations written by and published by . This book was released on 2002 with total page 776 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : J.S. Williams
Publisher : Newnes
ISBN 13 : 0444599746
Total Pages : 1157 pages
Book Rating : 4.4/5 (445 download)
Download or read book Ion Beam Modification of Materials written by J.S. Williams and published by Newnes. This book was released on 2012-12-02 with total page 1157 pages. Available in PDF, EPUB and Kindle. Book excerpt: This conference consisted of 15 oral sessions, including three plenary papers covering areas of general interest, 22 specialist invited papers and 51 contributed presentations as well as three poster sessions. There were several scientific highlights covering a diverse spectrum of materials and ion beam processing methods. These included a wide range of conventional and novel applications such as: optical displays and opto-electronics, motor vehicle and tooling parts, coatings tailored for desired properties, studies of fundamental defect properties, the production of novel (often buried) compounds, and treating biomedical materials. The study of nanocrystals produced by ion implantation in a range of host matrices, particularly for opto-electronics applications, was one especially new and exciting development. Despite several decades of study, major progress was reported at the conference in understanding defect evolution in semiconductors and the role of defects in transient impurity diffusion. The use of implantation to tune or isolate optical devices and in forming optically active centres and waveguides in semiconductors, polymers and oxide ceramics was a major focus of several presentations at the conference. The formation of hard coatings by ion assisted deposition or direct implantation was also an area which showed much recent progress. Ion beam techniques had also developed apace, particularly those based on plasma immersion ion implantation or alternative techniques for large area surface treatment. Finally, the use of ion beams for the direct treatment of cancerous tissue was a particularly novel and interesting application of ion beams.
Author : S. Pantellides
Publisher : CRC Press
ISBN 13 : 9781560329633
Total Pages : 552 pages
Book Rating : 4.3/5 (296 download)
Download or read book Silicon-Germanium Carbon Alloys written by S. Pantellides and published by CRC Press. This book was released on 2002-07-26 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: Carbon (C) and Silicon Germanium (SiGe) work like a magic sauce. At least in small concentrations, they make everything taste better. It is remarkable enough that SiGe, a new material, and the heterobipolar transistor, a new device, appear on the brink of impacting the exploding wireless market. The addition of C to SiGe, albeit in small concentrations, looks to have breakthrough potential. Here, at last, is proof that materials science can put a rocket booster on the silicon-mind, the silicon transistor. Scientific excitement arises, as always, from the new possibilities a multicomponent materials system offers. Bandgaps can be changed, strains can be tuned, and properties can be tailored. This is catnip to the materials scientist. The wide array of techniques applied here to the SiGeC system bear testimony to the ingenious approaches now available for mastering the complexities of new materials
Author : Yun Bao
Publisher :
ISBN 13 :
Total Pages : 250 pages
Book Rating : 4.3/5 (121 download)
Download or read book Electrical Characterization and Applications of Quantum Dot Superlattices written by Yun Bao and published by . This book was released on 2005 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : James R. Dekker
Publisher :
ISBN 13 :
Total Pages : 406 pages
Book Rating : 4.:/5 (58 download)
Download or read book Chemical Vapor Deposition of Epitaxial Silicon-germanium-carbon Alloys Using Cyclopropane as a Carbon Source Gas written by James R. Dekker and published by . This book was released on 1998 with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt:
