Electron Beam Fabrication and Performance Improvement of Submicron AlGaAs/GaAs MODFET High Speed Logic Devices for Circuit Applications

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ISBN 13 :
Total Pages : 388 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Electron Beam Fabrication and Performance Improvement of Submicron AlGaAs/GaAs MODFET High Speed Logic Devices for Circuit Applications by : William Lee Jones

Download or read book Electron Beam Fabrication and Performance Improvement of Submicron AlGaAs/GaAs MODFET High Speed Logic Devices for Circuit Applications written by William Lee Jones and published by . This book was released on 1985 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Design, Fabrication, and Performance of Aluminum Gallium Arsenide/gallium Arsenide Modulation-doped Field-effect Transistors for High-speed Applications

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ISBN 13 :
Total Pages : 468 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Design, Fabrication, and Performance of Aluminum Gallium Arsenide/gallium Arsenide Modulation-doped Field-effect Transistors for High-speed Applications by : Allen Nicholas Lepore

Download or read book Design, Fabrication, and Performance of Aluminum Gallium Arsenide/gallium Arsenide Modulation-doped Field-effect Transistors for High-speed Applications written by Allen Nicholas Lepore and published by . This book was released on 1988 with total page 468 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Dissertation Abstracts International

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ISBN 13 :
Total Pages : 598 pages
Book Rating : 4.X/5 (4 download)

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Book Synopsis Dissertation Abstracts International by :

Download or read book Dissertation Abstracts International written by and published by . This book was released on 1985-07 with total page 598 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Modulation-doped Field-effect Transistors

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Publisher : Institute of Electrical & Electronics Engineers(IEEE)
ISBN 13 :
Total Pages : 544 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Modulation-doped Field-effect Transistors by : Heinrich Daembkes

Download or read book Modulation-doped Field-effect Transistors written by Heinrich Daembkes and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1991 with total page 544 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Characterization of Modulation-doped Field-effect Transistors with Gate Lengths Down to 600 Angstroms

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ISBN 13 :
Total Pages : 310 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Characterization of Modulation-doped Field-effect Transistors with Gate Lengths Down to 600 Angstroms by : Paul Raymond De la Houssaye

Download or read book Characterization of Modulation-doped Field-effect Transistors with Gate Lengths Down to 600 Angstroms written by Paul Raymond De la Houssaye and published by . This book was released on 1988 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Electrical & Electronics Abstracts

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ISBN 13 :
Total Pages : 2240 pages
Book Rating : 4.3/5 (243 download)

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Japanese Technical Periodical Index

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ISBN 13 :
Total Pages : 572 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Japanese Technical Periodical Index by :

Download or read book Japanese Technical Periodical Index written by and published by . This book was released on 1987 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt:

International Aerospace Abstracts

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ISBN 13 :
Total Pages : 768 pages
Book Rating : 4.F/5 ( download)

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Download or read book International Aerospace Abstracts written by and published by . This book was released on 1987 with total page 768 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Chemical Abstracts

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ISBN 13 :
Total Pages : 2616 pages
Book Rating : 4.3/5 (91 download)

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Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2616 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Index to IEEE Publications

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ISBN 13 :
Total Pages : 848 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Index to IEEE Publications by : Institute of Electrical and Electronics Engineers

Download or read book Index to IEEE Publications written by Institute of Electrical and Electronics Engineers and published by . This book was released on 1990 with total page 848 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues for 1973- cover the entire IEEE technical literature.

Physics Briefs

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ISBN 13 :
Total Pages : 1094 pages
Book Rating : 4.3/5 (91 download)

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Download or read book Physics Briefs written by and published by . This book was released on 1991 with total page 1094 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Science Abstracts

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ISBN 13 :
Total Pages : 980 pages
Book Rating : 4.3/5 (243 download)

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Download or read book Science Abstracts written by and published by . This book was released on 1993 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Government Reports Announcements & Index

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ISBN 13 :
Total Pages : 1226 pages
Book Rating : 4.3/5 (243 download)

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Book Synopsis Government Reports Announcements & Index by :

Download or read book Government Reports Announcements & Index written by and published by . This book was released on 1988 with total page 1226 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Government Reports Annual Index

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ISBN 13 :
Total Pages : 1656 pages
Book Rating : 4.3/5 (243 download)

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Book Synopsis Government Reports Annual Index by :

Download or read book Government Reports Annual Index written by and published by . This book was released on 1991 with total page 1656 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Strain Effect in Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 1441905529
Total Pages : 353 pages
Book Rating : 4.4/5 (419 download)

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Book Synopsis Strain Effect in Semiconductors by : Yongke Sun

Download or read book Strain Effect in Semiconductors written by Yongke Sun and published by Springer Science & Business Media. This book was released on 2009-11-14 with total page 353 pages. Available in PDF, EPUB and Kindle. Book excerpt: Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. Discusses relevant applications of strain while also focusing on the fundamental physics pertaining to bulk, planar, and scaled nano-devices. Hence, this book is relevant for current strained Si logic technology as well as for understanding the physics and scaling for future strained nano-scale devices.

Handbook for III-V High Electron Mobility Transistor Technologies

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Publisher : CRC Press
ISBN 13 : 0429862520
Total Pages : 434 pages
Book Rating : 4.4/5 (298 download)

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Book Synopsis Handbook for III-V High Electron Mobility Transistor Technologies by : D. Nirmal

Download or read book Handbook for III-V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

III-Nitride Electronic Devices

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Publisher : Academic Press
ISBN 13 : 0128175443
Total Pages : 540 pages
Book Rating : 4.1/5 (281 download)

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Book Synopsis III-Nitride Electronic Devices by :

Download or read book III-Nitride Electronic Devices written by and published by Academic Press. This book was released on 2019-10-18 with total page 540 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more.