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Electromigration In Ulsi Interconnections
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Book Synopsis Electromigration in ULSI Interconnections by : Cher Ming Tan
Download or read book Electromigration in ULSI Interconnections written by Cher Ming Tan and published by World Scientific. This book was released on 2010 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed.
Book Synopsis Electromigration In Ulsi Interconnections by : Cher Ming Tan
Download or read book Electromigration In Ulsi Interconnections written by Cher Ming Tan and published by World Scientific. This book was released on 2010-06-25 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained.The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed.
Book Synopsis Electromigration in Ulsi Interconnects by : Cher Ming Tan
Download or read book Electromigration in Ulsi Interconnects written by Cher Ming Tan and published by . This book was released on 2007 with total page 75 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electromigration in Cu Interconnects by : Dr. Arijit Roy
Download or read book Electromigration in Cu Interconnects written by Dr. Arijit Roy and published by LAP Lambert Academic Publishing. This book was released on 2011-07 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work is intended for the beginners and the advanced readers. Electromigration is VLSI/ULSI interconnection remains one of the major failure issues in microelectronics and electromigration remains an attractive research area in last few decades. This work attempts to explore the driving force formalism of the electromigration phenomenon.The prime interest of this work is to investigate the physics of failure in submicron (down to 100 nm wide) Cu interconnections including the effect of surrounding materials. A combined driving force model, including the forces from the stress and temperature gradients is presented. In order to develop the combined driving force model, commercial finite element analysis package is used. Plenty of experiments on Cu damascene interconnects are conducted, and extensive failure analyses are performed to investigate the root causes of electromigration failure. Good correlations between the model predictions and experiments are obtained. The future challenges on the study of electromigration are also discussed.
Book Synopsis Experimental Studies of Electromigration in Advanced Interconnect Systems for Future ULSI Technology by : Richard Frankovic
Download or read book Experimental Studies of Electromigration in Advanced Interconnect Systems for Future ULSI Technology written by Richard Frankovic and published by . This book was released on 1996 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections by : Cher Ming Tan
Download or read book Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections written by Cher Ming Tan and published by Springer Science & Business Media. This book was released on 2011-03-28 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections provides a detailed description of the application of finite element methods (FEMs) to the study of ULSI interconnect reliability. Over the past two decades the application of FEMs has become widespread and continues to lead to a much better understanding of reliability physics. To help readers cope with the increasing sophistication of FEMs’ applications to interconnect reliability, Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections will: introduce the principle of FEMs; review numerical modeling of ULSI interconnect reliability; describe the physical mechanism of ULSI interconnect reliability encountered in the electronics industry; and discuss in detail the use of FEMs to understand and improve ULSI interconnect reliability from both the physical and practical perspective, incorporating the Monte Carlo method. A full-scale review of the numerical modeling methodology used in the study of interconnect reliability highlights useful and noteworthy techniques that have been developed recently. Many illustrations are used throughout the book to improve the reader’s understanding of the methodology and its verification. Actual experimental results and micrographs on ULSI interconnects are also included. Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections is a good reference for researchers who are working on interconnect reliability modeling, as well as for those who want to know more about FEMs for reliability applications. It gives readers a thorough understanding of the applications of FEM to reliability modeling and an appreciation of the strengths and weaknesses of various numerical models for interconnect reliability.
Book Synopsis Optimization of Copper Interconnection Circuits for 0.25um ULSI Technology by : Ka-Po Tsoi
Download or read book Optimization of Copper Interconnection Circuits for 0.25um ULSI Technology written by Ka-Po Tsoi and published by . This book was released on 1995 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electromigration in Integrated Circuit Interconnects by : Peter John Clarke
Download or read book Electromigration in Integrated Circuit Interconnects written by Peter John Clarke and published by . This book was released on 1993 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Copper Interconnect Technology by : Tapan Gupta
Download or read book Copper Interconnect Technology written by Tapan Gupta and published by Springer Science & Business Media. This book was released on 2010-01-22 with total page 433 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since overall circuit performance has depended primarily on transistor properties, previous efforts to enhance circuit and system speed were focused on transistors as well. During the last decade, however, the parasitic resistance, capacitance, and inductance associated with interconnections began to influence circuit performance and will be the primary factors in the evolution of nanoscale ULSI technology. Because metallic conductivity and resistance to electromigration of bulk copper (Cu) are better than aluminum, use of copper and low-k materials is now prevalent in the international microelectronics industry. As the feature size of the Cu-lines forming interconnects is scaled, resistivity of the lines increases. At the same time electromigration and stress-induced voids due to increased current density become significant reliability issues. Although copper/low-k technology has become fairly mature, there is no single book available on the promise and challenges of these next-generation technologies. In this book, a leader in the field describes advanced laser systems with lower radiation wavelengths, photolithography materials, and mathematical modeling approaches to address the challenges of Cu-interconnect technology.
Book Synopsis Electromigration at Via Contacts in Multilevel Interconnect Systems by : Lawrence Peter Muray
Download or read book Electromigration at Via Contacts in Multilevel Interconnect Systems written by Lawrence Peter Muray and published by . This book was released on 1990 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electromigration Failure and Reliability of Single-crystal and Polycyrstalline Aluminum Interconnects for Integrated Circuits by : Young-Chang Joo
Download or read book Electromigration Failure and Reliability of Single-crystal and Polycyrstalline Aluminum Interconnects for Integrated Circuits written by Young-Chang Joo and published by . This book was released on 1995 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Graphene and VLSI Interconnects by : Cher-Ming Tan
Download or read book Graphene and VLSI Interconnects written by Cher-Ming Tan and published by CRC Press. This book was released on 2021-11-24 with total page 121 pages. Available in PDF, EPUB and Kindle. Book excerpt: Copper (Cu) has been used as an interconnection material in the semiconductor industry for years owing to its best balance of conductivity and performance. However, it is running out of steam as it is approaching its limits with respect to electrical performance and reliability. Graphene is a non-metal material, but it can help to improve electromigration (EM) performance of Cu because of its excellent properties. Combining graphene with Cu for very large-scale integration (VLSI) interconnects can be a viable solution. The incorporation of graphene into Cu allows the present Cu fabrication back-end process to remain unaltered, except for the small step of “inserting” graphene into Cu. Therefore, it has a great potential to revolutionize the VLSI integrated circuit (VLSI-IC) industry and appeal for further advancement of the semiconductor industry. This book is a compilation of comprehensive studies done on the properties of graphene and its synthesis methods suitable for applications of VLSI interconnects. It introduces the development of a new method to synthesize graphene, wherein it not only discusses the method to grow graphene over Cu but also allows the reader to know how to optimize graphene growth, using statistical design of experiments (DoE), on Cu interconnects in order to obtain good-quality and reliable interconnects. It provides a basic understanding of graphene–Cu interaction mechanism and evaluates the electrical and EM performance of graphenated Cu interconnects.
Book Synopsis Electromigration Behavior and Reliability of Aluminum-based Multilevel Interconnects for Integrated Circuits by : Harold Kahn
Download or read book Electromigration Behavior and Reliability of Aluminum-based Multilevel Interconnects for Integrated Circuits written by Harold Kahn and published by . This book was released on 1992 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Advanced Interconnects for ULSI Technology by : Mikhail Baklanov
Download or read book Advanced Interconnects for ULSI Technology written by Mikhail Baklanov and published by John Wiley & Sons. This book was released on 2012-04-02 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.
Book Synopsis Electromigration Failure and Reliability of Single-crystal and Polycrystalline Aluminum Interconnects for Integrated Circuits by : Young-Chang Joo
Download or read book Electromigration Failure and Reliability of Single-crystal and Polycrystalline Aluminum Interconnects for Integrated Circuits written by Young-Chang Joo and published by . This book was released on 1995 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis A Network Model for Electromigration Failure of Interconnects by :
Download or read book A Network Model for Electromigration Failure of Interconnects written by and published by . This book was released on 1991 with total page 21 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Modeling of and Experiments Characterizing Electromigration-induced Failures in Interconnects by : Vaibhav Kumar Andleigh
Download or read book Modeling of and Experiments Characterizing Electromigration-induced Failures in Interconnects written by Vaibhav Kumar Andleigh and published by . This book was released on 2001 with total page 666 pages. Available in PDF, EPUB and Kindle. Book excerpt: (Cont.) A failure mechanism map constructed for damascene Cu demonstrates the absence of immortality by resistance saturation due to the shunt structure. Finally, proposed damascene designs eliminating the diffusion barrier at the studs may be expected to have an adverse effect on interconnect reliability due to the loss of short length effects. The test structure developed in this thesis provides a simple means of testing the effects of new shunt and barrier layer technologies on the reliability of Cu-based interconnects. Through the use of the simulation, an accurate methodology for predicting the reliability of Al- and Cu-based interconnects in semiconductor chips has been developed. MIT/EmSim is now being used by Motorola and LSI Logic for evaluating interconnect reliability during the design of future Cu interconnects, and has also been used by numerous SRC-companies and universities through EmSim-Web for electromigration research.
