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Author : Thomas Edward Kazior
Publisher :
ISBN 13 :
Total Pages : 290 pages
Book Rating : 4.:/5 (992 download)
Download or read book Electrical Properties of the GaAs-Insulator Interface written by Thomas Edward Kazior and published by . This book was released on 1982 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Ashish K. Verma
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (273 download)
Download or read book Electrical Properties of Low Temperature GaAs Layers and Interfaces written by Ashish K. Verma and published by . This book was released on 1992 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Srinivasan Varadarajan
Publisher :
ISBN 13 :
Total Pages : 236 pages
Book Rating : 4.:/5 (966 download)
Download or read book The Electrical Properties of the Anodic Oxide/GaAs Interface written by Srinivasan Varadarajan and published by . This book was released on 1981 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Carl Wilmsen
Publisher : Springer Science & Business Media
ISBN 13 : 1468448358
Total Pages : 472 pages
Book Rating : 4.4/5 (684 download)
Download or read book Physics and Chemistry of III-V Compound Semiconductor Interfaces written by Carl Wilmsen and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
Author : Winfried Mönch
Publisher : Springer Science & Business Media
ISBN 13 : 3662069458
Total Pages : 269 pages
Book Rating : 4.6/5 (62 download)
Download or read book Electronic Properties of Semiconductor Interfaces written by Winfried Mönch and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.
Author : Sadao Adachi
Publisher : World Scientific
ISBN 13 : 9789810219253
Total Pages : 700 pages
Book Rating : 4.2/5 (192 download)
Download or read book GaAs and Related Materials written by Sadao Adachi and published by World Scientific. This book was released on 1994 with total page 700 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the various material properties of bulk GaAs and related materials, and aspects of the physics of artificial semiconductor microstructures, such as quantum wells and superlattices, made of these materials. A complete set of the material properties are considered in this book. They are structural properties; thermal properties; elastic and lattice vibronic properties; collective effects and some response characteristics; electronic energy-band structure and consequences; optical, elasto-optic, and electro-optic properties; and carrier transport properties. This book attempts to summarize, in graphical and tabular forms, most of the important theoretical and experimental results on these material properties. It contains a large number of references useful for further study. Timely topics are discussed as well. This book will be of interest to graduate students, scientists and engineers working on semiconductors.
Author : Günter Weimann
Publisher : CRC Press
ISBN 13 : 9780750302951
Total Pages : 880 pages
Book Rating : 4.3/5 (29 download)
Download or read book Gallium Arsenide and Related Compounds 1993, Proceedings of the 20th INT Symposium, 29 August - 2 September 1993, Freiburg im Braunschweig, Germany written by Günter Weimann and published by CRC Press. This book was released on 1994-01-01 with total page 880 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.
Author :
Publisher : INSPEC
ISBN 13 :
Total Pages : 370 pages
Book Rating : 4.3/5 (91 download)
Download or read book Properties of Gallium Arsenide written by and published by INSPEC. This book was released on 1986 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : M. J. Howes
Publisher :
ISBN 13 :
Total Pages : 608 pages
Book Rating : 4.3/5 (91 download)
Download or read book Gallium Arsenide written by M. J. Howes and published by . This book was released on 1985 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the seventh volume in the Wiley Series in Solid State Devices and Circuits, and deals comprehensively with the use of gallium arsenide for high frequency and high speed circuits.
Author : Martina Müller
Publisher : Forschungszentrum Jülich
ISBN 13 : 3893364935
Total Pages : 113 pages
Book Rating : 4.8/5 (933 download)
Download or read book Electronic Structure of Ferromagnet Insulator Interfaces: Fe/MgO and Co/MgO written by Martina Müller and published by Forschungszentrum Jülich. This book was released on 2007 with total page 113 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : S. Roy Morrison
Publisher :
ISBN 13 :
Total Pages : 6 pages
Book Rating : 4.:/5 (227 download)
Download or read book Studies of the GaAs/Oxide Interface Using A Liquid Electrode written by S. Roy Morrison and published by . This book was released on 1980 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: Anodically grown oxides on GaAs were produced and their electrical properties measured by electrochemical techniques. It was concluded that residual unoxidized arsenic dissolved in the oxide causes poor insulating characteristics, and methods to correct the problem were examined. (Author).
Author : John Charles Reed
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (774 download)
Download or read book Growth and Electronic Properties of Gallium Arsenide and Germanium Metal Insulator Semiconductor Structures written by John Charles Reed and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The metal insulator semiconductor (MIS) structure is arguably the most technologically important type of solid in existence. The microelectronics revolution of the last thirty years is made possible largely due to the ability to realize extremely high quality metal/SiO$sb2$/Si metal oxide semiconductor (MOS) structures. Unfortunately, silicon does not stand out in its ability to pass charge carriers with the highest speed. Significant improvements in the performance of many areas of electronics would result if another, high mobility semiconductor could be implemented into a high quality MIS structure. In this thesis, MIS structures incorporating two high-mobility semiconductors, GaAs and Ge, are investigated. An in situ, plasma-enhanced chemical vapor deposition system has been constructed which allows deposition of Si-based insulators and group IV semiconductors on the pristine GaAs or Ge surface. For the GaAs MIS system, a thin Si/Ge interlayer between the insulator and GaAs surface is found to improve the insulator/GaAs interface. This has allowed the realization of high transconductance GaAs metal insulator semiconductor field effect transistors (MISFETs). For the Ge MIS system, the growth of Ge on GaAs at 250$spcirc$C while maintaining a low interface trap density at the insulator/Ge interface is shown to be possible. The high hole mobility of Ge and high electron mobility of GaAs suggest possible uses of this structure for high performance complementary metal insulator semiconductor (CMIS) applications.
Author : C.R.M. Grovenor
Publisher : Routledge
ISBN 13 : 1351431544
Total Pages : 557 pages
Book Rating : 4.3/5 (514 download)
Download or read book Microelectronic Materials written by C.R.M. Grovenor and published by Routledge. This book was released on 2017-10-05 with total page 557 pages. Available in PDF, EPUB and Kindle. Book excerpt: This practical book shows how an understanding of structure, thermodynamics, and electrical properties can explain some of the choices of materials used in microelectronics, and can assist in the design of new materials for specific applications. It emphasizes the importance of the phase chemistry of semiconductor and metal systems for ensuring the long-term stability of new devices. The book discusses single-crystal and polycrystalline silicon, aluminium- and gold-based metallisation schemes, packaging semiconductor devices, failure analysis, and the suitability of various materials for optoelectronic devices and solar cells. It has been designed for senior undergraduates, graduates, and researchers in physics, electronic engineering, and materials science.
Author : Kompa, Günter
Publisher : kassel university press GmbH
ISBN 13 : 3862195414
Total Pages : 762 pages
Book Rating : 4.8/5 (621 download)
Download or read book Basic Properties of III-V Devices – Understanding Mysterious Trapping Phenomena written by Kompa, Günter and published by kassel university press GmbH. This book was released on 2014 with total page 762 pages. Available in PDF, EPUB and Kindle. Book excerpt: Trapping effects in III-V devices pose a great challenge to any microwave device modeler. Understanding their physical origins is of prime importance to create physics-related reliable device models. The treatment of trapping phenomena is commonly beyond the classical higher-education level of communication engineers. This book provides any basic material needed to understand trapping effects occurring primarily in GaAs and GaN power HEMT devices. As the text material covers interdisciplinary topics such as crystal defects and localized charges, trap centers and trap dynamics, deep-level transient spectroscopy, and trap centers in passivation layers, the book will be of interest to graduate students of electrical engineering, communication engineering, and physics as well as materials, device, and circuit engineers in research and industry.
Author : Norman G. Einspruch
Publisher : Academic Press
ISBN 13 : 1483217760
Total Pages : 396 pages
Book Rating : 4.4/5 (832 download)
Download or read book Surface and Interface Effects in VLSI written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 10: Surface and Interface Effects in VLSI provides the advances made in the science of semiconductor surface and interface as they relate to electronics. This volume aims to provide a better understanding and control of surface and interface related properties. The book begins with an introductory chapter on the intimate link between interfaces and devices. The book is then divided into two parts. The first part covers the chemical and geometric structures of prototypical VLSI interfaces. Subjects detailed include, the technologically most important interface, Si-SiO2 and the interplay between interface chemistry and the causes for metal-semiconductor contact behavior, primarily in the III-Vs. The following section deals primarily with the electronic properties of interfaces. Under this section, compound semiconductors, semiconductor-semiconductor interface, constraints that the microscopic interface places on architectures involving metal-semiconductor (MESFET), "Ohmic" contacts, and the behavior of very small, high-speed devices are discussed extensively. The final chapter shows that the Si - SiO2 interface can play a major role in determining carrier transport when MOSFETS are scaled down to ULSI dimensions. Engineers, designers, and scientists will find the book very useful.
Author :
Publisher :
ISBN 13 :
Total Pages : 272 pages
Book Rating : 4.:/5 (31 download)
Download or read book Research in Progress written by and published by . This book was released on 1990 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Harold L. Grubin
Publisher : Springer Science & Business Media
ISBN 13 : 1489923829
Total Pages : 729 pages
Book Rating : 4.4/5 (899 download)
Download or read book The Physics of Submicron Semiconductor Devices written by Harold L. Grubin and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 729 pages. Available in PDF, EPUB and Kindle. Book excerpt: The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr.
