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Author : Bin Wu
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (273 download)
Download or read book Electrical Properties of MBE-Grown Low-temperature GaAs written by Bin Wu and published by . This book was released on 1992 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Xiang Gao
Publisher :
ISBN 13 :
Total Pages : 186 pages
Book Rating : 4.:/5 (331 download)
Download or read book Optical Properties of Low Temperature MBE Grown GaAs written by Xiang Gao and published by . This book was released on 1995 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : James P Ibbetson
Publisher :
ISBN 13 :
Total Pages : 332 pages
Book Rating : 4.:/5 (399 download)
Download or read book Electrical Characterization of Nonstoichiometric GaAs Grown at Low Temperature by Molecular Beam Epitaxy written by James P Ibbetson and published by . This book was released on 1997 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Gerald B. Stringfellow
Publisher : CRC Press
ISBN 13 : 1000157067
Total Pages : 696 pages
Book Rating : 4.0/5 (1 download)
Download or read book Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA written by Gerald B. Stringfellow and published by CRC Press. This book was released on 2020-11-26 with total page 696 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.
Author : Ikegami
Publisher : CRC Press
ISBN 13 : 9780750302500
Total Pages : 1002 pages
Book Rating : 4.3/5 (25 download)
Download or read book Gallium Arsenide and Related Compounds 1992, Proceedings of the 19th INT Symposium, 28 September-2 October 1992, Karuizawa, Japan written by Ikegami and published by CRC Press. This book was released on 1993-01-01 with total page 1002 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bringing together international experts from 16 countries, Gallium Arsenide and Related Compounds 1992 focuses on device applications for Gallium Arsenide and related compounds. A topic of importance discussed is the first GaAs supercomputer from Fujitsu. The book also explores carbon doping and device applications in laser diodes, light modulators, and amplifiers, emphasizing business opportunity in consumer applications such as personal communications and TV tuners. It includes an account of the use of scanning tunneling microscopies in GaAs and related compounds. This book is ideal for physicists, materials scientists, and electronics and electrical engineers involved in III-V compound research.
Author : Takashi Hariu
Publisher : World Scientific
ISBN 13 : 9789971508395
Total Pages : 356 pages
Book Rating : 4.5/5 (83 download)
Download or read book Low Temperature Epitaxial Growth of Semiconductors written by Takashi Hariu and published by World Scientific. This book was released on 1991 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole.
Author : Herb Goronkin
Publisher : CRC Press
ISBN 13 : 9780750302265
Total Pages : 946 pages
Book Rating : 4.3/5 (22 download)
Download or read book Compound Semiconductors 1994, Proceedings of the Twenty-First INT Symposium on Compound Semiconductors held in San Diego, California, 18-22 September 1994 written by Herb Goronkin and published by CRC Press. This book was released on 1995-01-01 with total page 946 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound Semiconductors 1994 provides a comprehensive overview of research and applications of gallium arsenide, indium phosphide, silicon carbide, and other compound semiconducting materials. Contributed by leading experts, the book discusses growth, characterization, processing techniques, device applications, high-power, high-temperature semiconductor devices, visible emitters and optoelectronic integrated circuits (OEICs), heterojunction transistors, nanoelectronics, and nanophotonics, and simulation and modeling. The book is an essential reference for researchers working on the fabrication of semiconductors, characterization of materials, and their applications for devices, such as lasers, photodiodes, sensors, and transistors, particularly in the high-speed telecommunications industries.
Author : Robin F.C. Farrow
Publisher : Elsevier
ISBN 13 : 0815518404
Total Pages : 795 pages
Book Rating : 4.8/5 (155 download)
Download or read book Molecular Beam Epitaxy written by Robin F.C. Farrow and published by Elsevier. This book was released on 1995-12-31 with total page 795 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.
Author : Günter Weimann
Publisher : CRC Press
ISBN 13 : 9780750302951
Total Pages : 880 pages
Book Rating : 4.3/5 (29 download)
Download or read book Gallium Arsenide and Related Compounds 1993, Proceedings of the 20th INT Symposium, 29 August - 2 September 1993, Freiburg im Braunschweig, Germany written by Günter Weimann and published by CRC Press. This book was released on 1994-01-01 with total page 880 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.
Author : T.C. McGill
Publisher : Springer Science & Business Media
ISBN 13 : 146845661X
Total Pages : 338 pages
Book Rating : 4.4/5 (684 download)
Download or read book Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors written by T.C. McGill and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the Proceedings of the NATO Advanced Research Workshop on "Growth and Optical Properties of Wide Gap II-VI Low Dimensional Semiconductors", held from 2 - 6 August 1988 in Regensburg, Federal Republic of Germany, under the auspices of the NATO International Scientific Exchange Programme. Semiconducting compounds formed by combining an element from column II of the periodic table with an element from column VI (so called II-VI Semiconductors) have long promised many optoelectronic devices operating in the visible region of the spectrum. However, these materials have encountered numerous problems including: large number of defects and difficulties in obtaining p- and n-type doping. Advances in new methods of material preparation may hold the key to unlocking the unfulfilled promises. During the workshop a full session was taken up covering the prospects for wide-gap II-VI Semiconductor devices, particularly light emitting ones. The growth of bulk materials was reviewed with the view of considering II-VI substrates for the novel epitaxial techniques such as MOCVD, MBE, ALE, MOMBE and ALE-MBE. The controlled introduction of impurities during non-equilibrium growth to provide control of the doping type and conductivity was emphasized.
Author : John Wilfred Orton
Publisher :
ISBN 13 : 0199695822
Total Pages : 529 pages
Book Rating : 4.1/5 (996 download)
Download or read book Molecular Beam Epitaxy written by John Wilfred Orton and published by . This book was released on 2015 with total page 529 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early 'home-made' variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called 'low-dimensional structures' (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.
Author : Ashish K. Verma
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (273 download)
Download or read book Electrical Properties of Low Temperature GaAs Layers and Interfaces written by Ashish K. Verma and published by . This book was released on 1992 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 1038 pages
Book Rating : 4.:/5 (319 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 1038 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : L.L. Chang
Publisher : Springer Science & Business Media
ISBN 13 : 940095073X
Total Pages : 718 pages
Book Rating : 4.4/5 (9 download)
Download or read book Molecular Beam Epitaxy and Heterostructures written by L.L. Chang and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt: The NATO Advanced Study Institute on "Molecular Beam Epitaxy (MBE) and Heterostructures" was held at the Ettore Majorana Center for Scientific Culture, Erice, Italy, on March 7-19, 1983, the second course of the International School of Solid-State Device Re search. This volume contains the lectures presented at the Institute. Throughout the history of semiconductor development, the coupling between processing techniques and device structures for both scientific investigations and technological applications has time and again been demonstrated. Newly conceived ideas usually demand the ultimate in existing techniques, which often leads to process innova tions. The emergence of a process, on the other hand, invariably creates opportunities for device improvement and invention. This intimate relationship between the two has most recently been witnessed in MBE and heterostructures, the subject of this Institute. This volume is divided into several sections. Chapter 1 serves as an introduction by providing a perspective of the subject. This is followed by two sections, each containing four chapters, Chapters 2-5 addressing the principles of the MBE process and Chapters 6-9 describ ing its use in the growth of a variety of semiconductors and heteros tructures. The next two sections, Chapters to-II and Chapters 12-15, treat the theory and the electronic properties of the heterostructures, respectively. The focus is on energy quantization of the two dimensional electron system. Chapters 16-17 are devoted to device structures, including both field-effect transistors and lasers and detec tors.
Author : W. T. Lindley
Publisher : Institute of Physics Publishing (GB)
ISBN 13 :
Total Pages : 620 pages
Book Rating : 4.:/5 (45 download)
Download or read book Gallium Arsenide and Related Compounds 1986 written by W. T. Lindley and published by Institute of Physics Publishing (GB). This book was released on 1987 with total page 620 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Mehmet C. Öztürk
Publisher : The Electrochemical Society
ISBN 13 : 1566775507
Total Pages : 484 pages
Book Rating : 4.5/5 (667 download)
Download or read book Advanced Gate Stack, Source/drain and Channel Engineering for Si-based CMOS 3 written by Mehmet C. Öztürk and published by The Electrochemical Society. This book was released on 2007 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt: These proceedings describe processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Author : J.P. Hirtz
Publisher : Elsevier
ISBN 13 : 1483290425
Total Pages : 365 pages
Book Rating : 4.4/5 (832 download)
Download or read book Semiconductor Materials for Optoelectronics and LTMBE Materials written by J.P. Hirtz and published by Elsevier. This book was released on 2016-07-29 with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt: These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics. Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.
