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Electrical Properties Of Crystalline Boron
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Book Synopsis Electrical Properties of Crystalline Boron by : W. C. Shaw
Download or read book Electrical Properties of Crystalline Boron written by W. C. Shaw and published by . This book was released on 1953 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical Properties of Crystalline Boron by : W. C. Shaw
Download or read book Electrical Properties of Crystalline Boron written by W. C. Shaw and published by . This book was released on 1953 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Effects of Pressure on Electrical Properties of Crystalline Boron by : Onnig Hratch Bezirjian
Download or read book Effects of Pressure on Electrical Properties of Crystalline Boron written by Onnig Hratch Bezirjian and published by . This book was released on 1967 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Boron Synthesis, Structure, and Properties by : Jack Arnold Kohn
Download or read book Boron Synthesis, Structure, and Properties written by Jack Arnold Kohn and published by Springer. This book was released on 2013-12-01 with total page 201 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Boron written by Gerhart K. Gaulé and published by Springer. This book was released on 2013-11-27 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Properties of Boron by : Dean Nesbit Williams
Download or read book The Properties of Boron written by Dean Nesbit Williams and published by . This book was released on 1960 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Boron Arsenides by : David J. Fisher
Download or read book The Boron Arsenides written by David J. Fisher and published by Materials Research Forum LLC. This book was released on 2023-01-25 with total page 119 pages. Available in PDF, EPUB and Kindle. Book excerpt: Boron Arsenide offers very interesting electronic properties, as well as a high thermal conductivity; nearly 10 times higher than that of silicon. It has been hailed as ‘the best semiconductor material ever found’. The present book presents a detailed review of this material and its potential applications. The materials covered include Icosahedral Boron Arsenide, Hexagonal Boron Arsenide, Amorphous Boron Arsenide and Cubic Boron Arsenide. The book references 166 original resources with their direct web links for in-depth reading. Keywords: Boron Arsenides, Electron Mobility, Hole Mobility, Band-gap, Monolayers, Defects, Mechanical Properties, Photo-electrodes, Thermal Conductivity, Heat-spreading.
Book Synopsis The Effect of Boron Upon the Magnetic and Other Properties of Electrolytic Iron Melted in Vacuo by : Trygve Dewey Yensen
Download or read book The Effect of Boron Upon the Magnetic and Other Properties of Electrolytic Iron Melted in Vacuo written by Trygve Dewey Yensen and published by . This book was released on 1915 with total page 38 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characteristics and Applications of Boron by : Chatchawal Wongchoosuk
Download or read book Characteristics and Applications of Boron written by Chatchawal Wongchoosuk and published by BoD – Books on Demand. This book was released on 2022-10-26 with total page 229 pages. Available in PDF, EPUB and Kindle. Book excerpt: Boron is a chemical element with three valence electrons for forming covalent bonds, resulting in many compounds. Doping/integration of boron atoms into other atoms provides new wonder materials with unique physical, chemical, and electrical properties. This book provides an overview of the research and developments of boron-based materials such as boron nitride, boron clusters, boron doping, boron compounds, and so on. Chapters cover all aspects of boron-based materials including theoretical backgrounds of structure and properties, computer simulation, synthesis techniques, device fabrication, characterizations, and current state-of-the-art applications.
Book Synopsis Physical and Chemical Properties of Some Materials Used in the ANCO and Elemental Boron Processes by : E. J. Barber
Download or read book Physical and Chemical Properties of Some Materials Used in the ANCO and Elemental Boron Processes written by E. J. Barber and published by . This book was released on 1962 with total page 50 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical Properties of Boron Diffused Emitters by : Natalita Nursam
Download or read book Electrical Properties of Boron Diffused Emitters written by Natalita Nursam and published by . This book was released on 2010 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: The effective passivation of boron emitters is a critical precursor to the migration of the silicon solar cell industry to n-type substrates. With this requirement in mind, this thesis focuses upon the surface passivation quality of boron diffused emitters in crystalline silicon. The chief analytical approach applied involves the investigation of the dependence of surface recombination on the charge density. The investigation is undertaken on two structures, namely LPCVD Si3N4/SiO2/Si and PECVD SiNx/Si.
Download or read book BORON. written by John T. Milek and published by . This book was released on 1967 with total page 251 pages. Available in PDF, EPUB and Kindle. Book excerpt: A state-of-the-art survey and data sheet compilation on elemental boron is presented. The thorough literature search uncovered 304 references which were evaluated for information and data on the (1) reduction preparation methods, (2) zone-refining and melting techniques, (3) crystal structures, (4) electrical properties, (5) optical properties, (6) thermal and thermodynamic properties, (7) physical and chemical properties, (8) metallurgy and mechanical properties, (9) applications, (10) availability and suppliers. Major emphasis was the characterization of boron's semiconductive and acoustic properties with respect to potential semiconductor delay-line devices. Detailed information on the various methods of preparing pure boron and the resulting crystal structures plus properties are summarized in tables. (Author).
Book Synopsis Advanced Crystal Growth Techniques with III-V Boron Compound Semiconductors by : Clinton E. Whiteley
Download or read book Advanced Crystal Growth Techniques with III-V Boron Compound Semiconductors written by Clinton E. Whiteley and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconducting icosahedral boron arsenide, B[subscript]12As[subscript]2, is an excellent candidate for neutron detectors and radioisotope batteries, for which high quality single crystals are required. Thus, the present study was undertaken to grow B[subscript]12As[subscript]2 crystals by precipitation from metal solutions (nickel) saturated with elemental boron and arsenic in a sealed quartz ampoule. B[subscript]12As[subscript]2 crystals of 8-10 mm were produced when a homogeneous mixture of the three elements was held at 1150 °C for 48-72 hours and slowly cooled (3°C/hr). The crystals varied in color and transparency from black and opaque to clear and transparent. X-ray topography (XRT), Raman spectroscopy, and defect selective etching confirmed that the crystals had the expected rhombohedral structure and a low density of defects (5x10[superscript]7 cm[superscript]-2). The concentrations of residual impurities (nickel, carbon, etc) were found to be relatively high (10[superscript]19 cm[superscript]-3 for carbon) as measured by secondary ion mass spectrometry (SIMS) and elemental analysis by energy dispersive x-ray spectroscopy (EDS). The boron arsenide crystals were found to have favorable electrical properties ([Mu] = 24.5 cm[superscript]2 / Vs), but no interaction between a prototype detector and an alpha particle bombardment was observed. Thus, the flux growth method is viable for growing large B[subscript]12As[subscript]2 crystals, but the impurity concentrations remain a problem.
Book Synopsis The Preparation and Properties of Crystalline Boron ... by : Arthur Edward Newkirk
Download or read book The Preparation and Properties of Crystalline Boron ... written by Arthur Edward Newkirk and published by . This book was released on 1940 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical Properties of Some Single Crystal Dodecaborides by : Jyoti Burte
Download or read book Electrical Properties of Some Single Crystal Dodecaborides written by Jyoti Burte and published by . This book was released on 1976 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: PreVi011.3 ':i or~ : indicat e('. tk~t ho t~)rE's sed ~-Al B 12 1i~2, ~' a semiconductor. r:Toreove r , the s i mpl.(~ electronic t heory also indi cates that ~ -AIB1 2 should be a semico nductor, since thf're is one nonbonding e 'Le ctrofl per AlB12- uni t. JPor these reasons, we decided to measure t he electrical n ropert i ~ s of ~ -AlB1 2 single crystal s . Singl e crystal s of¥- AIB 12 ab ou t 1 x 1 r1n1 . size were grown from a copper mel t at 12500 C. The melt technique coupled. 1,vi th slow cooling vilas used because of i ts advantages such as : siTYInle set- up of the expe rimon t ; only e ;l.sil y available c hemi cals are required and it i s a c omparatively strair::bt forvvard y,le t hod still yielding crystal s big enouGh for OtU' purpose . Copper rms used as a solvent , i nst8ad of previOl.wly used aluminum , because it allows c.l.'ystal growth at hig he r t emneratures. HovlGver, the cry s tals of ] -AlB12 shm'red very hi gh res i s t ance a t r oom temperature . From our neasureJ'lents we conclude that the r esistivity of j3- Al B12 is, at least, given as ~ = 4. x 107 oblD .em •• Those results are inc ons i s t ent wi 'uh the ones .. reported by IIiss Khin fo r bot- pressed j3-AlB12 g i ven a s = 7600 ohm . em . or I e s s . ' Since tbe hot pressing was done at about 800 - ' 9000C i n ~ rap hi te moul ds 1,7i th 97% AlB12- p oVJder, vie thi nk there is pas s ib i 1 i ty th a.t lower borides or borot] carbide are , being formed, ':.Jhich are k11 own to be good semiconductors . v7e tried to ro-pe r-AlB12 by addi'J,'?: agents s uch as l:Ig , IG.-InO 4. ' HgS04 , KI12PO 4·' etc. to t he melt .. However , all these re age 11 t eel either reduced the yield and size of t lJe crystals or r;ave crystals of high r esis'can ce again. We think tba t molten copper keeps t he i mpurities off . There is also a pos s i bil i ty t hc:!,t these doping agents get oxidi~::;ed at '1 250°C • Hence, we co ~ clud e that J -AIB12 has v~ ry high r es i stance at r oom temperature . This was a l s o C011 - fi rmed by checki ng the siYlgle and. polycrystals of .~-AIB12 from Norton Co., Ontario and Cooper Nletallurgical Association. Boron carbide has been reported to be a semiconductor with ~ - 0.3 to 0.8 ohm . cm. for hotpres sed s araples. Boron carbide b e inq: struct urally related to ¥-AIB12 , we de cided to study the electrical prone rties of it~ Single crystals. These crystals were cut from a Single melt grovvn crystal a t Norton Co., Ontario. The resistivity of th," se crystal s was measured by the Van der Pam-v' s ~ nethod, which \vas very c onvenient fo r our crystal sha-pp.s. Some of the crystals showed resistivity ~ == 0.50 ob,Tn.cr] . i n agreement with the previously reported results . However , a few crystals showed lower resistivity e.g . 0 .13 and 0.20 ohm.cra • • The Hall mobility could .not be measured and th8reiore i s lower than 0 .16 em 2 v - 1 sec -1 • This is in agreement \vith t he re1)orted Hall mobility for pyrolytic boron . _ 2 -1 -1 carbide as 0.13 cm v sec • We also studied the orientation of the boron carbide crystals by the Jjaue-method. The inclination of c-axis with res pect to x-ray be81Il was det ermined . This was found to be 100 t o 20° f or normal resistivity sarnples (0.5 ohm . cm.) and 27 - 30° for t he lower r esistivity samples (0.1 ~5 to 0.20 ohm.cm .). This indica tes the possibility that th.e r es if.1tivity of B13C3 i s orientation dependent.
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1976 with total page 934 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: