Electrical Properties Of Boron Diffused Emitters

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Fundamentals of Semiconductor Processing Technology

Author : Badih El-Kareh
Publisher : Springer Science & Business Media
ISBN 13 : 1461522099
Total Pages : 605 pages
Book Rating : 4.4/5 (615 download)

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Book Synopsis Fundamentals of Semiconductor Processing Technology by : Badih El-Kareh

Download or read book Fundamentals of Semiconductor Processing Technology written by Badih El-Kareh and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 605 pages. Available in PDF, EPUB and Kindle. Book excerpt: The drive toward new semiconductor technologies is intricately related to market demands for cheaper, smaller, faster, and more reliable circuits with lower power consumption. The development of new processing tools and technologies is aimed at optimizing one or more of these requirements. This goal can, however, only be achieved by a concerted effort between scientists, engineers, technicians, and operators in research, development, and manufac turing. It is therefore important that experts in specific disciplines, such as device and circuit design, understand the principle, capabil ities, and limitations of tools and processing technologies. It is also important that those working on specific unit processes, such as lithography or hot processes, be familiar with other unit processes used to manufacture the product. Several excellent books have been published on the subject of process technologies. These texts, however, cover subjects in too much detail, or do not cover topics important to modem tech nologies. This book is written with the need for a "bridge" between different disciplines in mind. It is intended to present to engineers and scientists those parts of modem processing technologies that are of greatest importance to the design and manufacture of semi conductor circuits. The material is presented with sufficient detail to understand and analyze interactions between processing and other semiconductor disciplines, such as design of devices and cir cuits, their electrical parameters, reliability, and yield.

Research in Progress

Author :
Publisher :
ISBN 13 :
Total Pages : 652 pages
Book Rating : 4.:/5 (327 download)

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Book Synopsis Research in Progress by :

Download or read book Research in Progress written by and published by . This book was released on 1975 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Electronic Properties of Materials

Author : D.L. Grigsby
Publisher : Springer Science & Business Media
ISBN 13 : 1475708424
Total Pages : 1816 pages
Book Rating : 4.4/5 (757 download)

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Book Synopsis Electronic Properties of Materials by : D.L. Grigsby

Download or read book Electronic Properties of Materials written by D.L. Grigsby and published by Springer Science & Business Media. This book was released on 2013-11-21 with total page 1816 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Issues in Applied Physics: 2011 Edition

Author :
Publisher : ScholarlyEditions
ISBN 13 : 1464963371
Total Pages : 3912 pages
Book Rating : 4.4/5 (649 download)

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Book Synopsis Issues in Applied Physics: 2011 Edition by :

Download or read book Issues in Applied Physics: 2011 Edition written by and published by ScholarlyEditions. This book was released on 2012-01-09 with total page 3912 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues in Applied Physics / 2011 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about Applied Physics. The editors have built Issues in Applied Physics: 2011 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Applied Physics in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Issues in Applied Physics: 2011 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.

Selected Topics in Group IV and II-VI Semiconductors

Author : E.H.C. Parker
Publisher : Newnes
ISBN 13 : 0444596437
Total Pages : 465 pages
Book Rating : 4.4/5 (445 download)

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Book Synopsis Selected Topics in Group IV and II-VI Semiconductors by : E.H.C. Parker

Download or read book Selected Topics in Group IV and II-VI Semiconductors written by E.H.C. Parker and published by Newnes. This book was released on 2012-12-02 with total page 465 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the proceedings of two symposia which brought together crystal growers, chemists and physicists from across the world. The first part is concerned with silicon molecular beam epitaxy and presents an overview of the most research being done in the field. Part two discusses the problems dealing with purification, doping and defects of II-VI materials, mainly of the important semiconductors CdTe and ZnSe. The focus is on materials science issues which are the key for a better understanding of these materials and for any industrial application.

Nuclear Science Abstracts

Author :
Publisher :
ISBN 13 :
Total Pages : 1216 pages
Book Rating : 4.0/5 ( download)

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Book Synopsis Nuclear Science Abstracts by :

Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1976-06 with total page 1216 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Scientific and Technical Aerospace Reports

Author :
Publisher :
ISBN 13 :
Total Pages : 1370 pages
Book Rating : 4.:/5 (31 download)

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Book Synopsis Scientific and Technical Aerospace Reports by :

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1981 with total page 1370 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.

Reduced Thermal Processing for ULSI

Author : R.A. Levy
Publisher : Springer Science & Business Media
ISBN 13 : 1461305411
Total Pages : 444 pages
Book Rating : 4.4/5 (613 download)

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Book Synopsis Reduced Thermal Processing for ULSI by : R.A. Levy

Download or read book Reduced Thermal Processing for ULSI written by R.A. Levy and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt: As feature dimensions of integrated circuits shrink, the associated geometrical constraints on junction depth impose severe restrictions on the thermal budget for processing such devices. Furthermore, due to the relatively low melting point of the first aluminum metallization level, such restrictions extend to the fabrication of multilevel structures that are now essential in increasing packing density of interconnect lines. The fabrication of ultra large scale integrated (ULSI) devices under thermal budget restrictions requires the reassessment of existing and the development of new microelectronic materials and processes. This book addresses three broad but interrelated areas. The first area focuses on the subject of rapid thermal processing (RTP), a technology that allows minimization of processing time while relaxing the constraints on high temperature. Initially developed to limit dopant redistribution, current applications of RTP are shown here to encompass annealing, oxidation, nitridation, silicidation, glass reflow, and contact sintering. In a second but complementary area, advances in equipment design and performance of rapid thermal processing equipment are presented in conjunction with associated issues of temperature measurement and control. Defect mechanisms are assessed together with the resulting properties of rapidly deposited and processed films. The concept of RTP integration for a full CMOS device process is also examined together with its impact on device characteristics.

Diamond: Electronic Properties and Applications

Author : Lawrence S. Pan
Publisher : Springer Science & Business Media
ISBN 13 : 9780792395249
Total Pages : 498 pages
Book Rating : 4.3/5 (952 download)

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Book Synopsis Diamond: Electronic Properties and Applications by : Lawrence S. Pan

Download or read book Diamond: Electronic Properties and Applications written by Lawrence S. Pan and published by Springer Science & Business Media. This book was released on 1994-12-31 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: The use of diamond for electronic applications is not a new idea. As early as the 1920's diamonds were considered for their use as photoconductive detectors. However limitations in size and control of properties naturally limited the use of diamond to a few specialty applications. With the development of diamond synthesis from the vapor phase has come a more serious interest in developing diamond-based electronic devices. A unique combination of extreme properties makes diamond partiCularly well suited for high speed, high power, and high temperature applications. Vapor phase deposition of diamond allows large area films to be deposited, whose properties can potentially be controlled. Since the process of diamond synthesis was first realized, great progress have been made in understanding the issues important for growing diamond and fabricating electronic devices. The quality of both intrinsic and doped diamond has improved greatly to the point that viable applications are being developed. Our understanding of the properties and limitations has also improved greatly. While a number of excellent references review the general properties of diamond, this volume summarizes the great deal of literature related only to electronic properties and applications of diamond. We concentrate only on diamond; related materials such as diamond-like carbon (DLC) and other wide bandgap semiconductors are not treated here. In the first chapter Profs. C. Y. Fong and B. M. Klein discuss the band structure of single-crystal diamond and its relation to electronic properties.

Circuits at the Nanoscale

Author : Krzysztof Iniewski
Publisher : CRC Press
ISBN 13 : 1351834657
Total Pages : 669 pages
Book Rating : 4.3/5 (518 download)

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Book Synopsis Circuits at the Nanoscale by : Krzysztof Iniewski

Download or read book Circuits at the Nanoscale written by Krzysztof Iniewski and published by CRC Press. This book was released on 2018-10-08 with total page 669 pages. Available in PDF, EPUB and Kindle. Book excerpt: Circuits for Emerging Technologies Beyond CMOS New exciting opportunities are abounding in the field of body area networks, wireless communications, data networking, and optical imaging. In response to these developments, top-notch international experts in industry and academia present Circuits at the Nanoscale: Communications, Imaging, and Sensing. This volume, unique in both its scope and its focus, addresses the state-of-the-art in integrated circuit design in the context of emerging systems. A must for anyone serious about circuit design for future technologies, this book discusses emerging materials that can take system performance beyond standard CMOS. These include Silicon on Insulator (SOI), Silicon Germanium (SiGe), and Indium Phosphide (InP). Three-dimensional CMOS integration and co-integration with Microelectromechanical (MEMS) technology and radiation sensors are described as well. Topics in the book are divided into comprehensive sections on emerging design techniques, mixed-signal CMOS circuits, circuits for communications, and circuits for imaging and sensing. Dr. Krzysztof Iniewski is a director at CMOS Emerging Technologies, Inc., a consulting company in Vancouver, British Columbia. His current research interests are in VLSI ciruits for medical applications. He has published over 100 research papers in international journals and conferences, and he holds 18 international patents granted in the United States, Canada, France, Germany, and Japan. In this volume, he has assembled the contributions of over 60 world-reknown experts who are at the top of their field in the world of circuit design, advancing the bank of knowledge for all who work in this exciting and burgeoning area.

U.S. Government Research Reports

Author :
Publisher :
ISBN 13 :
Total Pages : 418 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis U.S. Government Research Reports by :

Download or read book U.S. Government Research Reports written by and published by . This book was released on 1962-07 with total page 418 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Advanced Silicon Materials for Photovoltaic Applications

Author : Sergio Pizzini
Publisher : John Wiley & Sons
ISBN 13 : 1118312163
Total Pages : 412 pages
Book Rating : 4.1/5 (183 download)

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Book Synopsis Advanced Silicon Materials for Photovoltaic Applications by : Sergio Pizzini

Download or read book Advanced Silicon Materials for Photovoltaic Applications written by Sergio Pizzini and published by John Wiley & Sons. This book was released on 2012-06-07 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt: Today, the silicon feedstock for photovoltaic cells comes from processes which were originally developed for the microelectronic industry. It covers almost 90% of the photovoltaic market, with mass production volume at least one order of magnitude larger than those devoted to microelectronics. However, it is hard to imagine that this kind of feedstock (extremely pure but heavily penalized by its high energy cost) could remain the only source of silicon for a photovoltaic market which is in continuous expansion, and which has a cumulative growth rate in excess of 30% in the last few years. Even though reports suggest that the silicon share will slowly decrease in the next twenty years, finding a way to manufacture a specific solar grade feedstock in large quantities, at a low cost while maintaining the quality needed, still remains a crucial issue. Thin film and quantum confinement-based silicon cells might be a complementary solution. Advanced Silicon Materials for Photovoltaic Applications has been designed to describe the full potentialities of silicon as a multipurpose material and covers: Physical, chemical and structural properties of silicon Production routes including the promise of low cost feedstock for PV applications Defect engineering and the role of impurities and defects Characterization techniques, and advanced analytical techniques for metallic and non-metallic impurities Thin film silicon and thin film solar cells Innovative quantum effects, and 3rd generation solar cells With contributions from internationally recognized authorities, this book gives a comprehensive analysis of the state-of-the-art of process technologies and material properties, essential for anyone interested in the application and development of photovoltaics.

Solar Energy Update

Author :
Publisher :
ISBN 13 :
Total Pages : 248 pages
Book Rating : 4.3/5 ( download)

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Download or read book Solar Energy Update written by and published by . This book was released on 1984-10 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon

Author : Peter Pichler
Publisher : Springer Science & Business Media
ISBN 13 : 3709105978
Total Pages : 576 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon by : Peter Pichler

Download or read book Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.

Nanoscaled Semiconductor-on-Insulator Structures and Devices

Author : S. Hall
Publisher : Springer Science & Business Media
ISBN 13 : 1402063784
Total Pages : 377 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Nanoscaled Semiconductor-on-Insulator Structures and Devices by : S. Hall

Download or read book Nanoscaled Semiconductor-on-Insulator Structures and Devices written by S. Hall and published by Springer Science & Business Media. This book was released on 2007-07-09 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book offers combined views on silicon-on-insulator (SOI) nanoscaled electronics from experts in the fields of materials science, device physics, electrical characterization and computer simulation. Coverage analyzes prospects of SOI nanoelectronics beyond Moore’s law and explains fundamental limits for CMOS, SOICMOS and single electron technologies.

Micro- and Nanoelectronics

Author : Tomasz Brozek
Publisher : CRC Press
ISBN 13 : 1482214911
Total Pages : 383 pages
Book Rating : 4.4/5 (822 download)

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Book Synopsis Micro- and Nanoelectronics by : Tomasz Brozek

Download or read book Micro- and Nanoelectronics written by Tomasz Brozek and published by CRC Press. This book was released on 2017-12-19 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: Micro- and Nanoelectronics: Emerging Device Challenges and Solutions presents a comprehensive overview of the current state of the art of micro- and nanoelectronics, covering the field from fundamental science and material properties to novel ways of making nanodevices. Containing contributions from experts in both industry and academia, this cutting-edge text: Discusses emerging silicon devices for CMOS technologies, fully depleted device architectures, characteristics, and scaling Explains the specifics of silicon compound devices (SiGe, SiC) and their unique properties Explores various options for post-CMOS nanoelectronics, such as spintronic devices and nanoionic switches Describes the latest developments in carbon nanotubes, iii-v devices structures, and more Micro- and Nanoelectronics: Emerging Device Challenges and Solutions provides an excellent representation of a complex engineering field, examining emerging materials and device architecture alternatives with the potential to shape the future of nanotechnology.

Ion Implantation in Semiconductors

Author : Susumu Namba
Publisher : Springer Science & Business Media
ISBN 13 : 1468421514
Total Pages : 716 pages
Book Rating : 4.4/5 (684 download)

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Book Synopsis Ion Implantation in Semiconductors by : Susumu Namba

Download or read book Ion Implantation in Semiconductors written by Susumu Namba and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This use of ion implantation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Partenkirchen, Germany, in 1971. At the third conference, which convened at Yorktown Heights, New York in 1973, the emphasis was broadened to include metals and insulators as well as semiconductors. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974. A huge number of papers had been submitted to this conference. All papers which were presented at the Fourth International Conference on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I wish to thank the authors for their excellent papers and the sponsors for their financial support. The International Committee responsible for advising this conference consisted of B.L. Crowder, J.A. Davies, G. Dearna1ey, F.H. Eisen, Ph. G1otin, T. Itoh, A.U. MacRae, J.W. Mayer, S. Namba, I. Ruge, and F.L. Vook.