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Electrical Modeling Of Through Silicon Vias For 3d Integrated Circuits Considering Non Linear Effects
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Book Synopsis Electrical Modeling of Through Silicon Vias for 3D Integrated Circuits Considering Non Linear Effects by : Stefano Piersanti
Download or read book Electrical Modeling of Through Silicon Vias for 3D Integrated Circuits Considering Non Linear Effects written by Stefano Piersanti and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Arbitrary Modeling of TSVs for 3D Integrated Circuits by : Khaled Salah
Download or read book Arbitrary Modeling of TSVs for 3D Integrated Circuits written by Khaled Salah and published by Springer. This book was released on 2014-08-21 with total page 181 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents a wide-band and technology independent, SPICE-compatible RLC model for through-silicon vias (TSVs) in 3D integrated circuits. This model accounts for a variety of effects, including skin effect, depletion capacitance and nearby contact effects. Readers will benefit from in-depth coverage of concepts and technology such as 3D integration, Macro modeling, dimensional analysis and compact modeling, as well as closed form equations for the through silicon via parasitics. Concepts covered are demonstrated by using TSVs in applications such as a spiral inductor and inductive-based communication system and bandpass filtering.
Book Synopsis Physical Design for 3D Integrated Circuits by : Aida Todri-Sanial
Download or read book Physical Design for 3D Integrated Circuits written by Aida Todri-Sanial and published by CRC Press. This book was released on 2017-12-19 with total page 397 pages. Available in PDF, EPUB and Kindle. Book excerpt: Physical Design for 3D Integrated Circuits reveals how to effectively and optimally design 3D integrated circuits (ICs). It also analyzes the design tools for 3D circuits while exploiting the benefits of 3D technology. The book begins by offering an overview of physical design challenges with respect to conventional 2D circuits, and then each chapter delivers an in-depth look at a specific physical design topic. This comprehensive reference: Contains extensive coverage of the physical design of 2.5D/3D ICs and monolithic 3D ICs Supplies state-of-the-art solutions for challenges unique to 3D circuit design Features contributions from renowned experts in their respective fields Physical Design for 3D Integrated Circuits provides a single, convenient source of cutting-edge information for those pursuing 2.5D/3D technology.
Book Synopsis Electrical Design of Through Silicon Via by : Manho Lee
Download or read book Electrical Design of Through Silicon Via written by Manho Lee and published by Springer. This book was released on 2014-05-11 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: Through Silicon Via (TSV) is a key technology for realizing three-dimensional integrated circuits (3D ICs) for future high-performance and low-power systems with small form factors. This book covers both qualitative and quantitative approaches to give insights of modeling TSV in a various viewpoints such as signal integrity, power integrity and thermal integrity. Most of the analysis in this book includes simulations, numerical modelings and measurements for verification. The author and co-authors in each chapter have studied deep into TSV for many years and the accumulated technical know-hows and tips for related subjects are comprehensively covered.
Book Synopsis Stress Management for 3D ICS Using Through Silicon Vias: by : Ehrenfried Zschech
Download or read book Stress Management for 3D ICS Using Through Silicon Vias: written by Ehrenfried Zschech and published by American Institute of Physics. This book was released on 2011-11-23 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Scientist and engineers as well as graduate students in the fields of This conference will be of interest to anyone involved in Physics, Electrical Engineering, Materials Science and Engineering, Reliability and Quality Management, both in industry and academia. One current challenge to micro- and nanoelectronics is the understanding of stress-related phenomena in 3D IC integration. Stresses arising in 3D TSV interconnects and in the surrounding materials due to thermal mismatch, microstructure changes or process integration can lead to performance reduction, reliability-limiting degradation and failure of microelectronic products. Understanding stress-related phenomena in new materials used for 3D integration and packaging, particularly using through silicon vias and microbumps, is critical for future microelectronic products. Management of mechanical stress is one of the key enablers for the successful implementation of 3D-integrated circuits using through silicon vias (TSVs). The potential stress-related impact of the 3D integration process on the device characteristics must be understood and shared, and designers need a solution for managing stress. The Proceedings summarize new research results and advances in basic understanding of stress-induced phenomena in 3D IC integration. Modelling and simulation capabilities as well as materials characterization are demonstrated to evaluate the effect of stress on product performance.
Book Synopsis Electrical Modeling and Design for 3D System Integration by : Er-Ping Li
Download or read book Electrical Modeling and Design for 3D System Integration written by Er-Ping Li and published by John Wiley & Sons. This book was released on 2012-04-10 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: New advanced modeling methods for simulating the electromagnetic properties of complex three-dimensional electronic systems Based on the author's extensive research, this book sets forth tested and proven electromagnetic modeling and simulation methods for analyzing signal and power integrity as well as electromagnetic interference in large complex electronic interconnects, multilayered package structures, integrated circuits, and printed circuit boards. Readers will discover the state of the technology in electronic package integration and printed circuit board simulation and modeling. In addition to popular full-wave electromagnetic computational methods, the book presents new, more sophisticated modeling methods, offering readers the most advanced tools for analyzing and designing large complex electronic structures. Electrical Modeling and Design for 3D System Integration begins with a comprehensive review of current modeling and simulation methods for signal integrity, power integrity, and electromagnetic compatibility. Next, the book guides readers through: The macromodeling technique used in the electrical and electromagnetic modeling and simulation of complex interconnects in three-dimensional integrated systems The semi-analytical scattering matrix method based on the N-body scattering theory for modeling of three-dimensional electronic package and multilayered printed circuit boards with multiple vias Two- and three-dimensional integral equation methods for the analysis of power distribution networks in three-dimensional package integrations The physics-based algorithm for extracting the equivalent circuit of a complex power distribution network in three-dimensional integrated systems and printed circuit boards An equivalent circuit model of through-silicon vias Metal-oxide-semiconductor capacitance effects of through-silicon vias Engineers, researchers, and students can turn to this book for the latest techniques and methods for the electrical modeling and design of electronic packaging, three-dimensional electronic integration, integrated circuits, and printed circuit boards.
Book Synopsis Modeling, Analysis, Design, and Tests for Electronics Packaging beyond Moore by : Hengyun Zhang
Download or read book Modeling, Analysis, Design, and Tests for Electronics Packaging beyond Moore written by Hengyun Zhang and published by Woodhead Publishing. This book was released on 2019-11-14 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modeling, Analysis, Design and Testing for Electronics Packaging Beyond Moore provides an overview of electrical, thermal and thermomechanical modeling, analysis, design and testing for 2.5D/3D. The book addresses important topics, including electrically and thermally induced issues, such as EMI and thermal issues, which are crucial to package signal and thermal integrity. It also covers modeling methods to address thermomechanical stress related to the package structural integrity. In addition, practical design and test techniques for packages and systems are included. Includes advanced modeling and analysis methods and techniques for state-of-the art electronics packaging Features experimental characterization and qualifications for the analysis and verification of electronic packaging design Provides multiphysics modeling and analysis techniques of electronic packaging
Book Synopsis Design and Modeling for 3D ICs and Interposers by : Madhavan Swaminathan
Download or read book Design and Modeling for 3D ICs and Interposers written by Madhavan Swaminathan and published by World Scientific. This book was released on 2013-11-05 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: 3D Integration is being touted as the next semiconductor revolution. This book provides a comprehensive coverage on the design and modeling aspects of 3D integration, in particularly, focus on its electrical behavior. Looking from the perspective the Silicon Via (TSV) and Glass Via (TGV) technology, the book introduces 3DICs and Interposers as a technology, and presents its application in numerical modeling, signal integrity, power integrity and thermal integrity. The authors underscored the potential of this technology in design exchange formats and power distribution.
Book Synopsis Through-silicon-via-aware Prediction and Physical Design for Multi-granularity 3D Integrated Circuits by : Dae Hyun Kim
Download or read book Through-silicon-via-aware Prediction and Physical Design for Multi-granularity 3D Integrated Circuits written by Dae Hyun Kim and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The main objective of this research is to predict the wirelength, area, delay, and power of multi-granularity three-dimensional integrated circuits (3D ICs), to develop physical design methodologies and algorithms for the design of multi-granularity 3D ICs, and to investigate the impact of through-silicon vias (TSVs) on the quality of 3D ICs. This dissertation supports these objectives by addressing six research topics. The first pertains to analytical models that predict the interconnects of multi-granularity 3D ICs, and the second focuses on the development of analytical models of the capacitive coupling of TSVs. The third and the fourth topics present design methodologies and algorithms for the design of gate- and block-level 3D ICs, and the fifth topic pertains to the impact of TSVs on the quality of 3D ICs. The final topic addresses topography variation in 3D ICs. The first section of this dissertation presents TSV-aware interconnect prediction models for multi-granularity 3D ICs. As previous interconnect prediction models for 3D ICs did not take TSV area into account, they were not capable of predicting many important characteristics of 3D ICs related to TSVs. This section will present several previous interconnect prediction models that have been improved so that the area occupied by TSVs is taken into account. The new models show numerous important predictions such as the existence of the number of TSVs minimizing wirelength. The second section presents fast estimation of capacitive coupling of TSVs and wires. Since TSV-to-TSV and TSV-to-wire coupling capacitance is dependent on their relative locations, fast estimation of the coupling capacitance of a TSV is essential for the timing optimization of 3D ICs. Simulation results show that the analytical models presented in this section are sufficiently accurate for use at various design steps that require the computation of TSV capacitance. The third and fourth sections present design methodologies and algorithms for gate- and block-level 3D ICs. One of the biggest differences in the design of 2D and 3D ICs is that the latter requires TSV insertion. Since no widely-accepted design methodology designates when, where, and how TSVs are inserted, this work develops and presents several design methodologies for gate- and block-level 3D ICs and physical design algorithms supporting them. Simulation results based on GDSII-level layouts validate the design methodologies and present evidence of their effectiveness. The fifth section explores the impact of TSVs on the quality of 3D ICs. As TSVs become smaller, devices are shrinking, too. Since the relative size of TSVs and devices is more critical to the quality of 3D ICs than the absolute size of TSVs and devices, TSVs and devices should be taken into account in the study of the impact of TSVs on the quality of 3D ICs. In this section, current and future TSVs and devices are combined to produce 3D IC layouts and the impact of TSVs on the quality of 3D ICs is investigated. The final section investigates topography variation in 3D ICs. Since landing pads fabricated in the bottommost metal layer are attached to TSVs, they are larger than TSVs, so they could result in serious topography variation. Therefore, topography variation, especially in the bottommost metal layer, is investigated and two layout optimization techniques are applied to a global placement algorithm that minimizes the topography variation of the bottommost metal layer of 3D ICs.
Book Synopsis Design for High Performance, Low Power, and Reliable 3D Integrated Circuits by : Sung Kyu Lim
Download or read book Design for High Performance, Low Power, and Reliable 3D Integrated Circuits written by Sung Kyu Lim and published by Springer Science & Business Media. This book was released on 2012-11-27 with total page 573 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with a variety of algorithms and software tools, dedicated to the physical design of through-silicon-via (TSV) based, three-dimensional integrated circuits. It describes numerous “manufacturing-ready” GDSII-level layouts of TSV-based 3D ICs developed with the tools covered in the book. This book will also feature sign-off level analysis of timing, power, signal integrity, and thermal analysis for 3D IC designs. Full details of the related algorithms will be provided so that the readers will be able not only to grasp the core mechanics of the physical design tools, but also to be able to reproduce and improve upon the results themselves. This book will also offer various design-for-manufacturability (DFM), design-for-reliability (DFR), and design-for-testability (DFT) techniques that are considered critical to the physical design process.
Book Synopsis Designing TSVs for 3D Integrated Circuits by : Nauman Khan
Download or read book Designing TSVs for 3D Integrated Circuits written by Nauman Khan and published by Springer Science & Business Media. This book was released on 2012-09-22 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explores the challenges and presents best strategies for designing Through-Silicon Vias (TSVs) for 3D integrated circuits. It describes a novel technique to mitigate TSV-induced noise, the GND Plug, which is superior to others adapted from 2-D planar technologies, such as a backside ground plane and traditional substrate contacts. The book also investigates, in the form of a comparative study, the impact of TSV size and granularity, spacing of C4 connectors, off-chip power delivery network, shared and dedicated TSVs, and coaxial TSVs on the quality of power delivery in 3-D ICs. The authors provide detailed best design practices for designing 3-D power delivery networks. Since TSVs occupy silicon real-estate and impact device density, this book provides four iterative algorithms to minimize the number of TSVs in a power delivery network. Unlike other existing methods, these algorithms can be applied in early design stages when only functional block- level behaviors and a floorplan are available. Finally, the authors explore the use of Carbon Nanotubes for power grid design as a futuristic alternative to Copper.
Book Synopsis Microstructure and Processing Effects on Stress and Reliability for Through-silicon Vias (TSVs) in 3D Integrated Circuits by : Tengfei Jiang
Download or read book Microstructure and Processing Effects on Stress and Reliability for Through-silicon Vias (TSVs) in 3D Integrated Circuits written by Tengfei Jiang and published by . This book was released on 2015 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Copper (Cu) Through-silicon via (TSV) is a key enabling element that provides the vertical connection between stacked dies in three-dimensional (3D) integration. The thermal expansion mismatch between Cu and Si induces complex stresses in and around the TSV structures, which can degrade the performance and reliability of 3DICs and are key concerns for technology development. In this dissertation, the effects of Cu microstructure and processing conditions on the stress characteristics and reliability of the TSV structure are studied. First, the stress characteristics of Cu TSV structures are investigated using the substrate curvature method. The substrate curvature measurement was supplemented by microstructure and finite element analyses (FEA) to investigate the mechanisms for the linear and nonlinear stress-temperature behaviors observed for the TSV structure. Implications of the near surface stress on carrier mobility change and device keep-out zone (KOZ) are discussed. Second, via extrusion, an important yield and reliability issue for 3D integration, is analyzed. Synchrotron x-ray microdiffraction technique was introduced for direct measurements of local stress and material behaviors in and around the TSV. Local plasticity near the top of the via was observed which provided direct experimental evidence to support the plasticity mechanism of via extrusion. An analytical model and FEA were used to analyze via extrusion based on local plasticity. Next, the effect of Cu microstructure effect on the thermomechanical behaviors of TSVs is investigated. The contribution from grain boundary and interfacial diffusion on via extrusion and the relaxation mechanisms are discussed. Potential approaches to minimize via extrusion are proposed. Finally, the stress characteristics of 3D die stack structures are studied using synchrotron x-ray microdiffraction. High resolution stress mappings were performed and verified by finite element analysis (FEA). FEA was further developed to estimate the stress effect on device mobility changes and the warpage of the integrated structure.
Book Synopsis Placement for Fast and Reliable Through-silicon-via (TSV) Based 3D-IC Layouts by : Krit Athikulwongse
Download or read book Placement for Fast and Reliable Through-silicon-via (TSV) Based 3D-IC Layouts written by Krit Athikulwongse and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this research is to explore the feasibility of addressing the major performance and reliability problems or issues, such as wirelength, stress-induced carrier mobility variation, temperature, and quality trade-offs, found in three-dimensional integrated circuits (3D ICs) that use through-silicon vias (TSVs) at placement stage. Four main works that support this goal are included. In the first work, wirelength of TSV-based 3D ICs is the main focus. In the second work, stress-induced carrier mobility variation in TSV-based 3D ICs is examined. In the third work, temperature inside TSV-based 3D ICs is investigated. In the final work, the quality trade-offs of TSV-based 3D-IC designs are explored. In the first work, a force-directed, 3D, and gate-level placement algorithm that efficiently handles TSVs is developed. The experiments based on synthesized benchmarks indicate that the developed algorithm helps generate GDSII layouts of 3D-IC designs that are optimized in terms of wirelength. In addition, the impact of TSVs on other physical aspects of 3D-IC designs is also studied by analyzing the GDSII layouts. In the second work, the model for carrier mobility variation caused by TSV and STI stresses is developed as well as the timing analysis flow considering the stresses. The impact of TSV and STI stresses on carrier mobility variation and performance of 3D ICs is studied. Furthermore, a TSV-stress-driven, force-directed, and 3D placement algorithm is developed. It exploits carrier mobility variation, caused by stress around TSVs after fabrication, to improve the timing and area objectives during placement. In addition, the impact of keep-out zone (KOZ) around TSVs on stress, carrier mobility variation, area, wirelength, and performance of 3D ICs is studied. In the third work, two temperature-aware global placement algorithms are developed. They exploit die-to-die thermal coupling in 3D ICs to improve temperature during placement. In addition, a framework used to evaluate the results from temperature-aware global placements is developed. The main component of the framework is a GDSII-level thermal analysis that considers all structures inside a TSV-based 3D IC while computing temperature. The developed placers are compared with several state-of-the-art placers published in recent literature. The experimental results indicate that the developed algorithms help improve the temperature of 3D ICs effectively. In the final work, three block-level design styles for TSV-based die-to-wafer bonded 3D ICs are discussed. Several 3D-IC layouts in the three styles are manually designed. The main difference among these layouts is the position of TSVs. Finally, the area, wirelength, timing, power, temperature, and mechanical stress of all layouts are compared to explore the trade-offs of layout quality.
Book Synopsis More than Moore Technologies for Next Generation Computer Design by : Rasit O. Topaloglu
Download or read book More than Moore Technologies for Next Generation Computer Design written by Rasit O. Topaloglu and published by Springer. This book was released on 2015-02-09 with total page 225 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive overview of key technologies being used to address challenges raised by continued device scaling and the extending gap between memory and central processing unit performance. Authors discuss in detail what are known commonly as “More than Moore” (MtM), technologies, which add value to devices by incorporating functionalities that do not necessarily scale according to “Moore's Law”. Coverage focuses on three key technologies needed for efficient power management and cost per performance: novel memories, 3D integration and photonic on-chip interconnect.
Book Synopsis Electromagnetic Modeling and Optimization of Through Silicon Vias by : David Dahl
Download or read book Electromagnetic Modeling and Optimization of Through Silicon Vias written by David Dahl and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Three-Dimensional Integrated Circuit Design by : Yuan Xie
Download or read book Three-Dimensional Integrated Circuit Design written by Yuan Xie and published by Springer. This book was released on 2012-05-03 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: We live in a time of great change. In the electronics world, the last several decades have seen unprecedented growth and advancement, described by Moore’s law. This observation stated that transistor density in integrated circuits doubles every 1. 5–2 years. This came with the simultaneous improvement of individual device perf- mance as well as the reduction of device power such that the total power of the resulting ICs remained under control. No trend remains constant forever, and this is unfortunately the case with Moore’s law. The trouble began a number of years ago when CMOS devices were no longer able to proceed along the classical scaling trends. Key device parameters such as gate oxide thickness were simply no longer able to scale. As a result, device o- state currents began to creep up at an alarming rate. These continuing problems with classical scaling have led to a leveling off of IC clock speeds to the range of several GHz. Of course, chips can be clocked higher but the thermal issues become unmanageable. This has led to the recent trend toward microprocessors with mul- ple cores, each running at a few GHz at the most. The goal is to continue improving performance via parallelism by adding more and more cores instead of increasing speed. The challenge here is to ensure that general purpose codes can be ef?ciently parallelized. There is another potential solution to the problem of how to improve CMOS technology performance: three-dimensional integrated circuits (3D ICs).
Book Synopsis Thermo-mechanical Reliability of Micro-interconnects in Three-dimensional Integrated Circuits by : Omar Rodriguez
Download or read book Thermo-mechanical Reliability of Micro-interconnects in Three-dimensional Integrated Circuits written by Omar Rodriguez and published by . This book was released on 2010 with total page 75 pages. Available in PDF, EPUB and Kindle. Book excerpt: Three-dimensional integrated circuits (3D ICs) have been designed with the purpose of achieving higher communication speed by reducing the interconnect length between integrated circuits, and integrating heterogeneous functions into one single package, among other advantages. As a growing, new technology, researchers are still studying the different parameters that impact the overall lifetime of such packages in order to ensure the customer receives reliable end products. This study focused on the effect of four design parameters on the lifetime of the interconnects and, in particular, solder balls and through-silicon vias (TSVs). These parameters included TSV pitch, TSV diameter, underfill stiffness and underfill thickness. A three-dimensional finite element model of a 3D IC package was built in ANSYS to analyze the effect of these parameters under thermo-mechanical cyclic loading. The stresses and damage in the interconnects of the IC were evaluated using Coffin-Manson and the energy partitioning fatigue damage models. A three-level Taguchi design of experiment method was utilized to evaluate the effect of each parameter. Minitab software was used to assess the main effects of the selected design parameters. Locations of maximum stresses and possible damage initiation were discussed, and recommendations were made to the manufacturer for package optimization. Due to the very small scale of the interconnects, conducting mechanical tests and measuring strains in small microscopic scale material is very complicated and challenging; therefore, it is very difficult to validate finite element and analytical analysis of stress and strain in microelectronic devices. At the next step of this work, a new device and method were proposed to facilitate testing and strain measurements of material at microscopic scale. This new micro-electromechanical system (MEMS) consisted of two piezoelectric members that were constrained by a rigid frame and that sandwiched the test material. These two piezoelectric members act as load cell and strain measurement sensors. As the voltage is applied to the first member, it induces a force to the specimen and deforms it, which in turn deforms the second piezoelectric member. The second piezoelectric member induces an output voltage that is proportional to its deformation. Therefore, the strain and stresses in the test material can be determined by knowing the mechanical characteristics of the piezoelectric members. Advantages of the proposed system include ease of use, particularly at microscopic scale, adaptability to measure the strain of different materials, and flexibility to measure the modulus of elasticity for an unknown material. An analytical analysis of the device and method was presented, and the finite element simulation of the device was accomplished. The results were compared and discussed. An inelastic specimen was also analyzed and sensitivity of the device to detecting nonlinear behavior was evaluated. A characteristic curve was developed for the specific geometry and piezoelectric material.
