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Electrical Characterisation Of Schottky Barrier Diodes Fabricated On Gaas By Electron Beam Metallisation
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Book Synopsis Electrical Characterisation of Schottky Barrier Diodes Fabricated on GaAs by Electron Beam Metallisation by : Enoch Mpho Sithole
Download or read book Electrical Characterisation of Schottky Barrier Diodes Fabricated on GaAs by Electron Beam Metallisation written by Enoch Mpho Sithole and published by . This book was released on 2001 with total page 125 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Metal-Semiconductor Schottky Barrier Junctions and Their Applications by : B.L. Sharma
Download or read book Metal-Semiconductor Schottky Barrier Junctions and Their Applications written by B.L. Sharma and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present-day semiconductor technology would be inconceivable without extensive use of Schottky barrier junctions. In spite of an excellent book by Professor E.H. Rhoderick (1978) dealing with the basic principles of metal semiconductor contacts and a few recent review articles, the need for a monograph on "Metal-Semiconductor Schottky Barrier Junctions and Their Applications" has long been felt by students, researchers, and technologists. It was in this context that the idea of publishing such a monograph by Mr. Ellis H. Rosenberg, Senior Editor, Plenum Publishing Corporation, was considered very timely. Due to the numerous and varied applications of Schottky barrier junctions, the task of bringing it out, however, looked difficult in the beginning. After discussions at various levels, it was deemed appropriate to include only those typical applications which were extremely rich in R&D and still posed many challenges so that it could be brought out in the stipulated time frame. Keeping in view the larger interest, it was also considered necessary to have the different topics of Schottky barrier junctions written by experts.
Book Synopsis Finite Element Analysis and Electron Beam Lithographic Fabrication of Gallium Arsenide Schottky Barrier Diodes with Sub-micron Features by : J. B. Langley
Download or read book Finite Element Analysis and Electron Beam Lithographic Fabrication of Gallium Arsenide Schottky Barrier Diodes with Sub-micron Features written by J. B. Langley and published by . This book was released on 1980 with total page 93 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fabrication of GaAs Devices by : Albert G. Baca
Download or read book Fabrication of GaAs Devices written by Albert G. Baca and published by IET. This book was released on 2005-09 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.
Book Synopsis advances in microwaves and lightwaves by :
Download or read book advances in microwaves and lightwaves written by and published by Allied Publishers. This book was released on with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Analytical Techniques for the Characterization of Compound Semiconductors by : G. Bastard
Download or read book Analytical Techniques for the Characterization of Compound Semiconductors written by G. Bastard and published by Elsevier. This book was released on 1991-07-26 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the III-V and III-VI families. The papers in this volume will provide a useful reference on the implications of new technologies in the characterization of compound semiconductors.
Book Synopsis Electrical Characterization of GaN and SiC Schottky Diodes and Non Mechanical Beam Steering Using Liquid Crystals by : Kandhar Kurhade
Download or read book Electrical Characterization of GaN and SiC Schottky Diodes and Non Mechanical Beam Steering Using Liquid Crystals written by Kandhar Kurhade and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In this thesis we investigated the electrical characteristics of GaN schottky diodes fabricated on a commercial LED wafer using Inductively Coupled Plasma Reactive Ion etching (ICP-RIE) techniques. We also researched the characteristics of commercially available SiC schottky diodes. Two main electrical characterization techniques were used in the investigation of these diodes, Current - Voltage Characterization and Capacitance - Voltage Characterization. Using I-V characteristics the ideality and the Barrier height of the Schottky diode was determined and the C-V characteristics were used to calculate the doping concentration of the device. These measurements were done at room temperature as well as different temperatures ranging from 100K to 300K for GaN diodes and 133K to 433K for SiC diodes to observe the dependence of Barrier height and the Ideality factor on the temperature. It was concluded that for GaN the ideality factor decreases with the increase in temperature while the barrier height increases with increase in temperature. The values of barrier height for GaN at 120K is 0.44eV and at 300K it is 0.81eV and the ideality factor at 120K is 0.96 and at 300K it is 0.6. The carrier concentration of the SiC remains constant through the three regions while the carrier concentration of GaN device increases as the reverse bias increases. GaN diode was also measured at two different frequencies to observe if there is any change in the C-V profile and the profile was similar for the two frequencies.Further this thesis comprises of a small novel device which is in the process of fabrication. It is a non-mechanical beam steerer which makes use of Liquid crystals to deviate a beam from its normal position. This thesis only includes the architecture used in the manufacturing of the device and the fabrication of a liquid crystal cell.
Book Synopsis Schottky Barrier Diodes for Electron Beam Semiconductor Applications by : Wieslaw W. Siekanowicz
Download or read book Schottky Barrier Diodes for Electron Beam Semiconductor Applications written by Wieslaw W. Siekanowicz and published by . This book was released on 1972 with total page 91 pages. Available in PDF, EPUB and Kindle. Book excerpt: Experimental and theoretical studies show that the current-gain and frequency response of electron-beam-semiconductor Schottky barrier diodes are better than those of pn junctions. The lower gain of the latter devices is attributed to recombination losses in the p+ layer. High current gains (about 1500) were measured for silicon, gallium arsenide, and gallium arsenide phosphide Schottky diodes. Theoretical amplifier designs, based on measured current-gain characteristics, have shown that gallium arsenide phosphide does not provide significant improvements of gain linearity or efficiency over silicon. Gallium arsenide offers substantial increases of bandwidth over silicon and is less susceptible to deterioration resulting from temperature cycling and beam bombardment. Therefore, further development of gallium arsenide electron-beam-semiconductor targets is recommended. (Author).
Book Synopsis Fabrication and Electrical Characterization of PiSi [i.e. PtSi] Schottky Barrier Diode by : Sultan Ul-Alam Chowdhury
Download or read book Fabrication and Electrical Characterization of PiSi [i.e. PtSi] Schottky Barrier Diode written by Sultan Ul-Alam Chowdhury and published by . This book was released on 1993 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Properties of SiC Barrier Diodes Fabricated with Ti Schottky Contacts by : Krishna Chaitanya Kundeti
Download or read book The Properties of SiC Barrier Diodes Fabricated with Ti Schottky Contacts written by Krishna Chaitanya Kundeti and published by . This book was released on 2017 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt: Titanium (Ti) is a popular metal contact used in fabricating Schottky barrier diodes on silicon carbide (SiC) semiconductor. In this research, Ti/4H-SiC Schottky barrier diodes have been fabricated to investigate the effect of deposition temperature and annealing on the electrical characteristics of the fabricated devices. The parameters such as barrier height, ideality factor and on-resistance were determined from the current-voltage (I-V) and the capacitance-voltage (C-V) measurements at room temperature. The temperature-dependent electrical characteristics are realized by performing current-voltage-temperature (I-V-T) measurements. Furthermore, the material characterizations were performed using Auger Electron Spectroscopy (AES) and x-ray diffraction (XRD) measurements. Thin films of Titanium (Ti) as Schottky contacts were deposited on n-type 4H-SiC substrate by magnetron sputtering at different temperatures form room temperature ~25 °C to 900 °C. In addition, thermal processing was performed by annealing at 500 °C in vacuum and argon environment up to 60 hours and characterized using I-V, C-V, and I-V-T measurements accordingly. The diodes with Ti deposited at 200 °C yield better devices with an average ideality factor of 1.04 and Schottky barrier height of 1.13 eV. The electrical properties shows that the deposition of Schottky contact should be at least below 700 °C and the Schottky contact should be annealed at 500 °C for 12-36 hours in order to obtain acceptable quality of Schottky diode. We believe that these variations in the electrical properties are due to the change in the quality of interfacial layer. The variations in physical/compositional properties of Ti/SiC interface has been investigated using Auger electron spectroscopy and x-ray diffraction, which reveled mainly two kinds of phases: Ti5Si3 and Ti3SiC2 formed at the interfacial layer.
Book Synopsis Proceedings of the Symposium on Polymeric Materials for Electronic Packaging and High Technology Applications by : John R. Susko
Download or read book Proceedings of the Symposium on Polymeric Materials for Electronic Packaging and High Technology Applications written by John R. Susko and published by . This book was released on 1988 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characteristics of GaAs Schottky-barrier Diodes for Millimeter-wave Mixers by : Herbert Zirath
Download or read book Characteristics of GaAs Schottky-barrier Diodes for Millimeter-wave Mixers written by Herbert Zirath and published by . This book was released on 1986 with total page 18 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Schottky Barriers written by Saul T. Redd and published by . This book was released on 2020 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: "A Schottky barrier is an electrostatic interface between a metal and a semiconductor that plays a vital role in many electronic devices. Schottky Barriers: An Overview opens with a brief review of the metal-semiconductor Schottky junction, the basic charge transport theory and the issues associated with these barriers. Additionally, the authors provide an overview of recent developments in the field of Schottky contacts to ZnO and related materials, such as ZnMgO, BeZnO, and BeMgZnO. Despite the fundamental importance of Schottky barrier height, the mechanisms which control the barrier formation are still far from understood. As such, for a better understanding of Schottky barriers and barrier height, the authors discuss various empirical models. In closing, AlGaN/GaN Schottky barrier diodes with and without in-situ silicon carbon nitride cap layers are investigated, with the fabricated SBD with a SiCN cap layer exhibiting improved electrical characteristics"--
Book Synopsis Electrical Characterization of Process- and Radiation-induced Defects in 4H-SiC by : Ezekiel Omotoso
Download or read book Electrical Characterization of Process- and Radiation-induced Defects in 4H-SiC written by Ezekiel Omotoso and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Devices for operation in aerospace, manufacturing industries, defence and radiation-harsh environments need to be manufactured from materials that are resistant to the frequent damage caused by irradiation and high-temperature environments. Silicon carbide (SiC) is a wide-bandgap semiconductor material that promises to provide solutions to these problems based on its capability to operate under extreme conditions of temperature and radiation. These conditions introduce defects in the materials. Such defects play an important role in determining the properties of devices, albeit beneficial or detrimental. Therefore it is very important to characterize the defects present in as-grown material as well as defects introduced during processing and irradiation. In this research, resistive evaporation (RE) as well as electron-beam deposition was employed for the fabrication of ohmic and Schottky barrier contacts on nitrogen-doped, n-type 4H-SiC substrate. The quality of the Schottky barrier diodes (SBDs) deposited was confirmed by current-voltage (I-V) and capacitance-voltage (C-V) measurements. Deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS were successfully used to characterize the electrically active defects present in the 4H-SiC SBDs before and after bombarding them with high-energy electrons and alpha-particles as well as after exposing the sample to electron beam deposition conditions. I-V and C-V measurements showed that the SBDs deposited by RE were of good quality with an ideality factor close to unity, a low series resistance and low reverse leakage current. After irradiation, the electrical properties deviated significantly based on the irradiation types and fluences. Thermionic emission dominated at high temperatures close to room temperature, while other current transport mechanisms became dominant at lower temperatures. The ideality factor increased and Schottky barrier heights decreased with decreasing temperature.
Download or read book Physics Briefs written by and published by . This book was released on 1992 with total page 812 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Some Properties of Near-ideal Schottky Barrier Diodes by : Peter Gutknecht
Download or read book Some Properties of Near-ideal Schottky Barrier Diodes written by Peter Gutknecht and published by . This book was released on 1972 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 2304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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