Effect Of Thermal Oxide Film On Scalable Fabrication Of Silicon Nanowire Arrays Using Metal Assisted Chemical Etching

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Effect of Thermal Oxide Film on Scalable Fabrication of Silicon Nanowire Arrays Using Metal Assisted Chemical Etching

Author : Mariana Castaneda
Publisher :
ISBN 13 :
Total Pages : 92 pages
Book Rating : 4.:/5 (126 download)

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Book Synopsis Effect of Thermal Oxide Film on Scalable Fabrication of Silicon Nanowire Arrays Using Metal Assisted Chemical Etching by : Mariana Castaneda

Download or read book Effect of Thermal Oxide Film on Scalable Fabrication of Silicon Nanowire Arrays Using Metal Assisted Chemical Etching written by Mariana Castaneda and published by . This book was released on 2020 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the last several decades, the demand for real-time data processing and storage has exponentially increased and pushed the semiconductor field to its fabrication limits. Traditional methods of semiconductor nanomanufacturing, like lithography and reactive ion etching (RIE), suffer from feature resolution and etch taper limits for devices comprising sub-10 nm nanofabrication nodes. Methods like the ones mentioned above are both expensive and difficult to manufacture to keep up with continued scaling requirements of semiconductor fabrication. This thesis presents a fabrication method and metrology characterization of silicon nanowire arrays using a Metal Assisted Chemical Etching (MACE) approach. MACE is a simple, low-cost fabrication technique that allows for high aspect ratio silicon nanostructures to be successfully fabricated without sacrificing geometry fidelity, making it a promising etching method for large-scale semiconductor manufacturing. In this research, small-scale MACE was demonstrated on silicon coupons with an initial process window of 0 nm - 100 nm oxide thickness. Then, a down-selected process window of 10 nm - 50 nm oxide thickness was successfully reproduced on a full-wafer scale (100 mm diameter silicon wafers) at different etchant solution concentrations. The oxide layer serves as a sacrificial layer between the silicon and resist to allow a consistent etching starting point, thus improving the etch depth uniformity and aspect ratios of silicon nanowires. The silicon nanowires were characterized using local scanning electron microscopy (SEM) images by mapping the areas of the wafer as North, South, East, and West to measure critical dimensions such as height and diameter, as well as to observe phenomena such as nanowire collapse

Micro- and Nano-Fabrication by Metal Assisted Chemical Etching

Author : Lucia Romano
Publisher : MDPI
ISBN 13 : 303943845X
Total Pages : 106 pages
Book Rating : 4.0/5 (394 download)

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Book Synopsis Micro- and Nano-Fabrication by Metal Assisted Chemical Etching by : Lucia Romano

Download or read book Micro- and Nano-Fabrication by Metal Assisted Chemical Etching written by Lucia Romano and published by MDPI. This book was released on 2021-01-13 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal-assisted chemical etching (MacEtch) has recently emerged as a new etching technique capable of fabricating high aspect ratio nano- and microstructures in a few semiconductors substrates—Si, Ge, poly-Si, GaAs, and SiC—and using different catalysts—Ag, Au, Pt, Pd, Cu, Ni, and Rh. Several shapes have been demonstrated with a high anisotropy and feature size in the nanoscale—nanoporous films, nanowires, 3D objects, and trenches, which are useful components of photonic devices, microfluidic devices, bio-medical devices, batteries, Vias, MEMS, X-ray optics, etc. With no limitations of large-areas and low-cost processing, MacEtch can open up new opportunities for several applications where high precision nano- and microfabrication is required. This can make semiconductor manufacturing more accessible to researchers in various fields, and accelerate innovation in electronics, bio-medical engineering, energy, and photonics. Accordingly, this Special Issue seeks to showcase research papers, short communications, and review articles that focus on novel methodological developments in MacEtch, and its use for various applications.

Fabrication and Characterization of Vertical Silicon Nanowire Arrays

Author : Jeffrey M. Weisse
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (858 download)

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Book Synopsis Fabrication and Characterization of Vertical Silicon Nanowire Arrays by : Jeffrey M. Weisse

Download or read book Fabrication and Characterization of Vertical Silicon Nanowire Arrays written by Jeffrey M. Weisse and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Thermoelectric devices, which convert temperature gradients into electricity, have the potential to harness waste heat to improve overall energy efficiency. However, current thermoelectric devices are not cost-effective for most applications due to their low efficiencies and high material costs. To improve the overall conversion efficiency, thermoelectric materials should possess material properties that closely resemble a "phonon glass" and an "electron crystal". The desired low thermal and high electrical conductivities allow the thermoelectric device to maintain a high temperature gradient while effectively transporting current. Unfortunately, thermal transport and electrical transport are a closely coupled phenomena and it is difficult to independently engineer each specific conduction mechanism in conventional materials. One strategy to realize this is to generate nanostructured silicon (e.g. silicon nanowires (SiNWs)), which have been shown to reduce thermal conductivity ([kappa]) through enhanced phonon scattering while theoretically preserving the electronic properties; therefore, improving the overall device efficiency. The ability to suppress phonon propagation in nanostructured silicon, which has a bulk phonon mean free path ~ 300 nm at 300 K, has raised substantial interest as an ultra-low [kappa] material capable of reducing the thermal conductivity up to three orders of magnitude lower than that of bulk silicon. While the formation of porous silicon and SiNWs has individually been demonstrated as promising methods to reduce [kappa], there is a lack of research investigating the thermal conductivity in SiNWs containing porosity. We fabricated SiNW arrays using top-down etching methods (deep reactive ion etching and metal-assisted chemical etching) and by tuning the diameter with different patterning methods and tuning the internal porosity with different SiNW etching conditions. The effects of both the porosity and the SiNW dimensions at the array scale are investigated by measuring [kappa] of vertical SiNW arrays using a nanosecond time-domain thermoreflectance technique. In addition to thermoelectric devices, vertical SiNW arrays, due to their anisotropic electronic and optical properties, large surface to volume ratios, resistance to Li-ion pulverization, ability to orthogonalize light absorption and carrier transport directions, and trap light, make vertical SiNW arrays important building blocks for various applications. These may include sensors, solar cells, and Li-ion batteries. Many of these applications benefit from vertical SiNW arrays fabricated on non-silicon based substrates which endow the final devices with the properties of flexibility, transparency, and light-weight while removing any performance limitation of the silicon fabrication substrate. We then developed two vertical transfer printing methods (V-TPMs) that are used to detach SiNW arrays from their original fabrication substrates and subsequently attach them to any desired substrate while retaining their vertical alignment over a large area. The transfer of vertically aligned arrays of uniform length SiNWs is desirable to remove the electrical, thermal, optical, and structural impact from the fabrication substrate and also to enable the integration of vertical SiNWs directly into flexible and conductive substrates. Moreover, realization of a thermoelectric device requires the formation of electrical contacts on both sides of the SiNW arrays. We formed metallic contacts on both ends of the SiNW arrays with a mechanical supporting and electrical insulating polymer in between. Electrical characterization of the SiNW devices exhibited good current-voltage (I-V) characteristics independent of substrates materials and bending conditions. We believe the V-TPMs developed in this work have great potential for manufacturing practical thermoelectric devices as well as high performing, scalable SiNW array devices on flexible and conducting substrates.

Optical Properties of MacEtch-fabricated Porous Silicon Nanowire Arrays

Author : Kyle G. Tezanos
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (137 download)

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Book Synopsis Optical Properties of MacEtch-fabricated Porous Silicon Nanowire Arrays by : Kyle G. Tezanos

Download or read book Optical Properties of MacEtch-fabricated Porous Silicon Nanowire Arrays written by Kyle G. Tezanos and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: "The increasing demand for complex devices that utilize unique, three-dimensional nanostructures has spurred the development of controllable and versatile semiconductor fabrication techniques. However, there exists a need to refine such methodologies to overcome existing processing constraints that compromise device performance and evolution. Conventional wet etching techniques (e.g., crystallographic KOH etching of Si) successfully generate textured Si structures with smooth sidewalls but lack the capabilities of controllably producing high aspect-ratio structures. Alternatively, dry etching techniques (e.g., reactive-ion etching), while highly controllable and capable of generating vertically aligned, high aspect-ratio structures for IC technologies, introduce considerable sidewall and lattice damage as a result of high-energy ion bombardment that may compromise device performance. Metal-assisted chemical etching (MacEtch) provides an alternative process that is capable of anisotropically generating high aspect-ratio micro and nanostructures using a room temperature, solution-based technique. This fabrication process employs an appropriate metal catalyst (e.g., Au, Ag, Pt, Pd) to induce etching in several semiconducting materials (e.g., Si, GaAs) submerged in a solution containing an oxidant and an etchant. The MacEtch process resembles a galvanic cell such that cathodic and anodic half reactions take place at the catalyst/solution interface and catalyst/substrate interface, respectively. At the cathode, the metal catalyzes the reduction of the oxidant resulting in the generation and accumulation of charge carriers (e.g., holes, h+) that are subsequently injected into the underlying substrate at the anode. This results in the formation of oxide species that are preferentially dissolved by the etchant. Thus, MacEtch provides a tunable, top-down, catalytic fabrication technique enabling greater process control and versatility for generating high aspect-ratio semiconductor structures. In this thesis, Au and Au/Pd catalyzed MacEtch is used to generate ultradeep Si micropillar structures, and porous SiNW (p-SiNW) arrays with enhanced optical properties. Using a combination of Au-MacEtch and a crystallographic KOH etch, Si micropillars with ~100 [micron] height were fabricated with up to 70 [micron] clearance between pillars to allow efficient fluid flow for optical detection of viral particles. Alternatively, porous SiNW arrays fabricated via AuPd- MacEtch demonstrated broadband absorption ≥ 90% from 200 – 900 nm and were shown to outperform RCWA-simulated SiNW arrays with similar morphologies. Additionally, photoluminescence (PL) spectra collected from as prepared p-SiNW showed significant enhancement in intensity centered near 650 nm as etch depth increased from 30 [microns] to 100 [microns], attributed to an increase in the porous volume. Using atomic layer deposition (ALD) the p-SiNW were passivated using alumina (Al2O3) and hafnia (HfO2) thin films in addition to ITO thin films deposited via sputtering. PL intensity also increased after ALD passivation, attributed to a quenching effect on non-radiative SRH recombination sites on the NW surfaces, with a red shift in the peak wavelength as ALD film thickness increased from 10 nm to 50 nm, resulting from strain effects acting on the NW themselves. These results show promise in such micropillar and coated and uncoated p-SiNW structures towards applications in microfluidic devices, and indoor light-harvesting and outdoor solar-based technologies."--Abstract.

Fabrication of High Aspect Ratio Silicon Nanostructure Arrays by Metal-assisted Etching

Author : Shih-wei Chang (Ph.D.)
Publisher :
ISBN 13 :
Total Pages : 182 pages
Book Rating : 4.:/5 (666 download)

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Book Synopsis Fabrication of High Aspect Ratio Silicon Nanostructure Arrays by Metal-assisted Etching by : Shih-wei Chang (Ph.D.)

Download or read book Fabrication of High Aspect Ratio Silicon Nanostructure Arrays by Metal-assisted Etching written by Shih-wei Chang (Ph.D.) and published by . This book was released on 2010 with total page 182 pages. Available in PDF, EPUB and Kindle. Book excerpt: The goal of this research was to explore and understand the mechanisms involved in the fabrication of silicon nanostructures using metal-assisted etching. We developed a method utilizing metal-assisted etching in conjunction with block copolymer lithography to create ordered and densely-packed arrays of high-aspect-ratio single-crystal silicon nanowires with uniform crystallographic orientations. Nanowires with sub-20 nm diameters were created as either continuous carpets or as carpets within trenches. Wires with aspect ratios up to 220 with much reduced capillary-induced clustering were achieved through post-etching critical point drying. The size distribution of the diameters was narrow and closely followed the size distribution of the block copolymer. Fabrication of wires in topographic features demonstrated the ability to accurately control wire placement. The flexibility of this method will facilitate the use of such wire arrays in micro- and nano-systems in which high device densities and/or high surface areas are desired. In addition, we report a systematic study of metal-catalyzed etching of (100), (110), and (111) silicon substrates using gold catalysts with varying geometrical characteristics. It is shown that for isolated catalyst nanoparticles and metal meshes with small hole spacings, etching proceeded preferentially in the 100 direction. However, etching was confined in the direction vertical to the substrate surface when a catalyst mesh with large hole spacings was used. This result was used to demonstrate the use of metal-assisted etching to create arrays of vertically-aligned polycrystalline and amorphous silicon nanowires etched from deposited silicon thin films using catalyst meshes with relatively large hole spacings. The ability to pattern wires from polycrystalline and amorphous silicon thin films opens the possibility of making silicon nanowire-array-based devices on a much wider range of substrates. Finally, we demonstrated the fabrication of a silicon-nanopillar-based nanocapacitor array using metal-assisted etching and electrodeposition. The capacitance density was increased significantly as a result of an increased electrode area made possible by the catalytic etching approach. We also showed that the measured capacitance densities closely follow the expected trend as a function of pillar height and array period. The capacitance densities can be further enhanced by increasing the array density and wire length with the incorporation of known self-assembly-based patterning techniques such as block copolymer lithography.

Silicon and Silicide Nanowires

Author : Yu Huang
Publisher : CRC Press
ISBN 13 : 981430347X
Total Pages : 472 pages
Book Rating : 4.8/5 (143 download)

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Book Synopsis Silicon and Silicide Nanowires by : Yu Huang

Download or read book Silicon and Silicide Nanowires written by Yu Huang and published by CRC Press. This book was released on 2016-04-19 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoscale materials are showing great promise in various electronic, optoelectronic, and energy applications. Silicon (Si) has especially captured great attention as the leading material for microelectronic and nanoscale device applications. Recently, various silicides have garnered special attention for their pivotal role in Si device engineering

Development of Metal-assisted Chemical Etching as a 3D Nanofabrication Platform

Author : Owen James Hildreth
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (865 download)

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Book Synopsis Development of Metal-assisted Chemical Etching as a 3D Nanofabrication Platform by : Owen James Hildreth

Download or read book Development of Metal-assisted Chemical Etching as a 3D Nanofabrication Platform written by Owen James Hildreth and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The considerable interest in nanomaterials and nanotechnology over the last decade is attributed to Industry's desire for lower cost, more sophisticated devices and the opportunity that nanotechnology presents for scientists to explore the fundamental properties of nature at near atomic levels. In pursuit of these goals, researchers around the world have worked to both perfect existing technologies and also develop new nano-fabrication methods; however, no technique exists that is capable of producing complex, 2D and 3D nano-sized features of arbitrary shape, with smooth walls, and at low cost. This in part is due to two important limitations of current nanofabrication methods. First, 3D geometry is difficult if not impossible to fabricate, often requiring multiple lithography steps that are both expensive and do not scale well to industrial level fabrication requirements. Second, as feature sizes shrink into the nano-domain, it becomes increasingly difficult to accurately maintain those features over large depths and heights. The ability to produce these structures affordably and with high precision is critically important to a number of existing and emerging technologies such as metamaterials, nano-fluidics, nano-imprint lithography, and more. Summary To overcome these limitations, this study developed a novel and efficient method to etch complex 2D and 3D geometry in silicon with controllable sub-micron to nano-sized features with aspect ratios in excess of 500:1. This study utilized Metal-assisted Chemical Etching (MaCE) of silicon in conjunction with shape-controlled catalysts to fabricate structures such as 3D cycloids, spirals, sloping channels, and out-of-plane rotational structures. This study focused on taking MaCE from a method to fabricate small pores and silicon nanowires using metal catalyst nanoparticles and discontinuous thin films, to a powerful etching technology that utilizes shaped catalysts to fabricate complex, 3D geometry using a single lithography/etch cycle. The effect of catalyst geometry, etchant composition, and external pinning structures was examined to establish how etching path can be controlled through catalyst shape. The ability to control the rotation angle for out-of-plane rotational structures was established to show a linear dependence on catalyst arm length and an inverse relationship with arm width. A plastic deformation model of these structures established a minimum pressure gradient across the catalyst of 0.4 - 0.6 MPa. To establish the cause of catalyst motion in MaCE, the pressure gradient data was combined with force-displacement curves and results from specialized EBL patterns to show that DVLO encompassed forces are the most likely cause of catalyst motion. Lastly, MaCE fabricated templates were combined with electroless deposition of Pd to demonstrate the bottom-up filling of MaCE with sub-20 nm feature resolution. These structures were also used to establish the relationship between rotation angle of spiraling star-shaped catalysts and their center core diameter. Summary In summary, a new method to fabricate 3D nanostructures by top-down etching and bottom-up filling was established along with control over etching path, rotation angle, and etch depth. Out-of-plane rotational catalysts were designed and a new model for catalyst motion proposed. This research is expected to further the advancement of MaCE as platform for 3D nanofabrication with potential applications in thru-silicon-vias, photonics, nano-imprint lithography, and more.

Nanofabrication

Author : Ampere A. Tseng
Publisher : World Scientific
ISBN 13 : 9812790896
Total Pages : 583 pages
Book Rating : 4.8/5 (127 download)

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Book Synopsis Nanofabrication by : Ampere A. Tseng

Download or read book Nanofabrication written by Ampere A. Tseng and published by World Scientific. This book was released on 2008 with total page 583 pages. Available in PDF, EPUB and Kindle. Book excerpt: Many of the devices and systems used in modern industry are becoming progressively smaller and have reached the nanoscale domain. Nanofabrication aims at building nanoscale structures, which can act as components, devices, or systems, in large quantities at potentially low cost. Nanofabrication is vital to all nanotechnology fields, especially for the realization of nanotechnology that involves the traditional areas across engineering and science. This is the first book solely dedicated to the manufacturing technology in nanoscale structures, devices, and systems and is designed to satisfy the growing demands of researchers, professionals, and graduate students. Both conventional and non-conventional fabrication technologies are introduced with emphasis on multidisciplinary principles, methodologies, and practical applications. While conventional technologies consider the emerging techniques developed for next generation lithography, non-conventional techniques include scanning probe microscopy lithography, self-assembly, and imprint lithography, as well as techniques specifically developed for making carbon tubes and molecular circuits and devices. Sample Chapter(s). Chapter 1: Atom, Molecule, and Nanocluster Manipulations for Nanostructure Fabrication Using Scanning Probe Microscopy (3,320 KB). Contents: Atomic Force Microscope Lithography (N Kawasegi et al.); Nanowire Assembly and Integration (Z Gu & D H Gracias); Extreme Ultraviolet Lithography (H Kinoshita); Electron Projection Lithography (T Miura et al.); Electron Beam Direct Writing (K Yamazaki); Electron Beam Induced Deposition (K Mitsuishi); Focused Ion Beams and Interaction with Solids (T Ishitani et al.); Nanofabrication of Nanoelectromechanical Systems (NEMS): Emerging Techniques (K L Ekinci & J Brugger); and other papers. Readership: Researchers, professionals, and graduate students in the fields of nanoengineering and nanoscience.

Scalable and CMOS-compatible Catalyst Assisted Chemical Etch

Author : Akhila Mallavarapu
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (136 download)

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Book Synopsis Scalable and CMOS-compatible Catalyst Assisted Chemical Etch by : Akhila Mallavarapu

Download or read book Scalable and CMOS-compatible Catalyst Assisted Chemical Etch written by Akhila Mallavarapu and published by . This book was released on 2020 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The ability to reliably and repeatably control the geometry of high aspect ratio silicon nanostructures over large areas is essential for a variety of applications in electronics, energy, point-of-use healthcare and sensing. For about five decades, Moore’s Law consistently delivered computing devices with improved performance, lower power consumption and enhanced functionality, transitioning from 2D scaling to 3D device geometries. However, this transition to 3D has led to unique challenges in deep etching of nanoscale geometries by plasma etch, which limits creation of small and deep features. Metal Assisted Chemical Etching (MACE or MacEtch), an electroless catalyst-based wet etch discovered in 2000, has superior etch anisotropy and sidewall profile and can improve fabrication of high aspect ratio nanostructures. However, MACE literature has not demonstrated wafer-scale etch uniformity, lacks compatibility with CMOS fabrication due to the use of Au as a catalyst, and has limited exploration of complex geometries. Solving these challenges enables a MACE process that can be deployed broadly for a wide variety of CMOS and non-CMOS devices that require precise, high throughput, high yield nanofabrication. This thesis has demonstrated scalable solutions to address MACE challenges, with a focus on adoption in high volume nanomanufacturing. To that end, first, wafer-scale reliable and repeatable fabrication of high aspect ratio silicon nanostructures is presented, based on integrating nanoimprint lithography, metal assisted chemical etching, and spectroscopic scatterometry. Next, a precise experimental technique to study the onset of Si-NW collapse is discussed. This approach resulted in unprecedented ultrahigh aspect ratio Si-NWs for oversized wires separated by sub-50nm gaps. A new nanostructure collapse avoidance methodology was developed using these results. Further, with respect to CMOS-compatibility of the MACE process, a replacement for gold was explored. For the first time, a Ruthenium MACE process that is comparable in quality to Au MACE is reported here. This result is significant because Ruthenium is not only CMOS-compatible but has also already been introduced in the semiconductor fab as an interconnect material. Finally, this research has explored complicated geometries that are specific to CMOS devices such as FinFETs and DRAM cells, and provided MACE-based process flow details to further demonstrate the potential of this technology for next-generation nanodevices. The results in this thesis thus remove a significant barrier to adoption of MACE for scalable fabrication of ultrahigh aspect ratio semiconductor nanostructures, and provide new directions of research for creation of 3D semiconductor nanodevices

Fabrication of Silicon Nanowires with Controlled Nano-scale Shapes Using Wet Anisotropic Etching

Author : Bailey Anderson Yin
Publisher :
ISBN 13 :
Total Pages : 214 pages
Book Rating : 4.:/5 (986 download)

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Book Synopsis Fabrication of Silicon Nanowires with Controlled Nano-scale Shapes Using Wet Anisotropic Etching by : Bailey Anderson Yin

Download or read book Fabrication of Silicon Nanowires with Controlled Nano-scale Shapes Using Wet Anisotropic Etching written by Bailey Anderson Yin and published by . This book was released on 2015 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon nanowires can enable important applications in energy and healthcare such as biochemical sensors, thermoelectric devices, and ultra-capacitors. In the energy sector, for example, as the need for more efficient energy storage continues to grow for enabling applications such as electric vehicles, high energy storage density capacitors are being explored as a potential replacement to traditional batteries that lack fast charge/discharge rates as well as have shorter life cycles. Silicon nanowire based ultra-capacitors offer increased energy storage density by increasing the surface area per unit projected area of the electrode, thereby allowing more surface “charge” to reside. The motivation behind this dissertation is the study of low-cost techniques for fabrication of high aspect ratio silicon nanowires with controlled geometry with an exemplar application in ultra-capacitors. Controlled transfer of high aspect ratio, nano-scale features into functional device layers requires anisotropic etch techniques. Dry reactive ion etch techniques are commonly used since most solution-based wet etch processes lack anisotropic pattern transfer capability. However, in silicon, anisotropic wet etch processes are available for the fabrication of nano-scale features, but have some constraints in the range of geometry of patterns that they can address. While this lack of geometric and material versatility precludes the use of these processes in applications like integrated circuits, they can be potentially realized for fabricating nanoscale pillars. This dissertation explores the geometric limitations of such inexpensive wet anisotropic etching processes and develops additional methods and geometries for fabrication of controlled nano-scale, high aspect ratio features. Jet and Flash Imprint Lithography (J-FILTM) has been used as the preferred pre-etch patterning process as it enables patterning of sub-50 nm high density features with versatile geometries over large areas. Exemplary anisotropic wet etch processes studied include Crystalline Orientation Dependent Etch (CODE) using potassium hydroxide (KOH) etching of silicon and Metal Assisted Chemical Etching (MACE) using gold as a catalyst to etch silicon. Experiments with CODE indicate that the geometric limitations of the etch process prevent the fabrication of high aspect ratio nanowires without adding a prohibitive number of steps to protect the pillar geometry. On the other hand, MACE offers a relatively simple process for fabricating high aspect ratio pillars with unique cross sections, and has thus been pursued to fabricate fully functional electrostatic capacitors featuring both circular and diamond-shaped nano-pillar electrodes. The capacitance of the diamond-shaped nano-pillar capacitor has been shown to be ~77.9% larger than that of the circular cross section due to the increase in surface area per unit projected area. This increase in capacitance approximately matches the increase calculated using analytical models. Thus, this dissertation provides a framework for the ability to create unique sharp cornered nanowires that can be explored further for a wider variety of cross sections.

Integrated Fabrication of Micro- and Nano-scale Structures for Silicon Devices Enabled by Metal-assisted Chemical Etch

Author : Raul Marcel Lema Galindo
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (14 download)

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Book Synopsis Integrated Fabrication of Micro- and Nano-scale Structures for Silicon Devices Enabled by Metal-assisted Chemical Etch by : Raul Marcel Lema Galindo

Download or read book Integrated Fabrication of Micro- and Nano-scale Structures for Silicon Devices Enabled by Metal-assisted Chemical Etch written by Raul Marcel Lema Galindo and published by . This book was released on 2021 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon device manufacturing, at both the micro and nanoscales, is largely performed using plasma etching techniques such as Reactive Ion Etching. Deep Reactive Ion Etching (DRIE) can be used to create high-aspect ratio nanostructures in silicon. The DRIE process suffers from low throughput, only one wafer can be processed at a time; high cost, the necessary tools and facilities for implementation are expensive; and surface defects such as sidewall taper and scalloping as a consequence of the cycling process required for high-aspect-ratio manufacturing. A potential solution to these issues consists of implementing wet-etching techniques, which do not require expensive equipment and can be implemented at a batch scale. Metal Assisted Chemical Etch is a wet-etch process that uses a metal catalyst to mediate silicon oxidation and removal in a diffusion-based process. This process has been demonstrated to work for both micro and nanoscale feature manufacturing on silicon substrates. To date, however, a single study aimed at identifying experimental conditions for successful multi-scale (integrated micro- and nanoscale) manufacturing is lacking in the literature. This mixed micro-nanoscale etching process (IMN-MACE) can enable a wide variety of applications including, for example, development of point-of-care medical diagnostic devices which rely on micro- and nano-fluidic sample processing, a growing field in the area of preventive medicine. This work developed multi-scale MACE by a systematic experimental exploration of the process space. A total of 54 experiments were performed to study the effects of the following process parameters: (i) surface silicon dioxide, (ii) metal catalyst stack, (iii) etchant solution concentration, and (iv) pre-etch sample preparation. Of these 54 experiments, 18 experiments were based on exploring nanopatterning of 100nm pillars, and the remaining 36 explored the fabrication of micropillars with a diameter between 10μm and 50μm in 5μm increments. It was determined that a single catalyst stack consisting of ~3nm Ag underneath a ~15nm Au metal layer can be used to etch high quality features at both the micro and nanoscales on a silicon substrate pre-treated with hydrogen fluoride to remove the native oxide layer from the surface. Future steps for micro-nano scale integration were also proposed

Physics of Semiconductor Devices

Author : V. K. Jain
Publisher : Springer Science & Business Media
ISBN 13 : 3319030027
Total Pages : 841 pages
Book Rating : 4.3/5 (19 download)

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Book Synopsis Physics of Semiconductor Devices by : V. K. Jain

Download or read book Physics of Semiconductor Devices written by V. K. Jain and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 841 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this workshop is to spread the vast amount of information available on semiconductor physics to every possible field throughout the scientific community. As a result, the latest findings, research and discoveries can be quickly disseminated. This workshop provides all participating research groups with an excellent platform for interaction and collaboration with other members of their respective scientific community. This workshop’s technical sessions include various current and significant topics for applications and scientific developments, including • Optoelectronics • VLSI & ULSI Technology • Photovoltaics • MEMS & Sensors • Device Modeling and Simulation • High Frequency/ Power Devices • Nanotechnology and Emerging Areas • Organic Electronics • Displays and Lighting Many eminent scientists from various national and international organizations are actively participating with their latest research works and also equally supporting this mega event by joining the various organizing committees.

Semiconductor Nanowires

Author : J Arbiol
Publisher : Elsevier
ISBN 13 : 1782422633
Total Pages : 573 pages
Book Rating : 4.7/5 (824 download)

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Book Synopsis Semiconductor Nanowires by : J Arbiol

Download or read book Semiconductor Nanowires written by J Arbiol and published by Elsevier. This book was released on 2015-03-31 with total page 573 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor nanowires promise to provide the building blocks for a new generation of nanoscale electronic and optoelectronic devices. Semiconductor Nanowires: Materials, Synthesis, Characterization and Applications covers advanced materials for nanowires, the growth and synthesis of semiconductor nanowires—including methods such as solution growth, MOVPE, MBE, and self-organization. Characterizing the properties of semiconductor nanowires is covered in chapters describing studies using TEM, SPM, and Raman scattering. Applications of semiconductor nanowires are discussed in chapters focusing on solar cells, battery electrodes, sensors, optoelectronics and biology. Explores a selection of advanced materials for semiconductor nanowires Outlines key techniques for the property assessment and characterization of semiconductor nanowires Covers a broad range of applications across a number of fields

The Fabrication of Silicon Nanostructures Using Metal-assisted Chemical Etching and Their Applications in Biomedicine

Author : Hashim Ziad Alhmoud
Publisher :
ISBN 13 :
Total Pages : 225 pages
Book Rating : 4.:/5 (958 download)

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Book Synopsis The Fabrication of Silicon Nanostructures Using Metal-assisted Chemical Etching and Their Applications in Biomedicine by : Hashim Ziad Alhmoud

Download or read book The Fabrication of Silicon Nanostructures Using Metal-assisted Chemical Etching and Their Applications in Biomedicine written by Hashim Ziad Alhmoud and published by . This book was released on 2015 with total page 225 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main aim of this thesis was to develop novel nano-scale silicon structures with useful functions for biomedicine. Metal-assisted chemical etching (MACE) of silicon offered low fabrication cost, ease of implementation, and an inherent compatibility with various patterning technologies. For these reasons, MACE was used as the primary platform of fabrication for this work. Furthermore, nanostructure patterning was mainly carried out via self-assembled nanosphere lithography, which is a low-cost and reliable method for patterning surfaces on the sub-micrometer scale.

Micro- and Nano-Fabrication by Metal Assisted Chemical Etching

Author : Lucia Romano
Publisher :
ISBN 13 : 9783039438464
Total Pages : 106 pages
Book Rating : 4.4/5 (384 download)

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Book Synopsis Micro- and Nano-Fabrication by Metal Assisted Chemical Etching by : Lucia Romano

Download or read book Micro- and Nano-Fabrication by Metal Assisted Chemical Etching written by Lucia Romano and published by . This book was released on 2021 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal-assisted chemical etching (MacEtch) has recently emerged as a new etching technique capable of fabricating high aspect ratio nano- and microstructures in a few semiconductors substrates--Si, Ge, poly-Si, GaAs, and SiC--and using different catalysts--Ag, Au, Pt, Pd, Cu, Ni, and Rh. Several shapes have been demonstrated with a high anisotropy and feature size in the nanoscale--nanoporous films, nanowires, 3D objects, and trenches, which are useful components of photonic devices, microfluidic devices, bio-medical devices, batteries, Vias, MEMS, X-ray optics, etc. With no limitations of large-areas and low-cost processing, MacEtch can open up new opportunities for several applications where high precision nano- and microfabrication is required. This can make semiconductor manufacturing more accessible to researchers in various fields, and accelerate innovation in electronics, bio-medical engineering, energy, and photonics. Accordingly, this Special Issue seeks to showcase research papers, short communications, and review articles that focus on novel methodological developments in MacEtch, and its use for various applications.

Chemical Abstracts

Author :
Publisher :
ISBN 13 :
Total Pages : 2626 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Chemical Abstracts by :

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2626 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Resolution Limits of Metal Assisted Chemical Etching of Polysilicon

Author : Crystal Barrera
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (134 download)

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Book Synopsis Resolution Limits of Metal Assisted Chemical Etching of Polysilicon by : Crystal Barrera

Download or read book Resolution Limits of Metal Assisted Chemical Etching of Polysilicon written by Crystal Barrera and published by . This book was released on 2021 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Patterning and etching high aspect ratio, sub-50 nanometer structures for 3D device architectures is becoming a critical challenge in advanced semiconductor device fabrication. Metal assisted chemical etching (MACE) is a wet etch process that has demonstrated very high aspect ratio structures in single crystal silicon at sub-50 nanometer scale. The capabilities of this process can be applied to etching of gate structures made in bulk or epitaxially grown single crystal silicon, however, it is important to extend MACE to other materials for a range of semiconductor device architectures. In this research, we build on preliminary results published in the literature showing MACE for polycrystalline silicon. If it can be demonstrated that MACE of polysilicon can retain the sub-50 nanometer resolution and high aspect ratio produced with MACE of single crystal silicon, process techniques can be developed around polysilicon MACE to fabricate critical structures needed in advanced Dynamic RAM, 3D Flash and vias for logic devices. It is also important to demonstrate that atomically precise side walls that are near-perfect in maintaining 90-degree wall angle, as demonstrated with MACE applied to single crystal silicon, can also be achieved in polycrystalline silicon. Metal assisted chemical etching (MACE) is a promising approach that addresses many issues that arise from underperforming reactive ion etching (RIE) methods that have limitations in fabricating high aspect ratio sub-50 nanometer nanostructures due to presence of tapered profiles and high side wall roughness. However, MACE is extremely limited in the types of materials for which it has been demonstrated. MACE has shown reliable etching only in single crystal silicon which limits its applications to a small number of front-end semiconductor device layers. This work extends the capabilities of MACE to polysilicon which when combined with additional process steps has the potential to create patterns for metal vias and deep trench capacitors, both of which are important in the semiconductor industry. Much of the existing literature on MACE for polysilicon builds an underlying hypothesis; etch quality of polysilicon is compromised by the inherent crystalline structure of the material. There is an especial lack in understanding how MACE works at crystal grain boundaries, which presents risk in reduced atomic precision due to sidewall roughness induced by these boundaries –limiting the value of MACE for sub-50 nanometer structures. In this work, we present a MACE wet etch of polysilicon that produces structure arrays with sub-50nm resolution and anisotropic profile. The three demonstrated structures are pillars of 6:1 aspect ratio and 50nm spacing for comparison to MACE literature, pillars of 30nm spacing to establish resolution limitations of polysilicon etch, and a diamond pillar array with potential to fabricate holes with as low as 15nm spacing