Book Synopsis ECR Plasma-assisted Deposition of Al[sub 2]O[sub 3] and Dispersion-strengthened AlO[sub 2]. by :
Download or read book ECR Plasma-assisted Deposition of Al[sub 2]O[sub 3] and Dispersion-strengthened AlO[sub 2]. written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Electron cyclotron resonance (ECR) O[sub 2] plasmas, in conjunction with electron-beam evaporation of Al, were used to grow thick AlO[sub x] films were varying but controlled composition and microstructure. The ion energy was varied from 30 to 190 eV, and growth temperatures varied from 35[degrees]C to 400[degrees]C. The ECR-film compositions were varied from AlO[sub 0.1] to Al[sub 2]O[sub 3] by controlling the plasma parameters and Al deposition rate. The Al-rich alloys exhibited a fine-grain (10-100 nm) fcc Al microstructure with [gamma]-Al[sub 2]O[sub 3] precipitates ([approximately]1 nm), similar to that found in the gigapascal-strength O-implanted Al. The measured hardness of the ECR Al-O alloys ([approximately]3 GPa) was also similar to the ion-implanted alloys which implies that the yield strength of the ECR material is [approximately]1 GPa. Moreover, the Al-O alloys retain much of the elasticity of the Al metal matrix. As-deposited stoichiometric Al[sub 2]O[sub 3] samples grown with an applied bias of -140 to -160 V at 400[degrees]C were fine-grain polycrystalline [gamma]-Al[sub 2]O[sub 3]. The amorphous films crystallized into the [gamma]-Al[sub 2]O[sub 3] phase upon vacuum annealing to 800[degrees]C.