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Author : William John Edwards
Publisher :
ISBN 13 :
Total Pages : 328 pages
Book Rating : 4.E/5 ( download)
Download or read book Dopant Implantation and Oxidation of Polycrystalline Silicon-germanium Films written by William John Edwards and published by . This book was released on 1996 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Raminderpal Singh
Publisher : John Wiley & Sons
ISBN 13 : 0471660914
Total Pages : 368 pages
Book Rating : 4.4/5 (716 download)
Download or read book Silicon Germanium written by Raminderpal Singh and published by John Wiley & Sons. This book was released on 2004-03-15 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: "An excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications." -Ron Wilson, EETimes "SiGe technology has demonstrated the ability to provide excellent high-performance characteristics with very low noise, at high power gain, and with excellent linearity. This book is a comprehensive review of the technology and of the design methods that go with it." -Alberto Sangiovanni-Vincentelli Professor, University of California, Berkeley Cofounder, Chief Technology Officer, Member of Board Cadence Design Systems Inc. Filled with in-depth insights and expert advice, Silicon Germanium covers all the key aspects of this technology and its applications. Beginning with a brief introduction to and historical perspective of IBM's SiGe technology, this comprehensive guide quickly moves on to: * Detail many of IBM's SiGe technology development programs * Explore IBM's approach to device modeling and characterization-including predictive TCAD modeling * Discuss IBM's design automation and signal integrity knowledge and implementation methodologies * Illustrate design applications in a variety of IBM's SiGe technologies * Highlight details of highly integrated SiGe BiCMOS system-on-chip (SOC) design Written for RF/analog and mixed-signal designers, CAD designers, semiconductor students, and foundry process engineers worldwide, Silicon Germanium provides detailed insight into the modeling and design automation requirements for leading-edge RF/analog and mixed-signal products, and illustrates in-depth applications that can be implemented using IBM's advanced SiGe process technologies and design kits. "This volume provides an excellent introduction to the SiGe BiCMOS technology, from the underlying device physics to current applications. But just as important is the window the text provides into the infrastructure-the process development, device modeling, and tool development." -Ron Wilson Silicon Engineering Editor, EETimes "This book chronicles the development of SiGe in detail, provides an in-depth look at the modeling and design automation requirements for making advanced applications using SiGe possible, and illustrates such applications as implemented using IBM's process technologies and design methods." -John Kelly Senior Vice President and Group Executive, Technology Group, IBM
Author : Yuen-Shung Chieh
Publisher : Ann Arbor, Mich. : University Microfilms International
ISBN 13 :
Total Pages : 646 pages
Book Rating : 4.E/5 ( download)
Download or read book Design, Fabrication and Characterization of 100 Nm CMOS Devices written by Yuen-Shung Chieh and published by Ann Arbor, Mich. : University Microfilms International. This book was released on 1996 with total page 646 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : United States. Patent and Trademark Office
Publisher :
ISBN 13 :
Total Pages : 1530 pages
Book Rating : 4.0/5 ( download)
Download or read book Official Gazette of the United States Patent and Trademark Office written by United States. Patent and Trademark Office and published by . This book was released on 2002 with total page 1530 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Alexei Nazarov
Publisher : Springer Science & Business Media
ISBN 13 : 3642158684
Total Pages : 437 pages
Book Rating : 4.6/5 (421 download)
Download or read book Semiconductor-On-Insulator Materials for Nanoelectronics Applications written by Alexei Nazarov and published by Springer Science & Business Media. This book was released on 2011-03-03 with total page 437 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Semiconductor-On-Insulator Materials for NanoElectronics Applications” is devoted to the fast evolving field of modern nanoelectronics, and more particularly to the physics and technology of nanoelectronic devices built on semiconductor-on-insulator (SemOI) systems. The book contains the achievements in this field from leading companies and universities in Europe, USA, Brazil and Russia. It is articulated around four main topics: 1. New semiconductor-on-insulator materials; 2. Physics of modern SemOI devices; 3. Advanced characterization of SemOI devices; 4. Sensors and MEMS on SOI. "Semiconductor-On-Insulator Materials for NanoElectonics Applications” is useful not only to specialists in nano- and microelectronics but also to students and to the wider audience of readers who are interested in new directions in modern electronics and optoelectronics.
Author :
Publisher :
ISBN 13 :
Total Pages : 1140 pages
Book Rating : 4.F/5 ( download)
Download or read book Japanese Journal of Applied Physics written by and published by . This book was released on 2007 with total page 1140 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 1056 pages
Book Rating : 4.X/5 (4 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1972 with total page 1056 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : David Louis Harame
Publisher : The Electrochemical Society
ISBN 13 : 1566775078
Total Pages : 1280 pages
Book Rating : 4.5/5 (667 download)
Download or read book SiGe and Ge written by David Louis Harame and published by The Electrochemical Society. This book was released on 2006 with total page 1280 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.
Author : Paul J. Timans
Publisher : The Electrochemical Society
ISBN 13 : 9781566773348
Total Pages : 500 pages
Book Rating : 4.7/5 (733 download)
Download or read book Rapid Thermal and Other Short-time Processing Technologies III written by Paul J. Timans and published by The Electrochemical Society. This book was released on 2002 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Eberhard F. Krimmel
Publisher : Springer Science & Business Media
ISBN 13 : 3662099012
Total Pages : 417 pages
Book Rating : 4.6/5 (62 download)
Download or read book Si Silicon written by Eberhard F. Krimmel and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first of three Gmelin Handbook volumes in the silicon se ries that will cover silicon nitride, a normaUy solid material with the idealized formula Si N . This volume, 3 4 "Silicon" Supplement Volume B Sc, is devoted to applications of silicon nitride in microelec tronics and solar ceUs. The compendium is the product of a critical selection among more than 17600 publications on silicon nitride issued up to January 1990. Out of a total of 5900 publications dealing with the fabrication and use of microelectronic devices (including 2400 Japanese patent applications), about 4000 papers have been selected for this volume. The current volume is grouped into three parts. Chapters 2 to 8 deal with general, non specific microelectronic applications of silicon nitride, Chapters 9 to 31 cover applications of silicon nitride in specific devices and device components, and Chapter 32 is devoted exclusively to applications in solar ceUs, including information on our general understanding of the role of silicon nitride in photovoltaic devices. Experimental results on the preparation of silicon nitride layers for application in unspeci fied devices are in Chapter 2. Whenever the preparation is in connection with specific devices, the information is presented in the respective chapters. The general preparation of silicon nitride layers is not covered in this volume, but will appear in "Silicon" Supplement Volume B 5a. See also the Introductory Remarks, Chapter 1, p. 1.
Author : Hoi S. Kwok
Publisher :
ISBN 13 : 9789628273010
Total Pages : 280 pages
Book Rating : 4.2/5 (73 download)
Download or read book Proceedings of the Fourth Asian Symposium on Information Display written by Hoi S. Kwok and published by . This book was released on 1997 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : F. Roozeboom
Publisher : The Electrochemical Society
ISBN 13 : 1566778638
Total Pages : 377 pages
Book Rating : 4.5/5 (667 download)
Download or read book Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications written by F. Roozeboom and published by The Electrochemical Society. This book was released on 2011-04-25 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions covers emerging materials, process and technology options for large-area silicon wafers to enhance advanced IC performance or to enable revolutionary device structures with entirely new functionalities. Topics : high-mobility channel materials, (e.g. strained Si/Ge, compound semiconductors and graphene), high-performance gate stacks and low-resistivity junctions and contacts on new, Si-compatible materials; new materials and processes for 3-D (TSV) integration ; synthesis of nano-structures including wires, pores and membranes of Si-compatible materials; novel MEMS/NEMS structures and their integration with the mainstream Si-IC technology.
Author : E. Kasper
Publisher : CRC Press
ISBN 13 : 1351085077
Total Pages : 306 pages
Book Rating : 4.3/5 (51 download)
Download or read book Silicon Molecular Beam Epitaxy written by E. Kasper and published by CRC Press. This book was released on 2018-05-04 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Author :
Publisher :
ISBN 13 :
Total Pages : 564 pages
Book Rating : 4.:/5 (3 download)
Download or read book Energy Research Abstracts written by and published by . This book was released on 1990 with total page 564 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Donald T. Hawkins
Publisher : Springer Science & Business Media
ISBN 13 : 1468413872
Total Pages : 305 pages
Book Rating : 4.4/5 (684 download)
Download or read book Auger Electron Spectroscopy written by Donald T. Hawkins and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 305 pages. Available in PDF, EPUB and Kindle. Book excerpt: Auger electron spectroscopy is rapidly developing into the single most powerful analytical technique in basic and applied science.for investigating the chemical and structural properties of solids. Its ex plosive growth beginning in 1967 was triggered by the development of Auger analyzers capable of de tecting one atom layer of material in a fraction of a second. Continued growth was guaranteed firstly by the commercial availability of apparatus which combined the capabilities of scanning electron mi croscopy and ion-mill depth profiling with Auger analysis, and secondly by the increasing need to know the atomistics of many processes in fundamental research and engineering applications. The expanding use of Auger analysis was accompanied by an increase in the number of publications dealing with it. Because of the developing nature of Auger spectroscopy, the articles have appeared in many different sources covering diverse disciplines, so that it is extremely difficult to discover just what has or has not been subjected to Auger analysis. In this situation, a comprehensive bibliography is obviou-sly useful to those both inside and outside the field. For those in the field, this bibliography should be a wonderful time saver for locating certain references, in researching a particular topic, or when considering various aspects of instrumentation or data analysis. This bibliography not only provides the most complete listing of references pertinent to surface Auger analysis available today, but it is also a basis for extrapolating from past trends to future expectations.
Author : Xiaoge Gregory Zhang
Publisher : Springer Science & Business Media
ISBN 13 : 0306479214
Total Pages : 525 pages
Book Rating : 4.3/5 (64 download)
Download or read book Electrochemistry of Silicon and Its Oxide written by Xiaoge Gregory Zhang and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 525 pages. Available in PDF, EPUB and Kindle. Book excerpt: It may be argued that silicon, carbon, hydrogen, oxygen, and iron are among the most important elements on our planet, because of their involvement in geological, biol- ical, and technological processes and phenomena. All of these elements have been studied exhaustively, and voluminous material is available on their properties. Included in this material are numerous accounts of their electrochemical properties, ranging from reviews to extensive monographs to encyclopedic discourses. This is certainly true for C, H, O, and Fe, but it is true to a much lesser extent for Si, except for the specific topic of semiconductor electrochemistry. Indeed, given the importance of the elect- chemical processing of silicon and the use of silicon in electrochemical devices (e. g. , sensors and photoelectrochemical cells), the lack of a comprehensive account of the electrochemistry of silicon in aqueous solution at the fundamental level is surprising and somewhat troubling. It is troubling in the sense that the non-photoelectrochemistry of silicon seems “to have fallen through the cracks,” with the result that some of the electrochemical properties of this element are not as well known as might be warranted by its importance in a modern technological society. Dr. Zhang’s book, Electrochemical Properties of Silicon and Its Oxide, will go a long way toward addressing this shortcoming. As with his earlier book on the elect- chemistry of zinc, the present book provides a comprehensive account of the elect- chemistry of silicon in aqueous solution.
Author : C.A.J. Ammerlaan
Publisher : Elsevier
ISBN 13 : 0080983642
Total Pages : 518 pages
Book Rating : 4.0/5 (89 download)
Download or read book Science and Technology of Defects in Silicon written by C.A.J. Ammerlaan and published by Elsevier. This book was released on 2014-01-01 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities.In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.
